JP7474964B2 - Inspection method for device manufacturing equipment and device manufacturing equipment - Google Patents

Description

This disclosure relates to an inspection method for a device manufacturing apparatus and a device manufacturing apparatus.

Ultrasonic bonding, which is a type of solid-state bonding, and thermocompression bonding are known methods for mounting a chip to a substrate via bumps. A bump is a protruding connection electrode formed on the wiring lead on the substrate or on the chip. For example, when mounting a chip to a substrate by ultrasonic bonding, ultrasonic vibrations are applied to the bump placed on one electrode of the chip and substrate while it is pressed against the other electrode of the chip and substrate.

This promotes plastic deformation of the bump and the electrode, bringing the newly formed surfaces of the bump and the electrode into intimate contact with each other, and diffusing the metal atoms of the bump and the electrode. As a result, the bump and the electrode are bonded.

Some flip chip bonders used in ultrasonic bonding and thermocompression bonding have a function for monitoring the mounting load and ultrasonic power during the process. However, this function only monitors the mounting load and ultrasonic power values applied to the entire chip, making it difficult for flip chip bonders to measure the force, i.e., the distortion, acting on the bond between the bump and the electrode on the chip or substrate.

The conventional technology disclosed in Patent Document 1 places a strain gauge directly under the electrode on which the bump is formed, and measures the change in resistance value of the strain gauge during the mounting process, thereby making it possible to measure the strain occurring at the junction between the electrode and the bump. The strain gauge is formed in a straight line by arranging multiple conductors at an equal pitch on a single resistive element. One strain gauge is buried directly under the electrode.

Patent No. 3599003

However, in this type of conventional technology, one linearly shaped strain gauge is embedded directly beneath the electrode, so even if the pressure of the bump against the electrode is constant, if the position of the bump on the electrode changes, the amount of strain measured by the strain gauge will vary. For example, when calculating the amount of misalignment (positional misalignment) of the chip mounted on the substrate based on the measurement value of the strain gauge, the calculation accuracy of the amount of misalignment will decrease if there is variation in the amount of strain. The amount of misalignment affects the assembly accuracy of devices, and therefore greatly influences the quality of MEMS (Micro Electro Mechanical Systems) and optical devices. As such, conventional technology has room for improvement in calculating the amount of misalignment.

Non-limiting examples of the present disclosure contribute to providing an inspection method for a device manufacturing apparatus and a device manufacturing apparatus that can accurately calculate the amount of misalignment of the mounting position of a chip on a substrate.

An inspection method for a device manufacturing apparatus according to an embodiment of the present disclosure is an inspection method for a device manufacturing apparatus that manufactures a device including a chip that is ultrasonically bonded via bumps and a substrate facing the chip, and includes the steps of: measuring the resistance change of each of the multiple sensors when the bumps provided on the chip are mounted on a substrate on which multiple sensors are embedded, arranged radially from the center of the electrode, directly below the electrode against which the bumps are pressed; estimating an overlapping area between the sensor and the surface of the bump pressed against the electrode based on the resistance change; estimating the contour of the pressed surface from the overlapping area; determining the center of the pressed surface from the contour of the pressed surface; and calculating the amount of positional deviation between the center of the pressed surface and the center of the electrode.

A device manufacturing apparatus according to an embodiment of the present disclosure is a device manufacturing apparatus for manufacturing a device including a chip ultrasonically bonded via bumps and a substrate facing the chip, and includes a measurement unit that measures the resistance change of each of the multiple sensors when the bumps provided on the chip are mounted on a substrate on which multiple sensors are embedded directly below the electrode against which the bumps are pressed, the multiple sensors being arranged radially from the center of the electrode, and a processing unit that estimates an overlapping area between the pressing surface of the bump against the electrode and the sensor based on the resistance change, estimates the contour of the pressing surface from the overlapping area, finds the center of the pressing surface from the contour, and calculates the positional deviation between the center of the pressing surface and the center of the electrode.

According to one embodiment of the present disclosure, it is possible to construct an inspection method for a device manufacturing apparatus and a device manufacturing apparatus that can accurately calculate the amount of misalignment of the mounting position of a chip on a substrate.

Further advantages and benefits of an embodiment of the present disclosure will become apparent from the specification and drawings. Such advantages and/or benefits may be provided by some of the embodiments and features described in the specification and drawings, respectively, but not necessarily all of them need be provided to obtain one or more identical features.

FIG. 1 is a configuration diagram of a device manufacturing apparatus 300 according to a first embodiment of the present disclosure. A perspective view of the substrate electrode 105 and the substrate 106 as viewed from the Z-axis direction. A cross-sectional view of the substrate 106 taken along line A-A. FIG. 1 is a configuration diagram of a modified example of the inspection apparatus 101 of the device manufacturing apparatus 300 according to the first embodiment of the present disclosure. A flowchart for explaining an inspection method for the device manufacturing apparatus 300. FIG. 13 shows an example of the configuration of a substrate electrode 205 and a substrate 206 included in a device manufacturing apparatus 300 according to a second embodiment of the present disclosure.

A preferred embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings. Note that in this specification and drawings, components having substantially the same functions are designated by the same reference numerals to avoid redundant description.

(Embodiment 1)
<Configuration of device manufacturing apparatus 300>
An example of the configuration of a device manufacturing apparatus 300 according to the first embodiment of the present disclosure will be described with reference to Fig. 1. Fig. 1 is a configuration diagram of the device manufacturing apparatus 300 according to the first embodiment of the present disclosure.

The device manufacturing apparatus 300 is an apparatus that manufactures the device apparatus 200. The device apparatus 200 may be an apparatus that is composed of electrical components including semiconductors, or an apparatus that is composed of electrical components without semiconductors.

In this embodiment, a manufacturing apparatus for a device composed of electrical components including semiconductors is described as device manufacturing apparatus 300.

In FIG. 1 and subsequent figures, the X-axis direction, the Y-axis direction, and the Z-axis direction respectively represent directions parallel to the X-axis, the Y-axis, and the Z-axis. The X-axis direction and the Y-axis direction are mutually orthogonal. The X-axis direction and the Z-axis direction are mutually orthogonal. The Y-axis direction and the Z-axis direction are mutually orthogonal. The XY plane represents an imaginary plane parallel to the X-axis direction and the Y-axis direction. The XZ plane represents an imaginary plane parallel to the X-axis direction and the Z-axis direction. The YZ plane represents an imaginary plane parallel to the Y-axis direction and the Z-axis direction. In addition, the direction indicated by the arrow in the X-axis direction is the positive X-axis direction, and the opposite direction is the negative X-axis direction. In the Y-axis direction, the direction indicated by the arrow is the positive Y-axis direction, and the opposite direction is the negative Y-axis direction. In the Z-axis direction, the direction indicated by the arrow is the positive Z-axis direction, and the opposite direction is the negative Z-axis direction. The Z-axis direction is, for example, equal to the vertical direction, and the X-axis direction and the Y-axis direction are, for example, equal to the horizontal direction.

The device apparatus 200 is an apparatus in which the chip 102, chip electrodes 103, bumps 104, substrate electrodes 105, and substrate 106 are integrated together using ultrasonic bonding or thermocompression bonding techniques.

A number of chip electrodes 103 are arranged on the chip 102. Bumps 104 made of a conductive material are formed on the surface of the chip electrodes 103.

<Configuration of Inspection Apparatus 101 of Device Manufacturing Apparatus 300>
The inspection apparatus 101 of the device manufacturing apparatus 300 includes a measurement unit 108 and a processing unit 109 .

A number of substrate electrodes 105 are arranged on the substrate 106 at positions facing the bumps 104. The material of the substrate electrodes 105 may be any metal capable of solid-phase bonding with the material of the bumps 104, such as gold or aluminum.

Directly below the substrate electrode 105, multiple piezo-resistive sensors 107 are embedded in the substrate 106. The piezo-resistive sensors 107 have a piezo-resistive effect in which the resistance value changes when mechanical strain is applied. The configuration of the piezo-resistive sensors 107 will be described in detail later.

One end of the internal wiring 110 is connected to the piezo-resistive sensor 107. The other end of the internal wiring 110 is connected to the measurement unit 108. The processing unit 109 is electrically connected to the measurement unit 108 via electrical wiring. The processing unit 109 is an example of a positional deviation calculation unit in this embodiment.

Next, the configuration of the piezo-resistive sensor 107 will be explained with reference to Figures 2 and 3.

<Configuration of piezoresistance sensor 107>
FIG. 2 is a perspective view of the substrate electrode 105 and the substrate 106 as viewed from the Z-axis direction, and FIG. 3 is a cross-sectional view of the substrate 106 taken along line AA.

Directly below the substrate electrode 105, a piezo-resistive sensor _107a , a piezo-resistive sensor _107b , a piezo-resistive sensor _107c , and a piezo-resistive sensor _107d are arranged.

Hereinafter, when there is no need to distinguish between the piezoresistive sensor 107 _a , the piezoresistive sensor 107 _b , the piezoresistive sensor 107 _c , and the piezoresistive sensor 107 _d , they will be simply referred to as sensors 107 .

The sensor 107 is embedded in an insulating layer 111 constituting the substrate 106 (see FIG. 3). The shape of the sensor 107 is rectangular (see FIG. 2). The lengths of the short side and the long side of the sensor 107 are represented by W and L _n (n is a natural number equal to or greater than 1), respectively.

The multiple sensors 107 are arranged radially with respect to the center O of the substrate electrode 105.

Specifically, the multiple sensors 107 are arranged to surround the center O of the substrate electrode 105. The short sides of the multiple sensors 107 face each other. The long sides of the multiple sensors 107 are arranged along imaginary lines extending radially from the center O of the substrate electrode 105.

It is preferable that the multiple sensors 107 are arranged at equal intervals on a virtual circle whose center point is the center O of the substrate electrode 105.

In this embodiment, four sensors 107 are used, but the number of sensors 107 is not limited to four and may be two or more.

The material of the sensor 107 is, for example, n-type Si having a piezoresistance effect. Note that the material of the sensor 107 is not limited to n-type Si. The sensor 107 may be made of, for example, a metal such as CuNi, NiCr, or Ti, or may be made of a semiconductor such as Ge or GaAs that utilizes the piezoresistance effect.

In this embodiment, a piezo-resistive sensor 107 is used, but any sensor whose physical properties change when pressure is applied may be used in addition to the piezo-resistive sensor 107.

An internal wiring 110 is connected to each of the two short sides of the sensor 107. The internal wiring 110 is a wiring for measuring the resistance value _Rn of the sensor 107 from one short side of the sensor 107 to the other short side of the sensor 107.

Of the multiple sensors 107, at least one sensor 107 is connected to the inside of an internal wiring 112. "r" in FIG. 2 indicates the connection position of the internal wiring 112 to the sensor 107.

The internal wiring 112 is electrically connected to the measuring unit 108. The internal wiring 112 is a wiring for measuring the resistance value R _ref of the sensor 107.

The resistance value R _ref is the resistance value of the region from the point where the internal wiring 110 is connected to the sensor 107 to the connection position r, among the resistance values in the long side direction of the sensor 107 .

<Resistance change due to piezoresistance effect>
When the bump 104 is pressed against the board electrode 105, a pressing force of the bump 104 acts on a pressing surface S (bump pressing surface) surrounded by an imaginary circular dashed line. This pressing force induces a distortion e in the sensor module 207 disposed directly below the board electrode 105.

The pressing surface S is the surface of the bump 104 pressed against the substrate electrode 105 at a specific time during the mounting process, as viewed in a plane from the Z-axis direction.

When a strain e is uniformly applied to the sensor 107, the resistance value R _n (n is a natural number equal to or greater than 1) in the long side direction of the sensor 107 changes from R _n0 to R _n0 +ΔR _e .

R _n0 is the resistance value in the long side direction of the sensor 107 before the bump 104 is pressed against the board electrode 105. ΔR _e is the increase in the resistance value of the sensor 107 caused by the distortion e.

The rate of change ΔR _e /R _n0 of the resistance value R _n is expressed by the formula (1).

ΔR _e /R _n0 =K _x e _xx +K _y x e _yy +K _z x e _zz ... (1)

In formula (1), e _xx represents the vertical distortion component of the distortion e in the X-axis direction, _that is, the distortion component that expands the substrate electrode 105 in the X-axis direction.

In formula (1), _Kx represents the gauge factor of _exx (piezoresistive coefficient for strain). The value of K varies depending on the type of material that constitutes the sensor 107 and also on the crystal orientation of the material that constitutes the sensor 107.

In formula (1), e _yy is a vertical strain component of the strain e in the Y-axis direction. e _yy is a strain component that expands the substrate electrode 105 in the Y-axis direction. K _y in formula (1) represents the gauge factor of e _yy .

In formula (1), e _zz is the vertical strain component in the Z-axis direction of the strain e. e _zz is the strain component that compresses the substrate electrode 105. _Kz in formula (1) represents the gauge factor of e _zz .

<Role of the piezo-resistance sensor 107>
During the mounting process, the pressure surface S increases with the deformation of the bump 104. L' _n (n is a natural number of 1 or more) shown in Fig. 2 represents the length of the area where the sensor 107 and the pressure surface S overlap in the long side direction of the sensor 107.

The area of the region where the sensor 107 and the pressing surface S overlap can be expressed as Area ≈ W × L' _n , where W is the length of the sensor 107 in the short side direction.

When the pressing force of the bump 104 acts on the pressing surface S, a distortion _eS is induced in the area where the sensor 107 and the pressing surface S overlap.

At this time, each of the sensors 107 has an area where the resistance value changes due to the strain _eS (≈W×L′ _n ) and an area where the resistance value does not change (≈W×(L−L′ _n ).

In the case of the thermocompression bonding method, compressive strain (vertical strain e _zz ) is generated uniformly within the pressing surface S by applying a mounting load.

At this time, the vertical strain e _xx has a very small value relative to the vertical strain e _zz . This is because the Poisson's ratio vx of the material of the sensor 107 is vx<<1. Similarly, the vertical strain e _yy has a very small value relative to the vertical strain e _zz because the Poisson's ratio vy of the material of the sensor 107 is vy<<1.

As a result, the value of the strain _eS in the area where the sensor 107 and the pressing surface S overlap is uniform (even) at any position (area) on the pressing surface S.

In the case of ultrasonic bonding, the distortion _eS in the area where the sensor 107 and the pressing surface S overlap generates vertical distortion _exx , vertical distortion _eyy , and vertical distortion _ezz , and is superimposed with distortion in the planar direction (direction parallel to the XY plane) due to ultrasonic vibration.

The amount of distortion in the planar direction increases as you move from the area near the center of the pressing surface S to the area closer to the periphery.

However, since the distortion in the planar direction is a repeated stress of ultrasonic vibration, if the distortion in the planar direction is treated as a value averaged over a very short period of time, the value of the distortion _eS in the area where the sensor 107 and the pressing surface S overlap will be uniform (even) at any position (area) on the pressing surface S.

When a strain _eS is uniformly applied to the sensor 107, the rate of change in resistance is ΔR _S /R _n0 . The resistance value R _n of the sensor 107 in the long side direction is expressed by the following equation (2).

_Rn = _ΔRs / _Rn0 × (L' _n / _Ln ) × _Rn0 + ( _Ln - _L'n ) / _Ln × _{Rn0 ...} (2)

In equation (2), ΔR _S is the increase in resistance of the sensor 107 caused by the strain e _S.

On the other hand, the area of the resistance value in the long side direction of the sensor 107 from the point where the internal wiring 110 is connected to the sensor 107 to the connection position r is contained within the pressing surface S.

Therefore, a uniform strain _eS is induced in that region of the sensor 107, and the rate of change in resistance ΔR _ref /R _ref0 is expressed by equation (3).

ΔR _ref /R _ref0 =ΔR _S /R _n0 (3)

In formula (3), R _ref0 is the resistance value of the region from the point where internal wiring 110 is connected to sensor 107 to connection position r before bump 104 is pressed against board electrode 105.

By measuring the change in the resistance value _Rn of each sensor 107 and the change in at least one of the resistance values _Rref , it is possible to estimate the length L' _n of the sensor 107 in the long side direction based on equations (2) and (3).

It is preferable that the sensor 107 is configured so that the aspect ratio of the short side to the long side of the sensor 107 is L>>W. If the contour of the pressing surface S has curvature, the area where the sensor 107 and the pressing surface S overlap will not be strictly rectangular, and L' _n estimated based on equations (2) and (3) will contain an error. However, if L>>W, the error can be reduced and the accuracy of L' _n will be improved.

It is preferable that the sensors 107 are arranged radially from the center O of the board electrode 105 and extend to the outside of the maximum pressing surface S that can be obtained during the mounting process. This makes it possible to expand the detection range of L' _n .

When a cylindrical bump 104 is used, it is preferable that the length from the connection position r to the center O of the board electrode 105 be shorter than the value obtained by subtracting the maximum mounting variation from the top radius of the bump 104.

In addition, when the bump 104 is a stud bump, it is preferable that the length from the connection position r to the center O of the substrate electrode 105 be shorter than the value obtained by subtracting the maximum mounting variation from the base radius of the bump 104.

In this way, by shortening the length from the connection position r to the center O of the board electrode 105, the measurement range of the resistance value _Rref falls within the pressing surface S at the moment when the mounting load is applied and the bump starts to crush after the start of the mounting process. Therefore, it becomes possible to measure the change in L' _n from the early stage of the mounting process.

The number of measurements of the resistance value R _ref is determined by the material and arrangement direction of the sensor 107 .

For example, assume that the material of the sensor 107 is a cubic crystal such as Si or Ge, and that multiple sensors 107 are formed by etching from a single crystal layer of such a cubic crystal with a (100) plane orientation, such that the angle between the long sides of adjacent sensors 107 is 90°. In this case, due to the symmetry of the crystal structure, the sensitivity of the piezoresistance effect and the mechanical properties of each sensor 107 are the same.

In other words, between the sensors 107, the gauge factor _KL in the long side direction in the XY plane, the gauge factor _KW in the direction perpendicular to the long side direction in the XY plane (short side direction), and the gauge factor _Kz in the Z-axis direction are all equal.

In addition, the Poisson's ratio vL in the long side direction and the Poisson's ratio vW in the short side direction of each sensor 107 are all the same value. In addition, the vertical strain _eLL induced in the long side direction by compression in the Z-axis direction and the vertical strain _eWW induced in the short side direction are the same value.

Therefore, the rate of change in resistance ΔR _S /R _n0 when strain e _S is uniformly applied to the sensors 107 can be expressed by equation (4), and the rate of change in resistance ΔR _S /R _n0 of all the sensors 107 will be the same value.

ΔR _S /R _n0 =K _L ×e _LL +K _W ×e _WW +K _z ×e _{zz ...} (4)

Thus, by measuring R _ref of any one of the multiple sensors 107 , the overlapping lengths L′ _n of all the sensors 107 can be estimated.

When the sensitivity of the piezoresistance effect and the mechanical properties in each direction of the sensors 107 differ among the multiple sensors 107, R _ref of each sensor 107 may be measured.

Next, a modified example of the inspection apparatus 101 of the device manufacturing apparatus 300 according to the first embodiment of the present disclosure will be described with reference to FIG.

Figure 4 is a configuration diagram of a modified example of the inspection apparatus 101 of the device manufacturing apparatus 300 in embodiment 1 of the present disclosure.

The inspection apparatus 101 of the device manufacturing apparatus 300 according to the modified example includes a plurality of sensors 107, and further includes a piezoresistive sensor 113 dedicated to measuring R _ref .

The piezoresistance sensor 113 has a rectangular shape, and is embedded, for example, directly below the center O of the substrate electrode 105.

Two internal wirings 112 are connected to the piezo-resistive sensor 113. For example, one internal wiring 112 is connected to the center of the piezo-resistive sensor 113. The other internal wiring 112 is connected to one of the four sides of the piezo-resistive sensor 113.

The measuring unit 108 measures the resistance value R _ref of the region from the point where one internal wire 112 is connected to the piezo-resistance sensor 113 to the point where the other internal wire 112 is connected to the piezo-resistance sensor 113 .

According to the modified example, by providing the piezoresistive sensor 113, L' _n can be estimated based on the measured _Rref and _Rn even if the length of the long side direction of each sensor 107 is short. In addition, since the length of the long side direction of each sensor 107 can be shortened, the degree of freedom in designing the substrate 106 is improved.

<Inspection method for device manufacturing apparatus 300>
Next, a method of inspecting the device manufacturing apparatus 300 will be described with reference to Fig. 5. Fig. 5 is a flow chart for explaining the method of inspecting the device manufacturing apparatus 300.

The inspection apparatus 101 of the device manufacturing apparatus 300 is installed and used in, for example, the bonding apparatus 114 shown in FIG. 1.

The bonding device 114 includes a stage 115 on which the substrate 106 is placed, and a head 116 that holds and presses the chip 102.

The bonding device 114 transports the chip 102 toward the substrate 106 with the chip 102 fixed to the tip of the head 116, and operates so that the chip 102 comes into contact with the substrate 106 via the bumps 104 (step S1).

Then, when the chip 102 contacts the substrate 106 via the bumps 104, the bonding device 114 applies load, ultrasonic power, heat, etc., thereby mounting the chip 102 to the substrate 106 (step S2).

At this time, elastic and plastic deformations are induced in the bump 104 and the substrate electrode 105, and mechanical strain is induced in the sensor 107 via the insulating layer 111.

The resistance value of the sensor 107 changes according to the amount of mechanical strain due to the piezoresistance effect. The measurement unit 108 measures the resistance values of the multiple sensors 107 that change during the mounting process in real time and transmits the measured data to the processing unit 109 (step S3).

In addition, in ultrasonic bonding, the resistance value of the sensor 107 fluctuates in accordance with the ultrasonic vibration, so the measurement unit 108 transmits the average resistance value over a short period of time to the processing unit 109 as measurement data.

The processing unit 109, which has acquired the measurement data, calculates the overlapping length L' _n between each sensor 107 and the pressing surface S based on the measurement data (step S4).

Next, the processing unit 109 converts the calculated L' _n from the positional information regarding the position of each sensor 107 and the dimensional information regarding the dimensions of each sensor 107 into coordinates _Pn (n is a natural number greater than or equal to 1), which is a point on the contour of the pressing surface S when the center substrate O of the substrate electrode 105 is set as the origin (step S5).

This makes it clear the multiple points where the contour of the pressed surface S overlaps with the sensor 107, so the processing unit 109 estimates the contour of the pressed surface S from a polygon connecting adjacent coordinates _Pn (step S6).

The position information and dimensional information of each sensor 107 may be preset in the storage means of the processing unit 109, or may be transmitted from a device external to the processing unit 109.

The contour of the pressing surface S represents the lines that form the perimeter of the pressing surface S with the center O' as the origin.

Next, the processing unit 109 calculates the coordinates of the center O' of the pressing surface S from the estimated contour of the pressing surface S when the center substrate O of the board electrode 105 is set as the origin (step S7), and calculates the amount of deviation (mounting position deviation) between the center O' of the pressing surface S and the center O of the board electrode 105 (step S8). The mounting position deviation represents the amount of deviation of the mounting position of the bump on the board electrode 105.

When the bump shape is circular, the pressing surface S will also be circular in the thermocompression bonding method. In that case, if there are at least three coordinate points P, it is possible to immediately estimate the radius and center position of the pressing surface S, so three sensors 107 should be placed directly under the board electrode 105.

In addition, when the bump shape is elliptical and the thermocompression bonding method is used, or when the bump shape is circular and ultrasonic bonding is used, the pressed surface S is elliptical. When the contour of the pressed surface S is elliptical, two sensors 107 are arranged so that the long sides are aligned along the long axis direction of the ellipse and the short sides face each other. Furthermore, two sensors 107 other than these sensors 107 are arranged so that the long sides are aligned along the short axis direction of the ellipse and the short sides face each other. This makes it possible to obtain four coordinates _Pn on the contour of the pressed surface S, and to estimate the contour of the pressed surface S based on these coordinates _Pn . Note that in ultrasonic bonding, the ultrasonic vibration direction is the long axis direction.

If the pressure surface S changes very little during the mounting process, two sensors 107 can be embedded directly below the board electrode 105.

According to this embodiment, by arranging multiple sensors 107 radially, the shape of the pressing surface S on the board electrode 105 and the amount of misalignment of the mounting position can be estimated non-destructively based on the resistance values of the multiple sensors 107 that change during the mounting process.

Therefore, it is possible to prevent products that may be determined to be defective due to the shape of the pressing surface S or the amount of misalignment of the mounting position from being released onto the market, without relying on statistical guarantees from increasing the number of destructive tests.

In addition, according to this embodiment, the change in the shape of the pressing surface S during the mounting process and the amount of mounting position misalignment can be monitored in real time, making it easy to detect the timing at which a mounting position misalignment occurs and derive mounting conditions that result in the desired bump pressing surface shape. This is expected to significantly shorten the time required for defect analysis and development.

(Embodiment 2)
Fig. 6 is a diagram showing a configuration example of substrate electrode 205 and substrate 206 provided in device manufacturing apparatus 300 according to the second embodiment of the present disclosure. Fig. 6 shows a perspective view of substrate electrode 205 and substrate 206 as viewed from the Z-axis direction. In Fig. 6, the same components as those shown in Fig. 2 are designated by the same reference numerals, and description thereof will be omitted.

The device manufacturing apparatus 300 of the second embodiment has a substrate electrode 205 instead of the electrode 105 of the first embodiment.

Moreover, the device manufacturing apparatus 300 of the second embodiment includes a piezoresistive sensor 208 _a , a piezoresistive sensor 208 b , a piezoresistive sensor 208 _c , and a piezoresistive sensor 208 _d instead of the multiple piezoresistive sensors ₁₀₇ of the first embodiment.

Hereinafter, when there is no need to distinguish between the piezoresistive sensor 208 _a , the piezoresistive sensor 208 _b , the piezoresistive sensor 208 _c , and the piezoresistive sensor 208 _d , they will be simply referred to as sensors 208 .

The multiple sensors 208 are arranged radially with respect to the center O of the substrate electrode 205, similar to the multiple sensors 107 in the first embodiment. The sensor 208 includes multiple sensor modules 207.

The material of the sensor module 207 is, for example, n-type Si having a piezoresistance effect. The multiple sensor modules 207 are arranged linearly and spaced apart from each other, and are embedded in the substrate 106 shown in FIG. 3.

The sensor module 207 is rectangular in shape. Two internal wirings 210 are connected to the sensor module 207.

For example, one of the internal wirings 210 is connected to the first side of the four sides that form the sensor module 207.

The other internal wiring 210 is connected to the second side of the four sides that form the sensor module 207, which is opposite the first side of the sensor module 207.

Internal wiring 210 is connected to the same position of each sensor module 207 that constitutes one sensor 208. The internal wiring 210 is connected to the measurement unit 108 shown in FIG. 1.

In this embodiment, four sensors 208 are used, but the number of sensors 208 is not limited to four and may be two or more.

<Role of the piezo-resistance sensor 208>
C _n (n is a natural number equal to or greater than 1) shown in FIG. 6 represents a sensor module 207 present within the pressing surface S of the bump 104 among the multiple sensor modules 207 that constitute the sensor 208 .

D _n (n is a natural number equal to or greater than 1) shown in FIG. 6 represents a sensor module 207 that exists outside the pressing surface S of the bump 104 among the multiple sensor modules 207 that constitute the sensor 208 .

When the pressing force of the bump 104 acts on the pressing surface S, a strain e _S is induced in the sensor module 207 present within the pressing surface S of the bump 104 .

At this time, for each sensor 208, there are sensor modules 207 within a range of C _n and sensor modules 207 within a range of D _n .

The sensor module 207 within the range of C _n is one or more sensor modules whose resistance value changes with strain e _S.

The sensor module 207 within the range D _n is one or more sensor modules whose resistance value does not change due to the strain e _S.

If the rate of resistance change when strain _eS is uniformly applied to the sensor module 207 is ΔR _S /R _n0 , then of the multiple sensor modules 207 in the range C _n , the rate of resistance change of those that entirely overlap the pressing surface S will be ΔR _S /R _n0 . Also, of the multiple sensor modules 207 in the range C _n , the rate of resistance change of those that partially overlap the pressing surface S will be a value in the range from 0 to ΔR _S /R _n0 .

On the other hand, of the multiple sensor modules 207 that make up one sensor 208, the one closest to the center O of the board electrode 205 overlaps entirely within the pressing surface S at the earliest time during the mounting process.

The processing unit 109 therefore compares the resistance change rate of the sensor module 207 that is closest to the center O of the substrate electrode 205 among the multiple sensor modules 207 that make up one sensor 208 with the resistance change rate of the other sensor modules 207. This allows the processing unit 109 to determine which sensor module 207 overlaps with the pressing surface S.

Here, positional information regarding the position of each sensor 208 and dimensional information regarding the dimensions of each sensor 208 are known.

Therefore, the processing unit 109 calculates the distance PC _n (n is a natural number equal to or greater than 1) based on the position information and dimensional information of each sensor 208, and information about the sensor module 207 overlapping with the pressing surface S.

Distance _PCn is the distance from center O of board electrode 205 to sensor module 207 located on the outermost side of board electrode 205 where the rate of resistance change is ΔR _S /R _n0 or a value in the range from 0 to ΔR _S /R _n0 .

According to the second embodiment, by arranging the sensor 208 having a plurality of sensor modules 207 radially, it is possible to calculate the distance from the center O of the board electrode 205 to the sensor module 207 whose resistance change rate has changed. This makes it possible to non-destructively estimate the shape of the pressing surface S on the board electrode 205 and the amount of misalignment of the mounting position.

In addition, in the second embodiment, the size and spacing of the sensor modules 207 that make up the sensor 208 can be freely designed, making it easy to add functions other than inspection of the shape of the pressing surface S and the amount of misalignment of the mounting position to the same board electrode 205.

The device manufacturing equipment inspection method and device manufacturing equipment of the present invention make it possible to visualize the behavior of the bump pressing portion during the mounting process in device manufacturing equipment and device manufacturing processes that use solid-state bonding to assemble devices, making it possible to improve the efficiency of the work of setting manufacturing conditions and the quality of the products produced.

REFERENCE SIGNS LIST 101 Inspection apparatus 102 Chip 103 Chip electrode 104 Bump 105 Substrate electrode 106 Substrate 107 Piezoresistive sensor 108 Measurement section 109 Processing section 110 Internal wiring 111 Insulating layer 112 Internal wiring 113 Piezoresistive sensor 114 Bonding apparatus 115 Stage 116 Head 200 Device apparatus 205 Substrate electrode 206 Substrate 207 Sensor module 208 Piezoresistive sensor 210 Internal wiring 300 Device manufacturing apparatus

Claims (6)

1. A method for inspecting a device manufacturing apparatus that manufactures a device including a chip that is ultrasonically bonded via bumps and a substrate facing the chip, comprising:
a step of measuring a change in resistance value of each of the plurality of sensors when the bumps provided on the chip are mounted on a substrate in which a plurality of sensors are embedded radially from the center of an electrode directly under the electrode against which the bumps are pressed;
estimating an overlapping area between the sensor and a pressing surface of the bump against the electrode based on the change in resistance value;
estimating a contour of the pressing surface from the overlapping region;
determining a center of the pressing surface from the contour of the pressing surface;
calculating a positional deviation between a center of the pressing surface and a center of an electrode;
A method for inspecting a device manufacturing apparatus comprising: The method for inspecting a device manufacturing apparatus according to claim 1, wherein the sensor is a rectangular piezo-resistive sensor. The method for inspecting a device manufacturing apparatus according to claim 1, wherein the sensor includes a plurality of piezo-resistive sensors arranged linearly and spaced apart from one another. A device manufacturing apparatus for manufacturing a device including a chip that is ultrasonically bonded via bumps and a substrate facing the chip, comprising:
a measurement unit that measures a change in resistance value of each of the plurality of sensors when the bumps provided on the chip are mounted on a substrate on which a plurality of sensors are embedded, the sensors being arranged radially from the center of the electrode, directly under the electrode against which the bumps are pressed;
a processing unit that estimates an overlapping area between the sensor and a surface of the bump pressed against the electrode based on the change in resistance value, estimates a contour of the pressing surface from the overlapping area, determines a center of the pressing surface from the contour, and calculates a positional deviation between the center of the pressing surface and a center of the electrode;
A device manufacturing apparatus comprising: The device manufacturing apparatus according to claim 4, wherein the sensor is a rectangular piezo-resistive sensor. The device manufacturing apparatus according to claim 4 , wherein the sensor includes a plurality of piezoresistive sensors arranged linearly and spaced apart from each other.

Images