JPH01119595A - Material for single crystal growing crucible - Google Patents
Material for single crystal growing crucibleInfo
- Publication number
- JPH01119595A JPH01119595A JP27803387A JP27803387A JPH01119595A JP H01119595 A JPH01119595 A JP H01119595A JP 27803387 A JP27803387 A JP 27803387A JP 27803387 A JP27803387 A JP 27803387A JP H01119595 A JPH01119595 A JP H01119595A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- formation
- crucible
- crystal grains
- grain boundaries
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 title claims abstract description 28
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000005266 casting Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000005098 hot rolling Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 239000000155 melt Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、単結晶育成用の容器である“るつぼパを作る
為の材料の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to improvements in materials for making a crucible, which is a container for growing single crystals.
（従来の技術とその問題点）
イリジウムは、高い融点と耐蝕性を併せ持ち、単結晶育
成用の容器等の製作に用いられている。(Prior Art and Its Problems) Iridium has both a high melting point and corrosion resistance, and is used for manufacturing containers for growing single crystals.
特にＹＡＧなとの単結晶を育成する場合に、２０００°
Ｃにさらされる“るつぼ°゛は結晶粒が粗大化し易く、
粗大化した結晶粒界から発生したクラックより液洩れが
生じるものである。このような事故を防止するには、高
温での結晶粒の粗大化を防止することが必要になる。Especially when growing single crystals such as YAG,
In a crucible exposed to C, crystal grains tend to become coarse,
Liquid leakage occurs due to cracks generated from coarse grain boundaries. In order to prevent such accidents, it is necessary to prevent crystal grains from becoming coarser at high temperatures.
（発明の目的）
本発明は、上記事情に鑑みなされたもので、高温での結
晶粒の粗大化を防止できる単結晶育成るつぼ用材料を提
供することを目的とするものである。(Object of the Invention) The present invention was made in view of the above circumstances, and an object of the present invention is to provide a material for a single crystal growth crucible that can prevent coarsening of crystal grains at high temperatures.
（問題点を解決するための手段）
上記問題点を解決するための本発明の単結晶育成るつぼ
用材料は、純イリジウムに、重量比で２００ｐｐｍ〜１
１００００ｐｐのジルコニウムが含有されていることを
特徴とするものである。(Means for Solving the Problems) In order to solve the above problems, the single crystal growth crucible material of the present invention contains pure iridium in a weight ratio of 200 ppm to 1.
It is characterized by containing 10,000 pp of zirconium.
上記の如くジルコニウムの含有量を２００ｐｐｍ〜１０
０００ｐｐ−とした理由は、２００ｐｐｍ未満では高温
での結晶粒の粗大化を防げず、１１００００ｐｐを超え
ると粒界にジルコニウムが偏析し、加工性が劣化するか
らである。As mentioned above, the zirconium content is 200 ppm to 10
The reason why it is set at 000 pp- is that if it is less than 200 ppm, coarsening of crystal grains at high temperatures cannot be prevented, and if it exceeds 110,000 ppm, zirconium segregates at the grain boundaries and the workability deteriorates.
（作用）
本発明の単結晶育成るつぼ用材料は、前述の如き成分組
成であるので、高温での結晶粒の粗大化を防止できて、
結晶粒界からクラックが発生することが無い。(Function) Since the material for a single crystal growth crucible of the present invention has the above-mentioned composition, coarsening of crystal grains at high temperatures can be prevented,
Cracks do not occur from grain boundaries.
（実施例）
本発明の単結晶育成るつぼ用材料の一実施例を説明する
。純イリジウムに、ジルコニウムを１０００ｐｐ−含有
する材料を溶解し、１５００℃で熱間鋳造を行い、さら
に１０００°Ｃで熱間圧延を繰返して、厚さ１ｍの板材
を得た。(Example) An example of the material for a single crystal growth crucible of the present invention will be described. A material containing 1000 pp- of zirconium was dissolved in pure iridium, hot cast at 1500°C, and hot rolled at 1000°C repeatedly to obtain a plate material with a thickness of 1 m.
一方、従来例として、純イリジウムを溶解し、１５００
℃で熱間鋳造を行い、さらに１０００’Ｃで熱間圧延を
繰返して、厚さ１ｍの板材を得た。On the other hand, as a conventional example, pure iridium was dissolved and 1500
Hot casting was carried out at 100°C, and hot rolling was repeated at 1000'C to obtain a plate material with a thickness of 1 m.
これら実施例及び従来例の板材を８００〜１５００℃ま
での温度で５分間加熱した後、表面硬さを測定した処、
第１図のグラフに示すような結果を得た。After heating the plate materials of these examples and conventional examples at a temperature of 800 to 1500°C for 5 minutes, the surface hardness was measured.
The results shown in the graph of FIG. 1 were obtained.
このグラフで判るように実施例の単結晶育成るつぼ用材
料は従来例の単結晶育成るつぼ材料に比し、ＨＶ硬さが
高いことが判る。As can be seen from this graph, the single crystal growth crucible material of the example has higher HV hardness than the conventional single crystal growth crucible material.
また前記実施例及び従来例の材料を、１５００°Ｃで加
熱後の組織を観察した処、従来例の材料は第２図ａに示
す如（結晶粒の粗大化が見られたのに対し、実施例の材
料は第２図すに示す如く結晶粒が微細であった。Furthermore, when we observed the structures of the materials of the above embodiment and the conventional example after heating them at 1500°C, we found that the materials of the conventional example showed coarsening of the crystal grains, as shown in Fig. 2a. The material of the example had fine crystal grains as shown in Figure 2.
（発明の効果）
以上の説明で判るように本発明の単結晶育成るつぼ用材
料は、高温での結晶粒の粗大化を防止できて、結晶粒が
微細であるので、硬さが高く、結晶粒界からクランクが
発生することが無いので、液洩れの無い単結晶育成るつ
ぼを作ることができるという効果がある。(Effects of the Invention) As can be seen from the above explanation, the material for single crystal growth crucibles of the present invention can prevent coarsening of crystal grains at high temperatures and has fine crystal grains, so it has high hardness and crystallization. Since cranks do not occur from grain boundaries, it is possible to create a single crystal growth crucible without liquid leakage.
第１図は本発明の実施例の単結晶育成るつぼ用材料と従
来例の単結晶育成るつぼ用材料の熱処理温度と表面硬さ
を示すグラフ、第２図ａは従来例の単結晶育成るつぼ用
材料の組織を示す図、第２図すは本発明の実施例の単結
晶育成るつぼ用材料の組織を示す図である。
出願人 田中貴金属工業株式会社
第１図
１友 （°０）
第２図（Ｑ）
第２図（ｂ）Figure 1 is a graph showing the heat treatment temperature and surface hardness of the single crystal growth crucible material of the embodiment of the present invention and the conventional single crystal growth crucible material, and Figure 2a is the graph for the conventional single crystal growth crucible material. FIG. 2 is a diagram showing the structure of a material for a single crystal growth crucible according to an embodiment of the present invention. Applicant Tanaka Kikinzoku Kogyo Co., Ltd. Figure 1 1 friend (°0) Figure 2 (Q) Figure 2 (b)
Claims (1)
ｐｍのジルコニウムが含有されていることを特徴とする
単結晶育成るつぼ用材料。200ppm to 10000p in weight ratio to pure iridium
A single crystal growth crucible material characterized by containing pm zirconium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27803387A JPH01119595A (en) | 1987-11-02 | 1987-11-02 | Material for single crystal growing crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27803387A JPH01119595A (en) | 1987-11-02 | 1987-11-02 | Material for single crystal growing crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01119595A true JPH01119595A (en) | 1989-05-11 |
Family
ID=17591712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27803387A Pending JPH01119595A (en) | 1987-11-02 | 1987-11-02 | Material for single crystal growing crucible |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01119595A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08311584A (en) * | 1995-03-15 | 1996-11-26 | Natl Res Inst For Metals | Refractory superalloy |
| WO2004007782A1 (en) * | 2002-07-13 | 2004-01-22 | Johnson Matthey Public Limited Company | Alloy |
| WO2006119116A3 (en) * | 2005-04-29 | 2006-12-21 | Medtronic Vascular Inc | Use of platinum group metals in vascular devices and method of texturing platinum group metals |
| CN108421824A (en) * | 2018-03-12 | 2018-08-21 | 陕西三毅有岩材料科技有限公司 | Iridium plate and its processing method, iridium crucible |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57156400A (en) * | 1981-03-23 | 1982-09-27 | Hitachi Metals Ltd | Crucible for preparing single crystal |
| JPS5832099A (en) * | 1981-08-21 | 1983-02-24 | Hitachi Metals Ltd | Preparation of single crystal |
-
1987
- 1987-11-02 JP JP27803387A patent/JPH01119595A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57156400A (en) * | 1981-03-23 | 1982-09-27 | Hitachi Metals Ltd | Crucible for preparing single crystal |
| JPS5832099A (en) * | 1981-08-21 | 1983-02-24 | Hitachi Metals Ltd | Preparation of single crystal |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08311584A (en) * | 1995-03-15 | 1996-11-26 | Natl Res Inst For Metals | Refractory superalloy |
| WO2004007782A1 (en) * | 2002-07-13 | 2004-01-22 | Johnson Matthey Public Limited Company | Alloy |
| US7481971B2 (en) | 2002-07-13 | 2009-01-27 | Johnson Matthey Public Limited Company | Iridium alloy |
| WO2006119116A3 (en) * | 2005-04-29 | 2006-12-21 | Medtronic Vascular Inc | Use of platinum group metals in vascular devices and method of texturing platinum group metals |
| US7309353B2 (en) | 2005-04-29 | 2007-12-18 | Medtronic Vascular, Inc. | Use of platinum group metals in vascular devices and method of texturing platinum group metals |
| CN108421824A (en) * | 2018-03-12 | 2018-08-21 | 陕西三毅有岩材料科技有限公司 | Iridium plate and its processing method, iridium crucible |
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