JP7614449B2 - 窒化物半導体紫外線発光素子 - Google Patents

窒化物半導体紫外線発光素子 Download PDF

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JP7614449B2
JP7614449B2 JP2024515747A JP2024515747A JP7614449B2 JP 7614449 B2 JP7614449 B2 JP 7614449B2 JP 2024515747 A JP2024515747 A JP 2024515747A JP 2024515747 A JP2024515747 A JP 2024515747A JP 7614449 B2 JP7614449 B2 JP 7614449B2
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JPWO2023203599A5 (enrdf_load_stackoverflow
JPWO2023203599A1 (enrdf_load_stackoverflow
Inventor
陽祐 長澤
光 平野
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2024515747A 2022-04-18 2022-04-18 窒化物半導体紫外線発光素子 Active JP7614449B2 (ja)

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PCT/JP2022/018020 WO2023203599A1 (ja) 2022-04-18 2022-04-18 窒化物半導体紫外線発光素子

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JPWO2023203599A1 JPWO2023203599A1 (enrdf_load_stackoverflow) 2023-10-26
JPWO2023203599A5 JPWO2023203599A5 (enrdf_load_stackoverflow) 2024-07-31
JP7614449B2 true JP7614449B2 (ja) 2025-01-15

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JP (1) JP7614449B2 (enrdf_load_stackoverflow)
TW (1) TW202343828A (enrdf_load_stackoverflow)
WO (1) WO2023203599A1 (enrdf_load_stackoverflow)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
WO2021260850A1 (ja) 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2021260849A1 (ja) 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022009306A1 (ja) 2020-07-07 2022-01-13 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2022038769A1 (ja) 2020-08-21 2022-02-24 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022059125A1 (ja) 2020-09-17 2022-03-24 創光科学株式会社 窒化物半導体紫外線発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
WO2021260850A1 (ja) 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2021260849A1 (ja) 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022009306A1 (ja) 2020-07-07 2022-01-13 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2022038769A1 (ja) 2020-08-21 2022-02-24 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022059125A1 (ja) 2020-09-17 2022-03-24 創光科学株式会社 窒化物半導体紫外線発光素子

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WO2023203599A1 (ja) 2023-10-26
TW202343828A (zh) 2023-11-01
JPWO2023203599A1 (enrdf_load_stackoverflow) 2023-10-26

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