JPH01120029A - Scribe structure of semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To reduce deterioration of electric reliability of a semiconductor which is made by dicing a semiconductor substrate formed of a plurality of circuits to each chip, by covering the insulation film of chip end with an insulation film successively. CONSTITUTION:The edge of each chip of a semiconductor device which has a plurality of circuits on a semiconductor substrate 6 has a scribe structure that the edge of a primary insulation film 2 is covered with a secondary insulation film 3 which is provided on the primary insulation film 2, and the edge of the secondary insulation film 3 is covered with a third insulation film 4. For instance, the edge of a chip is constructed so that the secondary insulation film 3 covers a thermal oxide film 2 including its side, the third insulation film 4 covers the secondary insulation film 3, and the fourth passivation film 5 covers the third insulation film 4. Interface of each insulation film can be thereby reduced at the chip edge and the thickened insulation film including its side prevents water and etchant from entering, thus preventing deterioration of electric reliability.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a scribe structure for use in a semiconductor device in which a plurality of circuits are placed on a semiconductor substrate and each chip is divided for use.

[Summary of the invention]

In a semiconductor device in which multiple circuits are created on a semiconductor substrate and each chip is diced, deterioration in electrical reliability is reduced by covering the insulating film at the edge of the chip one after another with an insulating film. It is.

When the insulating films are stacked in multiple layers and the etching solution is applied all at once during final passivation patterning, the etching solution enters from the interface between the insulating films and side etching occurs.

Additionally, when dicing the scribe, cracks occur in the overcoat, allowing moisture to easily penetrate into the inside of the chip, significantly reducing electrical reliability.

[Means for Solving Problem 6] The scribe structure in a semiconductor device according to the present invention is characterized in that the next insulating film successively covers the lower insulating film in both the vertical and horizontal directions at the end of the chip.

〔Example〕

Hereinafter, the present invention will be described in detail based on examples.

FIG. 1 is a sectional view of an embodiment of the present invention. Second
The figure shows a conventional scribe structure.

Figure 1 shows an example of a semiconductor manufacturing device in which an insulating film is overlaid on the edge of a chip, with a third insulating film covering the second thermal oxide film in the lateral direction, and a fourth insulating film covering an insulating film of m3. This is an example of a scribe structure in which a fifth insulating film is covered with a fourth insulating film.

〔Effect of the invention〕

As described above, according to the present invention, each disconnection radius at the end of the chip is
By reducing the interface with the film as much as possible and making the insulating film thicker in the lateral direction, moisture and etching solution are prevented from entering, thereby preventing deterioration of electrical reliability. or,
Even if chips occur in the bassinet during dicing, the intrusion into the interior is minimized, reducing damage to chips and improving quality.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing an embodiment of a scribe structure of a semiconductor device according to the present invention. FIG. 2 is a cross-sectional view showing a scribe structure of a conventional semiconductor device. 1... Semiconductor substrate 2... Thermal oxide film 3... Insulating film 4... Insulating film 5... Absolute am (vanvation crotch) 6... Silicon substrate or more Applicant Seiko Epun Co., Ltd.

Claims (1)

[Claims] In a semiconductor device having a plurality of circuits on a semiconductor substrate, a first insulating film and a second insulating film provided on the first insulating film are arranged at the ends of the first insulating film at each chip end. 1. A scribe structure for semiconductor manufacturing equipment, characterized in that the scribe structure has a scribe structure in which a third insulating film covers an end of the second insulating film.