JPH01105757A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPH01105757A JPH01105757A JP62122503A JP12250387A JPH01105757A JP H01105757 A JPH01105757 A JP H01105757A JP 62122503 A JP62122503 A JP 62122503A JP 12250387 A JP12250387 A JP 12250387A JP H01105757 A JPH01105757 A JP H01105757A
- Authority
- JP
- Japan
- Prior art keywords
- thermal head
- substrate
- layer
- base
- head according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 21
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 9
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 5
- 229910000640 Fe alloy Inorganic materials 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 16
- 229910052596 spinel Inorganic materials 0.000 claims description 5
- 239000011029 spinel Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 229920006015 heat resistant resin Polymers 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 55
- 238000007639 printing Methods 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000005764 inhibitory process Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 37
- 239000004642 Polyimide Substances 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910017060 Fe Cr Inorganic materials 0.000 description 4
- 229910002544 Fe-Cr Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(発明の目的〕
(産業上の利用分野)
本発明は、サーマルヘッドに係り、特にその基体に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Objective of the Invention) (Industrial Application Field) The present invention relates to a thermal head, and particularly to a substrate thereof.
(従来の技術)
近年、サーマルヘッドは、ファクシミリ、プリンター、
ワードプロセッサ等の記録装置等に用いられ、その用途
は非常に広い。(Prior art) In recent years, thermal heads have been used in facsimiles, printers,
It is used in recording devices such as word processors, and has a wide range of uses.
一般に、サーマルヘッドでは、高抵抗基体としてAl1
20sの純度が90%以上のセラミック基板が多用され
ている。しかしながら、このセラミック基板を形成する
際に、原料粉末よりアルカリ金属成分を除去する工程、
高温焼成、この高温焼成時に生じた基板のうねり等を除
去するため等の仕上げの研摩等の工程が必要となるため
、コストの上昇が避けられない。また、サーマルヘッド
は、個別電極と共通電極との間に設けられた発熱抵抗体
に電流を流し、発熱抵抗体をジュール加熱して発熱させ
、感熱紙等に記録を行っている。ところで、上述の如く
セラミック基板を用いたサーマルヘッドでは、基板全体
が高抵抗であるため、共通電極を個別に基板表面上に形
成する必要が必る。Generally, in thermal heads, Al1 is used as a high resistance substrate.
Ceramic substrates with a purity of 20s of 90% or more are often used. However, when forming this ceramic substrate, a process of removing alkali metal components from the raw material powder,
Since high-temperature firing and finishing steps such as polishing to remove undulations and the like of the substrate generated during the high-temperature firing are required, an increase in cost is unavoidable. Further, the thermal head performs recording on thermal paper or the like by passing a current through a heating resistor provided between an individual electrode and a common electrode, heating the heating resistor by Joule heating, and generating heat. By the way, in a thermal head using a ceramic substrate as described above, since the entire substrate has a high resistance, it is necessary to form a common electrode individually on the surface of the substrate.
これらは、現在小型でかつ低価格のサーマルヘッドを模
索中の産業界の動向に反することとなる。These go against the current trend in the industry, which is searching for smaller and lower cost thermal heads.
(発明が解決しようとする問題点)
本発明は、上述の問題点に鑑みてなされたものであり、
印字性能のはれた小型でしかも低価格のサーマルヘッド
を提供することを目的とする。(Problems to be solved by the invention) The present invention has been made in view of the above-mentioned problems,
The purpose is to provide a small, low-cost thermal head with excellent printing performance.
(問題点を解決するための手段)
上述の目的を達成するために、本発明のサーマルヘッド
は、高抵抗基体が、Qrを実質的に5重量%乃至30重
屋%と、ACSi、sc、 Ti。(Means for Solving the Problems) In order to achieve the above-mentioned object, the thermal head of the present invention includes a high-resistance substrate containing Qr of substantially 5% to 30% by weight, ACSi, sc, Ti.
V、Y、Zr、Nb、l−a、1−1fの群から選択さ
れた少なくとも1つを実質的に0.05重凶%乃至5重
量%含有する鉄系合金からなるものである。It is made of an iron-based alloy containing substantially 0.05% to 5% by weight of at least one selected from the group of V, Y, Zr, Nb, 1-a, and 1-1f.
その実PM態様としてガラスあるいは耐熱樹脂からなる
高抵抗体層を配置してなることを特徴とする。The actual PM mode is characterized in that a high-resistance layer made of glass or heat-resistant resin is disposed.
(作 用)
本発明のサーマルヘッドは、セラミック基板を用いない
ため、第1に基板を共通電極として使用でき、第2にセ
ラミック基板形成時のアルカリ金属を除去する工程やう
ねりを除去する工程が不用となる効果がある。(Function) Since the thermal head of the present invention does not use a ceramic substrate, firstly, the substrate can be used as a common electrode, and secondly, the step of removing alkali metal and the step of removing waviness during the formation of the ceramic substrate can be avoided. It has the effect of making it unnecessary.
ざらに、本発明のサーマルヘッドの実施態様では、第1
に基体の添加元素の適切な選択により基体とこの基体上
に設けられた高抵抗体層との接着性に滞れ、第2に高抵
抗体層に耐熱樹脂を用いることにより、曲げ加工が可能
となる。Roughly speaking, in an embodiment of the thermal head of the present invention, the first
Second, by appropriately selecting the additive elements of the base material, the adhesion between the base material and the high-resistance layer provided on the base material can be improved, and secondly, by using heat-resistant resin for the high-resistance layer, bending is possible. becomes.
(実施例)
以下、本発明のサーマルヘッドの一実施例を第1図(2
)および第1図0を参照して説明する、なお、第1図(
2)は平型サーマルヘッドの模式図、第1図υは第1図
(4)の要部断面簡略図を示す。(Embodiment) An embodiment of the thermal head of the present invention will be described below as shown in Fig. 1 (2).
) and FIG. 10, and FIG. 1(
2) is a schematic diagram of a flat thermal head, and FIG. 1 υ is a simplified sectional view of the main part of FIG. 1 (4).
第1図(4)において、サーマルヘッドωは、アルミニ
ウムからなる放熱基板■上にドライバ基板(3)と抵抗
基板(4)とが接着部材(図示せず)を介し7て載置固
定されている。In FIG. 1 (4), the thermal head ω includes a driver board (3) and a resistor board (4) placed and fixed on a heat dissipating board (7) made of aluminum via an adhesive member (not shown). There is.
ドライバ基板■上には、駆動用7C5)がe置され、こ
の駆動用IC■へ信号電流等を入力する導体配線■がボ
ンディングワイヤ■を介して電気的に接続されている。A driving 7C5) is placed on the driver board (2), and a conductor wiring (2) for inputting a signal current, etc. to the driving IC (2) is electrically connected via a bonding wire (2).
一方、抵抗基板(イ)上には、個別リード(8)が駆動
用IC■とボンディングワイヤ(9)を介して電気的に
接続されている。この個別リード(8)の先端には発熱
抵抗体q0が電気的に接続し、この発熱抵抗体0Φの他
端は抵抗基板(4)と電気的に接続している。On the other hand, on the resistance substrate (a), individual leads (8) are electrically connected to the driving IC (2) via bonding wires (9). A heating resistor q0 is electrically connected to the tip of this individual lead (8), and the other end of this heating resistor 0Φ is electrically connected to the resistance board (4).
なお、(ハ)は、発熱抵抗体QOを保護する保護層であ
る。Note that (c) is a protective layer that protects the heating resistor QO.
次に、第1図υを参照して、抵抗基板(イ)を詳細に説
明する。第1図(ハ)において、高抵抗基板00はFe
−1511%の0r−4重量%のi−0,2重量%のT
iからなる板厚0.75#の金属基板0と、この金属基
板■上に形成されているPbO161ff1%、S i
O2513重1%、An 20s 91p%、820
34重量%、C(10)3重量%、その他Bad、Cr
z03.N fOを含むガラス層からなる高抵抗体層C
力とから形成されている。この金属基板0と高抵抗体層
Oツとの界面には、金属基板0と高抵抗体層03)との
密着性を良好にするため高抵抗体層C[F]の形成前に
金a基板■の構成成分からなる酸化物−(ロ)、本実施
例の場合にはAJ2203゜AJ2TizO5からなる
ち密な酸化物が形成されている。このように必らかしめ
金属基板表面に酸化物層が存在するとガラスとの密着性
がよくなるのは金属基体表面の表面酸化物は、ガラス層
形成時高温のガラスに接すると表面からガラスの中へ溶
は込み、またガラスは酸化物の中へ溶は込んで両者の混
り合った中間温が生成されるためである。Next, the resistor substrate (a) will be explained in detail with reference to FIG. 1 υ. In FIG. 1(c), the high resistance substrate 00 is made of Fe.
- 1511% 0r - 4% by weight i - 0,2% by weight T
A metal substrate 0 with a thickness of 0.75 # consisting of i, PbO161ff1%, Si formed on this metal substrate ■
O2513 weight 1%, An 20s 91p%, 820
34% by weight, C(10) 3% by weight, others Bad, Cr
z03. High-resistance layer C made of a glass layer containing NfO
It is formed from force. In order to improve the adhesion between the metal substrate 0 and the high-resistance layer 03), gold a is added to the interface between the metal substrate 0 and the high-resistance layer 03) before forming the high-resistance layer C[F]. The oxide (b) consisting of the constituent components of the substrate (2) is a dense oxide consisting of AJ2203°AJ2TizO5 in the case of this embodiment. In this way, the presence of an oxide layer on the surface of the caulked metal substrate improves its adhesion to the glass.The reason why the surface oxide on the surface of the metal substrate flows from the surface into the glass when it comes into contact with high-temperature glass during the formation of the glass layer. This is because the glass melts into the oxide and an intermediate temperature where the two are mixed is generated.
この両者に分配され易い元素がAl、Si、Ti。Elements that are easily distributed between these two groups are Al, Si, and Ti.
Zr等である。なお、種々の実験の結果多くの場合金属
基板の上にスピネル型の酸化物層を形成し、ガラス層と
の間に反応層を生じざぜると、極めて密着性が良くなる
。換言するならば、FeとQrとを主成分とする金属基
板の場合デュウ・ポイント(Dew Po1nt )が
25乃至30’Cの湿水素中で1150乃至1250℃
かつ30分乃至1時間表面を酸化し、ガラスに溶は込み
易いAuO3、S[)z、T!02等の酸化物を含む酸
化物層、結晶構造的にはスピネル型の酸化物層を形成す
ると、ガラス層との密着性が極めて良好となる。もちろ
ん、密着性が確保される場合には、この限りではない。Zr etc. In addition, as a result of various experiments, in many cases, if a spinel type oxide layer is formed on a metal substrate and a reaction layer is created between it and the glass layer, the adhesion becomes extremely good. In other words, in the case of a metal substrate mainly composed of Fe and Qr, the temperature is 1150 to 1250°C in wet hydrogen with a dew point of 25 to 30'C.
The surface is oxidized for 30 minutes to 1 hour, and AuO3, S[)z, T! When an oxide layer containing an oxide such as 02 or the like, which has a spinel type crystal structure, is formed, the adhesion with the glass layer becomes extremely good. Of course, this is not the case if adhesion is ensured.
一実施例におけるサーマルヘッドは、金属基板(支)が
共通電極をも兼ねるような構造をとっている。The thermal head in one embodiment has a structure in which the metal substrate (support) also serves as a common electrode.
このため金属基板0上に酸化物層(ロ)を形成後、−部
酸化物層[株]を除去し、この後、スクリーン印刷、乾
燥、焼成を行って80pJnのガラス層を形成した。For this purpose, after forming the oxide layer (b) on the metal substrate 0, the -part oxide layer [Co., Ltd.] was removed, and then screen printing, drying, and firing were performed to form a glass layer of 80 pJn.
この俊、この高抵抗基板aD上にTa−5r −o系よ
りなる発熱抵抗体0Φをスパッタリング法により形成し
、この発熱抵抗体QO上の一部を開孔し、ここに発熱部
OΦを形成するように八ρからなる個別電極■を形成し
、少なくともこの発熱部OΦを被覆する如く、S!02
からなる酸化防止のための保護膜(至)、ざらにT a
205からなる耐摩耗膜(イ)をスパッタリング法に
より形成した。At this time, a heating resistor 0Φ made of Ta-5r-o system was formed on this high-resistance substrate aD by a sputtering method, a hole was opened in a part of this heating resistor QO, and a heating part OΦ was formed there. An individual electrode (2) consisting of eight ρ is formed so as to cover at least this heat generating portion OΦ, and S! 02
A protective film for preventing oxidation consisting of a
A wear-resistant film (a) consisting of 205 was formed by a sputtering method.
次に、第2図(4)および第2図(ト)を参照して、本
発明の他の実施例を説明する。第2図(2)はたて型サ
ーマルヘッドの模式図、第2図υは第1図(4)の要部
断面簡略図である。なお、第2図(4)において、第1
図(2)と同所同部材には詳細な説明は省略する。Next, other embodiments of the present invention will be described with reference to FIGS. 2(4) and 2(g). FIG. 2 (2) is a schematic diagram of a vertical thermal head, and FIG. 2 υ is a simplified sectional view of the main part of FIG. 1 (4). In addition, in Figure 2 (4), the first
Detailed explanations of the same parts and parts as in FIG. 2 will be omitted.
第2図0において、高抵抗基板00は、Fe−18重伍
%のCr−0,4重量%のTt−0,2重量%の1−0
.2重口%の3iからなる板厚0.1#の金属基板上に
厚さ30pのポリイミド層を形成し構成されている。In FIG. 2 0, the high resistance substrate 00 is composed of Fe-18% by weight, Cr-0, 4% by weight Tt-0, 2% by weight 1-0.
.. It is constructed by forming a polyimide layer with a thickness of 30p on a metal substrate with a thickness of 0.1# made of 3i with a double weight ratio.
この場合においては、一実施例と異なり酸化層は形成さ
れていない。In this case, unlike in one embodiment, no oxide layer is formed.
これは、高抵抗体層にポリイミドを使用する場合キュア
ー時に発生する酸化性ガスが金属基板表面を酸化するこ
とでポリイミドと金属基板の接着が進行するからである
。This is because when polyimide is used for the high-resistance layer, oxidizing gas generated during curing oxidizes the surface of the metal substrate, thereby promoting adhesion between the polyimide and the metal substrate.
従って、他の実施例においてはポリイミド塗布前に乾水
素雰囲気中で熱処理し金属基板製造時に生じた酸化物層
を還元しておくことが望ましい。Therefore, in other embodiments, it is desirable to perform heat treatment in a dry hydrogen atmosphere before coating the polyimide to reduce the oxide layer produced during the production of the metal substrate.
他の実施例におけるサーマルヘッドも、金属基板0が共
通電極をも兼ねる構造を取るように、プレポリマー溶液
をスクリーン印刷、プレキュア−1本キュアーを行って
30岬のポリイミドI!(33)を形成した。この後、
ポリイミド表面Ar+02中でのスパッタエツチングを
行った後、Ta−3i −0系よりなる発熱抵抗体00
をスパッタリング法により形成し、この発熱抵抗体αΦ
上の一部を開孔しここに発熱部0@を形成するようにA
l1からなる個別電極(8)を形成し、少なくともこの
発熱部0Φを被覆する如<S ! 02らなる耐酸化保
護膜(至)ざらにはTa205からなる耐摩耗膜(イ)
をスパッタリング法により形成した。この後、曲げ加工
を行って第2図(4)に示すようなたて型ヘッドとして
組み立てた。The thermal head in other embodiments also has a structure in which the metal substrate 0 also serves as a common electrode by screen printing a prepolymer solution and performing precure-one curing to form a 30-cape polyimide I! (33) was formed. After this,
After sputter etching the polyimide surface in Ar+02, a heating resistor 00 made of Ta-3i-0 series
is formed by sputtering method, and this heating resistor αΦ
Open a hole in the upper part and form the heat generating part 0 here A
An individual electrode (8) consisting of l1 is formed to cover at least this heat generating part 0Φ! Oxidation-resistant protective film made of Ta205 (to) and wear-resistant film made of Ta205 (a)
was formed by sputtering method. Thereafter, bending was performed to assemble a vertical head as shown in FIG. 2 (4).
他の実施例におけるサーマルヘッドも、金属基−板■が
共通電極をも兼ねているため、従来のサーマルヘッドを
形成する際に必要であった共通電極を基板上に形成する
工程を省略することができる上、基板の薄肉化が可能で
、しかも金属基板0とポリイミドとの組み合わせにより
曲げ加工が可能となるため、従来より小型サーマルヘッ
ドとして模索されてきたたて型サーマルヘッドを実現可
能とした。これらにより低価格かつ小型でしかも印字性
能に優れたサーマルヘッドを得ることができる。In the thermal heads in other embodiments, the metal substrate (1) also serves as the common electrode, so the step of forming the common electrode on the substrate, which was necessary when forming the conventional thermal head, can be omitted. In addition, it is possible to make the substrate thinner, and the combination of the metal substrate 0 and polyimide makes it possible to bend it, making it possible to create a vertical thermal head, which has been sought as a compact thermal head for some time. . As a result, it is possible to obtain a thermal head that is low in cost, small in size, and has excellent printing performance.
なお、このポリイミドM03)があれば、発熱抵抗体α
Φと金属基板■との絶縁化が図れることは、一実施例と
同様なことは言うまでもない。また、金属基板■は曲げ
る必要があるため、この板厚は略0.03.乃至略1M
の範囲にあると、曲げることが簡易に行える。In addition, if this polyimide M03) is used, the heating resistor α
It goes without saying that the insulation between Φ and the metal substrate (2) can be achieved in the same manner as in the first embodiment. Also, since the metal board (2) needs to be bent, the thickness of this board is approximately 0.03mm. ~1M
If it is within this range, bending can be done easily.
次に本発明者らが、高抵抗基体の材質に先に案出したl
”e−Cr合金に代わってl”e−Cr合金にl、Si
、Sc、Ti、V、Y、Zr、Nb。Next, the inventors of the present invention have previously devised a material for the high-resistance substrate.
``L instead of e-Cr alloy'', Si in e-Cr alloy
, Sc, Ti, V, Y, Zr, Nb.
しa、1−1fの群から選択された少なくとも1つを添
加した合金を用いた理由について述べる。The reason for using an alloy to which at least one selected from the groups 1-1f is used will be described.
第1にサーマルヘッド用に金属基板上にガラス層を形成
したものを使用する場合、その表面に高抵抗体層兼保温
層を形成しなければならないが、単にFe−Cr合金を
用いた場合には金属基板と高抵抗体層の間の密着性が不
十分である場合が多い。これに対し、Fe−Cr合金に
AJ、Si。First, when using a thermal head with a glass layer formed on a metal substrate, a high-resistance layer and heat insulating layer must be formed on the surface, but when simply using an Fe-Cr alloy, In many cases, the adhesion between the metal substrate and the high-resistance layer is insufficient. On the other hand, AJ and Si in Fe-Cr alloy.
Sc、Ti、V、Zr、Nb、La、Hfを添加し、金
属基板表面にガラスに溶は込む易いこれら成分の酸化物
を含む酸化物層、特にスピネル型の酸化物層を形成する
と金属基板とガラス層との密着性は大幅に改善される。When Sc, Ti, V, Zr, Nb, La, and Hf are added and an oxide layer containing oxides of these components that easily melt into glass is formed on the surface of the metal substrate, especially a spinel type oxide layer, the metal substrate can be formed. The adhesion between the glass layer and the glass layer is significantly improved.
第2にサーマルヘッド用の金属基板はサーマルヘッドの
製造中、各種のドライエツチング用の腐食性ガスやケミ
カルエツチング用のエツチング液に触れる上、実使用時
も高温高湿の環境で使用される場合があり、耐食性が要
求される。Fe−0c合金にAJ、Si、3c、Ti、
V、Zr。Second, the metal substrate for the thermal head comes into contact with various corrosive gases for dry etching and etching solutions for chemical etching during the manufacture of the thermal head, and is also used in a high temperature and high humidity environment during actual use. corrosion resistance is required. Fe-0c alloy with AJ, Si, 3c, Ti,
V, Zr.
Nb、La、Hf、特にAJ2.Tr、Hfを添加する
と、耐食性がさらに向上する。Nb, La, Hf, especially AJ2. Addition of Tr and Hf further improves corrosion resistance.
第3に、金属基板にFe−Cr合金を選択した理由とし
て、bCC構造のフェライト系ステンレスであるため、
熱膨張係数が約10XIO−6に−1と従来のサーマル
ヘッド用基板のAnzO3の約7×10−6に−1と近
〈従来使用されている発熱抵抗体、耐閑化保護膜、耐摩
耗膜材料がそのまま使えること、fcc構造のオーステ
ナイト系ステンレス鋼では、熱膨張係数が約17X 1
0−” K″′1と大きいことがあるが、An、Sc、
Ti、V、Zr、Nb。Thirdly, the reason why we chose Fe-Cr alloy for the metal substrate is that it is a ferritic stainless steel with a bCC structure.
Thermal expansion coefficient is about 10XIO-6 to -1, which is close to about 7X10-6 to -1 of the conventional thermal head substrate AnzO3 The membrane material can be used as is, and the thermal expansion coefficient of FCC structure austenitic stainless steel is approximately 17X 1.
Although it may be as large as 0-”K″′1, An, Sc,
Ti, V, Zr, Nb.
La、Hfの添加はbcc構造のフェライト層を安定化
し、オーステナイト化を抑える効果がある。Addition of La and Hf has the effect of stabilizing the ferrite layer with the bcc structure and suppressing austenitization.
したがって、Fe−Cr系合金の特性(サーマルヘッド
の製造中、各種のドライエツチング用ガスやケミカルエ
ツチング用のエツチング液に触れる・ため、これを防止
する耐食性)を生かすためには、Crを略5重口%乃至
略30重量%望ましくは略8重量%乃至略20重量%含
有すれば十分である。Therefore, in order to take advantage of the characteristics of the Fe-Cr alloy (corrosion resistance that prevents contact with various dry etching gases and chemical etching solutions during the manufacture of thermal heads), it is necessary to It is sufficient to contain % by weight to about 30% by weight, preferably about 8% to about 20% by weight.
次に、、Sc、Ti、V、Zr、Nb。Next, Sc, Ti, V, Zr, Nb.
1−a、1−1fの添加口を実質的に0.05重重囚乃
至5重量%と限定したのは次の理由による。0.05重
但%未満では、上記効果が期待できない。5重量%より
多くなると、この第3元素自身が結晶構造をfccのオ
ーステナイト系に変化させてしまう恐れがある上、薄板
加工時の加工性も著しく劣化し、経済的にも得策ではな
い。The reason why the addition ports of 1-a and 1-1f were substantially limited to 0.05% by weight to 5% by weight is as follows. If it is less than 0.05% by weight, the above effects cannot be expected. If the amount exceeds 5% by weight, there is a risk that the third element itself may change the crystal structure to an FCC austenitic system, and the workability during thin plate processing will also be significantly degraded, which is not economically advisable.
なお、第3元素の添加口を選定し、ざらに、酸化物層の
厚さを選定することにより、この酸化物層を高抵抗体層
として用いることもできる。Note that by selecting the addition port for the third element and roughly selecting the thickness of the oxide layer, this oxide layer can also be used as a high-resistance layer.
上述の構成をとることにより、本発明のサーマルヘッド
は小型、安価で印字性能に浸れたサーマ第1図(4)は
本発明の一実施例を示す平型サーマルヘッドの模式図、
第1図υは第1図(4)の要部断面簡略図、第2図(ハ
)は本発明の他の実施例を示すたて型サーマルヘッドの
模式図、第2図(ハ)は第2図(2)の要部断面簡略図
である。By adopting the above configuration, the thermal head of the present invention is small, inexpensive, and has excellent printing performance. Figure 1 (4) is a schematic diagram of a flat thermal head showing an embodiment of the present invention.
FIG. 1 υ is a simplified cross-sectional view of the main part of FIG. 1 (4), FIG. 2 (C) is a schematic diagram of a vertical thermal head showing another embodiment of the present invention, and FIG. It is a simplified cross-sectional view of the main part of FIG. 2(2).
■・・・ドライバ基板、 (4)・・・抵抗基板、■・
・・導体配線、 (8)・・・個別リード、00・
・・発熱抵抗体、 ■・・・金属基板、0つ・・・高
抵抗体層、ポリイミド層、Cの・・・酸化物層。■...Driver board, (4)...Resistance board, ■...
・・Conductor wiring, (8) ・・Individual lead, 00・
...heating resistor, ■...metal substrate, 0...high resistance layer, polyimide layer, C...oxide layer.
代理人 弁理士 則 近 憲 佑 同 竹 花 喜久男 (a) (b)り。Agent: Patent Attorney Noriyuki Chika Same Bamboo Flower Kikuo (a) (b) Ri.
第1図Figure 1
Claims (11)
続する導電体とを少なくとも備えたサーマルヘッドにお
いて、 前記基体は、Crを実質的に5重量%乃至30重量%と
、Al、Si、Sc、Ti、V、Y、Zr、Nb、La
、Hfの群から選択された少なくとも1つを実質的に0
.05重量%乃至5重量%含有する鉄合金であることを
特徴とするサーマルヘッド。(1) A thermal head comprising at least a base, a heat generating resistor formed on the base, and a conductor formed on the base and electrically connected to the heat generating resistor, the base comprising: Substantially 5% to 30% by weight of Cr, Al, Si, Sc, Ti, V, Y, Zr, Nb, La
, Hf substantially zero.
.. 1. A thermal head characterized by being made of an iron alloy containing 05% to 5% by weight.
構成元素の酸化物層とからなることを特徴とする特許請
求の範囲第1項記載のサーマルヘッド。(2) The thermal head according to claim 1, wherein the base body is made of a metal and an oxide layer of a constituent element formed on the main surface of the metal.
を特徴とする特許請求の範囲第2項記載のサーマルヘッ
ド。(3) The thermal head according to claim 2, wherein the oxide layer is a spinel-based oxide.
mmの範囲にあることを特徴とする特許請求の範囲第1
項記載のサーマルヘッド。(4) The thickness of the base is substantially 0.03 mm to 1
Claim 1 characterized in that it is in the range of mm.
Thermal head described in section.
の間には、高抵抗体層が介在していることを特徴とする
特許請求の範囲第1項記載のサーマルヘッド。(5) The thermal head according to claim 1, wherein a high-resistance layer is interposed between the base, the heating resistor, and the conductor.
する特許請求の範囲第5項記載のサーマルヘッド。(6) The thermal head according to claim 5, wherein the high resistance layer is made of a glass layer.
徴とする特許請求の範囲第6項記載のサーマルヘッド。(7) The thermal head according to claim 6, wherein the glass layer is made of crystallized glass.
とする特許請求の範囲第5項記載のサーマルヘッド。(8) The thermal head according to claim 5, wherein the high-resistance layer is made of a heat-resistant resin layer.
成元素の酸化物層と、この酸化物層上に形成されたガラ
ス層とからなることを特徴とする特許請求の範囲第5項
記載のサーマルヘッド。(9) The high-resistance layer comprises an oxide layer of a constituent element formed on the main surface of the base, and a glass layer formed on the oxide layer. The thermal head according to item 5.
とを特徴とする特許請求の範囲第9項記載のサーマルヘ
ッド。(10) The thermal head according to claim 9, wherein the oxide layer is a spinel-based oxide.
特徴とする特許請求の範囲第9項または第10項記載の
サーマルヘッド。(11) The thermal head according to claim 9 or 10, wherein the glass layer is made of crystallized glass.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62122503A JPH0635184B2 (en) | 1986-07-04 | 1987-05-21 | Thermal head |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15610886 | 1986-07-04 | ||
JP61-156108 | 1986-08-27 | ||
JP19891486 | 1986-08-27 | ||
JP61-198914 | 1986-08-27 | ||
JP62122503A JPH0635184B2 (en) | 1986-07-04 | 1987-05-21 | Thermal head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01105757A true JPH01105757A (en) | 1989-04-24 |
JPH0635184B2 JPH0635184B2 (en) | 1994-05-11 |
Family
ID=27314465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62122503A Expired - Lifetime JPH0635184B2 (en) | 1986-07-04 | 1987-05-21 | Thermal head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0635184B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57185170A (en) * | 1981-05-09 | 1982-11-15 | Toshiba Corp | Heat dissipating base plate |
-
1987
- 1987-05-21 JP JP62122503A patent/JPH0635184B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57185170A (en) * | 1981-05-09 | 1982-11-15 | Toshiba Corp | Heat dissipating base plate |
Also Published As
Publication number | Publication date |
---|---|
JPH0635184B2 (en) | 1994-05-11 |
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