JPWO2023079880A1 - - Google Patents
Info
- Publication number
- JPWO2023079880A1 JPWO2023079880A1 JP2023557901A JP2023557901A JPWO2023079880A1 JP WO2023079880 A1 JPWO2023079880 A1 JP WO2023079880A1 JP 2023557901 A JP2023557901 A JP 2023557901A JP 2023557901 A JP2023557901 A JP 2023557901A JP WO2023079880 A1 JPWO2023079880 A1 JP WO2023079880A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021182078 | 2021-11-08 | ||
| JP2021182078 | 2021-11-08 | ||
| PCT/JP2022/036878 WO2023079880A1 (ja) | 2021-11-08 | 2022-10-01 | ヘテロエピタキシャルウェーハの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023079880A1 true JPWO2023079880A1 (https=) | 2023-05-11 |
| JPWO2023079880A5 JPWO2023079880A5 (https=) | 2024-07-19 |
| JP7831490B2 JP7831490B2 (ja) | 2026-03-17 |
Family
ID=86241448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023557901A Active JP7831490B2 (ja) | 2021-11-08 | 2022-10-01 | ヘテロエピタキシャルウェーハの製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4431645A4 (https=) |
| JP (1) | JP7831490B2 (https=) |
| KR (1) | KR20240101577A (https=) |
| CN (1) | CN118202096A (https=) |
| TW (1) | TW202323576A (https=) |
| WO (1) | WO2023079880A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7619349B2 (ja) * | 2022-09-16 | 2025-01-22 | 信越半導体株式会社 | 窒化物半導体層付き単結晶シリコン基板及び窒化物半導体層付き単結晶シリコン基板の製造方法 |
| CN119877097A (zh) * | 2023-11-27 | 2025-04-25 | 保定市北方特种气体有限公司 | 烷基硅烷制备芯片用碳化硅外延片的方法 |
| CN120321995B (zh) * | 2025-06-11 | 2025-09-09 | 比亚迪股份有限公司 | 碳化硅外延片及其制备方法和功率器件 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002234799A (ja) * | 2001-02-01 | 2002-08-23 | Univ Tohoku | ＳｉＣ膜の製造方法、及びＳｉＣ多層膜構造の製造方法 |
| JP2003212694A (ja) * | 2002-01-28 | 2003-07-30 | Toshiba Ceramics Co Ltd | 電子素子基板上へのＳｉＣ又はＧａＮ単結晶の成長方法 |
| JP2006036613A (ja) * | 2004-07-30 | 2006-02-09 | Nagaoka Univ Of Technology | ケイ素基板上に立方晶炭化ケイ素結晶膜を形成する方法 |
| JP2016092399A (ja) * | 2014-10-31 | 2016-05-23 | セイコーエプソン株式会社 | 炭化ケイ素膜付き基板、炭化ケイ素膜付き基板の製造方法、及び、半導体装置 |
| JP2019117908A (ja) * | 2017-12-27 | 2019-07-18 | エア・ウォーター株式会社 | 化合物半導体基板 |
-
2022
- 2022-10-01 CN CN202280073933.6A patent/CN118202096A/zh active Pending
- 2022-10-01 JP JP2023557901A patent/JP7831490B2/ja active Active
- 2022-10-01 KR KR1020247014975A patent/KR20240101577A/ko active Pending
- 2022-10-01 EP EP22889704.7A patent/EP4431645A4/en active Pending
- 2022-10-01 WO PCT/JP2022/036878 patent/WO2023079880A1/ja not_active Ceased
- 2022-10-07 TW TW111138177A patent/TW202323576A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002234799A (ja) * | 2001-02-01 | 2002-08-23 | Univ Tohoku | ＳｉＣ膜の製造方法、及びＳｉＣ多層膜構造の製造方法 |
| JP2003212694A (ja) * | 2002-01-28 | 2003-07-30 | Toshiba Ceramics Co Ltd | 電子素子基板上へのＳｉＣ又はＧａＮ単結晶の成長方法 |
| JP2006036613A (ja) * | 2004-07-30 | 2006-02-09 | Nagaoka Univ Of Technology | ケイ素基板上に立方晶炭化ケイ素結晶膜を形成する方法 |
| JP2016092399A (ja) * | 2014-10-31 | 2016-05-23 | セイコーエプソン株式会社 | 炭化ケイ素膜付き基板、炭化ケイ素膜付き基板の製造方法、及び、半導体装置 |
| JP2019117908A (ja) * | 2017-12-27 | 2019-07-18 | エア・ウォーター株式会社 | 化合物半導体基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240101577A (ko) | 2024-07-02 |
| EP4431645A4 (en) | 2025-10-08 |
| WO2023079880A1 (ja) | 2023-05-11 |
| CN118202096A (zh) | 2024-06-14 |
| JP7831490B2 (ja) | 2026-03-17 |
| TW202323576A (zh) | 2023-06-16 |
| EP4431645A1 (en) | 2024-09-18 |
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