JPH01118236A - Production of optical memory element - Google Patents

Production of optical memory element

Info

Publication number
JPH01118236A
JPH01118236A JP27552387A JP27552387A JPH01118236A JP H01118236 A JPH01118236 A JP H01118236A JP 27552387 A JP27552387 A JP 27552387A JP 27552387 A JP27552387 A JP 27552387A JP H01118236 A JPH01118236 A JP H01118236A
Authority
JP
Japan
Prior art keywords
substrate
optical memory
memory element
treatment
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27552387A
Other languages
Japanese (ja)
Inventor
Masahiro Yatake
正弘 矢竹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP27552387A priority Critical patent/JPH01118236A/en
Publication of JPH01118236A publication Critical patent/JPH01118236A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an element which is less degraded in signal by hygroscopic deformation, thermal deformation and double refractions and is hardly cracked by subjecting a plastic substrate to a treatment by UV rays. CONSTITUTION:The substrate is molded by injection of polycarbonate of a carbonate type of bisphenol A. While a disk is kept rotated, the disk is uniformly subjected to intermittent irradiations of 30sec intervals at 80W/cm intensity by using a UV lamp which well emits light of <=300nm wavelength before the double refractions stabilize. The element which is less degraded in the signal by the hygroscopic deformation, thermal deformation and the double refractions is thereby obtd.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光を用いて1a報の記録、再生または消去を行
う光学的メモリ素子の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing an optical memory element that records, reproduces, or erases 1a information using light.

〔従来の技術〕[Conventional technology]

従来の光学的メモリ素子は基板としてガラスやアクリル
樹脂、ポリカーボネート樹脂などが用いられている。ガ
ラスはフォトポリマー法やフォトエツチング法により、
トラッキング用の溝やビットを形成して、アクリル樹脂
やポリカーボネート樹脂は射出成形、射出圧縮成形また
はフォトポリマー法によりトラッキング用の溝やピット
を形成していた。また、ポリカーボネート樹脂は複屈折
を低下させるため基板に温度をかけるアニール法などが
試みられている。
Conventional optical memory elements use glass, acrylic resin, polycarbonate resin, or the like as a substrate. Glass is made by photopolymer method or photoetching method.
Tracking grooves and bits are formed using acrylic resin or polycarbonate resin by injection molding, injection compression molding, or photopolymer method. Furthermore, in order to reduce birefringence of polycarbonate resin, attempts have been made to use an annealing method in which the substrate is heated.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし従来技術では、以下の様な問題点を仔していた。 However, the conventional technology has the following problems.

ガラスは比重が大きくディスク状の素子においては回転
抵抗が大きくしかも割れ易いため取り扱いが難しい、更
に加工も難しいのでコスト高となる。アクリル樹脂は吸
湿変形量、熱変形量が大きいのでセラミックスの保25
 mを用いる場合などに、そのセラミックス層にクラッ
クを生じやす(信頼性が低い。ポリカーボネート樹脂は
吸湿変形量、熱変形量は小さいが光弾性定数が大きいの
で複屈折が大きくなり信号の低下をきたす。そこで成形
の条件を変えたり、アニール法により複屈折を、低下さ
せようとする試みもなされているが、成形の条件を変え
ただけでは複屈折を低下させることは非常に難しく、ま
た、複屈折を低下させ得る程基板を加熱すると熱により
基板が変形してしまう。
Glass has a high specific gravity, and a disk-shaped element has a high rotational resistance and is easily broken, making it difficult to handle. Furthermore, it is difficult to process, resulting in high costs. Acrylic resin has a large amount of moisture deformation and thermal deformation, so it is difficult to maintain ceramics.
When using m, the ceramic layer tends to crack (low reliability).Polycarbonate resin has small moisture deformation and thermal deformation, but has a large photoelastic constant, so birefringence increases and the signal decreases. Therefore, attempts have been made to reduce birefringence by changing molding conditions or by annealing, but it is extremely difficult to reduce birefringence by simply changing molding conditions. If the substrate is heated enough to reduce refraction, the heat will deform the substrate.

そこで本発明はこの様な問題点を解決するものでその目
的とするところはプラスチック基板を用いても吸湿変形
量、熱変形量とも問題がなく複屈折により信号の低下を
きたすという問題もなく、保護層にクラックを生じにく
い信頼性のある光学的メモリ素子を提供するところにあ
る。
Therefore, the present invention is intended to solve these problems, and its purpose is to use a plastic substrate without any problems with moisture absorption deformation or thermal deformation, and without the problem of signal deterioration due to birefringence. The object of the present invention is to provide a reliable optical memory element whose protective layer is less likely to be cracked.

〔間居点を解決するための手段〕[Means for resolving gaps]

本発明の光学的メモリ素子は、光を用いて情報の記録、
再生または消去を行う光学的メモリ素子に於て、基板と
してプラスチックを用いて、そのプラスチック基板に紫
外線による処理を施すことを特做とする。
The optical memory device of the present invention records information using light,
In an optical memory element that is read or erased, a plastic substrate is used and the plastic substrate is treated with ultraviolet rays.

〔実施例〕〔Example〕

以下本発明について図面に基づいて説明する。 The present invention will be explained below based on the drawings.

第1図は本発明の光学的メモリ素子の製造方法の概略図
である。第1図の工程の紫外線による処理についてはポ
リカーボネートを例にとって説明する。射出成形してデ
ィスク杖にできるポリカーボネートは現在ビスフェ/−
ルAの炭酸エステル型のものが用いられて、ガラス転移
温度は通常130°Cから150°Cである。複屈折を
低下させたい面に紫外線が当たるようにして、ディスク
を回転させながらディスク面で紫外線が均一に照射され
るようにして、80W/cmの強度でインターパルを、
30秒とする間欠照射を10分間行なった。ポリカーボ
ネートはほぼ300nm以下の光は吸収するので300
nm以下の波長の光をよく出す紫外線ランプを用いると
よい。処理温度は1&仮のガラス転移温度によって異な
り、ガラス転移温度の10°Cから30°C低い温度が
よい。本実施例では、135’Cのポリカーボネートを
用いたので、処理温度を120℃とした。また、この紫
外線による処理は基板を成形して複屈折が安定しないう
ちに行った方が効果があるので、本実施例では成形して
30秒後にこの処理を行った。
FIG. 1 is a schematic diagram of a method for manufacturing an optical memory element according to the present invention. The treatment with ultraviolet rays in the process shown in FIG. 1 will be explained using polycarbonate as an example. Polycarbonate that can be injection molded into disc canes is currently called Bisphe/-
A carbonate ester type of Le A is used, and its glass transition temperature is usually 130°C to 150°C. Interpal was applied at an intensity of 80 W/cm while rotating the disk so that the ultraviolet rays were applied uniformly to the surface of the disk whose birefringence was to be reduced.
Intermittent irradiation for 30 seconds was performed for 10 minutes. Polycarbonate absorbs light of approximately 300 nm or less, so 300 nm
It is preferable to use an ultraviolet lamp that emits light with a wavelength of nm or less. The treatment temperature varies depending on the temporary glass transition temperature, and is preferably 10°C to 30°C lower than the glass transition temperature. In this example, since 135'C polycarbonate was used, the treatment temperature was 120C. Furthermore, since this treatment with ultraviolet rays is more effective if it is performed before the substrate is molded and the birefringence is not stabilized, in this example, this treatment was performed 30 seconds after molding.

第2図は本発明の処理を施した基板を用いて記0層部を
成膜したときと何の処理も施していない基板を用いて記
録層部を成膜したときとアニール処理をして透明な基板
と紫外線硬化樹脂を用いて貼り合わせたときのディスク
の半径位置とC/Nの関係を示す図である。1は本発明
の処理を施したときで、2は何の処理も施さなかったと
きで、3は120°Cで5時間アニール処理をしたとき
を示す。i2録局部はNdDYFeCoの記録層を5i
AINの保護層でサンドイッチした構造になっている。
Figure 2 shows a case in which the recording layer part was formed using a substrate treated according to the present invention, a recording layer part formed using a substrate without any treatment, and annealing treatment. FIG. 3 is a diagram showing the relationship between the radial position and C/N of a disk when a transparent substrate and an ultraviolet curing resin are used to bond the disk. 1 is when the treatment of the present invention was applied, 2 is when no treatment was applied, and 3 is when annealing treatment was performed at 120° C. for 5 hours. The i2 recording section uses a 5i NdDYFeCo recording layer.
It has a sandwich structure with a protective layer of AIN.

貼り合わせに用いた透明な基板としては記O層部を、成
膜した基板と同じ厚さ(1,2mm)のポリカーボネー
ト基板を用いた。貼り合わせに用いた紫外線硬化樹脂は
ブタンジオールジアクリレート20重量パーセント、ネ
オペンチルグリコールジアクリレート25宙量パーセン
ト、ジペンタエリスリトールへキサアクリレート50重
量パーセント、チバガイギー社(西ドイツ)のイルガキ
ュアー907を5重量パーセント混合したものを用いた
。そして、高圧水銀灯により紫外線を照射してその紫外
線硬化樹脂を硬化させた。この、1から3を75℃85
%RH下においたとと7)、120℃でアニールしたも
のと何の処理も施さなかったものはクラックが発生した
。120°Cでアニール処理をした基板を用いたものの
C/Nは本発明による処理を施したものとあまり変わら
ないがセラミックス層に多くのクラックを生じてしまっ
た。このアニール温度及び時間を種々変えてクラックの
発生をみたものを表1に示す。表1の結果から分かるよ
うに何の処理も施さなかったものは65℃で120℃で
5時間アニールしたものは70℃でクラックが発生した
。しかし、本発明による処理を施した基板を用いたもの
は75°Cでもクラックは発生しなかった。この表1の
結果及び第2図の結果から分かる様に、本発明に上る処
理を施した基板を用いることにより高いC/Nでクラッ
クに対しても強い光学的メモリ素子になることが分かる
As the transparent substrate used for bonding, a polycarbonate substrate having the same thickness (1 to 2 mm) as the substrate on which the film was formed was used. The ultraviolet curing resins used for lamination were 20% by weight of butanediol diacrylate, 25% by weight of neopentyl glycol diacrylate, 50% by weight of dipentaerythritol hexaacrylate, and 5% by weight of Irgacure 907 from Ciba Geigy (West Germany). A mixture was used. Then, the ultraviolet curing resin was cured by irradiating it with ultraviolet light using a high-pressure mercury lamp. This, 1 to 3 at 75℃85
% RH (7), cracks occurred in those annealed at 120° C. and those not subjected to any treatment. Although the C/N of a substrate annealed at 120° C. was not much different from that of a substrate treated according to the present invention, many cracks were generated in the ceramic layer. Table 1 shows the occurrence of cracks at various annealing temperatures and times. As can be seen from the results in Table 1, cracks occurred at 65°C in the case of no treatment and at 70°C in the case of annealing at 120°C for 5 hours. However, in the case of using a substrate treated according to the present invention, no cracks occurred even at 75°C. As can be seen from the results in Table 1 and the results in FIG. 2, it can be seen that by using a substrate treated according to the present invention, an optical memory element with a high C/N and strong against cracks can be obtained.

表    1 尚、本発明はこれらの実施例に限定されるものではなく
本発明の主旨を逸脱しない限り種々の変更は可能である
。例えば、本発明ではポリカーボネート樹脂を例にとっ
であるが、エポキシ樹脂、ポリスチレン、アクリル樹脂
などでもよく、高圧水銀灯の代わりに、メタルハライド
ランプ、ケミカルランプ、ハロゲンランプなどを、用い
てもよ(、適当に赤外線フィルターやコールドミラーを
用いるのも良い。また、紀0層としてはNdDyFeC
o層の他にTbFeCo5、GdTbFeFi、GdT
bFeCoG、S m D y F e Co 層、C
eDyFeCo層などの光磁気記録層の他に、Te−T
eOx層、A g −Z n A’Jなどの光用変化型
の記り層さらには何機色素を用いた記り層などを用いて
も一向に差し支えない。保護層についても同様で、5i
AIN層の他にSiN層、AING、5iA1ONff
lなどを用いてもよい。更に、接菅層も紫外線硬化型の
他に熱硬化型、嫌気硬化型、ロールコート型などを用い
てもよい。
Table 1 Note that the present invention is not limited to these examples, and various changes can be made without departing from the gist of the present invention. For example, although polycarbonate resin is used as an example in the present invention, epoxy resin, polystyrene, acrylic resin, etc. may also be used, and metal halide lamps, chemical lamps, halogen lamps, etc. may be used instead of high-pressure mercury lamps (as appropriate). It is also good to use an infrared filter or a cold mirror.Also, NdDyFeC can be used as the
In addition to the o layer, TbFeCo5, GdTbFeFi, GdT
bFeCoG, S m D y F e Co layer, C
In addition to magneto-optical recording layers such as eDyFeCo layers, Te-T
There is no problem in using an eOx layer, a photochangeable writing layer such as Ag-ZnA'J, or a writing layer using any number of dyes. The same goes for the protective layer, 5i
In addition to the AIN layer, there is a SiN layer, AIN, 5iA1ONff
l etc. may also be used. Furthermore, the contact layer may also be of a thermosetting type, an anaerobic curing type, a roll coating type, etc. in addition to an ultraviolet curing type.

〔発明の効果〕〔Effect of the invention〕

本発明の光学的メモリ素子は、プラスチックJλ板を用
いても吸湿変形量、熱変形量とも問題がなく複屈折によ
り信号の低下をきたすという問題もなく、保護層にクラ
ックを生じにくい信頼性のある光学的メモリ素子を提供
するという効果を有する。
The optical memory element of the present invention has no problems with moisture absorption deformation or thermal deformation even when using a plastic Jλ plate, and there is no problem of signal deterioration due to birefringence, and it is reliable and does not easily cause cracks in the protective layer. This has the effect of providing an optical memory element.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の光学的メモリ素子の製造方法の概略図
である。第2図は本発明の処理を施した基板を用いた場
合と、何の処理も施さなかったときのディスクの半径位
置とC/Nの関係を示す図である。 1・・・本発明による紫外線処理を施した基板を用いた
場合 2・・・何の処理も施さなかった基板を用いた場合 3・・・120 ’Cで5時間アニール処理を施した場
合 以  上
FIG. 1 is a schematic diagram of a method for manufacturing an optical memory element according to the present invention. FIG. 2 is a diagram showing the relationship between the radial position of the disk and the C/N when a substrate treated according to the present invention is used and when no treatment is applied. 1... When using a substrate treated with ultraviolet light according to the present invention 2... When using a substrate that has not been subjected to any treatment 3... When annealing at 120'C for 5 hours Up

Claims (1)

【特許請求の範囲】[Claims]  光を用いて情報の記録、再生または消去を行う光メモ
リ素子に於て、基板としてプラスチックを用いて、該プ
ラスチック基板に紫外線による処理を施すことを特徴と
する光学的メモリ素子の製造方法。
1. A method of manufacturing an optical memory element that records, reproduces, or erases information using light, using plastic as a substrate, and treating the plastic substrate with ultraviolet rays.
JP27552387A 1987-10-30 1987-10-30 Production of optical memory element Pending JPH01118236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27552387A JPH01118236A (en) 1987-10-30 1987-10-30 Production of optical memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27552387A JPH01118236A (en) 1987-10-30 1987-10-30 Production of optical memory element

Publications (1)

Publication Number Publication Date
JPH01118236A true JPH01118236A (en) 1989-05-10

Family

ID=17556646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27552387A Pending JPH01118236A (en) 1987-10-30 1987-10-30 Production of optical memory element

Country Status (1)

Country Link
JP (1) JPH01118236A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159846A (en) * 1987-12-17 1989-06-22 Fujitsu Ltd Production of magneto-optical disk
JP2010001959A (en) * 2008-06-19 2010-01-07 Bando Chem Ind Ltd Low dust generating belt

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159846A (en) * 1987-12-17 1989-06-22 Fujitsu Ltd Production of magneto-optical disk
JP2010001959A (en) * 2008-06-19 2010-01-07 Bando Chem Ind Ltd Low dust generating belt

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