JP7754107B2 - 合成単結晶ダイヤモンド及びその製造方法 - Google Patents

合成単結晶ダイヤモンド及びその製造方法

Info

Publication number
JP7754107B2
JP7754107B2 JP2022560786A JP2022560786A JP7754107B2 JP 7754107 B2 JP7754107 B2 JP 7754107B2 JP 2022560786 A JP2022560786 A JP 2022560786A JP 2022560786 A JP2022560786 A JP 2022560786A JP 7754107 B2 JP7754107 B2 JP 7754107B2
Authority
JP
Japan
Prior art keywords
single crystal
ppm
diamond
synthetic single
crystal diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022560786A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022097641A5 (https=
JPWO2022097641A1 (https=
Inventor
均 角谷
真和 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of JPWO2022097641A1 publication Critical patent/JPWO2022097641A1/ja
Publication of JPWO2022097641A5 publication Critical patent/JPWO2022097641A5/ja
Application granted granted Critical
Publication of JP7754107B2 publication Critical patent/JP7754107B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/21—Attrition-index or crushing strength of granulates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2022560786A 2020-11-04 2021-11-02 合成単結晶ダイヤモンド及びその製造方法 Active JP7754107B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020184564 2020-11-04
JP2020184564 2020-11-04
PCT/JP2021/040399 WO2022097641A1 (ja) 2020-11-04 2021-11-02 合成単結晶ダイヤモンド及びその製造方法

Publications (3)

Publication Number Publication Date
JPWO2022097641A1 JPWO2022097641A1 (https=) 2022-05-12
JPWO2022097641A5 JPWO2022097641A5 (https=) 2024-08-02
JP7754107B2 true JP7754107B2 (ja) 2025-10-15

Family

ID=81457212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022560786A Active JP7754107B2 (ja) 2020-11-04 2021-11-02 合成単結晶ダイヤモンド及びその製造方法

Country Status (3)

Country Link
US (1) US20230383436A1 (https=)
JP (1) JP7754107B2 (https=)
WO (1) WO2022097641A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121152905A (zh) * 2023-04-03 2025-12-16 住友电气工业株式会社 合成单晶金刚石、合成单晶金刚石的制造方法以及红外光学部件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012530676A (ja) 2009-06-26 2012-12-06 エレメント シックス リミテッド ファンシーな橙色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品
JP2018197178A (ja) 2017-05-24 2018-12-13 住友電気工業株式会社 多結晶ダイヤモンドおよびその製造方法、スクライブツール、スクライブホイール、ドレッサー、回転工具、ウォータージェット用オリフィス、伸線ダイス、切削工具、電極ならびに多結晶ダイヤモンドを用いた加工方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457475B (zh) * 2008-05-05 2014-10-21 Carnegie Inst Of Washington 超韌性單晶型摻硼鑽石
US9255009B2 (en) * 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012530676A (ja) 2009-06-26 2012-12-06 エレメント シックス リミテッド ファンシーな橙色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品
JP2015155377A (ja) 2009-06-26 2015-08-27 エレメント シックス リミテッド 単結晶ｃｖｄダイヤモンドの処理方法及び得られた製品
JP2018197178A (ja) 2017-05-24 2018-12-13 住友電気工業株式会社 多結晶ダイヤモンドおよびその製造方法、スクライブツール、スクライブホイール、ドレッサー、回転工具、ウォータージェット用オリフィス、伸線ダイス、切削工具、電極ならびに多結晶ダイヤモンドを用いた加工方法

Also Published As

Publication number Publication date
WO2022097641A1 (ja) 2022-05-12
JPWO2022097641A1 (https=) 2022-05-12
US20230383436A1 (en) 2023-11-30

Similar Documents

Publication Publication Date Title
JP7462419B2 (ja) 合成単結晶ダイヤモンド
JP7517347B2 (ja) 合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法
KR20130041884A (ko) 다이아몬드 공구
TWI896695B (zh) 合成單晶鑽石及其製造方法
EP3699329A1 (en) Synthetic single-crystal diamond, tool, and production method for synthetic single-crystal diamond
JP7722370B2 (ja) 合成単結晶ダイヤモンド及びその製造方法
WO2017198662A1 (en) Diamond tool piece
JP2017007887A (ja) ダイヤモンド単結晶、工具およびダイヤモンド単結晶の製造方法
WO2022264706A1 (ja) 合成単結晶ダイヤモンド及びその製造方法
JP7754107B2 (ja) 合成単結晶ダイヤモンド及びその製造方法
JP2022139094A (ja) 合成単結晶ダイヤモンド及びその製造方法
TW202314068A (zh) 合成單晶鑽石及其製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240725

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240725

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250902

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250915

R150 Certificate of patent or registration of utility model

Ref document number: 7754107

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150