CN115039197A - 用于冷却变压器耦合等离子体窗的充气室组件 - Google Patents
用于冷却变压器耦合等离子体窗的充气室组件 Download PDFInfo
- Publication number
- CN115039197A CN115039197A CN202180012139.6A CN202180012139A CN115039197A CN 115039197 A CN115039197 A CN 115039197A CN 202180012139 A CN202180012139 A CN 202180012139A CN 115039197 A CN115039197 A CN 115039197A
- Authority
- CN
- China
- Prior art keywords
- coolant
- plenum
- dielectric window
- channel
- recessed area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062968305P | 2020-01-31 | 2020-01-31 | |
| US62/968,305 | 2020-01-31 | ||
| PCT/US2021/014505 WO2021154590A1 (en) | 2020-01-31 | 2021-01-22 | Plenum assemblies for cooling transformer coupled plasma windows |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115039197A true CN115039197A (zh) | 2022-09-09 |
Family
ID=77078296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180012139.6A Pending CN115039197A (zh) | 2020-01-31 | 2021-01-22 | 用于冷却变压器耦合等离子体窗的充气室组件 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12261018B2 (https=) |
| JP (2) | JP7706459B2 (https=) |
| KR (2) | KR20260019675A (https=) |
| CN (1) | CN115039197A (https=) |
| WO (1) | WO2021154590A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026045861A1 (zh) * | 2024-08-30 | 2026-03-05 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室、半导体工艺设备及介质窗的温控方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240297017A1 (en) * | 2023-03-01 | 2024-09-05 | Shine Technologies, Llc | Jet impingement cooling assembly for plasma windows positioned in a beam accelerator system |
| US20250087505A1 (en) * | 2023-09-12 | 2025-03-13 | Applied Materials, Inc. | Microwave annealing for low thermal budget applications |
| WO2025122269A1 (en) * | 2023-12-04 | 2025-06-12 | Lam Research Corporation | Assembled window for processing chamber |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8741097B2 (en) | 2009-10-27 | 2014-06-03 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US9313872B2 (en) | 2009-10-27 | 2016-04-12 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP5851681B2 (ja) | 2009-10-27 | 2016-02-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US8608903B2 (en) | 2009-10-27 | 2013-12-17 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US9530656B2 (en) * | 2011-10-07 | 2016-12-27 | Lam Research Corporation | Temperature control in RF chamber with heater and air amplifier |
| US9978565B2 (en) * | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
| US9745663B2 (en) | 2012-07-20 | 2017-08-29 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with symmetrical flow chamber |
| TWI623960B (zh) * | 2013-03-27 | 2018-05-11 | Lam Research Corporation | 半導體製造設備及其處理方法 |
| US9885493B2 (en) * | 2013-07-17 | 2018-02-06 | Lam Research Corporation | Air cooled faraday shield and methods for using the same |
| US9484214B2 (en) * | 2014-02-19 | 2016-11-01 | Lam Research Corporation | Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma |
| US11538666B2 (en) | 2017-11-15 | 2022-12-27 | Lam Research Corporation | Multi-zone cooling of plasma heated window |
-
2021
- 2021-01-22 CN CN202180012139.6A patent/CN115039197A/zh active Pending
- 2021-01-22 KR KR1020267003749A patent/KR20260019675A/ko active Pending
- 2021-01-22 JP JP2022546345A patent/JP7706459B2/ja active Active
- 2021-01-22 KR KR1020227029894A patent/KR102925154B1/ko active Active
- 2021-01-22 US US17/795,356 patent/US12261018B2/en active Active
- 2021-01-22 WO PCT/US2021/014505 patent/WO2021154590A1/en not_active Ceased
-
2025
- 2025-03-21 US US19/086,292 patent/US20250218724A1/en active Pending
- 2025-07-01 JP JP2025111185A patent/JP2025148377A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026045861A1 (zh) * | 2024-08-30 | 2026-03-05 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室、半导体工艺设备及介质窗的温控方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102925154B1 (ko) | 2026-02-06 |
| WO2021154590A1 (en) | 2021-08-05 |
| JP2023511745A (ja) | 2023-03-22 |
| KR20260019675A (ko) | 2026-02-10 |
| US20230065203A1 (en) | 2023-03-02 |
| US20250218724A1 (en) | 2025-07-03 |
| JP2025148377A (ja) | 2025-10-07 |
| KR20220134680A (ko) | 2022-10-05 |
| US12261018B2 (en) | 2025-03-25 |
| JP7706459B2 (ja) | 2025-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |