JP7431552B2 - センサ、センサシステム、および撮像方法 - Google Patents
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- 230000003287 optical effect Effects 0.000 claims description 6
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- H01L27/144—Devices controlled by radiation
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- H01L27/14649—Infrared imagers
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- G—PHYSICS
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
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- G—PHYSICS
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H04N5/33—Transforming infrared radiation
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
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Description
Claims (13)
- 複数の受動撮像画素、及び
複数の飛行時間(TOF)撮像画素
を含む、センサアレイ
を備え、
前記受動撮像画素及び前記TOF撮像画素がすべて、SWIR照明に対して感度を有し、
前記受動撮像画素が、前記センサアレイ上の前記TOF撮像画素と交互のパターンで配置され、
前記交互のパターンが、前記センサアレイ全体に受動撮像画素の列及びTOF撮像画素の列を交互に含み、
前記受動撮像画素が、それぞれPINフォトダイオードを含んでおり、
前記TOF撮像画素が、それぞれアバランシェフォトダイオードを含む、センサ。 - 前記受動撮像画素及び前記TOF撮像画素が、前記センサアレイ内の半導体の共通層にある、請求項1に記載のセンサ。
- 各TOF撮像画素が、
第1のノードに電気的に接続された定電流源と、
前記第1のノードと接地との間に電気的に接続される積分コンデンサと、
前記第1のノードと第2のノードとの間に電気的に接続されるサンプリングトランジスタと、
フォトダイオードであって、そのフォトダイオードに入射する放射に応答して前記サンプリングトランジスタを介して電気的な接続性を切り替えるために、前記サンプリングトランジスタのベース端子と前記接地との間に電気的に接続される、フォトダイオードと、
を含む、請求項1に記載のセンサ。 - 各TOF画素が、そのTOF画素と視野内の一点との間の距離を表す画素値を生成するように構成される、請求項1に記載のセンサ。
- 複数の受動撮像画素、及び複数の飛行時間(TOF)撮像画素を含む、センサアレイを備えた、請求項1に記載のセンサと、
前記センサアレイに動作可能に接続される読み出し専用集積回路(ROIC)と、
を備える、センサシステムであって、
前記ROICが、
前記受動撮像画素から撮像データを示す電気信号を受信するように各受動撮像画素に動作可能に接続される、それぞれのROIC画素と、
前記TOF撮像画素からTOFを示す電気信号を受信するように各TOF撮像画素に動作可能に接続される、それぞれのROIC画素と、
を含み、
前記受動撮像画素及び前記TOF撮像画素がすべて、SWIR照明に対して感度を有する、センサシステム。 - 前記ROICから受動撮像データ及びTOF撮像データを受信するように、前記ROICに動作可能に接続されたサポートモジュールをさらに備える、請求項5に記載のシステム。
- 前記サポートモジュールが、受動撮像データ及びTOF撮像データを含む混合画像を出力するように構成される、請求項6に記載のシステム。
- 前記サポートモジュールが、受動撮像データ及びTOF撮像データを前記ROICから分離し、受動撮像及びTOF撮像のための別個の画像を出力するように構成される、請求項7に記載のシステム。
- 照明源と、前記照明源及び前記センサアレイに動作可能に接続されてTOF撮像画素積分及び前記照明のパルスを開始するコントローラと、をさらに備え、
前記TOF撮像画素が、前記照明のパルスの飛行時間(TOF)を示す信号を出力する、請求項5に記載のシステム。 - 前記コントローラが、前記照明源を使用してシーンをフラッシュし、前記照明源を使用して前記シーンをフラッシュしながら、前記受動撮像画素からの受動撮像データを収集するように構成される、請求項9に記載のシステム。
- 各TOF画素が、そのTOF画素と視野内の一点との間の距離を表す画素値を生成するように構成される、請求項5に記載のシステム。
- 撮像の方法であって、
請求項1~4のいずれかに記載のセンサにおけるセンサアレイからの受動撮像データを収集することと、
前記センサアレイからの飛行時間(TOF)撮像データを収集することと、
を備える、方法。 - 受動撮像データを収集すること及びTOF撮像データを収集することが、少なくとも部分的に同時に視差のない単一の光軸に沿って実行される、請求項12に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US16/156,392 US10985203B2 (en) | 2018-10-10 | 2018-10-10 | Sensors for simultaneous passive imaging and range finding |
US16/156,392 | 2018-10-10 |
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Publication Number | Publication Date |
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JP2020060568A JP2020060568A (ja) | 2020-04-16 |
JP7431552B2 true JP7431552B2 (ja) | 2024-02-15 |
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US (2) | US10985203B2 (ja) |
EP (1) | EP3637133B1 (ja) |
JP (1) | JP7431552B2 (ja) |
IL (1) | IL269841B2 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070201859A1 (en) | 2006-02-24 | 2007-08-30 | Logitech Europe S.A. | Method and system for use of 3D sensors in an image capture device |
WO2012137434A1 (ja) | 2011-04-07 | 2012-10-11 | パナソニック株式会社 | 立体撮像装置 |
JP2014514733A (ja) | 2011-03-10 | 2014-06-19 | サイオニクス、インク. | 3次元センサ、システム、および関連する方法 |
JP2015007615A (ja) | 2013-05-24 | 2015-01-15 | アドヴァンスド サイエンティフィック コンセプツ,インコーポレイテッドAdvanced Scientific Concepts,Inc. | 自動車補助レーダセンサ |
US20180059224A1 (en) | 2016-08-26 | 2018-03-01 | Samsung Electronics Co., Ltd. | Time-of-flight (tof) image sensor using amplitude modulation for range measurement |
WO2018101049A1 (ja) | 2016-11-29 | 2018-06-07 | パナソニックIpマネジメント株式会社 | 固体撮像装置及び測距撮像装置 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6459450B2 (en) * | 1998-06-24 | 2002-10-01 | Intel Corporation | Infrared filterless pixel structure |
GB2367945B (en) * | 2000-08-16 | 2004-10-20 | Secr Defence | Photodetector circuit |
WO2005072358A2 (en) * | 2004-01-28 | 2005-08-11 | Canesta, Inc. | Single chip red, green, blue, distance (rgb-z) sensor |
US8134637B2 (en) * | 2004-01-28 | 2012-03-13 | Microsoft Corporation | Method and system to increase X-Y resolution in a depth (Z) camera using red, blue, green (RGB) sensing |
US7560679B1 (en) * | 2005-05-10 | 2009-07-14 | Siimpel, Inc. | 3D camera |
US7608823B2 (en) * | 2005-10-03 | 2009-10-27 | Teledyne Scientific & Imaging, Llc | Multimode focal plane array with electrically isolated commons for independent sub-array biasing |
US7760334B1 (en) | 2007-02-27 | 2010-07-20 | Lockheed Martin Corporation | Optical multi-discriminant LADAR |
JP2008268112A (ja) * | 2007-04-24 | 2008-11-06 | Sanyo Electric Co Ltd | センサ |
FR2940463B1 (fr) | 2008-12-23 | 2012-07-27 | Thales Sa | Systeme d'imagerie passive equipe d'un telemetre |
KR101648201B1 (ko) * | 2009-11-04 | 2016-08-12 | 삼성전자주식회사 | 영상 센서 및 이의 제조 방법. |
US9052381B2 (en) | 2010-05-07 | 2015-06-09 | Flir Systems, Inc. | Detector array for high speed sampling of an optical pulse |
US8648702B2 (en) | 2010-08-20 | 2014-02-11 | Denso International America, Inc. | Combined time-of-flight and image sensor systems |
KR101736330B1 (ko) * | 2010-09-03 | 2017-05-30 | 삼성전자주식회사 | 픽셀, 이미지 센서, 및 이를 포함하는 이미지 처리 장치들 |
US20120056988A1 (en) * | 2010-09-07 | 2012-03-08 | David Stanhill | 3-d camera |
IL212289A (en) | 2011-04-13 | 2016-08-31 | Semi-Conductor Devices - An Elbit Systems - Rafael Partnership | Circuit and method for reading image signals |
WO2013104718A2 (en) * | 2012-01-10 | 2013-07-18 | Softkinetic Sensors Nv | Color and non-visible light e.g. ir sensor, namely a multispectral sensor |
US8569700B2 (en) | 2012-03-06 | 2013-10-29 | Omnivision Technologies, Inc. | Image sensor for two-dimensional and three-dimensional image capture |
US9723233B2 (en) * | 2012-04-18 | 2017-08-01 | Brightway Vision Ltd. | Controllable gated sensor |
US9348019B2 (en) * | 2012-11-20 | 2016-05-24 | Visera Technologies Company Limited | Hybrid image-sensing apparatus having filters permitting incident light in infrared region to be passed to time-of-flight pixel |
KR20160025729A (ko) * | 2014-08-28 | 2016-03-09 | 에스케이하이닉스 주식회사 | 깊이 검출 픽셀을 구비한 이미지 센서 및 이를 이용한 깊이 정보 생성 방법 |
US9871065B2 (en) * | 2014-12-22 | 2018-01-16 | Google Inc. | RGBZ pixel unit cell with first and second Z transfer gates |
US9741755B2 (en) * | 2014-12-22 | 2017-08-22 | Google Inc. | Physical layout and structure of RGBZ pixel cell unit for RGBZ image sensor |
US9581696B2 (en) * | 2014-12-22 | 2017-02-28 | Google Inc. | Image sensor and light source driver integrated in a same semiconductor package |
US9608027B2 (en) * | 2015-02-17 | 2017-03-28 | Omnivision Technologies, Inc. | Stacked embedded SPAD image sensor for attached 3D information |
US20160295133A1 (en) * | 2015-04-06 | 2016-10-06 | Heptagon Micro Optics Pte. Ltd. | Cameras having a rgb-ir channel |
US9628735B2 (en) * | 2015-06-22 | 2017-04-18 | Omnivision Technologies, Inc. | Imaging systems with single-photon-avalanche-diodes and sensor translation, and associated methods |
US10861888B2 (en) * | 2015-08-04 | 2020-12-08 | Artilux, Inc. | Silicon germanium imager with photodiode in trench |
WO2017024121A1 (en) * | 2015-08-04 | 2017-02-09 | Artilux Corporation | Germanium-silicon light sensing apparatus |
US10151838B2 (en) * | 2015-11-24 | 2018-12-11 | Microsoft Technology Licensing, Llc | Imaging sensor with shared pixel readout circuitry |
US10394237B2 (en) * | 2016-09-08 | 2019-08-27 | Ford Global Technologies, Llc | Perceiving roadway conditions from fused sensor data |
US10404925B2 (en) | 2016-09-29 | 2019-09-03 | Honeywell International Inc. | Chip scale multispectral imaging and ranging |
US10484623B2 (en) * | 2016-12-20 | 2019-11-19 | Microsoft Technology Licensing, Llc | Sensor with alternating visible and infrared sensitive pixels |
US10007001B1 (en) * | 2017-03-28 | 2018-06-26 | Luminar Technologies, Inc. | Active short-wave infrared four-dimensional camera |
US10312275B2 (en) * | 2017-04-25 | 2019-06-04 | Semiconductor Components Industries, Llc | Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities |
US11233076B2 (en) * | 2017-06-07 | 2022-01-25 | Argo AI, LLC | Geiger-mode focal plane array with monolithically integrated resistors |
FR3075462B1 (fr) * | 2017-12-19 | 2020-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d'acquisition d'une image 2d et d'une image de profondeur d'une scene |
-
2018
- 2018-10-10 US US16/156,392 patent/US10985203B2/en active Active
-
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-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070201859A1 (en) | 2006-02-24 | 2007-08-30 | Logitech Europe S.A. | Method and system for use of 3D sensors in an image capture device |
JP2014514733A (ja) | 2011-03-10 | 2014-06-19 | サイオニクス、インク. | 3次元センサ、システム、および関連する方法 |
WO2012137434A1 (ja) | 2011-04-07 | 2012-10-11 | パナソニック株式会社 | 立体撮像装置 |
JP2015007615A (ja) | 2013-05-24 | 2015-01-15 | アドヴァンスド サイエンティフィック コンセプツ,インコーポレイテッドAdvanced Scientific Concepts,Inc. | 自動車補助レーダセンサ |
US20180059224A1 (en) | 2016-08-26 | 2018-03-01 | Samsung Electronics Co., Ltd. | Time-of-flight (tof) image sensor using amplitude modulation for range measurement |
WO2018101049A1 (ja) | 2016-11-29 | 2018-06-07 | パナソニックIpマネジメント株式会社 | 固体撮像装置及び測距撮像装置 |
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US10985203B2 (en) | 2021-04-20 |
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US20210225925A1 (en) | 2021-07-22 |
JP2020060568A (ja) | 2020-04-16 |
IL269841B2 (en) | 2023-11-01 |
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US11876111B2 (en) | 2024-01-16 |
IL269841B1 (en) | 2023-07-01 |
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