JP7706459B2 - トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ - Google Patents

トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ Download PDF

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Publication number
JP7706459B2
JP7706459B2 JP2022546345A JP2022546345A JP7706459B2 JP 7706459 B2 JP7706459 B2 JP 7706459B2 JP 2022546345 A JP2022546345 A JP 2022546345A JP 2022546345 A JP2022546345 A JP 2022546345A JP 7706459 B2 JP7706459 B2 JP 7706459B2
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Prior art keywords
coolant
plenum
region
dielectric window
channel
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JP2022546345A
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English (en)
Japanese (ja)
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JP2023511745A5 (https=
JPWO2021154590A5 (https=
JP2023511745A (ja
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イッサヴィ・ヘンリ
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Lam Research Corp
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Lam Research Corp
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Priority to JP2025111185A priority Critical patent/JP2025148377A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2022546345A 2020-01-31 2021-01-22 トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ Active JP7706459B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025111185A JP2025148377A (ja) 2020-01-31 2025-07-01 トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062968305P 2020-01-31 2020-01-31
US62/968,305 2020-01-31
PCT/US2021/014505 WO2021154590A1 (en) 2020-01-31 2021-01-22 Plenum assemblies for cooling transformer coupled plasma windows

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025111185A Division JP2025148377A (ja) 2020-01-31 2025-07-01 トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ

Publications (4)

Publication Number Publication Date
JP2023511745A JP2023511745A (ja) 2023-03-22
JP2023511745A5 JP2023511745A5 (https=) 2024-11-19
JPWO2021154590A5 JPWO2021154590A5 (https=) 2024-11-19
JP7706459B2 true JP7706459B2 (ja) 2025-07-11

Family

ID=77078296

Family Applications (2)

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JP2022546345A Active JP7706459B2 (ja) 2020-01-31 2021-01-22 トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ
JP2025111185A Pending JP2025148377A (ja) 2020-01-31 2025-07-01 トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025111185A Pending JP2025148377A (ja) 2020-01-31 2025-07-01 トランス結合型プラズマウィンドウ冷却用プレナムアセンブリ

Country Status (5)

Country Link
US (2) US12261018B2 (https=)
JP (2) JP7706459B2 (https=)
KR (2) KR20260019675A (https=)
CN (1) CN115039197A (https=)
WO (1) WO2021154590A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240297017A1 (en) * 2023-03-01 2024-09-05 Shine Technologies, Llc Jet impingement cooling assembly for plasma windows positioned in a beam accelerator system
US20250087505A1 (en) * 2023-09-12 2025-03-13 Applied Materials, Inc. Microwave annealing for low thermal budget applications
WO2025122269A1 (en) * 2023-12-04 2025-06-12 Lam Research Corporation Assembled window for processing chamber
CN121662693A (zh) * 2024-08-30 2026-03-13 北京北方华创微电子装备有限公司 半导体工艺腔室、半导体工艺设备及介质窗的温控方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119657A (ja) 2009-10-27 2011-06-16 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2015531163A (ja) 2012-07-20 2015-10-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 対称フローチャンバを有する対称誘導結合プラズマ源
US20170032931A1 (en) 2014-02-19 2017-02-02 Lam Research Corporation Gas plenum arrangement for improving etch non-uniformity in transformer-coupled plasma systems
US20170103875A1 (en) 2011-10-07 2017-04-13 Lam Research Corporation Temperature Control in RF Chamber with Heater and Air Amplifier
US20180156489A1 (en) 2013-07-17 2018-06-07 Lam Research Corporation Air Cooled Faraday Shield and Methods for Using the Same
US20190148118A1 (en) 2017-11-15 2019-05-16 Lam Research Corporation Multi-Zone Cooling Of Plasma Heated Window

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8741097B2 (en) 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US9313872B2 (en) 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8608903B2 (en) 2009-10-27 2013-12-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US9978565B2 (en) * 2011-10-07 2018-05-22 Lam Research Corporation Systems for cooling RF heated chamber components
TWI623960B (zh) * 2013-03-27 2018-05-11 Lam Research Corporation 半導體製造設備及其處理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119657A (ja) 2009-10-27 2011-06-16 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US20170103875A1 (en) 2011-10-07 2017-04-13 Lam Research Corporation Temperature Control in RF Chamber with Heater and Air Amplifier
JP2015531163A (ja) 2012-07-20 2015-10-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 対称フローチャンバを有する対称誘導結合プラズマ源
US20180156489A1 (en) 2013-07-17 2018-06-07 Lam Research Corporation Air Cooled Faraday Shield and Methods for Using the Same
US20170032931A1 (en) 2014-02-19 2017-02-02 Lam Research Corporation Gas plenum arrangement for improving etch non-uniformity in transformer-coupled plasma systems
US20190148118A1 (en) 2017-11-15 2019-05-16 Lam Research Corporation Multi-Zone Cooling Of Plasma Heated Window

Also Published As

Publication number Publication date
CN115039197A (zh) 2022-09-09
KR102925154B1 (ko) 2026-02-06
WO2021154590A1 (en) 2021-08-05
JP2023511745A (ja) 2023-03-22
KR20260019675A (ko) 2026-02-10
US20230065203A1 (en) 2023-03-02
US20250218724A1 (en) 2025-07-03
JP2025148377A (ja) 2025-10-07
KR20220134680A (ko) 2022-10-05
US12261018B2 (en) 2025-03-25

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