JP7831490B2 - ヘテロエピタキシャルウェーハの製造方法 - Google Patents

ヘテロエピタキシャルウェーハの製造方法

Info

Publication number
JP7831490B2
JP7831490B2 JP2023557901A JP2023557901A JP7831490B2 JP 7831490 B2 JP7831490 B2 JP 7831490B2 JP 2023557901 A JP2023557901 A JP 2023557901A JP 2023557901 A JP2023557901 A JP 2023557901A JP 7831490 B2 JP7831490 B2 JP 7831490B2
Authority
JP
Japan
Prior art keywords
sic
single crystal
film
sic single
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023557901A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023079880A1 (https=
JPWO2023079880A5 (https=
Inventor
寿樹 松原
温 鈴木
剛 大槻
達夫 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of JPWO2023079880A1 publication Critical patent/JPWO2023079880A1/ja
Publication of JPWO2023079880A5 publication Critical patent/JPWO2023079880A5/ja
Application granted granted Critical
Publication of JP7831490B2 publication Critical patent/JP7831490B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023557901A 2021-11-08 2022-10-01 ヘテロエピタキシャルウェーハの製造方法 Active JP7831490B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021182078 2021-11-08
JP2021182078 2021-11-08
PCT/JP2022/036878 WO2023079880A1 (ja) 2021-11-08 2022-10-01 ヘテロエピタキシャルウェーハの製造方法

Publications (3)

Publication Number Publication Date
JPWO2023079880A1 JPWO2023079880A1 (https=) 2023-05-11
JPWO2023079880A5 JPWO2023079880A5 (https=) 2024-07-19
JP7831490B2 true JP7831490B2 (ja) 2026-03-17

Family

ID=86241448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023557901A Active JP7831490B2 (ja) 2021-11-08 2022-10-01 ヘテロエピタキシャルウェーハの製造方法

Country Status (6)

Country Link
EP (1) EP4431645A4 (https=)
JP (1) JP7831490B2 (https=)
KR (1) KR20240101577A (https=)
CN (1) CN118202096A (https=)
TW (1) TW202323576A (https=)
WO (1) WO2023079880A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7619349B2 (ja) * 2022-09-16 2025-01-22 信越半導体株式会社 窒化物半導体層付き単結晶シリコン基板及び窒化物半導体層付き単結晶シリコン基板の製造方法
CN119877097A (zh) * 2023-11-27 2025-04-25 保定市北方特种气体有限公司 烷基硅烷制备芯片用碳化硅外延片的方法
CN120321995B (zh) * 2025-06-11 2025-09-09 比亚迪股份有限公司 碳化硅外延片及其制备方法和功率器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002234799A (ja) 2001-02-01 2002-08-23 Univ Tohoku ＳｉＣ膜の製造方法、及びＳｉＣ多層膜構造の製造方法
JP2003212694A (ja) 2002-01-28 2003-07-30 Toshiba Ceramics Co Ltd 電子素子基板上へのＳｉＣ又はＧａＮ単結晶の成長方法
JP2006036613A (ja) 2004-07-30 2006-02-09 Nagaoka Univ Of Technology ケイ素基板上に立方晶炭化ケイ素結晶膜を形成する方法
JP2016092399A (ja) 2014-10-31 2016-05-23 セイコーエプソン株式会社 炭化ケイ素膜付き基板、炭化ケイ素膜付き基板の製造方法、及び、半導体装置
JP2019117908A (ja) 2017-12-27 2019-07-18 エア・ウォーター株式会社 化合物半導体基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002234799A (ja) 2001-02-01 2002-08-23 Univ Tohoku ＳｉＣ膜の製造方法、及びＳｉＣ多層膜構造の製造方法
JP2003212694A (ja) 2002-01-28 2003-07-30 Toshiba Ceramics Co Ltd 電子素子基板上へのＳｉＣ又はＧａＮ単結晶の成長方法
JP2006036613A (ja) 2004-07-30 2006-02-09 Nagaoka Univ Of Technology ケイ素基板上に立方晶炭化ケイ素結晶膜を形成する方法
JP2016092399A (ja) 2014-10-31 2016-05-23 セイコーエプソン株式会社 炭化ケイ素膜付き基板、炭化ケイ素膜付き基板の製造方法、及び、半導体装置
JP2019117908A (ja) 2017-12-27 2019-07-18 エア・ウォーター株式会社 化合物半導体基板

Also Published As

Publication number Publication date
JPWO2023079880A1 (https=) 2023-05-11
KR20240101577A (ko) 2024-07-02
EP4431645A4 (en) 2025-10-08
WO2023079880A1 (ja) 2023-05-11
CN118202096A (zh) 2024-06-14
TW202323576A (zh) 2023-06-16
EP4431645A1 (en) 2024-09-18

Similar Documents

Publication Publication Date Title
JP7831490B2 (ja) ヘテロエピタキシャルウェーハの製造方法
CN113235047B (zh) 一种AlN薄膜的制备方法
CN109065438B (zh) AlN薄膜的制备方法
CN105140102B (zh) 一种优化的在硅衬底上外延生长β-碳化硅薄膜的方法
JP7259906B2 (ja) ヘテロエピタキシャルウェーハの製造方法
KR101204029B1 (ko) 질화갈륨 단결정 후막의 제조방법
Boo et al. Growth of hexagonal GaN thin films on Si (1 1 1) with cubic SiC buffer layers
Teker et al. Epitaxial growth of 3C-SiC on Si (001) using hexamethyldisilane and comparison with growth on Si (111)
CN108511322B (zh) 一种在二维石墨衬底上制备GaN薄膜的方法
JP7218832B1 (ja) ヘテロエピタキシャルウェーハの製造方法
KR20250135787A (ko) 3C-SiC 단결정 에피택셜 기판의 제조방법, 3C-SiC 자립기판의 제조방법, 및 3C-SiC 단결정 에피택셜 기판
CN110323126B (zh) 一种Si/SiC/石墨烯材料的制备方法
Chiu et al. Deposition of epitaxial β–SiC films on porous Si (100) from MTS in a hot wall LPCVD reactor
CN113089091A (zh) 氮化硼模板及其制备方法
Li et al. Epitaxial of III-Nitride LED Materials
JP2026059198A (ja) 半導体基板及びその製造方法
Eid et al. 3C-SiC growth on Si substrates via CVD: An introduction
JP2026056867A (ja) 半導体基板及びその製造方法
CN117026370A (zh) 一种氮化硼范德华外延大尺寸氮化镓微波材料及生长方法
JP2023165572A (ja) 高品質・低コストＧａＮ自立基板の製造方法
Padavala et al. Heteroepitaxial Growth of Boron Phosphide on 3C-SiC/Si (100) and AlN/Sapphire (0001) Substrates
Severino et al. Growth of 3C-SiC on Si: influence of process pressure
Hens et al. Growth of cubic silicon carbide on silicon using Hot Filament CVD
WO2018078385A1 (en) Coated wafer
Raghothamachar CRYSTAL GROWTH AND CHARACTERIZATION OF CUBIC BORON PHOSPHIDE ON SILICON CARBIDE

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240501

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240501

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250714

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250902

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251020

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260216

R150 Certificate of patent or registration of utility model

Ref document number: 7831490

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150