JP7791167B2 - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JP7791167B2
JP7791167B2 JP2023506865A JP2023506865A JP7791167B2 JP 7791167 B2 JP7791167 B2 JP 7791167B2 JP 2023506865 A JP2023506865 A JP 2023506865A JP 2023506865 A JP2023506865 A JP 2023506865A JP 7791167 B2 JP7791167 B2 JP 7791167B2
Authority
JP
Japan
Prior art keywords
transistor
solid
imaging device
state imaging
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023506865A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022196189A1 (https=
Inventor
秀俊 大石
博章 安茂
慎一 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of JPWO2022196189A1 publication Critical patent/JPWO2022196189A1/ja
Application granted granted Critical
Publication of JP7791167B2 publication Critical patent/JP7791167B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023506865A 2021-03-15 2022-02-08 固体撮像装置 Active JP7791167B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021041892 2021-03-15
JP2021041892 2021-03-15
PCT/JP2022/004900 WO2022196189A1 (ja) 2021-03-15 2022-02-08 固体撮像装置

Publications (2)

Publication Number Publication Date
JPWO2022196189A1 JPWO2022196189A1 (https=) 2022-09-22
JP7791167B2 true JP7791167B2 (ja) 2025-12-23

Family

ID=83322205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023506865A Active JP7791167B2 (ja) 2021-03-15 2022-02-08 固体撮像装置

Country Status (6)

Country Link
US (1) US20240153981A1 (https=)
JP (1) JP7791167B2 (https=)
KR (1) KR20230156324A (https=)
CN (1) CN116982157A (https=)
DE (1) DE112022001486T5 (https=)
WO (1) WO2022196189A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020067417A1 (en) 1999-11-18 2002-06-06 Charles M. C. Tan Random access memory integrated with cmos sensors
JP2009033096A (ja) 2007-06-22 2009-02-12 Seiko Epson Corp 検出装置及び電子機器
JP2016005068A (ja) 2014-06-16 2016-01-12 ソニー株式会社 固体撮像装置および電子機器
JP2016063118A (ja) 2014-09-19 2016-04-25 株式会社東芝 撮像素子、撮像装置および半導体装置
JP2017216480A (ja) 2017-09-01 2017-12-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2020059335A1 (ja) 2018-09-18 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2020189534A1 (ja) 2019-03-15 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 撮像素子および半導体素子
WO2020262461A1 (ja) 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019130702A1 (ja) 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7315837B2 (ja) 2019-09-13 2023-07-27 横浜ゴム株式会社 重荷重用空気入りタイヤ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020067417A1 (en) 1999-11-18 2002-06-06 Charles M. C. Tan Random access memory integrated with cmos sensors
JP2009033096A (ja) 2007-06-22 2009-02-12 Seiko Epson Corp 検出装置及び電子機器
JP2016005068A (ja) 2014-06-16 2016-01-12 ソニー株式会社 固体撮像装置および電子機器
JP2016063118A (ja) 2014-09-19 2016-04-25 株式会社東芝 撮像素子、撮像装置および半導体装置
JP2017216480A (ja) 2017-09-01 2017-12-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2020059335A1 (ja) 2018-09-18 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2020189534A1 (ja) 2019-03-15 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 撮像素子および半導体素子
WO2020262461A1 (ja) 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

Also Published As

Publication number Publication date
WO2022196189A1 (ja) 2022-09-22
CN116982157A (zh) 2023-10-31
JPWO2022196189A1 (https=) 2022-09-22
KR20230156324A (ko) 2023-11-14
US20240153981A1 (en) 2024-05-09
DE112022001486T5 (de) 2024-01-25

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