JP7442806B2 - 熱電変換材料、その製造方法およびそれを用いた熱電変換素子 - Google Patents
熱電変換材料、その製造方法およびそれを用いた熱電変換素子 Download PDFInfo
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- JP7442806B2 JP7442806B2 JP2020098363A JP2020098363A JP7442806B2 JP 7442806 B2 JP7442806 B2 JP 7442806B2 JP 2020098363 A JP2020098363 A JP 2020098363A JP 2020098363 A JP2020098363 A JP 2020098363A JP 7442806 B2 JP7442806 B2 JP 7442806B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 166
- 239000000463 material Substances 0.000 title claims description 150
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 claims description 91
- 239000013078 crystal Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 64
- 239000011777 magnesium Substances 0.000 claims description 44
- 239000011159 matrix material Substances 0.000 claims description 39
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 34
- 229910052718 tin Inorganic materials 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 229910052787 antimony Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 229910052749 magnesium Inorganic materials 0.000 claims description 19
- 229910019021 Mg 2 Sn Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229920005570 flexible polymer Polymers 0.000 claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 27
- 238000002050 diffraction method Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 14
- 229910052742 iron Inorganic materials 0.000 description 11
- 229910005382 FeSn Inorganic materials 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 7
- 238000003917 TEM image Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910018565 CuAl Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019043 CoSn Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910001566 austenite Inorganic materials 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
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- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
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- -1 polydimethylsiloxane Polymers 0.000 description 2
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- 238000000851 scanning transmission electron micrograph Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005331 FeSi2 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000555 poly(dimethylsilanediyl) polymer Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2020098363A JP7442806B2 (ja) | 2020-06-05 | 2020-06-05 | 熱電変換材料、その製造方法およびそれを用いた熱電変換素子 |
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| JP2020098363A JP7442806B2 (ja) | 2020-06-05 | 2020-06-05 | 熱電変換材料、その製造方法およびそれを用いた熱電変換素子 |
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| JP2021192402A JP2021192402A (ja) | 2021-12-16 |
| JP2021192402A5 JP2021192402A5 (https=) | 2023-03-29 |
| JP7442806B2 true JP7442806B2 (ja) | 2024-03-05 |
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| JP2020098363A Active JP7442806B2 (ja) | 2020-06-05 | 2020-06-05 | 熱電変換材料、その製造方法およびそれを用いた熱電変換素子 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115386835A (zh) * | 2022-08-11 | 2022-11-25 | 中国科学院电工研究所 | 一种柔性锑化镁薄膜及其制备方法和应用、柔性热电器件 |
| WO2026063287A1 (ja) * | 2024-09-17 | 2026-03-26 | 国立研究開発法人物質・材料研究機構 | 熱電材料、その製造方法、および、熱電発電素子、ならびに、放熱デバイス |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011115297A1 (ja) | 2010-03-17 | 2011-09-22 | 国立大学法人茨城大学 | Ｍｇ2Ｓｉ1-ｘＳｎｘ多結晶体の製造装置および製造方法 |
| JP2012244001A (ja) | 2011-05-20 | 2012-12-10 | Toyota Motor Corp | ナノコンポジット熱電材料およびその製造方法 |
| JP2017098461A (ja) | 2015-11-26 | 2017-06-01 | トヨタ自動車株式会社 | 熱電材料 |
| JP2018142564A (ja) | 2017-02-27 | 2018-09-13 | 株式会社日立製作所 | 熱電変換材料及びその製造方法 |
| US20180346372A1 (en) | 2015-11-30 | 2018-12-06 | The Board Of Regents For Oklahoma State University | Microwave processing of thermoelectric materials and use of glass inclusions for improving the mechanical and thermoelectric properties |
| WO2019039320A1 (ja) | 2017-08-22 | 2019-02-28 | 株式会社白山 | 熱電材料及び熱電モジュール |
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- 2020-06-05 JP JP2020098363A patent/JP7442806B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011115297A1 (ja) | 2010-03-17 | 2011-09-22 | 国立大学法人茨城大学 | Ｍｇ2Ｓｉ1-ｘＳｎｘ多結晶体の製造装置および製造方法 |
| JP2012244001A (ja) | 2011-05-20 | 2012-12-10 | Toyota Motor Corp | ナノコンポジット熱電材料およびその製造方法 |
| JP2017098461A (ja) | 2015-11-26 | 2017-06-01 | トヨタ自動車株式会社 | 熱電材料 |
| US20180346372A1 (en) | 2015-11-30 | 2018-12-06 | The Board Of Regents For Oklahoma State University | Microwave processing of thermoelectric materials and use of glass inclusions for improving the mechanical and thermoelectric properties |
| JP2018142564A (ja) | 2017-02-27 | 2018-09-13 | 株式会社日立製作所 | 熱電変換材料及びその製造方法 |
| WO2019039320A1 (ja) | 2017-08-22 | 2019-02-28 | 株式会社白山 | 熱電材料及び熱電モジュール |
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| JP2021192402A (ja) | 2021-12-16 |
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