JP7791489B2 - 検査用パターンおよびそれを備えた半導体集積回路 - Google Patents

検査用パターンおよびそれを備えた半導体集積回路

Info

Publication number
JP7791489B2
JP7791489B2 JP2024536634A JP2024536634A JP7791489B2 JP 7791489 B2 JP7791489 B2 JP 7791489B2 JP 2024536634 A JP2024536634 A JP 2024536634A JP 2024536634 A JP2024536634 A JP 2024536634A JP 7791489 B2 JP7791489 B2 JP 7791489B2
Authority
JP
Japan
Prior art keywords
semiconductor integrated
pillar
test
optical
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024536634A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024023969A1 (https=
Inventor
雅之 高橋
悠介 那須
雄一郎 伊熊
健 都築
陽介 雛倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
NTT Inc USA
Original Assignee
Nippon Telegraph and Telephone Corp
NTT Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, NTT Inc USA filed Critical Nippon Telegraph and Telephone Corp
Publication of JPWO2024023969A1 publication Critical patent/JPWO2024023969A1/ja
Application granted granted Critical
Publication of JP7791489B2 publication Critical patent/JP7791489B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
JP2024536634A 2022-07-27 2022-07-27 検査用パターンおよびそれを備えた半導体集積回路 Active JP7791489B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/028926 WO2024023969A1 (ja) 2022-07-27 2022-07-27 検査用パターンおよびそれを備えた半導体集積回路

Publications (2)

Publication Number Publication Date
JPWO2024023969A1 JPWO2024023969A1 (https=) 2024-02-01
JP7791489B2 true JP7791489B2 (ja) 2025-12-24

Family

ID=89705835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024536634A Active JP7791489B2 (ja) 2022-07-27 2022-07-27 検査用パターンおよびそれを備えた半導体集積回路

Country Status (3)

Country Link
US (1) US20260033296A1 (https=)
JP (1) JP7791489B2 (https=)
WO (1) WO2024023969A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249534A (ja) 2002-02-25 2003-09-05 Matsushita Electric Ind Co Ltd 高周波回路、高周波回路装置
JP2004020708A (ja) 2002-06-13 2004-01-22 Hitachi Ltd 進行波型光変調装置
JP2005308558A (ja) 2004-04-22 2005-11-04 National Institute Of Advanced Industrial & Technology システムインパッケージ試験検査装置および試験検査方法
JP2011103334A (ja) 2009-11-10 2011-05-26 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2012023065A (ja) 2010-07-12 2012-02-02 Nippon Telegr & Teleph Corp <Ntt> 半導体素子
JP2014164272A (ja) 2013-02-27 2014-09-08 Furukawa Electric Co Ltd:The 光導波回路、および、光導波回路への電流印加方法
JP2014229632A (ja) 2013-05-17 2014-12-08 住友電気工業株式会社 半導体装置
JP2015046569A (ja) 2013-07-31 2015-03-12 マイクロン テクノロジー， インク． 半導体装置の製造方法
JP2018163216A (ja) 2017-03-24 2018-10-18 住友大阪セメント株式会社 光変調器
JP2018189699A (ja) 2017-04-28 2018-11-29 日本電信電話株式会社 光送信器
WO2022024276A1 (ja) 2020-07-29 2022-02-03 日本電信電話株式会社 半導体光変調器

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249534A (ja) 2002-02-25 2003-09-05 Matsushita Electric Ind Co Ltd 高周波回路、高周波回路装置
JP2004020708A (ja) 2002-06-13 2004-01-22 Hitachi Ltd 進行波型光変調装置
JP2005308558A (ja) 2004-04-22 2005-11-04 National Institute Of Advanced Industrial & Technology システムインパッケージ試験検査装置および試験検査方法
JP2011103334A (ja) 2009-11-10 2011-05-26 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2012023065A (ja) 2010-07-12 2012-02-02 Nippon Telegr & Teleph Corp <Ntt> 半導体素子
JP2014164272A (ja) 2013-02-27 2014-09-08 Furukawa Electric Co Ltd:The 光導波回路、および、光導波回路への電流印加方法
JP2014229632A (ja) 2013-05-17 2014-12-08 住友電気工業株式会社 半導体装置
JP2015046569A (ja) 2013-07-31 2015-03-12 マイクロン テクノロジー， インク． 半導体装置の製造方法
JP2018163216A (ja) 2017-03-24 2018-10-18 住友大阪セメント株式会社 光変調器
JP2018189699A (ja) 2017-04-28 2018-11-29 日本電信電話株式会社 光送信器
WO2022024276A1 (ja) 2020-07-29 2022-02-03 日本電信電話株式会社 半導体光変調器

Also Published As

Publication number Publication date
US20260033296A1 (en) 2026-01-29
WO2024023969A1 (ja) 2024-02-01
JPWO2024023969A1 (https=) 2024-02-01

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