JP7760704B2 - フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法 - Google Patents

フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法

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Publication number
JP7760704B2
JP7760704B2 JP2024509126A JP2024509126A JP7760704B2 JP 7760704 B2 JP7760704 B2 JP 7760704B2 JP 2024509126 A JP2024509126 A JP 2024509126A JP 2024509126 A JP2024509126 A JP 2024509126A JP 7760704 B2 JP7760704 B2 JP 7760704B2
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JP
Japan
Prior art keywords
profile
wafer
scan line
shape profile
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024509126A
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English (en)
Japanese (ja)
Other versions
JP2024534046A5 (enExample
JP2024534046A (ja
Inventor
シン チュウ，ヨン
チョウ，イェン－チュン
ヤン，ヤウ－チン
ロゥ ホン，ジン
リン，シャン－ホイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of JP2024534046A publication Critical patent/JP2024534046A/ja
Publication of JP2024534046A5 publication Critical patent/JP2024534046A5/ja
Priority to JP2025135179A priority Critical patent/JP2025166173A/ja
Application granted granted Critical
Publication of JP7760704B2 publication Critical patent/JP7760704B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
JP2024509126A 2021-08-16 2022-08-09 フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法 Active JP7760704B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025135179A JP2025166173A (ja) 2021-08-16 2025-08-14 フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163260295P 2021-08-16 2021-08-16
US63/260,295 2021-08-16
PCT/US2022/039785 WO2023022898A1 (en) 2021-08-16 2022-08-09 Systems and methods for processing semiconductor wafers using front-end processed wafer geometry metrics

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025135179A Division JP2025166173A (ja) 2021-08-16 2025-08-14 フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法

Publications (3)

Publication Number Publication Date
JP2024534046A JP2024534046A (ja) 2024-09-18
JP2024534046A5 JP2024534046A5 (enExample) 2025-08-04
JP7760704B2 true JP7760704B2 (ja) 2025-10-27

Family

ID=83188446

Family Applications (2)

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JP2024509126A Active JP7760704B2 (ja) 2021-08-16 2022-08-09 フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法
JP2025135179A Pending JP2025166173A (ja) 2021-08-16 2025-08-14 フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法

Family Applications After (1)

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JP2025135179A Pending JP2025166173A (ja) 2021-08-16 2025-08-14 フロントエンド処理されたウェハの形状測定基準を用いて半導体ウェハを処理するためのシステムおよび方法

Country Status (7)

Country Link
US (3) US12385850B2 (enExample)
EP (2) EP4388579B1 (enExample)
JP (2) JP7760704B2 (enExample)
KR (2) KR20250124260A (enExample)
CN (1) CN117999643A (enExample)
TW (1) TW202544952A (enExample)
WO (1) WO2023022898A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12385850B2 (en) * 2021-08-16 2025-08-12 Globalwafers Co., Ltd. Semiconductor wafers using front-end processed wafer global geometry metrics
US20250290745A1 (en) * 2024-03-15 2025-09-18 Tokyo Electron Limited Apparatus and method for determining the surface profile of a semiconductor substrate using a laser scanning technique
WO2026015590A1 (en) 2024-07-10 2026-01-15 Globalwafers Co., Ltd. Systems and methods for analyzing nanotopography of front-end processed semiconductor wafers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012117811A (ja) 2010-11-29 2012-06-21 Kunitoshi Nishimura ウエハ平坦度測定法
WO2020049911A1 (ja) 2018-09-05 2020-03-12 信越半導体株式会社 ウェーハ形状データ化方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
US9102033B2 (en) 2010-11-24 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for target thickness and surface profile uniformity control of multi-head chemical mechanical polishing process
WO2013178459A1 (en) 2012-05-31 2013-12-05 Asml Netherlands B.V. Gradient-based pattern and evaluation point selection
US20140078495A1 (en) 2012-09-14 2014-03-20 Stmicroelectronics, Inc. Inline metrology for attaining full wafer map of uniformity and surface charge
US9430593B2 (en) 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
US10401279B2 (en) 2013-10-29 2019-09-03 Kla-Tencor Corporation Process-induced distortion prediction and feedforward and feedback correction of overlay errors
US9645097B2 (en) * 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
KR102184033B1 (ko) 2014-06-24 2020-11-27 케이엘에이 코포레이션 반도체 프로세스 제어를 위한 패터닝된 웨이퍼 지오메트리 측정
US9870928B2 (en) 2014-10-31 2018-01-16 Veeco Precision Surface Processing Llc System and method for updating an arm scan profile through a graphical user interface
US10024654B2 (en) 2015-04-06 2018-07-17 Kla-Tencor Corporation Method and system for determining in-plane distortions in a substrate
KR102620998B1 (ko) * 2018-05-25 2024-01-04 삼성전자주식회사 기판 검사 방법, 기판 처리 방법 및 이를 수행하기 위한 기판 처리 시스템
WO2020043525A1 (en) * 2018-08-28 2020-03-05 Asml Netherlands B.V. Systems and methods of optimal metrology guidance
US12385850B2 (en) * 2021-08-16 2025-08-12 Globalwafers Co., Ltd. Semiconductor wafers using front-end processed wafer global geometry metrics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012117811A (ja) 2010-11-29 2012-06-21 Kunitoshi Nishimura ウエハ平坦度測定法
WO2020049911A1 (ja) 2018-09-05 2020-03-12 信越半導体株式会社 ウェーハ形状データ化方法

Also Published As

Publication number Publication date
EP4576178A2 (en) 2025-06-25
US12385850B2 (en) 2025-08-12
TW202329278A (zh) 2023-07-16
TW202544952A (zh) 2025-11-16
JP2025166173A (ja) 2025-11-05
EP4388579A1 (en) 2024-06-26
KR20240043802A (ko) 2024-04-03
US20230047412A1 (en) 2023-02-16
EP4576178A3 (en) 2025-09-10
US20260063568A1 (en) 2026-03-05
WO2023022898A1 (en) 2023-02-23
US12487185B2 (en) 2025-12-02
US20230050442A1 (en) 2023-02-16
JP2024534046A (ja) 2024-09-18
KR20250124260A (ko) 2025-08-19
CN117999643A (zh) 2024-05-07
EP4388579B1 (en) 2025-06-25

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