JP7803890B2 - ウェハ処理システム用の高コンダクタンス真空バルブ - Google Patents

ウェハ処理システム用の高コンダクタンス真空バルブ

Info

Publication number
JP7803890B2
JP7803890B2 JP2022581338A JP2022581338A JP7803890B2 JP 7803890 B2 JP7803890 B2 JP 7803890B2 JP 2022581338 A JP2022581338 A JP 2022581338A JP 2022581338 A JP2022581338 A JP 2022581338A JP 7803890 B2 JP7803890 B2 JP 7803890B2
Authority
JP
Japan
Prior art keywords
movable
configuration
intermediate body
valve seat
movable intermediate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022581338A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023535291A5 (cg-RX-API-DMAC10.html
JP2023535291A (ja
Inventor
ピオウクス・ガブリエル
ロネ・アラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023535291A publication Critical patent/JP2023535291A/ja
Publication of JP2023535291A5 publication Critical patent/JP2023535291A5/ja
Application granted granted Critical
Publication of JP7803890B2 publication Critical patent/JP7803890B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
    • F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Details Of Valves (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Fluid Pressure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2022581338A 2020-07-24 2021-07-23 ウェハ処理システム用の高コンダクタンス真空バルブ Active JP7803890B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062706004P 2020-07-24 2020-07-24
US62/706,004 2020-07-24
PCT/US2021/042951 WO2022020707A1 (en) 2020-07-24 2021-07-23 High-conductance vacuum valves for wafer processing systems

Publications (3)

Publication Number Publication Date
JP2023535291A JP2023535291A (ja) 2023-08-17
JP2023535291A5 JP2023535291A5 (cg-RX-API-DMAC10.html) 2024-07-22
JP7803890B2 true JP7803890B2 (ja) 2026-01-21

Family

ID=79728981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022581338A Active JP7803890B2 (ja) 2020-07-24 2021-07-23 ウェハ処理システム用の高コンダクタンス真空バルブ

Country Status (4)

Country Link
US (1) US20230360894A1 (cg-RX-API-DMAC10.html)
JP (1) JP7803890B2 (cg-RX-API-DMAC10.html)
KR (2) KR20260033638A (cg-RX-API-DMAC10.html)
WO (1) WO2022020707A1 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025080417A1 (en) * 2023-10-11 2025-04-17 Applied Materials, Inc. Smart faceplate using shape memory alloy poppet actuators

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120227830A1 (en) 2011-03-11 2012-09-13 Kabushiki Kaisha Toshiba Pressure controlling apparatus
US20130087286A1 (en) 2011-10-05 2013-04-11 Applied Materials, Inc. Symmetric plasma process chamber
JP2013094602A (ja) 2011-11-04 2013-05-20 Kobayashi Pharmaceutical Co Ltd 板状部材
US20160307743A1 (en) 2015-04-17 2016-10-20 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and rf delivery
US20170159838A1 (en) 2015-12-02 2017-06-08 Korea Aerospace Research Institute Multi-stage poppet valve

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3646292B2 (ja) * 2001-07-17 2005-05-11 学校法人金沢工業大学 物体の加工処理方法と、その装置
CN102084468B (zh) * 2008-02-08 2014-10-29 朗姆研究公司 包括横向波纹管和非接触颗粒密封的可调节间隙电容耦合rf等离子反应器
JP2009212177A (ja) * 2008-03-03 2009-09-17 Hitachi High-Technologies Corp 真空処理装置
US9879684B2 (en) * 2012-09-13 2018-01-30 Kla-Tencor Corporation Apparatus and method for shielding a controlled pressure environment
CN105445973B (zh) 2015-12-31 2019-04-30 京东方科技集团股份有限公司 一种抽真空装置及采用该抽真空装置的操作方法
JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
KR102225955B1 (ko) * 2018-04-19 2021-03-11 세메스 주식회사 기판 처리 장치 및 배기 어셈블리
JP6833784B2 (ja) * 2018-09-28 2021-02-24 芝浦メカトロニクス株式会社 プラズマ処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120227830A1 (en) 2011-03-11 2012-09-13 Kabushiki Kaisha Toshiba Pressure controlling apparatus
JP2012191070A (ja) 2011-03-11 2012-10-04 Toshiba Corp 圧力制御装置
US20130087286A1 (en) 2011-10-05 2013-04-11 Applied Materials, Inc. Symmetric plasma process chamber
JP2013094602A (ja) 2011-11-04 2013-05-20 Kobayashi Pharmaceutical Co Ltd 板状部材
US20160307743A1 (en) 2015-04-17 2016-10-20 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and rf delivery
JP2016219790A (ja) 2015-04-17 2016-12-22 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 対称なコンダクタンスおよびｒｆ供給のための垂直支持柱を備えたチェンバ
US20170159838A1 (en) 2015-12-02 2017-06-08 Korea Aerospace Research Institute Multi-stage poppet valve

Also Published As

Publication number Publication date
US20230360894A1 (en) 2023-11-09
KR20230040310A (ko) 2023-03-22
WO2022020707A1 (en) 2022-01-27
JP2023535291A (ja) 2023-08-17
KR102935842B1 (ko) 2026-03-05
KR20260033638A (ko) 2026-03-10

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