JP7828156B2 - 色分離レンズアレイを備えるイメージセンサ及びそれを含む電子装置 - Google Patents
色分離レンズアレイを備えるイメージセンサ及びそれを含む電子装置Info
- Publication number
- JP7828156B2 JP7828156B2 JP2021174560A JP2021174560A JP7828156B2 JP 7828156 B2 JP7828156 B2 JP 7828156B2 JP 2021174560 A JP2021174560 A JP 2021174560A JP 2021174560 A JP2021174560 A JP 2021174560A JP 7828156 B2 JP7828156 B2 JP 7828156B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
- G02B27/1013—Beam splitting or combining systems for splitting or combining different wavelengths for colour or multispectral image sensors, e.g. splitting an image into monochromatic image components on respective sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/12—Beam splitting or combining systems operating by refraction only
- G02B27/123—The splitting element being a lens or a system of lenses, including arrays and surfaces with refractive power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
- H04N25/136—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements using complementary colours
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/01—Circuitry for demodulating colour component signals modulated spatially by colour striped filters by phase separation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
1010 タイミングコントローラ
1020 ロウデコーダ
1030 出力回路
1100 画素アレイ
110 センサ基板
111 第1緑色画素
112 青色画素
113 赤色画素
114 第2緑色画素
120 スペーサ層
130 色分離レンズアレイ
Claims (6)
- 第1波長の光を感知するための第1画素、及び第1波長よりも短い第2波長の光を感知するための第2画素を含むセンサ基板と、
入射する光のうち、第1波長の光を前記第1画素に集光し、第2波長の光を前記第2画素に集光し、かつ、断面の直径が第1波長および第2波長より小さい寸法を有するナノポストと、前記ナノポストの周囲に設けられるとともに前記ナノポストよりも低い屈折率を有する誘電体材料とを含む色分離レンズアレイと、を含み、
前記色分離レンズアレイは、
前記第1画素に対応する位置に配置された第1画素対応領域と、
前記第2画素に対応する位置に配置された第2画素対応領域と、を含み、
前記第1画素対応領域の中心を通過した第1波長の光と前記第2画素対応領域の中心を通過した第1波長の光との位相差は、前記第1画素対応領域の中心を通過した第2波長の光と前記第2画素対応領域の中心を通過した第2波長の光との位相差よりも小さく、
前記ナノポストは、
前記第1画素対応領域を通過した第1波長の光が、前記第1画素対応領域の中心から遠ざかる方向に減少する位相分布を有し、
前記第2画素対応領域を通過した第2波長の光が、前記第2画素対応領域の中心から遠ざかる方向に減少する位相分布を有する
ように前記第1画素対応領域および前記第2画素対応領域に互いに異なる規則で配置され、
前記色分離レンズアレイによる第2波長の光の焦点距離は、前記色分離レンズアレイによる第1波長の光の焦点距離の90%~110%である、イメージセンサ。 - 前記第1画素対応領域の中心を通過した第1波長の光と前記第1画素対応領域の中心を通過した第1波長の光との位相差は、前記第2画素対応領域の中心を通過した第2波長の光と前記第2画素対応領域の中心を通過した第2波長の光との位相差の60%~90%である、請求項1に記載のイメージセンサ。
- 前記第1画素対応領域の中心を通過した第1波長の光と前記第2画素対応領域の中心を通過した第1波長の光との位相差は、0.9π~1.1πであり、
前記第1画素対応領域の中心を通過した第2波長の光と前記第2画素対応領域の中心を通過した第2波長の光との位相差は、1.1π~1.5πである、請求項1または2に記載のイメージセンサ。 - 前記第1画素は、第1波長光を感知するための2~16個の光感知セルを含む、請求項1~3のいずれかに記載のイメージセンサ。
- 前記第2画素は、第2波長光を感知するための2~16個の光感知セルを含む、請求項1~4のいずれかに記載のイメージセンサ。
- 光学像を電気的信号に変換するイメージセンサ、及び前記イメージセンサの動作を制御し、前記イメージセンサで生成した信号を保存及び出力するプロセッサを含み、
前記イメージセンサは、請求項1~5のいずれかに記載のイメージセンサである、電子装置。
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20200142529 | 2020-10-29 | ||
| KR10-2020-0142529 | 2020-10-29 | ||
| KR10-2021-0102020 | 2021-08-03 | ||
| KR1020210102020A KR20220057410A (ko) | 2020-10-29 | 2021-08-03 | 색분리 렌즈 어레이를 구비하는 이미지 센서 및 이를 포함하는 전자 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022074053A JP2022074053A (ja) | 2022-05-17 |
| JP7828156B2 true JP7828156B2 (ja) | 2026-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2021174560A Active JP7828156B2 (ja) | 2020-10-29 | 2021-10-26 | 色分離レンズアレイを備えるイメージセンサ及びそれを含む電子装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US12124049B2 (ja) |
| EP (1) | EP3993047B1 (ja) |
| JP (1) | JP7828156B2 (ja) |
| CN (1) | CN114430467A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11652121B2 (en) * | 2019-11-28 | 2023-05-16 | Samsung Electronics Co., Ltd. | Color separation element and image sensor including the same |
| US20240322056A1 (en) * | 2023-03-21 | 2024-09-26 | Visera Technologies Company Ltd. | Optical device |
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2021
- 2021-10-26 JP JP2021174560A patent/JP7828156B2/ja active Active
- 2021-10-28 CN CN202111266851.7A patent/CN114430467A/zh active Pending
- 2021-10-28 EP EP21205336.7A patent/EP3993047B1/en active Active
- 2021-10-29 US US17/514,692 patent/US12124049B2/en active Active
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2024
- 2024-08-20 US US18/810,002 patent/US20240411147A1/en active Pending
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| WO2005059607A1 (ja) | 2003-12-18 | 2005-06-30 | Matsushita Electric Industrial Co., Ltd. | 集光素子および固体撮像装置 |
| WO2007043226A1 (ja) | 2005-10-12 | 2007-04-19 | Sumitomo Electric Industries, Ltd. | 固体撮像装置とその製造方法 |
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| Publication number | Publication date |
|---|---|
| US20220137423A1 (en) | 2022-05-05 |
| US12124049B2 (en) | 2024-10-22 |
| JP2022074053A (ja) | 2022-05-17 |
| EP3993047B1 (en) | 2026-01-28 |
| US20240411147A1 (en) | 2024-12-12 |
| EP3993047A1 (en) | 2022-05-04 |
| CN114430467A (zh) | 2022-05-03 |
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