JP7833657B2 - 撮像装置及びその駆動方法 - Google Patents

撮像装置及びその駆動方法

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Publication number
JP7833657B2
JP7833657B2 JP2023506841A JP2023506841A JP7833657B2 JP 7833657 B2 JP7833657 B2 JP 7833657B2 JP 2023506841 A JP2023506841 A JP 2023506841A JP 2023506841 A JP2023506841 A JP 2023506841A JP 7833657 B2 JP7833657 B2 JP 7833657B2
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JP
Japan
Prior art keywords
potential
impurity region
transistor
contact hole
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023506841A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022196155A5 (https=
JPWO2022196155A1 (https=
Inventor
好弘 佐藤
貴幸 西谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of JPWO2022196155A1 publication Critical patent/JPWO2022196155A1/ja
Publication of JPWO2022196155A5 publication Critical patent/JPWO2022196155A5/ja
Application granted granted Critical
Publication of JP7833657B2 publication Critical patent/JP7833657B2/ja
Active legal-status Critical Current
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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/709Circuitry for control of the power supply
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2023506841A 2021-03-16 2022-02-03 撮像装置及びその駆動方法 Active JP7833657B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021042047 2021-03-16
JP2021042047 2021-03-16
PCT/JP2022/004158 WO2022196155A1 (ja) 2021-03-16 2022-02-03 撮像装置及びその駆動方法

Publications (3)

Publication Number Publication Date
JPWO2022196155A1 JPWO2022196155A1 (https=) 2022-09-22
JPWO2022196155A5 JPWO2022196155A5 (https=) 2023-12-13
JP7833657B2 true JP7833657B2 (ja) 2026-03-23

Family

ID=83320317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023506841A Active JP7833657B2 (ja) 2021-03-16 2022-02-03 撮像装置及びその駆動方法

Country Status (3)

Country Link
US (1) US12348884B2 (https=)
JP (1) JP7833657B2 (https=)
WO (1) WO2022196155A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022124088A1 (ja) * 2020-12-11 2022-06-16 パナソニックIpマネジメント株式会社 撮像装置および駆動方法
WO2026053822A1 (ja) * 2024-09-09 2026-03-12 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119441A (ja) 2009-12-03 2011-06-16 Sony Corp 撮像素子およびカメラシステム
JP2016127593A (ja) 2014-12-26 2016-07-11 パナソニックIpマネジメント株式会社 撮像装置
JP2019091937A (ja) 2019-02-27 2019-06-13 パナソニックIpマネジメント株式会社 撮像装置
WO2020045121A1 (ja) 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその駆動方法、並びに電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5449242B2 (ja) 2011-03-29 2014-03-19 富士フイルム株式会社 固体撮像素子及び撮像装置
JP6213743B2 (ja) 2014-10-08 2017-10-18 パナソニックIpマネジメント株式会社 撮像装置およびその駆動方法
US9967501B2 (en) 2014-10-08 2018-05-08 Panasonic Intellectual Property Management Co., Ltd. Imaging device
CN111901540B (zh) 2014-12-26 2023-05-23 松下知识产权经营株式会社 摄像装置
JP2017135693A (ja) 2016-01-21 2017-08-03 パナソニックIpマネジメント株式会社 撮像装置
JP7511187B2 (ja) 2019-02-22 2024-07-05 パナソニックIpマネジメント株式会社 撮像装置
JP7668464B2 (ja) 2019-09-26 2025-04-25 パナソニックIpマネジメント株式会社 撮像装置
US20240155826A1 (en) * 2022-11-08 2024-05-09 International Business Machines Corporation Fet dram with backside bitline

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119441A (ja) 2009-12-03 2011-06-16 Sony Corp 撮像素子およびカメラシステム
JP2016127593A (ja) 2014-12-26 2016-07-11 パナソニックIpマネジメント株式会社 撮像装置
WO2020045121A1 (ja) 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2019091937A (ja) 2019-02-27 2019-06-13 パナソニックIpマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
JPWO2022196155A1 (https=) 2022-09-22
WO2022196155A1 (ja) 2022-09-22
US12348884B2 (en) 2025-07-01
US20230403479A1 (en) 2023-12-14

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