JP7477433B2 - 研磨方法 - Google Patents

研磨方法 Download PDF

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Publication number
JP7477433B2
JP7477433B2 JP2020194067A JP2020194067A JP7477433B2 JP 7477433 B2 JP7477433 B2 JP 7477433B2 JP 2020194067 A JP2020194067 A JP 2020194067A JP 2020194067 A JP2020194067 A JP 2020194067A JP 7477433 B2 JP7477433 B2 JP 7477433B2
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Prior art keywords
polishing
workpiece
polished
layer
peak
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JP2020194067A
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Japanese (ja)
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JP2022082902A (ja
JP2022082902A5 (enrdf_load_stackoverflow
Inventor
夕貴 渡邉
陽一 塩川
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Ebara Corp
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Ebara Corp
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Priority to JP2020194067A priority Critical patent/JP7477433B2/ja
Priority to US17/524,144 priority patent/US20220176513A1/en
Priority to KR1020210158307A priority patent/KR20220071915A/ko
Priority to CN202111375685.4A priority patent/CN114536210A/zh
Priority to TW110143131A priority patent/TW202235213A/zh
Publication of JP2022082902A publication Critical patent/JP2022082902A/ja
Publication of JP2022082902A5 publication Critical patent/JP2022082902A5/ja
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  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2020194067A 2020-11-24 2020-11-24 研磨方法 Active JP7477433B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020194067A JP7477433B2 (ja) 2020-11-24 2020-11-24 研磨方法
US17/524,144 US20220176513A1 (en) 2020-11-24 2021-11-11 Polishing method, polishing monitoring method and polishing monitoring apparatus for workpiece
KR1020210158307A KR20220071915A (ko) 2020-11-24 2021-11-17 연마 방법, 워크피스의 연마 감시 방법 및 연마 감시 장치
CN202111375685.4A CN114536210A (zh) 2020-11-24 2021-11-19 研磨方法、工件的研磨监视方法及研磨监视装置
TW110143131A TW202235213A (zh) 2020-11-24 2021-11-19 研磨方法、工件之研磨監視方法及研磨監視裝置

Applications Claiming Priority (1)

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JP2020194067A JP7477433B2 (ja) 2020-11-24 2020-11-24 研磨方法

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JP2022082902A JP2022082902A (ja) 2022-06-03
JP2022082902A5 JP2022082902A5 (enrdf_load_stackoverflow) 2023-03-14
JP7477433B2 true JP7477433B2 (ja) 2024-05-01

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310512A (ja) 1999-04-28 2000-11-07 Hitachi Ltd 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置
JP2009283578A (ja) 2008-05-20 2009-12-03 Tokyo Seimitsu Co Ltd ウェーハの研磨状態モニタ方法並びに研磨状態モニタ装置
JP2010114327A (ja) 2008-11-07 2010-05-20 Tokyo Seimitsu Co Ltd 研磨終了時点の検出方法及び検出装置
US20130280827A1 (en) 2012-04-23 2013-10-24 Dominic J. Benvegnu Method of controlling polishing using in-situ optical monitoring and fourier transform
JP2016105486A (ja) 2010-05-05 2016-06-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 終点検出のためのスペクトル特徴部の動的または適応的な追跡
JP2019021748A (ja) 2017-07-14 2019-02-07 株式会社荏原製作所 膜厚測定装置、研磨装置、および研磨方法
CN110940279A (zh) 2018-09-21 2020-03-31 株式会社迪思科 厚度测量装置和具有厚度测量装置的磨削装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252113A (ja) * 1993-02-26 1994-09-09 Matsushita Electric Ind Co Ltd 半導体基板の平坦化方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310512A (ja) 1999-04-28 2000-11-07 Hitachi Ltd 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置
JP2009283578A (ja) 2008-05-20 2009-12-03 Tokyo Seimitsu Co Ltd ウェーハの研磨状態モニタ方法並びに研磨状態モニタ装置
JP2010114327A (ja) 2008-11-07 2010-05-20 Tokyo Seimitsu Co Ltd 研磨終了時点の検出方法及び検出装置
JP2016105486A (ja) 2010-05-05 2016-06-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 終点検出のためのスペクトル特徴部の動的または適応的な追跡
US20130280827A1 (en) 2012-04-23 2013-10-24 Dominic J. Benvegnu Method of controlling polishing using in-situ optical monitoring and fourier transform
JP2019021748A (ja) 2017-07-14 2019-02-07 株式会社荏原製作所 膜厚測定装置、研磨装置、および研磨方法
CN110940279A (zh) 2018-09-21 2020-03-31 株式会社迪思科 厚度测量装置和具有厚度测量装置的磨削装置

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