JPWO2022097641A1 - - Google Patents

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Publication number
JPWO2022097641A1
JPWO2022097641A1 JP2022560786A JP2022560786A JPWO2022097641A1 JP WO2022097641 A1 JPWO2022097641 A1 JP WO2022097641A1 JP 2022560786 A JP2022560786 A JP 2022560786A JP 2022560786 A JP2022560786 A JP 2022560786A JP WO2022097641 A1 JPWO2022097641 A1 JP WO2022097641A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022560786A
Other languages
Japanese (ja)
Other versions
JPWO2022097641A5 (https=
JP7754107B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed filed Critical
Publication of JPWO2022097641A1 publication Critical patent/JPWO2022097641A1/ja
Publication of JPWO2022097641A5 publication Critical patent/JPWO2022097641A5/ja
Application granted granted Critical
Publication of JP7754107B2 publication Critical patent/JP7754107B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/21—Attrition-index or crushing strength of granulates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2022560786A 2020-11-04 2021-11-02 合成単結晶ダイヤモンド及びその製造方法 Active JP7754107B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020184564 2020-11-04
JP2020184564 2020-11-04
PCT/JP2021/040399 WO2022097641A1 (ja) 2020-11-04 2021-11-02 合成単結晶ダイヤモンド及びその製造方法

Publications (3)

Publication Number Publication Date
JPWO2022097641A1 true JPWO2022097641A1 (https=) 2022-05-12
JPWO2022097641A5 JPWO2022097641A5 (https=) 2024-08-02
JP7754107B2 JP7754107B2 (ja) 2025-10-15

Family

ID=81457212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022560786A Active JP7754107B2 (ja) 2020-11-04 2021-11-02 合成単結晶ダイヤモンド及びその製造方法

Country Status (3)

Country Link
US (1) US20230383436A1 (https=)
JP (1) JP7754107B2 (https=)
WO (1) WO2022097641A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121152905A (zh) * 2023-04-03 2025-12-16 住友电气工业株式会社 合成单晶金刚石、合成单晶金刚石的制造方法以及红外光学部件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012530676A (ja) * 2009-06-26 2012-12-06 エレメント シックス リミテッド ファンシーな橙色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品
JP2018197178A (ja) * 2017-05-24 2018-12-13 住友電気工業株式会社 多結晶ダイヤモンドおよびその製造方法、スクライブツール、スクライブホイール、ドレッサー、回転工具、ウォータージェット用オリフィス、伸線ダイス、切削工具、電極ならびに多結晶ダイヤモンドを用いた加工方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457475B (zh) * 2008-05-05 2014-10-21 Carnegie Inst Of Washington 超韌性單晶型摻硼鑽石
US9255009B2 (en) * 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012530676A (ja) * 2009-06-26 2012-12-06 エレメント シックス リミテッド ファンシーな橙色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品
JP2015155377A (ja) * 2009-06-26 2015-08-27 エレメント シックス リミテッド 単結晶ｃｖｄダイヤモンドの処理方法及び得られた製品
JP2018197178A (ja) * 2017-05-24 2018-12-13 住友電気工業株式会社 多結晶ダイヤモンドおよびその製造方法、スクライブツール、スクライブホイール、ドレッサー、回転工具、ウォータージェット用オリフィス、伸線ダイス、切削工具、電極ならびに多結晶ダイヤモンドを用いた加工方法

Also Published As

Publication number Publication date
WO2022097641A1 (ja) 2022-05-12
US20230383436A1 (en) 2023-11-30
JP7754107B2 (ja) 2025-10-15

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