JPH01111795A - Liquid phase epitaxy growing device - Google Patents

Abstract

PURPOSE:To grow crystals on a substrate with a melt having a normal compsn. by providing covers consisting of materials which suppress the unnecessary evaporation on the substrate surface just before crystal growth and during the crystal growth so as to face the substrate surface. CONSTITUTION:A cover holder 5 exists in the position where the GaAs cover built therein is in the extreme neighborhood of right above the InP substrate 3 and said cover exerts a large As pressure on the surface of the InP substrate 3 before the crystal growth. A slide board 3 moves toward an arrow A after the start of the growth. The slide board 4 keeps moving while pressing down the holder 5 toward an arrow B. The holder 5 is stopped by a stopper 14 in the position where the InP cover 11 built therein is brought right above the InP substrate 3. The slide board 4 continues to move thereafter and the melt 6 is admitted from a melt inlet 15 into a substrate holding groove 2 where the InP substrate 3 is imposed and housed. Since the GaAs cover 12 is already moved to the side outer than a melt outlet 16 at this time, the contact of the melt 6 melted with the GaAs cover 12 with the InP substrate 3 is obviated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid phase epitaxial growth apparatus for semiconductor devices.

[Prior Art] ff12 (a) and (b) are cross-sectional views showing a conventional liquid phase epitaxial growth apparatus. In this figure, 1 is the boat body, 2 is the substrate holding groove formed in the boat body 1, 3 is the number of lnP bases held in this substrate holding groove 2, and 4 is ? ! The slide boat is equipped with several melt reservoirs 4rL, and each melt I/reservoir 4a accommodates a [nGaA sP crystal growth melt (hereinafter simply referred to as melt) 6. 7 is a piston that pushes out the melt 6, 8 is a piston holder, and 9 is a carbon cover holding jig. A GaAs cover 12 is provided on the cover holding jig 9 on the side opposite to the InP substrate 3. Further, 15 is a melt inlet, and 16 is a melt outlet. Note that arrow A indicates the direction of movement of the slide boat 4.

Next, the operation will be explained.

InP substrate 3. After the melt 6 and the like are all set in the boat body 1 and the slide boat 4, they are put into a quartz reaction tube (not shown) and grown according to a desired growth temperature program while flowing H2 and PH3 gases. Here, the InP substrate 3 is located directly under the carbon cover holding jig 9 that holds the GaAs cover 12 until the InP substrate 3 and the melt 6 come into contact, and the 1nP cover 11 is attached at any time. It is held directly below the cover holder 1o.

The P component evaporated from the InP cover 11 and the P component of the PH3 gas serve to increase the vapor pressure of phosphorus (P) on the surface of the InP substrate 3, thereby preventing thermal decomposition of P on the surface of the InP substrate 3. In addition, GaA in the cover holding jig 9
The arsenic (As) component evaporated from the cover 12 passes through the small hole of the cover holding jig 9, increases the As vapor pressure on the surface of the InP substrate 3, and increases the amount of InP when the InP substrate 3 contacts the melt 6.
It serves to prevent the surface of the P substrate 3 from penetrating into the melt 6.

[Problems to be Solved by the Invention] Since the conventional liquid phase epitaxial growth apparatus is configured as described above, the In'P substrate 3 and the GaAs cover 1
As a result, the As pressure required to sufficiently preserve the uneven shape of the surface of the InP substrate 3 for growth cannot be applied, and AS! Attach the GaAs cover 12 to the cover holder 10 to increase the size of T+ (aA
When the s cover 12 is brought close to the InP substrate 3, the melt 6
When the zaAs cover 12 flows into the melt 6 (melt population 15), the composition changes as the zaAs cover 12 melts into the melt 6, resulting in poor growth.

This invention was made to eliminate the above-mentioned problems, and aims to provide a liquid phase epitaxial growth apparatus that can grow crystals while faithfully preserving the uneven shape of the substrate surface. [Means for Solving the Problems] The liquid phase epitaxial growth apparatus according to the present invention includes a boat body having a substrate holding groove in which a substrate to be crystal grown is tilted and accommodated; I
J function is placed in the substrate holding groove t'-, and the desired melt ti! is placed on the substrate surface. A slide boat having a vi number of melt reservoirs that are in contact with each other, and covers made of a substance that suppresses unnecessary evaporation of the substrate surface immediately before crystal growth and during crystal growth are arranged at predetermined intervals on the surface facing the substrate surface, and The cover holder is provided with a cover holder that moves diagonally downward on the slide boat body as the slide boat moves while maintaining a space serving as a melt passage on the surface of the substrate, and a stopper that stops the cover holder at a predetermined position.

[Effect]

In this invention, since a cover made of a material that suppresses unnecessary evaporation on the substrate surface is provided opposite to the substrate surface immediately before crystal growth and during crystal growth, it is possible to prevent melting with a normal composition.・Crystal growth is performed on the substrate.

〔Example] Hereinafter, an embodiment of the invention of B will be described with reference to FIG.

FIGS. 1(a) and 1(b) are cross-sectional views of a liquid phase epitaxial growth apparatus showing an embodiment of the present invention.
1(b) shows the state before the start of crystal growth, and FIG. 1(b) shows the state after the start of crystal growth.

In FIG. 1, the same reference numerals as in FIG. 2 indicate the same components, and 5 is a movable cover holder that tilts the surface of the 1nP substrate 3#i, and attaches the InP cover 11 to the tilted surface at a predetermined interval. The GaAs cover 12 is placed 17. Also,
Tilt one end of the slide boat 4 in the inclined direction 4a as shown.
By moving the slide boat 4 in the direction of arrow A, the cover holder 5 has its one end 5a in contact with the tilt direction 4a of the slide boat 4, and the slide boat 4
It moves in the direction of arrow Y3, that is, diagonally downward, in a state where it is pushed down as the button moves. 13 is the above In1)
This space serves as a passage for the melt 6 formed on the surface of the substrate 3. 14 is a stopper that stops and supports the movement of the cover holder 5 at a predetermined position. .

Next, the operation will be explained.

As shown in FIG. 1(a), the GaAs cover 12 built into the cover holder 5 is located very close to the top of the InP substrate 3 until the crystal growth flails.
A large As pressure is applied to the surface of the InP substrate 3. After the growth starts, the slide boat 4 moves in the direction of arrow A and pushes down the cover holder 5 in the direction of arrow B.
It is stopped by a stopper 14 at a position directly above the nP substrate 3. Thereafter, as shown in FIG. 1(b), the slide boat 4 continues to move, and the InP substrate 3 is placed in the substrate holding groove 2. - 6 is flowed in from the melt inlet 15. Here, the GaAs cover 12 is already connected to the melt outlet 1.
Since the melt 6 of the GaAs cover 12 is moved outward by 6, the melt 6 that has melted into the GaAs cover 12 does not touch the InP substrate 3.

In the above embodiment, the GaAs cover 12 was used to apply As pressure to the surface of the InP substrate 3, but an nAs cover may also be used and the same effect as in the above embodiment can be obtained.

Further, in the above embodiment, 1nGaAsP is placed on the InP substrate 3.
Although the case of growing a crystal has been shown, it can also be applied to the case of growing an InP crystal on an nGaAsP substrate.

〔Effect of the invention〕

As explained above, this invention does not require tilting the substrate on which crystals are grown. ) At least a boat body is provided with a groove for holding the substrate to be placed and accommodated, and a transfer port is provided on the boat body of B, and the desired melt is brought into contact with the surface of the substrate placed in the groove for holding the substrate. A slide boat having a plurality of melt reservoirs and a cover made of a substance that suppresses unnecessary evaporation on the substrate surface immediately before and during crystal growth are placed at predetermined intervals on the surface facing the substrate surface, and The cover holder is equipped with a cover holder that moves diagonally downward on the slide boat body as the slide boat moves while maintaining a space for the melt passage, and a stopper that stops the cover holder at a predetermined position. After the effect of the melt is applied to the substrate until the growth starts, the cover holder is moved to the outside of the substrate holding groove to prevent the adverse effect of the cover on the melt flowing into the substrate holding groove. be.

[Brief explanation of the drawing]

FIG. 1 (air (b+) is a cross-sectional view of a liquid phase epitaxial growth apparatus showing one embodiment of the present invention, FIG.
b) is a sectional view showing a conventional liquid phase epitaxial growth apparatus. In the figure, 1 is the boat body, 2 is a substrate holding groove, 3 is an InP substrate, 4 is a slide boat, 5 is a movable cover holder, 6 is a Mell-1111 or inP cover, 12 is a GaAs cover, and 13 is a movable cover holder. 14 is a stopper, 15 is a melt inlet, and 16 is a melt 1111. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Procedural amendment (voluntary)

Claims (1)

[Claims] A boat body has a substrate holding groove for tilting and accommodating a substrate to be crystal grown, and a boat body is movably provided on the boat body, and a desired melt is applied to the surface of the substrate placed in the substrate holding groove. a slide boat having a plurality of melt reservoirs brought into contact with each other, and a surface facing the substrate surface,
Immediately before crystal growth and during crystal growth, covers made of a substance that suppresses unnecessary evaporation on the substrate surface are placed at predetermined intervals, and the slide boat is moved as the slide boat moves while maintaining a space on the substrate surface that will serve as a melt passage. a cover holder that moves obliquely downward on the slide boat body;
A liquid phase epitaxial growth apparatus comprising: a stopper for stopping the cover holder at a predetermined position.