JPH01107206A - Manufacture of diffraction grating type polarizing plate - Google Patents

Manufacture of diffraction grating type polarizing plate

Info

Publication number
JPH01107206A
JPH01107206A JP26561787A JP26561787A JPH01107206A JP H01107206 A JPH01107206 A JP H01107206A JP 26561787 A JP26561787 A JP 26561787A JP 26561787 A JP26561787 A JP 26561787A JP H01107206 A JPH01107206 A JP H01107206A
Authority
JP
Japan
Prior art keywords
ion exchange
dielectric film
mask
area
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26561787A
Other languages
Japanese (ja)
Other versions
JP2503538B2 (en
Inventor
Yutaka Urino
豊 賣野
Yoshinori Ota
太田 義徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP26561787A priority Critical patent/JP2503538B2/en
Publication of JPH01107206A publication Critical patent/JPH01107206A/en
Application granted granted Critical
Publication of JP2503538B2 publication Critical patent/JP2503538B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Polarising Elements (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

PURPOSE:To eliminate the need for the process of positioning a photomask and an ion exchange area by depositing a dielectric film on a mask for ion exchange, then dissolving the ion exchange mask and removing a dielectric film at an area where the ion exchange is not performed when forming the thick area and thin area of the dielectric film. CONSTITUTION:The ion exchange mask 2 made of titanium having periodic windows is formed on the main surface of a substrate 1 of a lithium niobate X plate or Y plate and then a proton exchange is made by dipping in benzoic acid to form periodic ion exchange areas 3. Then quartz, etc., is sputtered to deposit the dielectric film 4 and the mask 2 for the ion exchange is dissolved to remove the dielectric 4 in the area where the ion exchange is not performed. Consequently, when the thick area and thin area of the dielectric film 4 are formed, the photomask and ion exchange areas 3 need not be positioned.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はニオブ酸リチウムを用いた複屈折板として、偏
光方向によって回折効率の異なる回折格子型偏光板の製
造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a diffraction grating type polarizing plate, which uses lithium niobate and has a diffraction efficiency that differs depending on the polarization direction.

〔従来の技術〕[Conventional technology]

偏光素子である偏光ビームスプリッタは、直交する偏光
間で光の伝搬方向を異ならせることによって特定の偏光
を得る素子である。この偏光素子は、光フアイバ通信用
光源モジュールや光デイスク用光ヘッドなどに光アイソ
レータや光サーキュレータを構成する部品として使われ
ている。
A polarizing beam splitter, which is a polarizing element, is an element that obtains a specific polarized light by changing the propagation direction of light between orthogonal polarized lights. This polarizing element is used as a component of optical isolators and optical circulators in light source modules for optical fiber communications, optical heads for optical disks, and the like.

従来の偏光ビームスプリッタとしては、グラントムソン
プリズムやロッションプリズム等、複屈折の大きい結晶
の光反射面における偏光による透過ないしは全反射の違
いを利用し光路を分離するもの、またはガラス等の等方
性光学媒質でできた全反射プリズム反射面に誘電体多層
膜を設け、この誘電体多層膜の偏光による屈折率の違い
を利用して、光を全反射ないしは透過させるものが多く
使用されている。しかしながら、これらの素子は大型で
あること、生産性が低いこと、値段が高いことなどの欠
点がある。
Conventional polarizing beam splitters include Glan-Thompson prisms and Rochon prisms that separate optical paths by utilizing the difference in transmission or total reflection due to polarization on the light reflecting surface of a crystal with large birefringence, or isotropic beam splitters such as glass. A total reflection prism made of a reflective optical medium has a dielectric multilayer film on its reflective surface, and the difference in refractive index due to the polarization of this dielectric multilayer film is used to completely reflect or transmit light. . However, these devices have drawbacks such as large size, low productivity, and high cost.

回折格子型偏光板は、ニオブ酸リチウムなどの光学的異
方性をもつ結晶の主面に周期的なイオン交換領域を設け
、かつその主面上にイオン交換を施した領域では厚くイ
オン交換を施していない領域では薄く誘電体膜を形成し
たものであり、偏光による回折効率の違いを利用し光路
を分離するものである。この回折格子型偏光板は従来の
偏光素子に比べて、小型であること、生産性が高いこと
、安価であることなどの利点がある。例えば、ニオブ酸
リチウムのX板またはY板の主面に周囲的にプロトン交
換を施すと、プロトン交換を施した領域では異常光に対
する屈折率が約0813増加し、常光に対する屈折率が
約0.04減少する。したがって、プロトン交換を施し
た領域の誘電体膜厚をプロトン交換を施していない領域
の誘電体膜厚に比べて厚くし、プロトン交換を施した領
域の常光線に対する屈折率の減少を相殺することによっ
て常光線の1次以上回折効率および異常光線の0次の回
折効率を共に零にするqとができる。
A diffraction grating type polarizing plate has periodic ion exchange regions on the main surface of a crystal with optical anisotropy, such as lithium niobate, and thick ion exchange regions on the main surface. A thin dielectric film is formed in areas where no polarization is applied, and optical paths are separated by utilizing differences in diffraction efficiency due to polarization. This diffraction grating type polarizing plate has advantages over conventional polarizing elements, such as being smaller, having higher productivity, and being cheaper. For example, when proton exchange is performed around the main surface of an X plate or a Y plate of lithium niobate, the refractive index for extraordinary light increases by about 0.813 in the proton exchanged region, and the refractive index for ordinary light increases by about 0.813. 04 decrease. Therefore, the dielectric film thickness in the proton-exchanged region is made thicker than the dielectric film thickness in the non-proton-exchanged region to offset the decrease in the refractive index for ordinary rays in the proton-exchanged region. By this, it is possible to reduce both the first-order or higher-order diffraction efficiency of ordinary rays and the zero-order diffraction efficiency of extraordinary rays to zero.

従来、この誘電体膜を形成する際には、イオン交換領域
ド2図(a)〜(h)または第3図(a)〜(h)に示
すような工程が用いられていた。すなわち、第2図では
、ニオブ酸リチウムのX板またはY板基板1の主面上に
チタンなどで周期的な窓を持つイオン交換用マスク2を
形成し、249℃程度の安息香酸に数時間浸漬すること
によって、周期的なイオン交換領域3を形成する(第2
図(a))。その後酸などによってイオン交換用マスク
2を溶解除去しく第2図(b))、スパッタリングなど
によって誘電体膜4を堆積しく第2図(C))、ホトレ
ジスト6を塗布しく第2図(d))、ホトマスク7をイ
オン交換領域3と位置合わせした後に露光しく第2図(
e))、現像しく第2図(f))、誘電体膜4をエツチ
ングしく第2図(g))、最後にホトレジスト6を除去
して回折格子型偏光板が得られる(第2図(h))。
Conventionally, when forming this dielectric film, steps such as those shown in FIGS. 2(a) to 3(h) or 3(a) to 3(h) have been used for the ion exchange region. That is, in FIG. 2, an ion exchange mask 2 having periodic windows is formed of titanium or the like on the main surface of an X-plate or Y-plate substrate 1 made of lithium niobate, and is soaked in benzoic acid at about 249°C for several hours. By dipping, a periodic ion exchange region 3 is formed (second
Figure (a)). After that, the ion exchange mask 2 is dissolved and removed using acid or the like (Fig. 2(b)), the dielectric film 4 is deposited by sputtering etc. (Fig. 2(C)), and the photoresist 6 is applied (Fig. 2(d)). ), and after aligning the photomask 7 with the ion exchange region 3, the exposure is performed as shown in FIG.
e)), developing the dielectric film 4 (FIG. 2(f)), etching the dielectric film 4 (FIG. 2(g)), and finally removing the photoresist 6 to obtain a diffraction grating type polarizing plate (FIG. 2(g)). h)).

また、第3図においては第3図(b)までは第2図(b
)と同じであるが、その後ホトレジスト6を塗布し、(
第3図(c))、ホトマスク7をイオン交換領域3と位
置合わせした後に露光しく第3図(d)) 、現像した
後に(第3図(e))、スパッタリングなどによって誘
電体膜4を堆積しく第3図(f))、ホトレジスト6を
溶解除去しく第3図(g)) 、必要に応じて誘電体膜
5を堆積することによって回折格子型偏光子が得られる
(第3図(h))。
In addition, in Figure 3, up to Figure 3 (b) is shown in Figure 2 (b).
), but then photoresist 6 is applied, and (
After aligning the photomask 7 with the ion exchange region 3, exposing it to light (FIG. 3(d)) and developing it (FIG. 3(e)), the dielectric film 4 is formed by sputtering or the like. The photoresist 6 is deposited (FIG. 3(f)), the photoresist 6 is dissolved and removed (FIG. 3(g)), and a dielectric film 5 is deposited as necessary to obtain a diffraction grating type polarizer (FIG. 3(g)). h)).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、これら各製造方法はいずれも製造工程が
複雑であり、特に第2図(e)または第3図(d)に示
したように、ホトマスク7とイオン交換領域3との位置
合わせ工程が必要であり、このことが回折格子型偏光板
の歩留りの低下や品質のばらつきの原因となっていた。
However, each of these manufacturing methods requires a complicated manufacturing process, and in particular requires an alignment process between the photomask 7 and the ion exchange region 3, as shown in FIG. 2(e) or FIG. 3(d). This has caused a decrease in yield and variations in quality of diffraction grating type polarizing plates.

本発明の目的は、このような問題を解決し、位置合わせ
工程を除去することによって、製造工程を簡素化し、歩
留りを向上させ、高品質の回折格子型偏光板を大量安価
に製造可能とした回折格子型偏光板の製造方法を提供す
ることにある。
The purpose of the present invention is to solve these problems, simplify the manufacturing process, improve yield, and make it possible to manufacture high-quality diffraction grating type polarizing plates in large quantities at low cost by eliminating the alignment process. An object of the present invention is to provide a method for manufacturing a diffraction grating type polarizing plate.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の回折格子型偏光板の製造方法は、ニオブ酸リチ
ウム結晶板の主面に、所定同期で選択的にイオン交換領
域を形成するためのイオン交換用マスクを形成する第1
の工程と、前記主面上に前記同期でイオン交換領域を形
成する第2の工程と、前記主面上にイオン交換を施した
領域では厚く、イオン交換を施していない領域では薄く
誘電体膜を形成する第3の工程とを具備し、前記誘電体
膜の厚い領域とその薄い領域を形成する際に、前記イオ
ン交換用マスク上に前記誘電体膜を堆積した後、このイ
オン交換用マスクを溶解してイオン交換を施していない
領域の誘電体膜を除去させる工程を含むことを特徴とす
る。
The method for manufacturing a diffraction grating type polarizing plate of the present invention includes a first step in which an ion exchange mask is formed on the main surface of a lithium niobate crystal plate to selectively form ion exchange regions in predetermined synchronization.
a second step of forming an ion exchange region on the main surface at the same time; and a second step of forming an ion exchange region on the main surface in a thick manner in the ion exchanged region and a thin dielectric film in the non-ion exchanged region. and a third step of forming a thick region of the dielectric film and a thin region thereof, after depositing the dielectric film on the ion exchange mask, the ion exchange mask is The method is characterized in that it includes a step of dissolving the dielectric film and removing the dielectric film in the area where ion exchange has not been performed.

〔実施例〕 以下、本発明を図面を参照して詳細に説明する。〔Example〕 Hereinafter, the present invention will be explained in detail with reference to the drawings.

第11図(a)〜(e)は本発明の一実施例の回折格子
型偏光板の製造方法を工程順に説明した断面図である。
FIGS. 11(a) to 11(e) are cross-sectional views illustrating a method for manufacturing a diffraction grating type polarizing plate according to an embodiment of the present invention in the order of steps.

すなわち、まずニオブ酸リチウムのX板またはY板の基
板1の主面上に、通常のリフトオフ法などを用いてチタ
ンなどの周期的な窓を持つイオン交換用マスク2を作成
する(第1図(a))。なお、このマスク2の膜厚は、
後に形成する誘電体膜4の膜厚より厚くするために30
00〜4000人にする。その後、249℃程度の安息
香酸に4時間程度浸漬するなどの方法でプロトン交換を
行って、深さ4.6μm程度の周期的なイオン交換領域
3を形成するく第1図(b))。その後、スパッタリン
グなどを用いて石英など誘電体膜4を厚さ1270人程
度堆積させ(第1図(C))、イオン交換用のマスク2
を溶解することによってイオン交換を施していない領域
の誘電体4を除去する(第1図(d))。最後に必要に
応じて適当な誘電体膜5をスパッタリングなどを用いて
堆積させる(第1図(e))。
That is, first, an ion exchange mask 2 having periodic windows made of titanium or the like is created on the main surface of the substrate 1, which is an X plate or a Y plate of lithium niobate, using a normal lift-off method or the like (see Fig. 1). (a)). The film thickness of this mask 2 is
30 to make it thicker than the dielectric film 4 to be formed later.
00 to 4000 people. Thereafter, proton exchange is performed by immersion in benzoic acid at about 249° C. for about 4 hours to form periodic ion exchange regions 3 with a depth of about 4.6 μm (FIG. 1(b)). Thereafter, a dielectric film 4 such as quartz is deposited to a thickness of about 1,270 layers using sputtering or the like (FIG. 1(C)), and a mask 2 for ion exchange is deposited.
The dielectric material 4 in the area where ion exchange has not been performed is removed by dissolving the dielectric material 4 (FIG. 1(d)). Finally, if necessary, a suitable dielectric film 5 is deposited by sputtering or the like (FIG. 1(e)).

この誘電体膜5は、屈折率と膜厚を適当に選ぶことによ
って、無反射膜にすることができる。
This dielectric film 5 can be made into a non-reflective film by appropriately selecting the refractive index and film thickness.

この製造方法は、従来の製造方法に比べて製造工程を約
半分に減少させることができ、特に誘電体膜4の厚い領
域と薄い領域を形成する際に、ホ゛ ト7スク7とイオ
ン交換領域3との位置合わせが不要になるため、製品の
ばらつきを小さくすることができ、高い歩留りと低い製
造コストが得られる。
This manufacturing method can reduce the manufacturing steps by about half compared to conventional manufacturing methods, and is particularly effective when forming the thick and thin regions of the dielectric film 4. Since positioning with 3 is no longer necessary, product variations can be reduced, resulting in high yield and low manufacturing cost.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、回折格子型偏光板
の製造工程を簡素化することができ、品質の良い偏光素
子を大量安価に製造することができる。
As explained above, according to the present invention, the manufacturing process of a diffraction grating type polarizing plate can be simplified, and high quality polarizing elements can be manufactured in large quantities at low cost.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)〜(e)は本発明の製造方法を工程順に説
明した素子の断面図、第2図(a)〜(h)、第3図(
a)〜(h)は従来の回折格子型偏光板の製造方法の二
側を工程順に説明した断面図である。 1・・・ニオブ酸リチウム基板、2・・・イオン交換用
マスク、3・・・イオン交換領域、4・・・誘電体膜、
5・・・誘電体膜、6・・・ホトレジスト、7・・・ホ
トマスク。
FIGS. 1(a) to (e) are cross-sectional views of an element explaining the manufacturing method of the present invention in the order of steps, FIGS. 2(a) to (h), and FIG.
a) to (h) are cross-sectional views illustrating two sides of a conventional method for manufacturing a diffraction grating type polarizing plate in order of steps; DESCRIPTION OF SYMBOLS 1... Lithium niobate substrate, 2... Ion exchange mask, 3... Ion exchange region, 4... Dielectric film,
5... Dielectric film, 6... Photoresist, 7... Photomask.

Claims (1)

【特許請求の範囲】[Claims] ニオブ酸リチウム結晶板の主面に、所定同期で選択的に
イオン交換領域を形成するためのイオン交換用マスクを
形成する第1の工程と、前記主面上に前記同期でイオン
交換領域を形成する第2の工程と、前記主面上にイオン
交換を施した領域では厚く、イオン交換を施していない
領域では薄く誘電体膜を形成する第3の工程とを具備し
、前記誘電体膜の厚い領域とその薄い領域を形成する際
に、前記イオン交換用マスク上に前記誘電体膜を堆積し
た後、このイオン交換用マスクを溶解してイオン交換を
施していない領域の誘電体膜を除去させる工程を含むこ
とを特徴とする回折格子型偏光板の製造方法。
A first step of forming an ion exchange mask for selectively forming an ion exchange region in a predetermined synchronization on the main surface of a lithium niobate crystal plate, and forming an ion exchange region on the main surface in the synchronization. and a third step of forming a dielectric film on the main surface to be thick in areas where ion exchange has been performed and thin in areas where ion exchange has not been performed. When forming a thick region and its thin region, after depositing the dielectric film on the ion exchange mask, the ion exchange mask is dissolved to remove the dielectric film in the region where ion exchange is not performed. A method for manufacturing a diffraction grating type polarizing plate, comprising the step of:
JP26561787A 1987-10-20 1987-10-20 Method for manufacturing diffraction grating type polarizing plate Expired - Fee Related JP2503538B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26561787A JP2503538B2 (en) 1987-10-20 1987-10-20 Method for manufacturing diffraction grating type polarizing plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26561787A JP2503538B2 (en) 1987-10-20 1987-10-20 Method for manufacturing diffraction grating type polarizing plate

Publications (2)

Publication Number Publication Date
JPH01107206A true JPH01107206A (en) 1989-04-25
JP2503538B2 JP2503538B2 (en) 1996-06-05

Family

ID=17419621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26561787A Expired - Fee Related JP2503538B2 (en) 1987-10-20 1987-10-20 Method for manufacturing diffraction grating type polarizing plate

Country Status (1)

Country Link
JP (1) JP2503538B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349144A2 (en) * 1988-06-29 1990-01-03 Nec Corporation Birefringence diffraction grating type polarizer
US5029988A (en) * 1988-06-29 1991-07-09 Nec Corporation Birefringence diffraction grating type polarizer
EP0565381A2 (en) * 1992-04-08 1993-10-13 Matsushita Electric Industrial Co., Ltd. Optical element and method of fabricating the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349144A2 (en) * 1988-06-29 1990-01-03 Nec Corporation Birefringence diffraction grating type polarizer
EP0349144A3 (en) * 1988-06-29 1991-05-29 Nec Corporation Birefringence diffraction grating type polarizer
US5029988A (en) * 1988-06-29 1991-07-09 Nec Corporation Birefringence diffraction grating type polarizer
EP0565381A2 (en) * 1992-04-08 1993-10-13 Matsushita Electric Industrial Co., Ltd. Optical element and method of fabricating the same
EP0565381A3 (en) * 1992-04-08 1993-12-01 Matsushita Electric Ind Co Ltd Optical element and method of fabricating the same
US5367403A (en) * 1992-04-08 1994-11-22 Matsushita Electric Industrial Co., Ltd. Optical element and method of fabricating the same
US5455712A (en) * 1992-04-08 1995-10-03 Matsushita Electric Industrial Co., Ltd. Optical element and method of fabricating the same

Also Published As

Publication number Publication date
JP2503538B2 (en) 1996-06-05

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