KR20230114184A - 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck) - Google Patents

저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck) Download PDF

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Publication number
KR20230114184A
KR20230114184A KR1020227045355A KR20227045355A KR20230114184A KR 20230114184 A KR20230114184 A KR 20230114184A KR 1020227045355 A KR1020227045355 A KR 1020227045355A KR 20227045355 A KR20227045355 A KR 20227045355A KR 20230114184 A KR20230114184 A KR 20230114184A
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KR
South Korea
Prior art keywords
signal
generator
modified
frequency
khz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227045355A
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English (en)
Korean (ko)
Inventor
알렉세이 엠. 마라크타노브
펠릭스 레이브 코자케비치
빙 지
라나딥 보우믹
존 패트릭 홀랜드
알렉산더 마티슈킨
Original Assignee
램 리써치 코포레이션
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Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20230114184A publication Critical patent/KR20230114184A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/67109—
    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1020227045355A 2020-12-08 2021-11-05 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck) Pending KR20230114184A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063122659P 2020-12-08 2020-12-08
US63/122,659 2020-12-08
US202163164450P 2021-03-22 2021-03-22
US63/164,450 2021-03-22
PCT/US2021/058357 WO2022125231A1 (en) 2020-12-08 2021-11-05 Low frequency rf generator and associated electrostatic chuck

Publications (1)

Publication Number Publication Date
KR20230114184A true KR20230114184A (ko) 2023-08-01

Family

ID=81974772

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227045355A Pending KR20230114184A (ko) 2020-12-08 2021-11-05 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck)

Country Status (4)

Country Link
US (1) US12387909B2 (https=)
JP (1) JP7842759B2 (https=)
KR (1) KR20230114184A (https=)
WO (1) WO2022125231A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
WO2022103765A1 (en) * 2020-11-13 2022-05-19 Lam Research Corporation Systems and methods for radiofrequency signal generator-based control of impedance matching system
KR20230107477A (ko) * 2020-11-18 2023-07-17 램 리써치 코포레이션 임피던스 매칭을 위한 균일도 제어 회로
JP7560214B2 (ja) * 2021-03-11 2024-10-02 東京エレクトロン株式会社 着火方法及びプラズマ処理装置
JP7374961B2 (ja) * 2021-07-27 2023-11-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
JP2025508379A (ja) * 2022-02-18 2025-03-26 ラム リサーチ コーポレーション 中心周波数同調のためのシステムおよび方法
JP7577093B2 (ja) * 2022-06-29 2024-11-01 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
CN119998917A (zh) * 2022-09-28 2025-05-13 应用材料公司 用于等离子体处理系统的宽带供应电路系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011525682A (ja) * 2008-05-14 2011-09-22 アプライド マテリアルズ インコーポレイテッド Ｒｆ電力供給のための時間分解チューニングスキームを利用したパルス化プラズマ処理の方法及び装置
US8040068B2 (en) * 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
US10283330B2 (en) * 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
US11367597B2 (en) 2018-07-05 2022-06-21 Samsung Electronics Co., Ltd. Electrostatic chuck and plasma processing apparatus including the same
KR102650167B1 (ko) * 2018-07-05 2024-03-22 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
US10854427B2 (en) * 2018-08-30 2020-12-01 Applied Materials, Inc. Radio frequency (RF) pulsing impedance tuning with multiplier mode
US12300473B2 (en) * 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber

Also Published As

Publication number Publication date
JP2023553066A (ja) 2023-12-20
US12387909B2 (en) 2025-08-12
WO2022125231A1 (en) 2022-06-16
JP7842759B2 (ja) 2026-04-08
US20230274914A1 (en) 2023-08-31

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