JPH01122129A - Pad for connecting wiring - Google Patents

Pad for connecting wiring

Info

Publication number
JPH01122129A
JPH01122129A JP62280181A JP28018187A JPH01122129A JP H01122129 A JPH01122129 A JP H01122129A JP 62280181 A JP62280181 A JP 62280181A JP 28018187 A JP28018187 A JP 28018187A JP H01122129 A JPH01122129 A JP H01122129A
Authority
JP
Japan
Prior art keywords
wire
flat plate
pad
plate member
pressed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62280181A
Other languages
Japanese (ja)
Inventor
Naoto Okazaki
尚登 岡崎
Mitsuaki Fujihira
藤平 充明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62280181A priority Critical patent/JPH01122129A/en
Publication of JPH01122129A publication Critical patent/JPH01122129A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166Titanium [Ti] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05551Shape comprising apertures or cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
    • H01L2224/05557Shape in side view comprising protrusions or indentations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669Platinum [Pt] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4807Shape of bonding interfaces, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48455Details of wedge bonds
    • H01L2224/48456Shape
    • H01L2224/48458Shape of the interface with the bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78302Shape
    • H01L2224/78305Shape of other portions
    • H01L2224/78307Shape of other portions outside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78317Shape of other portions
    • H01L2224/78318Shape of other portions inside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • H01L2224/85207Thermosonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3512Cracking

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the flat plate member, such as a chip or a substrate or the like from cracking by providing a notch or a hole longitudinally of a wire to be pressed. CONSTITUTION:A pad 5 is formed of a flat plate having a 3-layer structure in which platinum, gold are, for example, deposited on titanium, and cutouts D, D are formed longitudinally of a wiring. The cutouts D, D are so provided as to include points C, C obtained by projecting the contact points of at least wiring 3 with the pressed part of a bonding tool 4 on a flat plate member 1 from a pressing direction. The cutouts D, D are so formed to remove sections corresponding to points B, B to be considered that a maximum stress acts from the pad that a frictional force generated when the wiring 3 is pressed and extended does not act directly on the member 1, such as a chip or a substrate or the like. Thus, it can prevent the flat plate member, such as the chip or the substrate from cracking.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体チップなどの平板上のパッドにワイ
ヤをボンディング工具で押圧し、このワイヤをパッド上
に固着するワイヤボンディングに用いられるパッドに関
する。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a pad used in wire bonding, in which a wire is pressed onto a pad on a flat plate such as a semiconductor chip using a bonding tool, and the wire is fixed onto the pad. .

〔従来技術及びその問題点〕[Prior art and its problems]

チップの電極とパッケージの電極をワイヤで接続するワ
イヤボンディング法として、−膜内に熱圧着法または熱
圧接法等があるが、たとえば第4図で示されるようにな
される。これは、チップまたは半導体基板等の平板部材
1にワイヤ引き出し用の長方形あるいは正方形パッド2
,2.・・・を固定し、AlあるいはAuのワイヤ3を
ボンディング工具4でパッド2上に押圧するものである
。この場合、ワイヤ3はボンディング工具4と2点A。
Wire bonding methods for connecting the electrodes of a chip and the electrodes of a package with wires include an intra-film thermocompression bonding method and a thermocompression bonding method, for example, as shown in FIG. 4. This is a rectangular or square pad 2 for drawing out wires on a flat plate member 1 such as a chip or a semiconductor substrate.
,2. . . are fixed, and a wire 3 of Al or Au is pressed onto the pad 2 with a bonding tool 4. In this case, the wire 3 is connected to the bonding tool 4 at two points A.

Aで接触する(第5図(a))。ボンディング工具4が
下降すると、平板部材1上のパッド2にワイヤ3が押圧
され、ワイヤ3が矢印方向に延びるので(第5図(b)
) 、ワイヤ3とパッド2との間に摩擦力が作用する。
Contact is made at A (Fig. 5(a)). When the bonding tool 4 descends, the wire 3 is pressed against the pad 2 on the flat plate member 1, and the wire 3 extends in the direction of the arrow (Fig. 5(b)).
), a frictional force acts between the wire 3 and the pad 2.

そのため、パッド2には内部応力がB点に働き、平板部
材1の0点に亀裂(第5図(c)参照)が牢じ歩留まり
が低下するという欠点があった。特に、GaAs基板は
、物性的な性質から亀裂が生じ易くなる。
Therefore, internal stress acts on the pad 2 at point B, and a crack (see FIG. 5(c)) occurs at the zero point of the flat plate member 1, resulting in a decrease in yield. In particular, GaAs substrates tend to crack easily due to their physical properties.

そこでこの発明は、ボンディング時にチップまたは基板
等の平板部材1に亀裂等が生じないようにすることを目
的とする。
Therefore, an object of the present invention is to prevent cracks from occurring in the flat plate member 1 such as a chip or a substrate during bonding.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決するためこの発明は、平板上のパッド
にワイヤをボンディング工具で押圧し、上記ワイヤをパ
ッド上に固着するワイヤボンディング法に用いられるパ
ッドにおいて、押圧される上記ワイヤの長手方向に切り
欠き部または穴部を有することを特徴とiる。
In order to solve the above problems, the present invention provides a pad used in a wire bonding method in which a wire is pressed onto a pad on a flat plate using a bonding tool, and the wire is fixed onto the pad. It is characterized by having a notch or a hole.

〔作用〕[Effect]

この発明は以上のように構成されているので、押圧され
る上記ワイヤの長手方向に形設された切り欠き部または
穴部の作用により、パッド内部に生ずる応力を極力軽減
することできる。
Since the present invention is constructed as described above, the stress generated inside the pad can be reduced as much as possible by the action of the notch or hole formed in the longitudinal direction of the wire being pressed.

〔実施例〕〔Example〕

以下、この発明に係るワイヤ接続用パッドの一実施例を
添付図面に基づき説明する。なお説明において、同一要
素には同一符号を用い、重複する説明は省略する。
An embodiment of the wire connection pad according to the present invention will be described below with reference to the accompanying drawings. In the description, the same elements are denoted by the same reference numerals, and redundant description will be omitted.

最初に、第1図および第2図に基づき、この一実施例を
説明する。第1図は、この実施例を示すもので、同図(
a)はワイヤボンディング前、同図(b)はワイヤボン
ディング後の状態を示す斜視図である。パッド5は、た
とえばチタン上にプラチナ、金を蒸着した三層構造の平
板で構成されており、ワイヤの長手方向(同図(a)参
照)に切り欠き部り、Dが形成されている。この切り欠
き部り、Dは、少なくともワイヤ3とボンディング工具
4の押圧部との接触点を押圧力向から平板部材1上に投
影した点C1Cを含むように設けられている。なお、こ
の切り欠き部り、Dは上記投影点C1Cを含むように形
設された穴であってもよい。重要なことは、ワイヤ3が
押圧されて延びるときに生ずる摩擦力が直接チップや基
板等の平板部材1に作用しないように、最大応力が働く
と考えられる点B、Hに相当する部分をパッドから排除
している点である。前述した点A、B、Cは、いずれも
同一直線上にあり、排除する手段は切り欠き部を設けて
も、穴を設けてもよい。なお、上記切り欠き部あるいは
穴部は、ホトエツチング工程で取り除くが、最初に正方
形あるいは長方形の平板を形成し、後にレーザビームな
どで加工して取り除いてもよい。
First, this embodiment will be explained based on FIGS. 1 and 2. Figure 1 shows this embodiment.
FIG. 3A is a perspective view showing the state before wire bonding, and FIG. 2B is a perspective view showing the state after wire bonding. The pad 5 is constituted by a flat plate having a three-layer structure in which platinum and gold are vapor-deposited on titanium, for example, and has a notch D formed in the longitudinal direction of the wire (see FIG. 4A). This notch D is provided so as to include at least a point C1C, which is the contact point between the wire 3 and the pressing portion of the bonding tool 4 projected onto the flat plate member 1 from the pressing force direction. Note that this notch D may be a hole formed so as to include the projection point C1C. What is important is that the areas corresponding to points B and H where the maximum stress is thought to be applied are padded so that the frictional force that occurs when the wire 3 is pushed and stretched does not directly act on the flat plate member 1 such as the chip or substrate. This is a point that is excluded from the list. The points A, B, and C described above are all on the same straight line, and the means for removing them may be provided with a cutout or a hole. Note that the cutout or hole is removed by a photoetching process, but it may also be removed by first forming a square or rectangular flat plate and then processing it with a laser beam or the like.

第2図は、この実施例の作用を示す工程図である。ボン
ディング工具4は、円錐形で構成されており、ワイヤ3
は、ボンディング工具4に並設されたワイヤ供給用穴4
aから供給されている。このボンディング工具4は、平
板部材1とほぼ直交する方向に移動可能で、少なくとも
ワイヤ3を押圧することによりワイヤ3を変形あるいは
切断できるように構成されている。第2図(a)で示さ
れるように、押圧する時ボンディング工具4の先端部は
ワイヤ3と2点A、Aで接触する。なお、この実施例に
おけるボンディング工具としてウェッジ・タイプを使用
しているが、キャピラリ・タイプであってもよい。
FIG. 2 is a process diagram showing the operation of this embodiment. The bonding tool 4 has a conical shape, and the wire 3
is a wire supply hole 4 arranged in parallel with the bonding tool 4.
It is supplied from a. This bonding tool 4 is movable in a direction substantially perpendicular to the flat plate member 1, and is configured to deform or cut the wire 3 by at least pressing the wire 3. As shown in FIG. 2(a), when pressing, the tip of the bonding tool 4 contacts the wire 3 at two points A, A. Although a wedge type bonding tool is used in this embodiment, a capillary type bonding tool may also be used.

ボンディング工具4が下降することによって、ワイヤ3
が平板部材1上に固定されたパッド5に押圧され、ワイ
ヤ3は同図(b)で示すように変形する。この場合、最
大応力はボンディング工具4とワイヤ3との接触点A、
Aを押圧方向で平板部材1に投影するとき貫通する点B
、Bに働くと考えられるので、当該点B、Bを切り欠い
て構成されたこの実施例では、ワイヤ3がパッド5上を
押圧されながら変形することにより生ずる摩擦力の影響
が著しく軽減される。従って、平板部材1にはワイヤ3
が延びる方向に摩擦力はほとんど作用せず、亀裂の発生
による歩留まりの低下を防止することができる。
By lowering the bonding tool 4, the wire 3
is pressed by the pad 5 fixed on the flat plate member 1, and the wire 3 is deformed as shown in FIG. In this case, the maximum stress is at the contact point A between the bonding tool 4 and the wire 3,
Point B that penetrates when A is projected onto the flat plate member 1 in the pressing direction
, B. Therefore, in this embodiment configured by cutting out the points B and B, the influence of the frictional force generated when the wire 3 is deformed while being pressed on the pad 5 is significantly reduced. . Therefore, the wire 3 is attached to the flat plate member 1.
Almost no frictional force acts in the direction in which the material extends, making it possible to prevent a decrease in yield due to the occurrence of cracks.

次に、第3図に基づきこの発明に係るワイヤ接続用パッ
ドの変形例を説明する。いずれも、切り欠き部または穴
部はワイヤの長手方向、すなわちワイヤが延びる方向に
形設されている。
Next, a modified example of the wire connection pad according to the present invention will be explained based on FIG. In either case, the cutout or hole is formed in the longitudinal direction of the wire, that is, in the direction in which the wire extends.

同図(a)乃至(c)は、パッドに切り欠き部を設けた
一例を示すものである。同図(a)は、切り欠き部が三
角形D  、D  の場合を示すものである。接着面積
が大きくとれるので、平板部材との固定力を大きくする
ことができる。同図(b)は、切り欠き部を長方形D 
 、D  にしたものである。中央部の応力荷重の均一
化が図れるので、強度的に安定する。また、ワイヤを抑
圧できる範囲が大きいので、ワイヤボンディングが容易
になる。第3図(c)は、切り欠き部が台形D3゜D3
の場合を示すものである。中央部の応力荷重の均一化が
図れると共に、平板部材との接触面積が増加するので、
平板部材との固定力を増すことができる。
Figures (a) to (c) show an example in which a pad is provided with a notch. Figure (a) shows a case where the notches are triangles D 1 and D 2 . Since the adhesive area can be increased, the fixing force to the flat plate member can be increased. In the same figure (b), the notch is rectangular D.
, D. Since the stress load at the center can be made uniform, the strength is stable. Furthermore, since the range in which the wire can be suppressed is large, wire bonding becomes easier. In Fig. 3(c), the notch is trapezoidal D3°D3.
This shows the case of The stress load at the center can be made uniform, and the contact area with the flat plate member can be increased.
The fixing force with the flat plate member can be increased.

同図(d)乃至(f)は、パッドに穴部を設けた一例を
示すものである。同図(d)は、ワイヤが押圧される中
央部の両側に長方形の穴D 4 。
Figures (d) to (f) show an example in which a hole is provided in the pad. In the same figure (d), there are rectangular holes D 4 on both sides of the central part where the wire is pressed.

D4を設けたものである。ワイヤを押圧できる範囲が大
きいので、ワイヤボンディングが容易になり、接触面積
が増加するので、平板部材との固定力を増すことができ
る。同図(e)は、楕円形の穴D  、Dsを設けたも
のである。平板部材との接触面積が増加するので、平板
部材との固定力を増すことができる。同図(f)は、複
数の円形の穴D  、D  、D  、・・・を例えば
十の字状に設け6 6  B たちのである。ワイヤを少なくとも2方向に載置させて
押圧できるので、ワイヤボンディングの設定が簡単にな
る。
D4 is provided. Since the range in which the wire can be pressed is large, wire bonding becomes easy, and the contact area increases, so that the fixing force with the flat plate member can be increased. In the same figure (e), oval holes D and Ds are provided. Since the contact area with the flat plate member increases, the fixing force with the flat plate member can be increased. In the same figure (f), a plurality of circular holes D 1 , D 2 , D 2 , . Since the wire can be placed and pressed in at least two directions, wire bonding can be easily set up.

なお、この発明が適用されるワイヤボンディング法は、
当該実施例のものに限定されるものではない。例えば、
超音波ボンディング法、サーモソニックボンディング法
等にも適用できる。
The wire bonding method to which this invention is applied is as follows:
It is not limited to what is shown in this example. for example,
It can also be applied to ultrasonic bonding methods, thermosonic bonding methods, etc.

〔発明の効果〕〔Effect of the invention〕

この発明は、以上説明したように構成されているので、
チップまたは基板等の平板部材に亀裂等が生じないよう
にすることができる。
Since this invention is configured as explained above,
It is possible to prevent cracks from occurring in a flat plate member such as a chip or a substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明に係るワイヤ接続用パッドの一実施
例を示す斜視図、第2図は、その作用を説明するための
工程図、第3図は、その変形例を示す図、第4図は、ワ
イヤの接続方法を説明するための斜視図、第5図は、従
来技術を説明するための工程図である。 1・・・平板部材    2・・・従来のパッド3・・
・ワイヤ     4・・・ボンディング工具ら・・・
パッド 特許出願人  住友電気工業株式会社 代理人弁理士   長谷用  芳  樹間      
   山    1)   仔   −作  用 第2図 ポンディング前 (a) ボンディング後 (b) 一拉艙1$1  、J−、L# ン1− (a)           (b) (e)           (f) に 1′y:釈r口/m−ノ r 第1図 (c)      (d)
FIG. 1 is a perspective view showing one embodiment of the wire connection pad according to the present invention, FIG. 2 is a process diagram for explaining its operation, and FIG. 3 is a diagram showing a modification thereof. FIG. 4 is a perspective view for explaining the wire connection method, and FIG. 5 is a process diagram for explaining the conventional technique. 1... Flat plate member 2... Conventional pad 3...
・Wire 4...Bonding tools etc...
Pad patent applicant: Sumitomo Electric Industries, Ltd. Patent attorney Yoshiki Hase
Mountain 1) Child - Action Figure 2 Before bonding (a) After bonding (b) One boat 1$1, J-, L# N1- (a) (b) (e) (f) to 1 ′y:Shaku rguchi/m-ノr Figure 1 (c) (d)

Claims (1)

【特許請求の範囲】 1、平板上のパッドにワイヤをボンディング工具で押圧
し、前記ワイヤを前記パッド上に固着するワイヤボンデ
ィング法に用いられるパッドにおいて、 押圧される前記ワイヤの長手方向に切り欠き部または穴
部を有することを特徴とするワイヤ接続用パッド。 2、前記切り欠き部または穴部が、少なくとも前記ワイ
ヤと前記ボンディング工具の押圧部との接触点を前記押
圧方向から前記平板上に投影した点を含むように設けら
れた特許請求の範囲第1項記載のワイヤ接続用パッド 3、前記切り欠き部または穴部が、曲線で形成されてい
るところの特許請求の範囲第2項記載のワイヤ接続用パ
ッド。 4、前記切り欠き部または穴部が、多角形で形成されて
いるところの特許請求の範囲第2項記載のワイヤ接続用
パッド。
[Claims] 1. In a pad used in a wire bonding method in which a wire is pressed against a pad on a flat plate with a bonding tool and the wire is fixed onto the pad, a notch is provided in the longitudinal direction of the pressed wire. A wire connection pad characterized by having a hole or a hole. 2. Claim 1, wherein the notch or hole is provided to include at least a point of contact between the wire and the pressing part of the bonding tool projected onto the flat plate from the pressing direction. The wire connection pad according to claim 2, wherein the wire connection pad 3 described in claim 2 and the cutout or hole are formed in a curved line. 4. The wire connection pad according to claim 2, wherein the cutout or hole has a polygonal shape.
JP62280181A 1987-11-05 1987-11-05 Pad for connecting wiring Pending JPH01122129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62280181A JPH01122129A (en) 1987-11-05 1987-11-05 Pad for connecting wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62280181A JPH01122129A (en) 1987-11-05 1987-11-05 Pad for connecting wiring

Publications (1)

Publication Number Publication Date
JPH01122129A true JPH01122129A (en) 1989-05-15

Family

ID=17621426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62280181A Pending JPH01122129A (en) 1987-11-05 1987-11-05 Pad for connecting wiring

Country Status (1)

Country Link
JP (1) JPH01122129A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148959A (en) * 1991-02-07 1992-09-22 Tribotech Wedge bonding tool
WO2019197304A1 (en) 2018-04-11 2019-10-17 Abb Schweiz Ag Material reduced metallic plate on power semiconductor chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148959A (en) * 1991-02-07 1992-09-22 Tribotech Wedge bonding tool
WO2019197304A1 (en) 2018-04-11 2019-10-17 Abb Schweiz Ag Material reduced metallic plate on power semiconductor chip
CN111937127A (en) * 2018-04-11 2020-11-13 Abb电网瑞士股份公司 Reduced material metal plate on power semiconductor chip
US11538734B2 (en) 2018-04-11 2022-12-27 Hitachi Energy Switzerland Ag Power semiconductor package with highly reliable chip topside
CN111937127B (en) * 2018-04-11 2024-04-02 日立能源有限公司 Reduced material metal plate on power semiconductor chip

Similar Documents

Publication Publication Date Title
US20040041000A1 (en) Capillary for wire bonding and method of wire bonding using it
JPS6353959A (en) Lead frame for semiconductor device and manufacture thereof
JP4526957B2 (en) Semiconductor device, bonding method and bonding ribbon
US5408127A (en) Method of and arrangement for preventing bonding wire shorts with certain integrated circuit components
JPH01122129A (en) Pad for connecting wiring
JP3129272B2 (en) Semiconductor device, manufacturing apparatus and manufacturing method thereof
JPH04155854A (en) Semiconductor integrated circuit device and lead frame therefor
JP3404998B2 (en) Bonding tool
JPH06224261A (en) Semiconductor device
JPH05251450A (en) Semiconductor integrated circuit device
JP3202193B2 (en) Wire bonding method
JP4060797B2 (en) Semiconductor element and contact method of semiconductor element
JPH0294646A (en) Tool for bonding
JPH027446A (en) Wire bonding structure of compact ic
JP2762875B2 (en) TAB inner lead joining method
JPS6254500A (en) Wire connection
JPS6188537A (en) Lead of semiconductor device
JPH03296234A (en) Wire-bonding method of semiconductor device
JPH02159752A (en) Lead frame
JPH0262055A (en) Formation of bump and bonding wedge used for it
JPH01248655A (en) Manufacture of lead frame for semiconductor device
JPH02122535A (en) Semiconductor device
JPH05326812A (en) Lead frame for semiconductor device, wire bonding device and wire bonding method for semiconductor chip using thereof
JPH03270060A (en) Pin grid array-package
JPH0485843A (en) Ultrasonic wire boding method