JP7469578B2 - 適応型電圧クランプ及び関連方法 - Google Patents

適応型電圧クランプ及び関連方法 Download PDF

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JP7469578B2
JP7469578B2 JP2020538581A JP2020538581A JP7469578B2 JP 7469578 B2 JP7469578 B2 JP 7469578B2 JP 2020538581 A JP2020538581 A JP 2020538581A JP 2020538581 A JP2020538581 A JP 2020538581A JP 7469578 B2 JP7469578 B2 JP 7469578B2
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transistor
voltage
clamp
gate
control signal
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Japanese (ja)
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JPWO2019140109A5 (https=
JP2021510486A (ja
JP2021510486A5 (https=
Inventor
ジュン キム エウン
アラス スアルプ
ラフマン アビドゥール
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06766—Input circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Control Of Electrical Variables (AREA)
JP2020538581A 2018-01-10 2019-01-10 適応型電圧クランプ及び関連方法 Active JP7469578B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862615696P 2018-01-10 2018-01-10
US62/615,696 2018-01-10
US16/001,551 2018-06-06
US16/001,551 US11184000B2 (en) 2018-01-10 2018-06-06 Adaptive voltage clamps and related methods
PCT/US2019/013080 WO2019140109A1 (en) 2018-01-10 2019-01-10 Adaptive voltage clamps and related methods

Publications (4)

Publication Number Publication Date
JP2021510486A JP2021510486A (ja) 2021-04-22
JPWO2019140109A5 JPWO2019140109A5 (https=) 2022-02-14
JP2021510486A5 JP2021510486A5 (https=) 2022-02-14
JP7469578B2 true JP7469578B2 (ja) 2024-04-17

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Family Applications (1)

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JP2020538581A Active JP7469578B2 (ja) 2018-01-10 2019-01-10 適応型電圧クランプ及び関連方法

Country Status (5)

Country Link
US (1) US11184000B2 (https=)
EP (1) EP3738208A4 (https=)
JP (1) JP7469578B2 (https=)
CN (1) CN111742490B (https=)
WO (1) WO2019140109A1 (https=)

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US11289903B2 (en) * 2018-10-04 2022-03-29 Texas Instruments Incorporated Suppressing overvoltage transients in a serial interface
CN114578887B (zh) * 2020-12-02 2024-05-10 圣邦微电子（北京）股份有限公司 自适应电源电压钳位电路
CN112667061B (zh) * 2020-12-10 2023-01-10 浪潮电子信息产业股份有限公司 一种应用于服务器的电流控制电路以及一种服务器
DE102021134079A1 (de) * 2021-12-21 2023-06-22 Cariad Se Steuereinrichtung zum Steuern wenigstens eines elektrisch steuerbaren Steuerelements, Steuerschaltung hiermit, Fahrzeugsteuerung, Kraftfahrzeug sowie Verfahren zum Herstellen einer Steuerschaltung
JP2023167152A (ja) * 2022-05-11 2023-11-24 ローム株式会社 スイッチ回路、スイッチドキャパシタコンバータ、及び車両
TWI890246B (zh) * 2022-12-28 2025-07-11 美商高效電源轉換公司 用於電力裝置之閘極過電壓保護之積體電路
CN115932528B (zh) * 2022-12-29 2026-04-03 苏州元脑智能科技有限公司 一种mosfet soa曲线自动化测试系统及方法

Citations (5)

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US20020079944A1 (en) 2000-12-09 2002-06-27 Rainald Sander Circuit configuration with a controllable current limiting circuit for driving a load
JP2005506707A (ja) 2001-10-09 2005-03-03 ローベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング 殊に点火に使用するための半導体回路装置およびその使用法
DE102005057765A1 (de) 2005-12-02 2007-06-06 Infineon Technologies Austria Ag Schaltungsanordnung mit einem Leistungstransistor und einer Überspannungsschutzschaltung
JP2010537273A (ja) 2007-08-13 2010-12-02 ザ パワーワイズ グループ，インコーポレイテッド Ｉｇｂｔ／ｆｅｔに基づくエネルギー節約装置、システム及び方法
JP2014138303A (ja) 2013-01-17 2014-07-28 Denso Corp 誘導性負荷駆動装置

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US5530612A (en) * 1994-03-28 1996-06-25 Intel Corporation Electrostatic discharge protection circuits using biased and terminated PNP transistor chains
US5617283A (en) * 1994-07-01 1997-04-01 Digital Equipment Corporation Self-referencing modulation circuit for CMOS integrated circuit electrostatic discharge protection clamps
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US6169439B1 (en) * 1997-01-02 2001-01-02 Texas Instruments Incorporated Current limited power MOSFET device with improved safe operating area
US6630844B1 (en) * 2000-08-22 2003-10-07 Altera Corporation Supply voltage detection circuit
TWI243505B (en) 2004-08-20 2005-11-11 Nan Ya Printed Circuit Board C Method of manufacturing a flat panel direct methanol fuel cell
US8143812B2 (en) * 2009-06-25 2012-03-27 Texas Instruments Incorporated Clamp to enable low voltage switching for high voltage terminal applications
RU2455131C1 (ru) 2010-11-13 2012-07-10 Общество С Ограниченной Ответственностью "Есм" Источник питания для электрохимической обработки материалов
WO2014101075A1 (en) * 2012-12-28 2014-07-03 General Electric Company Systems and methods for control of power semiconductor devices
JP5761215B2 (ja) * 2013-01-21 2015-08-12 株式会社デンソー ゲート駆動回路
JP6034719B2 (ja) 2013-02-27 2016-11-30 日立オートモティブシステムズ株式会社 電子制御装置
JP6303410B2 (ja) * 2013-11-07 2018-04-04 富士電機株式会社 電力供給装置
JP6271461B2 (ja) * 2015-03-09 2018-01-31 株式会社東芝 半導体装置
JP6649845B2 (ja) 2016-05-24 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
US10243551B1 (en) * 2017-09-06 2019-03-26 Alpha And Omega Semiconductor (Cayman) Ltd. Over voltage protection for cascode switching power device
EP3595152B1 (en) * 2018-07-12 2023-09-06 Power Integrations, Inc. Protecting semiconductor switches in switched mode power converters
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020079944A1 (en) 2000-12-09 2002-06-27 Rainald Sander Circuit configuration with a controllable current limiting circuit for driving a load
JP2005506707A (ja) 2001-10-09 2005-03-03 ローベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング 殊に点火に使用するための半導体回路装置およびその使用法
DE102005057765A1 (de) 2005-12-02 2007-06-06 Infineon Technologies Austria Ag Schaltungsanordnung mit einem Leistungstransistor und einer Überspannungsschutzschaltung
JP2010537273A (ja) 2007-08-13 2010-12-02 ザ パワーワイズ グループ，インコーポレイテッド Ｉｇｂｔ／ｆｅｔに基づくエネルギー節約装置、システム及び方法
JP2014138303A (ja) 2013-01-17 2014-07-28 Denso Corp 誘導性負荷駆動装置

Also Published As

Publication number Publication date
CN111742490A (zh) 2020-10-02
EP3738208A1 (en) 2020-11-18
CN111742490B (zh) 2024-07-05
WO2019140109A1 (en) 2019-07-18
EP3738208A4 (en) 2021-03-10
US20190214980A1 (en) 2019-07-11
JP2021510486A (ja) 2021-04-22
US11184000B2 (en) 2021-11-23

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