JP7432509B2 - 表示装置 - Google Patents
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- JP7432509B2 JP7432509B2 JP2020530746A JP2020530746A JP7432509B2 JP 7432509 B2 JP7432509 B2 JP 7432509B2 JP 2020530746 A JP2020530746 A JP 2020530746A JP 2020530746 A JP2020530746 A JP 2020530746A JP 7432509 B2 JP7432509 B2 JP 7432509B2
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- light emitting
- emitting element
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Images
Classifications
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Description
本実施の形態では、本発明の一態様の表示装置の構成例について説明する。
図1(A)は、本発明の一態様の表示装置10の断面概略図である。表示装置10は、青色の光Bを呈する画素11B、緑色の光Gを呈する画素11G、及び赤色の光Rを呈する画素11Rを有する。
光学機能層13としては、あるしきい値波長を境に、反射と透過が入れ替わる光学特性を有する、ダイクロイックミラー(dichroic mirror)(誘電体多層膜ミラー、多層膜ミラーとも呼ぶ)を用いることができる。特に、あるしきい値波長を境に、これよりも短波長側の光を透過し、長波長側の光を反射する、ショートパスダイクロイックミラー(short pass dichroic mirror)を好適に用いることができる。
波長変換層14G及び波長変換層14R(以下、まとめて波長変換層14とも呼ぶ)としては、蛍光材料、または量子ドット(QD:Quantum dot)を用いることが好ましい。特に、量子ドットは、発光スペクトルのピーク幅が狭く、変換効率が高く、色純度の高い発光を得ることができる。これにより、色再現性が高く、表示品位の高い表示装置を実現できる。
発光素子12Bは、青色の光Bを発する素子である。発光素子12Bとしては、例えば有機EL素子(OLED:Organic Light Emitting Diode)、発光ダイオード(LED:Light Emitting Diode)、QLED(Quantum-dot Light Emitting Diode)、半導体レーザなどの自発光性の発光素子を好適に用いることができる。特に、有機EL素子を用いることが好ましい。なお、発光素子12Bとして、青色の光に加えて、または代えて、近紫外領域の光を発する発光素子を用いることもできる。
以下では、本発明の一態様の表示装置のより具体的な構成例について説明する。
図4(A)は、表示装置100の断面概略図である。図4(A)には、青色の画素120B、緑色の画素120G、及び赤色の画素120Rをそれぞれ示している。
図4(B)に示す表示装置100Aは、拡散層124を有する点で、主に上記表示装置100と相違している。
図5(A)に示す表示装置100Bは、保護層140の構成が異なる点で、上記表示装置100と主に相違している。
図5(B)に示す表示装置100Cは、着色層123G及び着色層123Rを有する点で、上記表示装置100と主に相違している。
図6(A)に示す表示装置100Dは、波長変換層122G、波長変換層122R、及び光学機能層121等が基板102側に設けられている点で、上記表示装置100と主に相違している。
図6(B)に示す表示装置100Eは、着色層123G及び着色層123Rを有する点で、上記表示装置100Dと主に相違している。
図7(A)に示す表示装置100Fは、発光素子110Bとして、下面射出型(ボトムエミッション型)の発光素子を用いた場合の例である。
図7(B)に示す表示装置100Gは、発光素子110Bが設けられる基板と、波長変換層等が設けられる基板とが異なる点で、上記表示装置100Fと主に相違している。
以下では、発光素子としてLED素子を用いた場合の例を示す。
図8(A)に示す表示装置150は、発光素子160Bを有する。発光素子160Bは、青色の光を呈する、フェイスダウン型のLED素子である。フェイスダウン型のLEDを用いることで、遮光性のバンプや電極を発光面とは反対側に配置することができるため、有効発光面積を大きくでき、輝度や信頼性を向上させることができるため好ましい。
図8(B)に示す表示装置150Aは、近紫外または紫色の光を発する発光素子を用いた場合の例を示す。
本実施の形態では、本発明の一態様の表示装置のより具体的な構成例について説明する。
図9(A)に、表示装置700の上面図を示す。表示装置700は、シール材712により貼り合された第1の基板701と第2の基板705を有する。また第1の基板701、第2の基板705、及びシール材712で封止される領域において、第1の基板701上に画素部702、ソースドライバ回路部704、及びゲートドライバ回路部706が設けられる。また画素部702には、複数の表示素子が設けられる。
以下では、表示素子としてEL素子を用いる構成について、図10乃至図12を用いて説明する。なお、図10及び図11は、それぞれ図9(A)に示した表示装置700の、一点鎖線Q-Rにおける断面図である。また、図12は、図9(B)に示した表示装置700Aの、一点鎖線S-Tにおける断面図である。
以下では、表示装置に適用可能なトランジスタ等の構成要素について説明する。
トランジスタは、ゲート電極として機能する導電層と、半導体層と、ソース電極として機能する導電層と、ドレイン電極として機能する導電層と、ゲート絶縁層として機能する絶縁層と、を有する。
以下では、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud-Aligned Composite)-OSの構成について説明する。
トランジスタのゲート、ソースおよびドレインのほか、表示装置を構成する各種配線および電極などの導電層に用いることのできる材料としては、アルミニウム、チタン、クロム、ニッケル、銅、イットリウム、ジルコニウム、モリブデン、銀、タンタル、またはタングステンなどの金属、またはこれを主成分とする合金などが挙げられる。またこれらの材料を含む膜を単層で、または積層構造として用いることができる。例えば、シリコンを含むアルミニウム膜の単層構造、チタン膜上にアルミニウム膜を積層する二層構造、タングステン膜上にアルミニウム膜を積層する二層構造、銅-マグネシウム-アルミニウム合金膜上に銅膜を積層する二層構造、チタン膜上に銅膜を積層する二層構造、タングステン膜上に銅膜を積層する二層構造、チタン膜または窒化チタン膜と、その上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にチタン膜または窒化チタン膜を形成する三層構造、モリブデン膜または窒化モリブデン膜と、その上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にモリブデン膜または窒化モリブデン膜を形成する三層構造等がある。なお、酸化インジウム、酸化錫または酸化亜鉛等の酸化物を用いてもよい。また、マンガンを含む銅を用いると、エッチングによる形状の制御性が高まるため好ましい。
各絶縁層に用いることのできる絶縁材料としては、例えば、アクリル、エポキシなどの樹脂、シロキサン結合を有する樹脂の他、酸化シリコン、酸化窒化シリコン、窒化酸化シリコン、窒化シリコン、酸化アルミニウムなどの無機絶縁材料を用いることもできる。
本実施の形態では、本発明の一態様の表示装置について、図13を用いて説明する。
以下では、本発明の一態様に適用可能な画素に表示される階調を補正するためのメモリを備える画素回路と、これを有する表示装置について説明する。
図14(A)に、画素回路400の回路図を示す。画素回路400は、トランジスタM1、トランジスタM2、容量C1、及び回路401を有する。また画素回路400には、配線S1、配線S2、配線G1、及び配線G2が接続される。
続いて、図14(B)を用いて、画素回路400の動作方法の一例を説明する。図14(B)は、画素回路400の動作に係るタイミングチャートである。なおここでは説明を容易にするため、配線抵抗などの各種抵抗や、トランジスタや配線などの寄生容量、及びトランジスタのしきい値電圧などの影響は考慮しない。
期間T1では、配線G1と配線G2の両方に、トランジスタをオン状態にする電位を与える。また、配線S1には固定電位である電位Vrefを供給し、配線S2には第1データ電位Vwを供給する。
続いて期間T2では、配線G1にはトランジスタM1をオン状態とする電位を与え、配線G2にはトランジスタM2をオフ状態とする電位を与える。また、配線S1には第2データ電位Vdataを供給する。配線S2には所定の定電位を与える、またはフローティング状態としてもよい。
図14(C)に示す画素回路400ELは、回路401ELを有する。回路401ELは、発光素子EL、トランジスタM3、及び容量C2を有する。
本実施の形態では、本発明の一態様を用いて作製することができる表示モジュールについて説明する。
本実施の形態では、本発明の一態様の表示装置を適用可能な、電子機器の例について説明する。
本実施の形態では、本発明の一態様を用いて作製された表示装置を備える電子機器について説明する。
Claims (8)
- 第1の発光素子と、保護層と、光学機能層と、波長変換層と、着色層と、を有し、
前記第1の発光素子を覆う保護層を有し、
前記光学機能層は、前記保護層上に接して設けられ、
前記波長変換層は、前記光学機能層上に接して設けられ、
前記波長変換層は、前記第1の発光素子と重なる領域を有し、
前記着色層は、前記波長変換層の上面及び側面、並びに前記光学機能層の上面に接して設けられ、
前記第1の発光素子は、第1の光を射出する機能を有し、
前記波長変換層は、前記第1の光が入射され、前記第1の光よりも波長の長い第2の光を射出する機能を有し、
前記光学機能層は、前記第1の光を透過し、且つ、前記第2の光を反射する機能を有し、
前記着色層は、前記第2の光を透過し、且つ前記第1の光を遮光する機能を有する、表示装置。 - 第1の発光素子と、第2の発光素子と、保護層と、光学機能層と、波長変換層と、着色層と、を有し、
前記第1の発光素子を覆う保護層を有し、
前記光学機能層は、前記保護層上に接して設けられ、
前記光学機能層は、前記第1の発光素子と重なる領域、及び前記第2の発光素子と重なる領域を有し、
前記波長変換層は、前記光学機能層上に接して設けられ、
前記波長変換層は、前記第1の発光素子と重なる領域を有し、
前記着色層は、前記波長変換層の上面及び側面、並びに前記光学機能層の上面に接して設けられ、
前記第1の発光素子及び前記第2の発光素子は、第1の光を射出する機能を有し、
前記波長変換層は、前記第1の発光素子が発する前記第1の光が入射され、前記第1の光よりも波長の長い第2の光を射出する機能を有し、
前記光学機能層は、前記第1の光を透過し、且つ前記第2の光を反射する機能を有する、
前記着色層は、前記第2の光を透過し、且つ前記第1の光を遮光する機能を有する、表示装置。 - 請求項1または請求項2において、
前記波長変換層は、量子ドットを含む、表示装置。 - 請求項1乃至請求項3のいずれか一において、
前記光学機能層は、少なくとも波長が450nmの光に対する反射率が20%以下であり、且つ、波長が600nmの光に対する反射率が80%以上である、表示装置。 - 請求項1乃至請求項4のいずれか一において、
前記光学機能層は、屈折率の異なる2種類の誘電体膜が交互に積層された、誘電体多層膜である、表示装置。 - 請求項5において、
前記保護層は、無機絶縁材料を含む第1の絶縁膜と、当該第1の絶縁膜上の、有機絶縁材料を含む第2の絶縁膜と、を有し、
前記光学機能層は、前記第2の絶縁膜上に接して設けられる、表示装置。 - 請求項1乃至請求項5のいずれか一において、
前記第1の発光素子上に第1の基板を有し、
前記第1の基板の、前記第1の発光素子側の面に、前記波長変換層と、平坦化層と、前記光学機能層と、が、この順で積層して設けられる、表示装置。 - 請求項7において、
前記第1の基板と、前記波長変換層との間に、着色層を有し、
前記着色層は、前記第2の光を透過し、且つ、前記第1の光を遮光する機能を有する、表示装置。
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- 2019-07-09 JP JP2020530746A patent/JP7432509B2/ja active Active
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US12057531B2 (en) | 2024-08-06 |
JPWO2020016701A1 (ja) | 2021-08-19 |
WO2020016701A1 (ja) | 2020-01-23 |
US20210296543A1 (en) | 2021-09-23 |
US20230378399A1 (en) | 2023-11-23 |
US11626544B2 (en) | 2023-04-11 |
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