JP7512953B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7512953B2
JP7512953B2 JP2021088985A JP2021088985A JP7512953B2 JP 7512953 B2 JP7512953 B2 JP 7512953B2 JP 2021088985 A JP2021088985 A JP 2021088985A JP 2021088985 A JP2021088985 A JP 2021088985A JP 7512953 B2 JP7512953 B2 JP 7512953B2
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Japan
Prior art keywords
wiring
substrate
semiconductor element
metal body
semiconductor device
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Active
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JP2021088985A
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English (en)
Japanese (ja)
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JP2022181814A5 (enrdf_load_stackoverflow
JP2022181814A (ja
Inventor
悠嗣 小嶌
知巳 奥村
善次 坂本
敬 佐藤
良 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
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Denso Corp
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Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2021088985A priority Critical patent/JP7512953B2/ja
Priority to PCT/JP2022/018365 priority patent/WO2022249805A1/ja
Publication of JP2022181814A publication Critical patent/JP2022181814A/ja
Publication of JP2022181814A5 publication Critical patent/JP2022181814A5/ja
Application granted granted Critical
Publication of JP7512953B2 publication Critical patent/JP7512953B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)
JP2021088985A 2021-05-27 2021-05-27 半導体装置 Active JP7512953B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021088985A JP7512953B2 (ja) 2021-05-27 2021-05-27 半導体装置
PCT/JP2022/018365 WO2022249805A1 (ja) 2021-05-27 2022-04-21 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021088985A JP7512953B2 (ja) 2021-05-27 2021-05-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2022181814A JP2022181814A (ja) 2022-12-08
JP2022181814A5 JP2022181814A5 (enrdf_load_stackoverflow) 2023-03-09
JP7512953B2 true JP7512953B2 (ja) 2024-07-09

Family

ID=84228779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021088985A Active JP7512953B2 (ja) 2021-05-27 2021-05-27 半導体装置

Country Status (2)

Country Link
JP (1) JP7512953B2 (enrdf_load_stackoverflow)
WO (1) WO2022249805A1 (enrdf_load_stackoverflow)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164208A (ja) 2007-12-28 2009-07-23 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2015093295A (ja) 2013-11-11 2015-05-18 新日鐵住金株式会社 金属ナノ粒子を用いた金属接合構造及び金属接合方法並びに金属接合材料
JP2015177182A (ja) 2014-03-18 2015-10-05 三菱電機株式会社 パワーモジュール
WO2017002793A1 (ja) 2015-07-01 2017-01-05 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2017077728A1 (ja) 2015-11-05 2017-05-11 三菱電機株式会社 パワーモジュール及びパワーモジュールの製造方法
JP2018026417A (ja) 2016-08-09 2018-02-15 三菱電機株式会社 電力用半導体装置
JP2019212759A (ja) 2018-06-05 2019-12-12 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
JP2020191367A (ja) 2019-05-21 2020-11-26 株式会社デンソー 半導体装置
WO2020255773A1 (ja) 2019-06-20 2020-12-24 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2021097113A (ja) 2019-12-16 2021-06-24 株式会社デンソー 半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164208A (ja) 2007-12-28 2009-07-23 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2015093295A (ja) 2013-11-11 2015-05-18 新日鐵住金株式会社 金属ナノ粒子を用いた金属接合構造及び金属接合方法並びに金属接合材料
JP2015177182A (ja) 2014-03-18 2015-10-05 三菱電機株式会社 パワーモジュール
WO2017002793A1 (ja) 2015-07-01 2017-01-05 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2017077728A1 (ja) 2015-11-05 2017-05-11 三菱電機株式会社 パワーモジュール及びパワーモジュールの製造方法
JP2018026417A (ja) 2016-08-09 2018-02-15 三菱電機株式会社 電力用半導体装置
JP2019212759A (ja) 2018-06-05 2019-12-12 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
JP2020191367A (ja) 2019-05-21 2020-11-26 株式会社デンソー 半導体装置
WO2020255773A1 (ja) 2019-06-20 2020-12-24 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2021097113A (ja) 2019-12-16 2021-06-24 株式会社デンソー 半導体装置

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JP2022181814A (ja) 2022-12-08
WO2022249805A1 (ja) 2022-12-01

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