JP7842759B2 - 低周波ｒｆ発生器および関連する静電チャック - Google Patents

低周波ｒｆ発生器および関連する静電チャック

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Publication number
JP7842759B2
JP7842759B2 JP2023534597A JP2023534597A JP7842759B2 JP 7842759 B2 JP7842759 B2 JP 7842759B2 JP 2023534597 A JP2023534597 A JP 2023534597A JP 2023534597 A JP2023534597 A JP 2023534597A JP 7842759 B2 JP7842759 B2 JP 7842759B2
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JP
Japan
Prior art keywords
signal
generator
modified
frequency
khz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023534597A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023553066A (ja
JP2023553066A5 (https=
JPWO2022125231A5 (https=
Inventor
マラクタノフ・アレクセイ・エム．
コザケヴィッチ・フェリックス・レイブ
ジ・ビング
ボウミック・ラナディープ
ホランド・ジョン・パトリック
マチュシュキン・アレクサンダー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
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Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023553066A publication Critical patent/JP2023553066A/ja
Publication of JP2023553066A5 publication Critical patent/JP2023553066A5/ja
Publication of JPWO2022125231A5 publication Critical patent/JPWO2022125231A5/ja
Application granted granted Critical
Publication of JP7842759B2 publication Critical patent/JP7842759B2/ja
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Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
JP2023534597A 2020-12-08 2021-11-05 低周波ｒｆ発生器および関連する静電チャック Active JP7842759B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063122659P 2020-12-08 2020-12-08
US63/122,659 2020-12-08
US202163164450P 2021-03-22 2021-03-22
US63/164,450 2021-03-22
PCT/US2021/058357 WO2022125231A1 (en) 2020-12-08 2021-11-05 Low frequency rf generator and associated electrostatic chuck

Publications (4)

Publication Number Publication Date
JP2023553066A JP2023553066A (ja) 2023-12-20
JP2023553066A5 JP2023553066A5 (https=) 2024-11-01
JPWO2022125231A5 JPWO2022125231A5 (https=) 2024-11-01
JP7842759B2 true JP7842759B2 (ja) 2026-04-08

Family

ID=81974772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023534597A Active JP7842759B2 (ja) 2020-12-08 2021-11-05 低周波ｒｆ発生器および関連する静電チャック

Country Status (4)

Country Link
US (1) US12387909B2 (https=)
JP (1) JP7842759B2 (https=)
KR (1) KR20230114184A (https=)
WO (1) WO2022125231A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
WO2022103765A1 (en) * 2020-11-13 2022-05-19 Lam Research Corporation Systems and methods for radiofrequency signal generator-based control of impedance matching system
KR20230107477A (ko) * 2020-11-18 2023-07-17 램 리써치 코포레이션 임피던스 매칭을 위한 균일도 제어 회로
JP7560214B2 (ja) * 2021-03-11 2024-10-02 東京エレクトロン株式会社 着火方法及びプラズマ処理装置
JP7374961B2 (ja) * 2021-07-27 2023-11-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
JP2025508379A (ja) * 2022-02-18 2025-03-26 ラム リサーチ コーポレーション 中心周波数同調のためのシステムおよび方法
JP7577093B2 (ja) * 2022-06-29 2024-11-01 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
CN119998917A (zh) * 2022-09-28 2025-05-13 应用材料公司 用于等离子体处理系统的宽带供应电路系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219026A (ja) 2009-02-05 2010-09-30 Mks Instruments Inc 無線周波数電力制御システム
JP2011525682A (ja) 2008-05-14 2011-09-22 アプライド マテリアルズ インコーポレイテッド Ｒｆ電力供給のための時間分解チューニングスキームを利用したパルス化プラズマ処理の方法及び装置
JP2018026331A (ja) 2016-07-25 2018-02-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法
US20200286717A1 (en) 2019-03-08 2020-09-10 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (rf) power application in a plasma processing chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11367597B2 (en) 2018-07-05 2022-06-21 Samsung Electronics Co., Ltd. Electrostatic chuck and plasma processing apparatus including the same
KR102650167B1 (ko) * 2018-07-05 2024-03-22 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
US10854427B2 (en) * 2018-08-30 2020-12-01 Applied Materials, Inc. Radio frequency (RF) pulsing impedance tuning with multiplier mode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011525682A (ja) 2008-05-14 2011-09-22 アプライド マテリアルズ インコーポレイテッド Ｒｆ電力供給のための時間分解チューニングスキームを利用したパルス化プラズマ処理の方法及び装置
JP2010219026A (ja) 2009-02-05 2010-09-30 Mks Instruments Inc 無線周波数電力制御システム
JP2018026331A (ja) 2016-07-25 2018-02-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法
US20200286717A1 (en) 2019-03-08 2020-09-10 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (rf) power application in a plasma processing chamber

Also Published As

Publication number Publication date
JP2023553066A (ja) 2023-12-20
US12387909B2 (en) 2025-08-12
WO2022125231A1 (en) 2022-06-16
KR20230114184A (ko) 2023-08-01
US20230274914A1 (en) 2023-08-31

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