JP7564092B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7564092B2
JP7564092B2 JP2021510569A JP2021510569A JP7564092B2 JP 7564092 B2 JP7564092 B2 JP 7564092B2 JP 2021510569 A JP2021510569 A JP 2021510569A JP 2021510569 A JP2021510569 A JP 2021510569A JP 7564092 B2 JP7564092 B2 JP 7564092B2
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Prior art keywords
transistor
oxide
insulator
conductor
drain
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JP2021510569A
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Japanese (ja)
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JPWO2020201860A5 (ja
JPWO2020201860A1 (https=
Inventor
広樹 井上
宗広 上妻
健 青木
修次 深井
史佳 赤澤
祥 長尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2020201860A1 publication Critical patent/JPWO2020201860A1/ja
Publication of JPWO2020201860A5 publication Critical patent/JPWO2020201860A5/ja
Priority to JP2024167141A priority Critical patent/JP7767543B2/ja
Application granted granted Critical
Publication of JP7564092B2 publication Critical patent/JP7564092B2/ja
Priority to JP2025182217A priority patent/JP2026003064A/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
JP2021510569A 2019-03-29 2020-03-12 半導体装置 Active JP7564092B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024167141A JP7767543B2 (ja) 2019-03-29 2024-09-26 半導体装置
JP2025182217A JP2026003064A (ja) 2019-03-29 2025-10-29 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019066785 2019-03-29
JP2019066785 2019-03-29
PCT/IB2020/052186 WO2020201860A1 (ja) 2019-03-29 2020-03-12 単極性トランジスタを用いて構成された論理回路、および、半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024167141A Division JP7767543B2 (ja) 2019-03-29 2024-09-26 半導体装置

Publications (3)

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JPWO2020201860A1 JPWO2020201860A1 (https=) 2020-10-08
JPWO2020201860A5 JPWO2020201860A5 (ja) 2023-03-06
JP7564092B2 true JP7564092B2 (ja) 2024-10-08

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JP2021510569A Active JP7564092B2 (ja) 2019-03-29 2020-03-12 半導体装置
JP2024167141A Active JP7767543B2 (ja) 2019-03-29 2024-09-26 半導体装置
JP2025182217A Pending JP2026003064A (ja) 2019-03-29 2025-10-29 半導体装置

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JP2024167141A Active JP7767543B2 (ja) 2019-03-29 2024-09-26 半導体装置
JP2025182217A Pending JP2026003064A (ja) 2019-03-29 2025-10-29 半導体装置

Country Status (3)

Country Link
US (1) US11777502B2 (https=)
JP (3) JP7564092B2 (https=)
WO (1) WO2020201860A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7554673B2 (ja) * 2018-12-20 2024-09-20 株式会社半導体エネルギー研究所 半導体装置
JP7578594B2 (ja) * 2019-07-05 2024-11-06 株式会社半導体エネルギー研究所 半導体装置、蓄電装置および半導体装置の動作方法
CN116345891A (zh) * 2021-12-22 2023-06-27 群创光电股份有限公司 电压转换器电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115758A (ja) 2001-10-03 2003-04-18 Nec Corp サンプリングレベル変換回路と２相及び多相展開回路並びに表示装置

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US4857984A (en) * 1984-12-26 1989-08-15 Hughes Aircraft Company Three-terminal MOS integrated circuit switch
JPS61264820A (ja) 1985-05-20 1986-11-22 Fujitsu Ltd ダイナミツク論理回路
US5694061A (en) 1995-03-27 1997-12-02 Casio Computer Co., Ltd. Semiconductor device having same conductive type MIS transistors, a simple circuit design, and a high productivity
JP2939865B2 (ja) 1995-07-03 1999-08-25 カシオ計算機株式会社 薄膜半導体装置およびそれを用いた表示装置
JP3092506B2 (ja) 1995-03-27 2000-09-25 カシオ計算機株式会社 半導体装置およびこれを用いた表示駆動装置
JP3734664B2 (ja) * 2000-02-24 2006-01-11 株式会社日立製作所 表示デバイス
JP4785271B2 (ja) 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
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Also Published As

Publication number Publication date
WO2020201860A1 (ja) 2020-10-08
JP7767543B2 (ja) 2025-11-11
JP2025000776A (ja) 2025-01-07
US11777502B2 (en) 2023-10-03
US20220173737A1 (en) 2022-06-02
JPWO2020201860A1 (https=) 2020-10-08
JP2026003064A (ja) 2026-01-08

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