JPH01112768A - High polymer radical element - Google Patents
High polymer radical elementInfo
- Publication number
- JPH01112768A JPH01112768A JP62270731A JP27073187A JPH01112768A JP H01112768 A JPH01112768 A JP H01112768A JP 62270731 A JP62270731 A JP 62270731A JP 27073187 A JP27073187 A JP 27073187A JP H01112768 A JPH01112768 A JP H01112768A
- Authority
- JP
- Japan
- Prior art keywords
- radical
- high polymer
- polymer film
- diode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 12
- 150000003254 radicals Chemical class 0.000 claims abstract description 15
- 229920006254 polymer film Polymers 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920001197 polyacetylene Polymers 0.000 claims abstract description 5
- 150000005837 radical ions Chemical class 0.000 claims abstract description 4
- -1 oxygen radicals Chemical class 0.000 claims description 5
- 239000002120 nanofilm Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 229920001721 polyimide Polymers 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000008204 material by function Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229920000592 inorganic polymer Polymers 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は高分子の電子的スイッチ作用を利用したダイオ
ードあるいはトランジスタの材料構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a material structure for a diode or transistor that utilizes the electronic switching action of polymers.
従来、高分子による機能素子としては、アントラセン等
の高分子半導体によるダイオードやトランジスタの提案
はあった。Conventionally, as functional elements made of polymers, diodes and transistors made of polymer semiconductors such as anthracene have been proposed.
しかし、上記従来技術による高分子ダイオードやトラン
ジスタは主として単結晶アントラセン等を用いるために
生産性が悪（、又、耐湿性等の信頼性にも問題があった
。However, since the polymer diodes and transistors according to the above-mentioned prior art mainly use single crystal anthracene, etc., they have poor productivity (and also have problems in reliability such as moisture resistance).
本発明はかかる従来技術の問題点をなくシ、アモルファ
ス伏態でも機能を発揮する高分子機能素子を提供すると
共に、耐湿性等の信頼性の良い機能材料も、使用できる
ようにすることを目的とする。The purpose of the present invention is to eliminate the problems of the prior art and provide a polymeric functional element that exhibits its functions even in an amorphous state, while also making it possible to use highly reliable functional materials such as moisture resistance. shall be.
（問題点を解決するための手段〕
上記問題点を解決するために、本発明は高分子ラジカル
素子に関しく″１絶縁基板上には、ポリアセチレン等の
酸素ラジカル（０” ） 、水素ラジカル（Ｈ＠）等の
ラジカルあるいはヨウ素ラジカル、イオンやナトリウム
、ラジカル・イオン等のラジカル・イオンを含育する高
分子膜を１層あるいは多種類・多層形成し、ダイオード
あるいはトランジスタ構造となる手段をとる事、及び（
ｓν絶縁基板上には、シリコン酸化膜等の無機高分子膜
とポリアセチレン等の、高分子膜を多層に積属し、ダイ
オードあるいはトランジスタ構造となす手段をとる。(Means for Solving the Problems) In order to solve the above problems, the present invention relates to a polymer radical element. Forming one layer or multiple types/multilayers of polymer films containing radicals such as @) or iodine radicals, ions, sodium, radical ions, etc. to form a diode or transistor structure; as well as(
On the sv insulating substrate, an inorganic polymer film such as a silicon oxide film and a polymer film such as polyacetylene are laminated in multiple layers to form a diode or transistor structure.
高分°子膜中や無機分子膜中にラジカル元素が含存され
ると、該ラジカル元素を橋渡し役として、電気伝導やス
イッチ作用を起こせることができ、又、ラジカル・イオ
ンが含存されると丁度半導体におけるＰ−Ｎ接合の如く
作用し、バイポーラトランジスタやＭＩＳＦＥＴの動作
をさせることができる作用がある。When a radical element is contained in a polymer film or an inorganic molecular film, electrical conduction and switching action can be caused by the radical element acting as a bridge, and radical ions are also contained. It acts just like a PN junction in a semiconductor, and has the ability to operate as a bipolar transistor or MISFET.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図及び第２図は本発明の実施例を示す高分子ラジカ
ル素子の断面図であり、第３図はその電気的特性の一例
である。1 and 2 are cross-sectional views of a polymer radical device according to an embodiment of the present invention, and FIG. 3 is an example of its electrical characteristics.
第１図では、絶縁基板１の表面に金属又はを機導電瞑か
ら成る電極１を形成し、その上に、ポリアセチレンある
いは弗素樹脂やポリイミド膜等から成る高分子膜３を形
成し、その上に第２の電極４を第１の１（１極２と同様
の材料により形成し、ダイオード構造となしたものであ
る。In FIG. 1, an electrode 1 made of metal or conductive material is formed on the surface of an insulating substrate 1, and a polymer film 3 made of polyacetylene, fluororesin, polyimide film, etc. is formed on top of the electrode 1. The second electrode 4 is formed of the same material as the first electrode 2 and has a diode structure.
第２図は、絶縁１材１１の表面に第１の電極１２を形成
後、Ｓ １０ ＊ 、Ｓ ｓ ３ Ｎ ａあるいはＡρ
ｇｏｚ等から成る無機分子膜１３を形成し、その上にポ
リイミド膜等から成る高分子膜１４を形成し、その上に
第２の電極１５を形成してダイオード構造となした。も
のである。FIG. 2 shows that after forming the first electrode 12 on the surface of the insulating material 11, S 10 *, S s 3 Na or Aρ
An inorganic molecular film 13 made of goz or the like was formed, a polymer film 14 made of a polyimide film or the like was formed thereon, and a second electrode 15 was formed thereon to form a diode structure. It is something.
ｔｊＥａ図は、第１図あるいは第２図のダイオードの電
圧−電流特性の代表例を示したもので、高分子膜中に含
まれるラジカルが２つの異なる分布ヲ示すと、第３図の
如く、極性の異光性を示し、−種のラジカルで且つ第１
と第２の電極の材料が同一の場合には等方性を示すこと
となる。The tjEa diagram shows a typical example of the voltage-current characteristics of the diode shown in FIG. 1 or 2. If the radicals contained in the polymer film show two different distributions, as shown in FIG. 3, It exhibits polar heterochromia, is a -species radical, and is the first
When the materials of the second electrode and the second electrode are the same, it exhibits isotropy.
更に、ｆｆ１２図の分子膜間に第３のＷ１極を挿入した
り、あるいはＭＩＳＦＥＴＩ造を作成すれば、トランジ
スタ構造とその動作をする事は云うまでもない。Furthermore, it goes without saying that if a third W1 pole is inserted between the molecular films shown in the ff12 diagram, or if a MISFETI structure is created, the transistor structure and its operation can be realized.
更に異なる高分子膜を多層に形成しても良いことは云う
までもない。It goes without saying that it is also possible to form multiple layers of different polymer films.
本発明による高分子ラジカル素子により、高分子による
機能素子が安定に信頼住良（製作できる効果がある。The polymer radical device according to the present invention has the advantage that polymer functional devices can be produced stably and reliably.
第１図及び第２図は本発明の実施例を示す高分子ラジカ
ル素子の断面図、第３図はその電圧−電流特性例を示す
図。
１．１１・・・絶縁基板
２．１２・・・第１の電極
３．１４・・・高分子膜
４．１５・・・第２の電極
１３・・・無機高分子膜。
以 上
出願人 セイコーエプソン株式会社FIGS. 1 and 2 are cross-sectional views of a polymer radical element showing an embodiment of the present invention, and FIG. 3 is a diagram showing an example of its voltage-current characteristics. 1.11... Insulating substrate 2.12... First electrode 3.14... Polymer film 4.15... Second electrode 13... Inorganic polymer film. Applicant: Seiko Epson Corporation
Claims (2)
ル（Ｏ゜）、水素ラジカル（Ｈ゜）等のラジカルあるい
はヨウ素ラジカルイオンやナトリウムラジカルイオン等
のラジカルイオンを含有する高分子膜を１層あるいは多
種類・多層形成し、ダイオードあるいはトランジスタ構
造となす事を特徴とする高分子ラジカル素子。(1) On the insulating substrate, a single layer or a polymer film containing radicals such as oxygen radicals (O゜), hydrogen radicals (H゜) such as polyacetylene, or radical ions such as iodine radical ions and sodium radical ions is applied. A polymer radical element characterized by forming many types and layers to form a diode or transistor structure.
とポリアセチレン等の高分子膜を多層に積層し、ダイオ
ードあるいはトランジスタ構造となす事を特徴とする特
許請求の範囲第１項記載の高分子ラジカル素子。(2) A high-performance semiconductor according to claim 1, characterized in that an inorganic molecular film such as a silicon oxide film and a polymer film such as polyacetylene are laminated in multiple layers on an insulating substrate to form a diode or transistor structure. Molecular radical element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62270731A JPH01112768A (en) | 1987-10-27 | 1987-10-27 | High polymer radical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62270731A JPH01112768A (en) | 1987-10-27 | 1987-10-27 | High polymer radical element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01112768A true JPH01112768A (en) | 1989-05-01 |
Family
ID=17490173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62270731A Pending JPH01112768A (en) | 1987-10-27 | 1987-10-27 | High polymer radical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01112768A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5802634A (en) * | 1995-04-21 | 1998-09-08 | Aprica Kassai Kabushikikaisha | Bed with height adjusting means, convertible from infant use to adult use |
| US6348700B1 (en) | 1998-10-27 | 2002-02-19 | The Mitre Corporation | Monomolecular rectifying wire and logic based thereupon |
-
1987
- 1987-10-27 JP JP62270731A patent/JPH01112768A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5802634A (en) * | 1995-04-21 | 1998-09-08 | Aprica Kassai Kabushikikaisha | Bed with height adjusting means, convertible from infant use to adult use |
| US6348700B1 (en) | 1998-10-27 | 2002-02-19 | The Mitre Corporation | Monomolecular rectifying wire and logic based thereupon |
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