JP7625540B2 - マルチステーション半導体処理における独立して調整可能な流路コンダクタンス - Google Patents

マルチステーション半導体処理における独立して調整可能な流路コンダクタンス Download PDF

Info

Publication number
JP7625540B2
JP7625540B2 JP2021572275A JP2021572275A JP7625540B2 JP 7625540 B2 JP7625540 B2 JP 7625540B2 JP 2021572275 A JP2021572275 A JP 2021572275A JP 2021572275 A JP2021572275 A JP 2021572275A JP 7625540 B2 JP7625540 B2 JP 7625540B2
Authority
JP
Japan
Prior art keywords
temperature
flow
valve
flow path
control unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021572275A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022536293A (ja
JP2022536293A5 (enExample
Inventor
ロバーツ・マイケル・フィリップ
ウィリアムズ・ブライアン
フアレス・フランシスコ・ジェイ．
バッツァー・レイチェル・イー．
チャンドラセカーラン・ラメシュ
フィリップス・リチャード
ノヤ・ヤン
ウォマック・ジョセフ・エル．
リー・ミン
カン・ジュン
ホン・ツー
マレヌー・スカイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2022536293A publication Critical patent/JP2022536293A/ja
Publication of JP2022536293A5 publication Critical patent/JP2022536293A5/ja
Priority to JP2025008812A priority Critical patent/JP2025061569A/ja
Application granted granted Critical
Publication of JP7625540B2 publication Critical patent/JP7625540B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2021572275A 2019-06-07 2020-05-22 マルチステーション半導体処理における独立して調整可能な流路コンダクタンス Active JP7625540B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025008812A JP2025061569A (ja) 2019-06-07 2025-01-22 マルチステーション半導体処理における独立して調整可能な流路コンダクタンス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962858570P 2019-06-07 2019-06-07
US62/858,570 2019-06-07
PCT/US2020/070072 WO2020247966A1 (en) 2019-06-07 2020-05-22 Independently adjustable flowpath conductance in multi-station semiconductor processing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025008812A Division JP2025061569A (ja) 2019-06-07 2025-01-22 マルチステーション半導体処理における独立して調整可能な流路コンダクタンス

Publications (3)

Publication Number Publication Date
JP2022536293A JP2022536293A (ja) 2022-08-15
JP2022536293A5 JP2022536293A5 (enExample) 2023-05-24
JP7625540B2 true JP7625540B2 (ja) 2025-02-03

Family

ID=73651952

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021572275A Active JP7625540B2 (ja) 2019-06-07 2020-05-22 マルチステーション半導体処理における独立して調整可能な流路コンダクタンス
JP2025008812A Pending JP2025061569A (ja) 2019-06-07 2025-01-22 マルチステーション半導体処理における独立して調整可能な流路コンダクタンス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025008812A Pending JP2025061569A (ja) 2019-06-07 2025-01-22 マルチステーション半導体処理における独立して調整可能な流路コンダクタンス

Country Status (6)

Country Link
US (2) US20220228263A1 (enExample)
JP (2) JP7625540B2 (enExample)
KR (2) KR20260036050A (enExample)
CN (2) CN118098919A (enExample)
TW (2) TWI842908B (enExample)
WO (1) WO2020247966A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022067016A1 (en) * 2020-09-28 2022-03-31 Lam Research Corporation Compact modular gas distribution plumbing and heating system for multi-station deposition modules
CN112908902B (zh) * 2021-02-10 2024-04-09 长江存储科技有限责任公司 半导体器件处理设备及处理方法
KR20240063981A (ko) * 2021-09-21 2024-05-10 램 리써치 코포레이션 플로우 제한기들의 업스트림의 가열기들을 사용하는 복수의 스테이션들로의 가스 플로우 밸런싱
CN113862647A (zh) * 2021-09-28 2021-12-31 长江存储科技有限责任公司 一种薄膜沉积设备及方法
WO2023102325A1 (en) * 2021-12-01 2023-06-08 Lam Research Corporation Dry process tool with adjustable flow valve
CN118382919A (zh) * 2021-12-13 2024-07-23 朗姆研究公司 用于平衡流向衬底处理系统的多个站的气体流量的阀系统
CN117467944A (zh) * 2022-07-22 2024-01-30 成都高真科技有限公司 一种晶圆的气体喷洒结构及喷洒方法
CN120752750A (zh) * 2023-02-24 2025-10-03 朗姆研究公司 热控室断接件
CN122396816A (zh) * 2023-12-12 2026-07-14 朗姆研究公司 通过清扫使颗粒减少
US20260049396A1 (en) * 2024-08-14 2026-02-19 Applied Materials, Inc. Multi-station substrate processing chamber with precise temperature and flow control
WO2026161740A1 (en) * 2025-01-25 2026-07-30 Lam Research Corporation Electrical isolation in semiconductor processing apparatus
CN120985056B (zh) * 2025-08-22 2026-07-28 江苏博联硕焊接技术有限公司 一种带水冷结构的真空扩散焊压板
CN121676812A (zh) * 2026-02-09 2026-03-17 聚变新能(安徽)有限公司 管道结构的温度调控装置和管道结构的温度调控方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020188376A1 (en) 2000-08-18 2002-12-12 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US20110236594A1 (en) 2010-03-25 2011-09-29 Jason Haverkamp In-Situ Deposition of Film Stacks
US20150011095A1 (en) 2013-07-03 2015-01-08 Lam Research Corporation Chemical deposition apparatus having conductance control
JP2016046524A (ja) 2014-08-22 2016-04-04 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッドの能動加熱および／またはペデスタルの冷却によって低温ａｌｄシステム内で安定した蒸着速度制御を行うための方法および装置
JP2017224816A (ja) 2016-06-17 2017-12-21 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 膜プロフィール調整のためのシャワーヘッドカーテンガス方法及びシャワーヘッドガスカーテンシステム

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644986B2 (ja) * 1988-05-08 1994-06-15 忠弘 大見 プロセスガス供給配管装置
JPH07122500A (ja) * 1993-10-28 1995-05-12 Fujitsu Ltd ガス機器及びこれを利用したガス供給装置
US6352594B2 (en) * 1997-08-11 2002-03-05 Torrex Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US20030101938A1 (en) * 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
KR101004222B1 (ko) * 2001-02-09 2010-12-24 도쿄엘렉트론가부시키가이샤 성막 장치
US20020129768A1 (en) * 2001-03-15 2002-09-19 Carpenter Craig M. Chemical vapor deposition apparatuses and deposition methods
US6482331B2 (en) * 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
KR100481008B1 (ko) * 2002-06-03 2005-04-07 주성엔지니어링(주) 화학기상증착공정용 기체 가열장치 및 이를 이용한반도체소자 제조방법
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7376520B2 (en) * 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
JP4605790B2 (ja) * 2006-06-27 2011-01-05 株式会社フジキン 原料の気化供給装置及びこれに用いる圧力自動調整装置。
US7993457B1 (en) * 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
US8137468B2 (en) * 2008-03-17 2012-03-20 Applied Materials, Inc. Heated valve manifold for ampoule
KR101412034B1 (ko) * 2008-06-18 2014-06-26 주식회사 원익아이피에스 가스분사조립체 및 이를 이용한 박막증착장치
JP5544697B2 (ja) * 2008-09-30 2014-07-09 東京エレクトロン株式会社 成膜装置
US8017527B1 (en) * 2008-12-16 2011-09-13 Novellus Systems, Inc. Method and apparatus to reduce defects in liquid based PECVD films
US20130316094A1 (en) * 2012-05-25 2013-11-28 Novellus Systems, Inc. Rf-powered, temperature-controlled gas diffuser
US9797042B2 (en) * 2014-05-15 2017-10-24 Lam Research Corporation Single ALD cycle thickness control in multi-station substrate deposition systems
US9263350B2 (en) * 2014-06-03 2016-02-16 Lam Research Corporation Multi-station plasma reactor with RF balancing
US9960009B2 (en) * 2015-07-17 2018-05-01 Lam Research Corporation Methods and systems for determining a fault in a gas heater channel
US10879046B2 (en) * 2015-09-11 2020-12-29 Applied Materials, Inc. Substrate support with real time force and film stress control
US20170314129A1 (en) * 2016-04-29 2017-11-02 Lam Research Corporation Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system
EP3497259A1 (en) * 2016-08-09 2019-06-19 Singulus Technologies AG System and method for gas phase deposition
US11926894B2 (en) * 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US10604841B2 (en) * 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10947621B2 (en) * 2017-10-23 2021-03-16 Applied Materials, Inc. Low vapor pressure chemical delivery
WO2020101935A1 (en) * 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020188376A1 (en) 2000-08-18 2002-12-12 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US20110236594A1 (en) 2010-03-25 2011-09-29 Jason Haverkamp In-Situ Deposition of Film Stacks
US20150011095A1 (en) 2013-07-03 2015-01-08 Lam Research Corporation Chemical deposition apparatus having conductance control
JP2016046524A (ja) 2014-08-22 2016-04-04 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッドの能動加熱および／またはペデスタルの冷却によって低温ａｌｄシステム内で安定した蒸着速度制御を行うための方法および装置
JP2017224816A (ja) 2016-06-17 2017-12-21 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 膜プロフィール調整のためのシャワーヘッドカーテンガス方法及びシャワーヘッドガスカーテンシステム

Also Published As

Publication number Publication date
TWI880718B (zh) 2025-04-11
KR20220018591A (ko) 2022-02-15
US20220228263A1 (en) 2022-07-21
CN118098919A (zh) 2024-05-28
KR102937147B1 (ko) 2026-03-09
JP2022536293A (ja) 2022-08-15
TW202441738A (zh) 2024-10-16
TW202114095A (zh) 2021-04-01
CN114207767A (zh) 2022-03-18
CN114207767B (zh) 2024-01-30
KR20260036050A (ko) 2026-03-13
TWI842908B (zh) 2024-05-21
US20260043135A1 (en) 2026-02-12
JP2025061569A (ja) 2025-04-10
WO2020247966A1 (en) 2020-12-10

Similar Documents

Publication Publication Date Title
KR102937147B1 (ko) 멀티 스테이션 반도체 프로세싱에서 독립적으로 조정 가능한 플로우 경로 컨덕턴스
KR102662595B1 (ko) 증착 내내 웨이퍼 온도를 가변함으로써 계면 반응들 억제
KR102333806B1 (ko) 기생 플라즈마를 억제하고 웨이퍼 내 불균일성을 감소시키기 위한 시스템들 및 방법들
US20160056032A1 (en) Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling
JP7671696B2 (ja) 独立して調節可能な台座を用いるマルチステーション半導体処理
WO2019241018A1 (en) Substrate processing chamber with showerhead having cooled faceplate
TWI860348B (zh) 具有對於晶圓之空間性可調諧射頻耦合的靜電卡盤
US12215420B2 (en) Pedestal thermal profile tuning using multiple heated zones and thermal voids
WO2020068546A2 (en) Multiplexed high tcr based ampoule heaters

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230516

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230516

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240522

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240618

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240917

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241224

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250122

R150 Certificate of patent or registration of utility model

Ref document number: 7625540

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150