JPH01112546A - Production of optical memory element - Google Patents
Production of optical memory elementInfo
- Publication number
- JPH01112546A JPH01112546A JP26959687A JP26959687A JPH01112546A JP H01112546 A JPH01112546 A JP H01112546A JP 26959687 A JP26959687 A JP 26959687A JP 26959687 A JP26959687 A JP 26959687A JP H01112546 A JPH01112546 A JP H01112546A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- memory element
- polycarbonate
- optical memory
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000004033 plastic Substances 0.000 claims abstract description 8
- 229920003023 plastic Polymers 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 abstract description 26
- 239000004417 polycarbonate Substances 0.000 abstract description 8
- 229920000515 polycarbonate Polymers 0.000 abstract description 8
- 239000011241 protective layer Substances 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 238000009834 vaporization Methods 0.000 abstract description 2
- 230000008016 vaporization Effects 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920005668 polycarbonate resin Polymers 0.000 description 4
- 239000004431 polycarbonate resin Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光を用いて情報の記録、再生または消去を行う
光メモリ素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing an optical memory element that records, reproduces, or erases information using light.
従来の光メモリ素子は基板としてガラスやアクリル樹脂
、ポリカーボネート樹脂などが用いられている。ガラス
はフォトポリマー法やフォトエツチング法によりトラッ
キング用の溝やビットを形成して、アクリル樹脂やポリ
カーボネート樹脂は射出成形、射出圧縮成形またはフォ
トポリマー法によりトラッキング用の溝やピットを形成
していた。また、ポリカーボネート樹脂は複屈折を低下
させるため基板に温度をかけるアニール法などが試みら
れている。Conventional optical memory elements use glass, acrylic resin, polycarbonate resin, or the like as a substrate. For glass, tracking grooves and bits are formed using a photopolymer method or photoetching method, and for acrylic resin or polycarbonate resin, tracking grooves and pits are formed using injection molding, injection compression molding, or a photopolymer method. Furthermore, in order to reduce birefringence of polycarbonate resin, attempts have been made to use an annealing method in which the substrate is heated.
しかし従来技術では、以下の様な問題点を有していた。 However, the conventional technology has the following problems.
ガラスは比重が大きくディスク状の素子においては回転
抵抗が大きくしかも割れ易いため取り扱いが難しい、更
に加工も難しいのでコスト高となる。アクリル樹脂は吸
湿変形量、熱変形量が大きいのでセラミックスの保護膜
を用いる場合などにそのセラミックス層にクランクを生
じやすく信頼性が低い、ポリカーボネート樹脂は吸湿変
形量、熱変形量は小さいが光弾性定数が大きいので複屈
折が大きくなり信号の低下をきたす。そこで成形の条件
を変えたり、アニール法により複屈折を低下させようと
する試みもなされているが、成形の条件を変えただけで
は複屈折を低下させることは非常に難しく、また、複屈
折を低下させ得る程基板を加熱すると熱により基板が変
形してしまう。Glass has a high specific gravity, and a disk-shaped element has a high rotational resistance and is easily broken, making it difficult to handle. Furthermore, it is difficult to process, resulting in high costs. Acrylic resin has a large amount of deformation due to moisture absorption and thermal deformation, so when a ceramic protective film is used, the ceramic layer tends to crack, resulting in low reliability. Polycarbonate resin has a small amount of deformation due to moisture absorption and thermal deformation, but is photoelastic. Since the constant is large, birefringence increases and the signal decreases. Attempts have been made to reduce birefringence by changing molding conditions or by annealing, but it is extremely difficult to reduce birefringence by simply changing molding conditions. If the substrate is heated to the extent that it can be lowered, the substrate will be deformed by the heat.
そこで本発明はこの様な問題点を解決するものでその目
的とするところはプラスチック基板を用いても吸湿変形
量、熱変形量とも問題がなく複屈折により信号の低下を
きたすという問題もなく、保護層にクランクを生じにく
い信幀性のある光メモリ素子を提供するところにある。Therefore, the present invention is intended to solve these problems, and its purpose is to use a plastic substrate without any problems with moisture absorption deformation or thermal deformation, and without the problem of signal deterioration due to birefringence. The object of the present invention is to provide a reliable optical memory element that does not easily cause cranking in the protective layer.
本発明の光メモリ素子は、光を用いて情報の記録、再生
または消去を行う光メモリ素子に於いて、基板としてプ
ラスチックを用いて、そのプラスチック基板にマイクロ
波による処理を施すことを特徴とする。The optical memory element of the present invention is an optical memory element that records, reproduces, or erases information using light, and is characterized by using plastic as a substrate and subjecting the plastic substrate to microwave treatment.
以下本発明につして図面に基づいて説明する。 The present invention will be explained below based on the drawings.
第１図は本発明の光メモリ素子の製造方法の概略図であ
る。第１図の工程のマイクロ波による処理についてはポ
リカーボネートを例にとって説明する。射出成形してデ
ィスク状にできるポリカーボネートは現在ビスフェノー
ルＡの炭酸エステル型のものが用いられて、ガラス転移
温度は通常１３０″Ｃから１５０°Ｃである。マイクロ
波による処理の効果を出すために複屈折を低下させたい
面に水を吸着させ、大気圧で処理するとマイクロ波によ
る熱と水の気化熱で１００°Ｃ近辺に処理熱をおいてお
くことができる。圧力を上げると１１０℃から１２０°
Ｃ近辺に処理熱をおくことも可能である。或いは、水の
代わりに沸点が１２０°Ｃの極性分子を吸着させても１
２０°Ｃ近辺に処理熱をおくことができる。この例とし
ては高級アルコールと水の共沸混合物などが挙げられる
が、多成分系になるとプラスチックへの吸着度合が異な
るので注意を要する。この様に圧力や吸着させる物質の
種類を変えることにより処理温度を自由に変えることが
できる。また、このマイクロ波による処理は基板を射出
成形して複屈折が安定していないときの方が効果がある
ため、本実施例では基板を射出圧縮成形して５分以内に
マグネトロン発振方式で５分間この処理を行った。FIG. 1 is a schematic diagram of a method for manufacturing an optical memory element of the present invention. The microwave treatment in the process shown in FIG. 1 will be explained using polycarbonate as an example. The polycarbonate that can be made into disk shapes by injection molding is currently a carbonate type of bisphenol A, and its glass transition temperature is usually between 130''C and 150°C. If water is adsorbed on the surface where you want to reduce refraction and treated at atmospheric pressure, the processing heat can be kept at around 100°C due to the heat from the microwave and the heat of vaporization of the water.If you increase the pressure, it will be possible to keep the processing heat at around 100°C from 110°C to 120°C. °
It is also possible to place the processing heat near C. Alternatively, if a polar molecule with a boiling point of 120°C is adsorbed instead of water, 1
Processing heat can be kept at around 20°C. An example of this is an azeotropic mixture of higher alcohol and water, but care must be taken when using a multi-component system as the degree of adsorption to plastics will vary. In this way, the treatment temperature can be freely changed by changing the pressure and the type of substance to be adsorbed. Additionally, this microwave treatment is more effective when the substrate is injection molded and the birefringence is not stable, so in this example, the substrate is injection compression molded and within 5 minutes, the magnetron oscillation This treatment was carried out for a minute.
第２図は本発明の処理を施した基板を用いて記録層部を
成膜したときと何の処理も施していない基板を用いて記
録層部を成膜したときとアニール処理をして透明な基板
と紫外線硬化樹脂を用いて貼り合わせたときのディスク
の半径位置とＣ／Ｎの関係を示す図である。１は本発明
の処理を施したときで、２は何の処理も施さなかったと
きで、３は１２０°Ｃで５時間アニール処理をしたとき
を示す。記録層部はＮｄＤｙＦｅＣｏの記録層を５ｉＡ
ＩＮの保護層でサンドインチした構造になっている。貼
り合わせに用いた透明な基板としては記録層部を成膜し
た基板と同じ厚さ（１，２閣）のポリカーボネート基板
を用いた。貼り合わせに用いた紫外線硬化樹脂はネオペ
ンチルグリコールジアクリレート４５重量パーセント、
ジペンタエリスリトールへキサアクリレート５０重量パ
ーセント、チバガイギー社（西ドイツ）のイルガキュア
ー９０７を５重量パーセント混合したものを用いた。そ
して、高圧水銀灯により紫外線を照射してその紫外線硬
化樹脂を硬化させた。この１から３を７５°Ｃ８５％Ｒ
Ｈ下においたところ、１２０°Ｃでアニールしたものと
何の処理も施さなかったものはクラックが発生した。１
２０ ”Ｃでアニール処理をした基板を用いたもののＣ
／Ｎは本発明による処理を施したものとあまり変わらな
いがセラミックス層に多くのクラックを生じてしまった
。Figure 2 shows the cases in which the recording layer was formed using a substrate treated with the present invention, the case in which the recording layer was formed using a substrate without any treatment, and the case in which the recording layer was formed into a transparent film after annealing. FIG. 3 is a diagram showing the relationship between the radial position and C/N of a disk when it is bonded to a substrate using an ultraviolet curing resin. 1 is when the treatment of the present invention was applied, 2 is when no treatment was applied, and 3 is when annealing treatment was performed at 120° C. for 5 hours. The recording layer part is a NdDyFeCo recording layer of 5iA.
It has a sandwiched structure with an IN protective layer. As the transparent substrate used for bonding, a polycarbonate substrate having the same thickness (1 and 2 layers) as the substrate on which the recording layer portion was formed was used. The ultraviolet curing resin used for lamination was 45% by weight neopentyl glycol diacrylate.
A mixture of 50 weight percent dipentaerythritol hexaacrylate and 5 weight percent Irgacure 907 from Ciba Geigy (West Germany) was used. Then, the ultraviolet curing resin was cured by irradiating it with ultraviolet light using a high-pressure mercury lamp. 75°C85%R
When placed under H, cracks occurred in the sample annealed at 120°C and the sample without any treatment. 1
C using a substrate annealed at 20”C
/N was not much different from that treated according to the present invention, but many cracks occurred in the ceramic layer.
このアニール温度及び時間を種々変えてクラックの発生
をみたものを表１に示す。表１の結果から分かるように
何の処理も施さなかったものは６５°Ｃで１２０℃で５
時間アニールしたものは７０″Ｃでクラックが発生した
。しかし、本発明による処理を施した基板を用いたもの
は７５°Ｃでもクランクは発生しなかった。この表１の
結果及び第２図の結果から分かる様に、本発明による処
理を施した基板を用いることにより高いＣ／Ｎでクラッ
クに対しても強い光メモリ素子になることが分かる。Table 1 shows the occurrence of cracks at various annealing temperatures and times. As can be seen from the results in Table 1, the samples without any treatment were heated at 65°C and at 120°C.
The one that was annealed for a long time cracked at 70"C. However, the one that used the substrate treated according to the present invention did not crack even at 75°C. The results shown in Table 1 and Figure 2 As can be seen from the results, it can be seen that by using the substrate treated according to the present invention, an optical memory element with a high C/N and strong against cracks can be obtained.
−表１−
Ｈ：変化なし
に：クララシフ発生
尚、本発明はこれらの実施例に限定されるものではなく
本発明の主旨を逸脱しない限り種々の変更は可能である
０例えば、本発明ではポリカーボネート樹脂を例にとっ
ているが、エポキシ樹脂、ポリエチレン、アクリル樹脂
などでもよく、記録層としてはＮｄＤｙＦｅＣｏ層の他
にＴｂＦｅＣ０層、ＧｄＴｂＦｅ層、ＧｄＴｂＦｅＣｏ
層、ＳｍＤｙＦｅＣｏ層、ＣｅＤｙＦｅＣｏ層などの光
磁気記録層の他に、Ｔｅ−ＴｅＯｘ層、Ａｇ−Ｚｎ層な
どの光層変化型記録層さらには有機色素を用いた記録層
を用いても一向に差し支えない。また、保！−層もＳ
１ＡＩＮ層の他に、５ｉＮＪｌｉ、ＡＩＮ層、５ｉＡ１
ＯＮＪｉなどを用いても良い。更に、接着層も紫外線硬
化型の他に熱硬化型、嫌気硬化型、ロールコート型など
を用いても良い。-Table 1- H: No change: Occurrence of clarasif Note that the present invention is not limited to these examples, and various changes can be made without departing from the gist of the present invention.For example, in the present invention, polycarbonate Although resin is taken as an example, epoxy resin, polyethylene, acrylic resin, etc. may also be used, and the recording layer may include a TbFeC0 layer, a GdTbFe layer, a GdTbFeCo layer, in addition to the NdDyFeCo layer.
In addition to the magneto-optical recording layers such as the SmDyFeCo layer and the CeDyFeCo layer, there is no problem in using optical layer changeable recording layers such as the Te-TeOx layer and the Ag-Zn layer, as well as recording layers using organic dyes. . Also, keep it! -The layer is also S
In addition to 1AIN layer, 5iNJli, AIN layer, 5iA1
ONJi or the like may also be used. Furthermore, the adhesive layer may also be of a thermosetting type, an anaerobic curing type, a roll coating type, etc. in addition to an ultraviolet curing type.
本発明の光メモリ素子は、プラスチック基板を用いても
吸湿変形量、熱変形量とも問題がなく複屈折により信号
の低下をきたすという問題もなく、保護層にクランクを
生じにくい信鯨性のある光メモリ素子を提供するという
効果を有する。The optical memory element of the present invention has no problem with moisture absorption deformation or thermal deformation even when a plastic substrate is used, there is no problem of signal deterioration due to birefringence, and the optical memory element has a reliable property that does not cause cranking in the protective layer. This has the effect of providing an element.
第１図は本発明の光メモリ素子の製造方法の椰略図であ
る。第２図は本発明の処理を施した基板を用いた場合と
、何の処理も施さなかったときのディスクの半径位置と
Ｃ／Ｎの関係を示す図である。
１・・・本発明によるマイクロ波処理を施した基板を用
いた場合
２・・・何の処理も施さなかった基板を用いた場合
３・・・１２０°Ｃで５時間アニール処理を施した場合
以上FIG. 1 is a schematic diagram of a method for manufacturing an optical memory device according to the present invention. FIG. 2 is a diagram showing the relationship between the radial position of the disk and the C/N when a substrate treated according to the present invention is used and when no treatment is applied. 1...When using a substrate subjected to microwave treatment according to the present invention 2...When using a substrate that has not been subjected to any treatment 3...When performing annealing treatment at 120°C for 5 hours that's all
Claims (1)
素子に於いて、基板としてプラスチックを用いて、該プ
ラスチック基板にマイクロ波による処理を施すことを特
徴とする光メモリ素子の製造方法。1. A method for manufacturing an optical memory element, which uses a plastic substrate for recording, reproducing, or erasing information using light, and the method comprises processing the plastic substrate using microwaves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26959687A JPH01112546A (en) | 1987-10-26 | 1987-10-26 | Production of optical memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26959687A JPH01112546A (en) | 1987-10-26 | 1987-10-26 | Production of optical memory element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01112546A true JPH01112546A (en) | 1989-05-01 |
Family
ID=17474566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26959687A Pending JPH01112546A (en) | 1987-10-26 | 1987-10-26 | Production of optical memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01112546A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159846A (en) * | 1987-12-17 | 1989-06-22 | Fujitsu Ltd | Production of magneto-optical disk |
-
1987
- 1987-10-26 JP JP26959687A patent/JPH01112546A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159846A (en) * | 1987-12-17 | 1989-06-22 | Fujitsu Ltd | Production of magneto-optical disk |
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