JPWO2023203599A1 - - Google Patents

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Publication number
JPWO2023203599A1
JPWO2023203599A1 JP2024515747A JP2024515747A JPWO2023203599A1 JP WO2023203599 A1 JPWO2023203599 A1 JP WO2023203599A1 JP 2024515747 A JP2024515747 A JP 2024515747A JP 2024515747 A JP2024515747 A JP 2024515747A JP WO2023203599 A1 JPWO2023203599 A1 JP WO2023203599A1
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JP
Japan
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JP2024515747A
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Japanese (ja)
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JP7614449B2 (ja
JPWO2023203599A5 (enrdf_load_stackoverflow
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Publication of JPWO2023203599A1 publication Critical patent/JPWO2023203599A1/ja
Publication of JPWO2023203599A5 publication Critical patent/JPWO2023203599A5/ja
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Publication of JP7614449B2 publication Critical patent/JP7614449B2/ja
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
JP2024515747A 2022-04-18 2022-04-18 窒化物半導体紫外線発光素子 Active JP7614449B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/018020 WO2023203599A1 (ja) 2022-04-18 2022-04-18 窒化物半導体紫外線発光素子

Publications (3)

Publication Number Publication Date
JPWO2023203599A1 true JPWO2023203599A1 (enrdf_load_stackoverflow) 2023-10-26
JPWO2023203599A5 JPWO2023203599A5 (enrdf_load_stackoverflow) 2024-07-31
JP7614449B2 JP7614449B2 (ja) 2025-01-15

Family

ID=88419391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024515747A Active JP7614449B2 (ja) 2022-04-18 2022-04-18 窒化物半導体紫外線発光素子

Country Status (3)

Country Link
JP (1) JP7614449B2 (enrdf_load_stackoverflow)
TW (1) TW202343828A (enrdf_load_stackoverflow)
WO (1) WO2023203599A1 (enrdf_load_stackoverflow)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
WO2021260850A1 (ja) * 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2021260849A1 (ja) * 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022009306A1 (ja) * 2020-07-07 2022-01-13 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2022038769A1 (ja) * 2020-08-21 2022-02-24 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022059125A1 (ja) * 2020-09-17 2022-03-24 創光科学株式会社 窒化物半導体紫外線発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
WO2021260850A1 (ja) * 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2021260849A1 (ja) * 2020-06-24 2021-12-30 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022009306A1 (ja) * 2020-07-07 2022-01-13 創光科学株式会社 窒化物半導体紫外線発光素子及びその製造方法
WO2022038769A1 (ja) * 2020-08-21 2022-02-24 創光科学株式会社 窒化物半導体紫外線発光素子
WO2022059125A1 (ja) * 2020-09-17 2022-03-24 創光科学株式会社 窒化物半導体紫外線発光素子

Also Published As

Publication number Publication date
WO2023203599A1 (ja) 2023-10-26
TW202343828A (zh) 2023-11-01
JP7614449B2 (ja) 2025-01-15

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