JPH01106474A - Manufacture of photo transistor - Google Patents
Manufacture of photo transistorInfo
- Publication number
- JPH01106474A JPH01106474A JP62262671A JP26267187A JPH01106474A JP H01106474 A JPH01106474 A JP H01106474A JP 62262671 A JP62262671 A JP 62262671A JP 26267187 A JP26267187 A JP 26267187A JP H01106474 A JPH01106474 A JP H01106474A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- area
- diffusion
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 3
- 238000000206 photolithography Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
・ 〔産業上の利用分野〕
この発明は、受光領域におけるベース拡散の浅いフォト
トランジスタの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a phototransistor with shallow base diffusion in a light receiving region.
第２図にフォトトランジスタの基本構造を示す。 Figure 2 shows the basic structure of a phototransistor.
図において１は一基板、２はＮエピタキシャル層、３は
５１０２膜、４はＰ拡散層、５はＮ拡散層、６゜７は電
極、８は光である。In the figure, 1 is a substrate, 2 is an N epitaxial layer, 3 is a 5102 film, 4 is a P diffusion layer, 5 is an N diffusion layer, 6.7 is an electrode, and 8 is a light.
Ｎエピタキシャル層２がコレクタ領域、Ｐ拡散層４がベ
ース領域、Ｎ拡散層４がエミッタ領域となる。The N epitaxial layer 2 serves as a collector region, the P diffusion layer 4 serves as a base region, and the N diffusion layer 4 serves as an emitter region.
通常、フォトトランジスタは、感度アップのために、ベ
ース領域のＰ拡散層４を浅くする必要がある。ただ、こ
の場合も、コンタクト領域の拡散層はある値以上の深さ
を必要とする。Normally, in a phototransistor, it is necessary to make the P diffusion layer 4 in the base region shallow in order to increase sensitivity. However, in this case as well, the depth of the diffusion layer in the contact region is required to exceed a certain value.
第３図に従来のフォトトランジスタの製造方法における
ベース領域の形成法の一例を示す。FIG. 3 shows an example of a method for forming a base region in a conventional method for manufacturing a phototransistor.
Ｗ板１上に成長させたＮエピタキシャル層２表面にＳ
ｉＯ２膜３を形成しＣ１５４（ａ） ）、該Ｓ １０２
膜３に写真蝕刻法によりベース領域のコンタクト領域と
が一ドリング領域に対応する窓を開け〔−６〕〕、該窓
からＢ（硼素）を拡散で導入しＰ拡散層４を形成する〔
図（Ｃ）〕。S on the surface of the N epitaxial layer 2 grown on the W plate 1.
Form an iO2 film 3, C154(a)), and S102
A window corresponding to the contact region of the base region and the idling region is opened in the film 3 by photolithography [-6]], and B (boron) is introduced by diffusion through the window to form the P diffusion layer 4 [
Figure (C)].
形成したＰ拡散層４をドライブインによって赫ぐし〔図
（ｄ）〕、基板面上の成長したＳｉＯ膜３に写真蝕刻法
によりベース領域の受光領域に対応する窓を開け〔図（
ｅ）〕、該窓からＢを拡散で導入し、浅いＰ拡散層４を
形成し〔図（ｆ） ） 、該Ｐ拡散層４をドライブイン
する〔図（ｇ）〕。The formed P diffusion layer 4 is exposed by a drive-in method [Figure (d)], and a window corresponding to the light-receiving area of the base area is made by photolithography on the grown SiO film 3 on the substrate surface [Figure (d)].
e)], B is introduced by diffusion through the window to form a shallow P diffusion layer 4 [Figure (f))], and the P diffusion layer 4 is driven in [Figure (g)].
ベース領域の形成が終わると、成長したＳ ｉｏ ２膜
３にエミッタ領域に対応する窓を開け〔図６）〕、エミ
ッタ領域のＮ拡散層５を形成する。After the formation of the base region is completed, a window corresponding to the emitter region is opened in the grown S io 2 film 3 (FIG. 6), and an N diffusion layer 5 in the emitter region is formed.
従来のフォトトランジスタの製造方法では、ベース領域
の形成が、Ｐ拡散を深くする必要のあるコンタクト領域
の拡散と、Ｐ拡散を浅くする受光領域の拡散を別々に実
施しておシ、２回の拡散工程を要するという問題があっ
た。In conventional phototransistor manufacturing methods, the formation of the base region is performed twice: diffusion of the contact region, which requires deep P diffusion, and diffusion of the light-receiving region, which requires shallow P diffusion. There was a problem that a diffusion process was required.
この発明は上記の事情に鑑みてなされたもので、１回の
拡散で、受光領域が浅くコンタクト領域の深い拡散層か
らなるベース領域の形成法を、提供することを目的とす
る。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a method of forming a base region having a shallow light-receiving region and a deep diffusion layer in a contact region by one diffusion.
この発明の方法は、Ｐ拡散後、ＣＶＤ （Ｃｈｅｍｉｃ
ａｔＶａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）法によりＰ拡
散領域表面にＣＶＤ膜を形成し、該ＣＶＤ膜の一部をエ
ッチオフすると、エッチオフした領域の表面Ｐ濃度が低
下し、ドライブインすると、深い拡散層と浅い拡散層−
が同時にできることを利用して、１回の拡散によりてベ
ース領域を形成する方法である。In the method of this invention, after P diffusion, CVD (Chemical
When a CVD film is formed on the surface of the P diffusion region by the at Vapor Deposition method and a part of the CVD film is etched off, the surface P concentration of the etched off region decreases, and when driven in, a deep diffusion layer and a shallow diffusion layer are formed. −
In this method, the base region is formed by one diffusion, taking advantage of the fact that both can be performed at the same time.
第１図にこの発明のフォトトランジスタの製造方法にお
けるベース領域の形成法の一例を示す。FIG. 1 shows an example of a method for forming a base region in the method for manufacturing a phototransistor of the present invention.
Ｎ子基板１上に成長させたＮエピタキシャル層２表面に
Ｓ ｉ０２膜３を形成し〔図（、） ｍｌ 、該Ｓ １
０２膜３に写真蝕刻法により受光領域、コンタクト領域
及びガードリング領域を含むベース全領域に対応する窓
を開け（ＩＷ（ｂ））、該窓からＢ（硼素）を拡散で導
入しＰ拡散層４を形成する〔図（Ｃ）〕。A Si02 film 3 was formed on the surface of the N epitaxial layer 2 grown on the N-substrate 1 [Fig.
A window corresponding to the entire base area including the light receiving area, contact area and guard ring area is opened in the 02 film 3 by photolithography (IW(b)), and B (boron) is introduced through the window by diffusion to form a P diffusion layer. 4 [Figure (C)].
次に、基板表面にＣＶＤ法によ、６ ＣＶＤ膜１３を形
成し〔図（ｄ）〕、写真蝕刻法により形成したＣｖＤ膜
１３のベース領域の受光領域に対応する部分を除去し〔
図（ｅ）〕、Ｐ拡散層４をドライブインする〔図（ｆ）
〕
この際、Ｐ拡散層４のＣＶＴ）膜１３を除去した部分の
表面Ｐ濃度は低下するので、ドライブインによりて、受
光領域以外のＰ拡散層４が深くなっても、受光領域が深
くならず、所望の構造のＰ拡散層４が得られる。Next, a CVD film 13 is formed on the substrate surface by the CVD method [Figure (d)], and a portion of the base region of the CVD film 13 formed by the photolithography method corresponding to the light receiving area is removed [
Figure (e)], driving in the P diffusion layer 4 [Figure (f)
] At this time, the surface P concentration of the portion of the P diffusion layer 4 from which the CVT film 13 has been removed decreases, so even if the P diffusion layer 4 other than the light receiving area becomes deeper due to drive-in, the light receiving area does not become deeper. First, a P diffusion layer 4 having a desired structure is obtained.
ベース領域形成終了後のエミッタ領域に対する窓開け〔
図（ｇ）〕などは、従来と同様の方法で行なえる。Opening a window for the emitter region after forming the base region [
Figure (g)] etc. can be performed in the same manner as in the conventional method.
以上のとお）、この発明によれば、ベース拡散が１回の
拡散ですむことになシ、工程が短縮され、コスト低減に
寄与する効果が大である。As described above, according to the present invention, the base diffusion only needs to be done once, which shortens the process and greatly contributes to cost reduction.
第１図はこの発明のフォトトランジスタの製造方法にお
けるベース領域の形成法の一例を示す説明図、第２図は
フォトトランジスタの基本構造を示す説明図、第３因は
従来のフォ））ランジスタの製造方法におけるベース領
域の形成法の一例を示す説明図である。
１・・−Ｗ板、２−Ｎエピタキシャル層、３・・・Ｓ
ｉｏ２膜、４−Ｐ拡散層、１３−ＣＶＤ膜なお各図中同
一符号は同一または相当する部分を示す。
特許出願人 新日本無線株式会社
第１図
第２図FIG. 1 is an explanatory diagram showing an example of the method of forming a base region in the method of manufacturing a phototransistor of the present invention, FIG. 2 is an explanatory diagram showing the basic structure of a phototransistor, and the third factor is a conventional transistor. It is an explanatory view showing an example of a method of forming a base region in a manufacturing method. 1...-W plate, 2-N epitaxial layer, 3...S
io2 film, 4-P diffusion layer, and 13-CVD film. In each figure, the same reference numerals indicate the same or corresponding parts. Patent applicant New Japan Radio Co., Ltd. Figure 1 Figure 2
Claims (1)
タの製造方法において、Ｎ＾＋基板上に成長させたＮエ
ピタキシャル層表面にＳｉＯ＿２膜を形成し、該ＳｉＯ
＿２膜に写真蝕刻法により受光領域、コンタクト領域及
びガードリング領域を含むベース全領域に対応する窓を
開け、該窓からＢ（硼素）を拡散で導入し、Ｐ拡散層を
形成する工程、ベース全領域にＰ拡散層を形成した基板
表面にＣＶＤ法によりＣＶＤ膜を形成し、写真蝕刻法に
より上記ＣＶＤ膜のベース領域の受光領域に対応する部
分を除去し、ベース全領域に形成した上記Ｐ拡散層をド
ライブインする工程を備えたことを特徴とするフォトト
ランジスタの製造方法。In a method for manufacturing a phototransistor with shallow base diffusion in the light-receiving region, an SiO_2 film is formed on the surface of an N epitaxial layer grown on an N^+ substrate, and the SiO
Step of forming a P diffusion layer by opening a window corresponding to the entire base area including the light-receiving area, contact area and guard ring area in the _2 film by photolithography, and introducing B (boron) through the window by diffusion. A CVD film is formed by the CVD method on the surface of the substrate on which a P diffusion layer is formed over the entire region, and a portion of the base region of the CVD film corresponding to the light-receiving region is removed by photolithography. A method for manufacturing a phototransistor, comprising a step of driving in a diffusion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262671A JPH01106474A (en) | 1987-10-20 | 1987-10-20 | Manufacture of photo transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262671A JPH01106474A (en) | 1987-10-20 | 1987-10-20 | Manufacture of photo transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01106474A true JPH01106474A (en) | 1989-04-24 |
Family
ID=17378984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62262671A Pending JPH01106474A (en) | 1987-10-20 | 1987-10-20 | Manufacture of photo transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01106474A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100700914B1 (en) * | 2006-02-21 | 2007-03-28 | 한국전자통신연구원 | Bipolar Phototransistor and Fabrication Process Method Thereof |
-
1987
- 1987-10-20 JP JP62262671A patent/JPH01106474A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100700914B1 (en) * | 2006-02-21 | 2007-03-28 | 한국전자통신연구원 | Bipolar Phototransistor and Fabrication Process Method Thereof |
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