JP7361600B2

JP7361600B2 - Manufacturing method of resonant structure

Info

Publication number: JP7361600B2
Application number: JP2019237337A
Authority: JP
Inventors: 弘志内村; 信樹平松; 雅俊郷; 直橋本
Original assignee: Kyocera Corp
Current assignee: Kyocera Corp
Priority date: 2019-12-26
Filing date: 2019-12-26
Publication date: 2023-10-16
Anticipated expiration: 2039-12-26
Also published as: JP2021106346A; WO2021132195A1

Description

本開示は、共振構造体の製造方法に関する。 The present disclosure relates to a method of manufacturing a resonant structure.

アンテナから放射された電磁波は、金属導体で反射される。金属導体で反射された電磁波は、１８０°の位相ずれが生じる。反射された電磁波は、アンテナから放射された電磁波と合成される。アンテナから放射された電磁波は、位相のずれのある電磁波との合成によって、振幅が小さくなる場合がある。結果、アンテナから放射される電磁波の振幅は、小さくなる。アンテナと金属導体との距離を、放射する電磁波の波長λの１／４とすることで、反射波による影響を低減している。 Electromagnetic waves emitted from an antenna are reflected by a metal conductor. Electromagnetic waves reflected by a metal conductor have a phase shift of 180°. The reflected electromagnetic waves are combined with the electromagnetic waves radiated from the antenna. The amplitude of electromagnetic waves radiated from an antenna may become small due to combination with electromagnetic waves having a phase shift. As a result, the amplitude of electromagnetic waves radiated from the antenna becomes smaller. The influence of reflected waves is reduced by setting the distance between the antenna and the metal conductor to 1/4 of the wavelength λ of the radiated electromagnetic waves.

これに対して、金属導体上でも、電波強度の低下が低減されるアンテナが知られている（特許文献１）。 On the other hand, an antenna is known in which the decrease in radio field intensity is reduced even on a metal conductor (Patent Document 1).

国際公開第２０１８／１７４０２６号International Publication No. 2018/174026

特許文献１に記載のアンテナは、共振構造体を備える。この共振構造体を効率良く製造する方法が求められている。 The antenna described in Patent Document 1 includes a resonant structure. There is a need for a method for efficiently manufacturing this resonant structure.

本開示の目的は、共振構造体を効率良く製造可能な、共振構造体の製造方法を提供することにある。 An object of the present disclosure is to provide a method for manufacturing a resonant structure that can efficiently manufacture the resonant structure.

本開示の一実施形態に係る共振構造体の製造方法は、第１導体と、第２導体と、第３導体と、第４導体とを含む共振構造体の製造方法である。前記第２導体は、第１方向において前記第１導体と対向する。前記第３導体は、前記第１方向に沿って広がり、前記第１導体と前記第２導体との間に位置し、前記第１導体と前記第２導体とを容量的に接続するように構成されている。前記第４導体は、前記第１方向に沿って広がり、前記第１導体及び前記第２導体に電気的に接続されている。前記共振構造体の製造方法は、前記共振構造体に対応する複数のユニットが前記第１方向と交わる第２方向に並ぶ矩形基板を準備することを含む。前記共振構造体の製造方法は、溶融めっき法により、前記矩形基板の第１方向における２つの端部に、前記第１導体に対応する導体及び前記第２導体に対応する導体を形成することを含む。前記共振構造体の製造方法は、前記矩形基板において、前記第２方向において隣り合う前記複数のユニットを前記第１方向に沿って切断することを含む。 A method for manufacturing a resonant structure according to an embodiment of the present disclosure is a method for manufacturing a resonant structure including a first conductor, a second conductor, a third conductor, and a fourth conductor. The second conductor faces the first conductor in a first direction. The third conductor extends along the first direction, is located between the first conductor and the second conductor, and is configured to capacitively connect the first conductor and the second conductor. has been done. The fourth conductor extends along the first direction and is electrically connected to the first conductor and the second conductor. The method for manufacturing the resonant structure includes preparing a rectangular substrate on which a plurality of units corresponding to the resonant structure are arranged in a second direction intersecting the first direction. The method for manufacturing the resonant structure includes forming a conductor corresponding to the first conductor and a conductor corresponding to the second conductor at two ends of the rectangular substrate in the first direction by hot dipping. include. The method for manufacturing the resonant structure includes cutting the plurality of units adjacent to each other in the second direction in the rectangular substrate along the first direction.

本開示の一実施形態に係る共振構造体の製造方法によれば、共振構造体を効率良く製造することができる。 According to the method for manufacturing a resonant structure according to an embodiment of the present disclosure, a resonant structure can be manufactured efficiently.

本開示の一実施形態に係るアンテナの平面図である。FIG. 1 is a plan view of an antenna according to an embodiment of the present disclosure. 図１に示すＬ１－Ｌ１線に沿ったアンテナの断面図である。2 is a cross-sectional view of the antenna taken along the line L1-L1 shown in FIG. 1. FIG. 本開示の一実施形態に係る共振構造体の製造方法の製造工程を示すフローチャートである。1 is a flowchart showing a manufacturing process of a method for manufacturing a resonant structure according to an embodiment of the present disclosure. 本開示の一実施形態に係る積層基板の平面図である。FIG. 1 is a plan view of a laminated substrate according to an embodiment of the present disclosure. 図４に示すＬ２－Ｌ２線に沿った積層基板の断面図である。5 is a cross-sectional view of the laminated substrate taken along the line L2-L2 shown in FIG. 4. FIG. 本開示の一実施形態に係る矩形基板の平面図である。FIG. 2 is a plan view of a rectangular substrate according to an embodiment of the present disclosure. 形成工程後の矩形基板の平面図である。FIG. 3 is a plan view of the rectangular substrate after the formation process. 切断工程を説明する図である。It is a figure explaining a cutting process.

本開示において「誘電体材料」は、セラミック材料及び樹脂材料の何れかを組成として含み得る。セラミック材料は、酸化アルミニウム質焼結体、窒化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミック焼結体、ガラス母材中に結晶成分を析出させた結晶化ガラス、及び、雲母若しくはチタン酸アルミニウム等の微結晶焼結体を含む。樹脂材料は、エポキシ樹脂、ポリエステル樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリエーテルイミド樹脂、及び、液晶ポリマー等の未硬化物を硬化させたものを含む。 In the present disclosure, the "dielectric material" may include either a ceramic material or a resin material as a composition. Ceramic materials include aluminum oxide sintered bodies, aluminum nitride sintered bodies, mullite sintered bodies, glass ceramic sintered bodies, crystallized glass in which crystal components are precipitated in a glass base material, and mica or titanium. Contains microcrystalline sintered bodies such as acid aluminum. The resin material includes cured uncured materials such as epoxy resin, polyester resin, polyimide resin, polyamideimide resin, polyetherimide resin, and liquid crystal polymer.

本開示において「導電性材料」は、金属材料、金属材料の合金、金属ペーストの硬化物、及び、導電性高分子の何れかを組成として含み得る。金属材料は、銅、銀、パラジウム、金、白金、アルミニウム、クロム、ニッケル、カドミウム鉛、セレン、マンガン、錫、バナジウム、リチウム、コバルト、及び、チタン等を含む。合金は、複数の金属材料を含む。金属ペースト剤は、金属材料の粉末を有機溶剤、及び、バインダとともに混練したものを含む。バインダは、エポキシ樹脂、ポリエステル樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、及び、ポリエーテルイミド樹脂を含む。導電性ポリマーは、ポリチオフェン系ポリマー、ポリアセチレン系ポリマー、ポリアニリン系ポリマー、及び、ポリピロール系ポリマー等を含む。 In the present disclosure, the "conductive material" may include any one of a metal material, an alloy of metal materials, a cured product of metal paste, and a conductive polymer. Metal materials include copper, silver, palladium, gold, platinum, aluminum, chromium, nickel, cadmium lead, selenium, manganese, tin, vanadium, lithium, cobalt, titanium, and the like. Alloys include multiple metallic materials. The metal paste agent includes one obtained by kneading a powder of a metal material with an organic solvent and a binder. The binder includes epoxy resin, polyester resin, polyimide resin, polyamideimide resin, and polyetherimide resin. The conductive polymer includes polythiophene-based polymers, polyacetylene-based polymers, polyaniline-based polymers, polypyrrole-based polymers, and the like.

以下、本開示の複数の実施形態について、図面を参照して説明する。図１から図８に示す構成要素において、同じ構成要素には、同じ符号を付す。 Hereinafter, multiple embodiments of the present disclosure will be described with reference to the drawings. In the components shown in FIGS. 1 to 8, the same components are given the same reference numerals.

本開示の実施形態では、ＸＹＺ座標系が採用される。以下、Ｘ軸正方向とＸ軸負方向とを特に区別しない場合、Ｘ軸正方向とＸ軸負方向は、まとめて「Ｘ方向」と記載される。Ｙ軸正方向とＹ軸負方向とを特に区別しない場合、Ｙ軸正方向とＹ軸負方向は、まとめて「Ｙ方向」と記載される。Ｚ軸正方向とＺ軸負方向とを特に区別しない場合、Ｚ軸正方向とＺ軸負方向は、まとめて「Ｚ方向」と記載される。 In embodiments of the present disclosure, an XYZ coordinate system is employed. Hereinafter, unless the X-axis positive direction and the X-axis negative direction are particularly distinguished, the X-axis positive direction and the X-axis negative direction will be collectively referred to as the "X direction." If the Y-axis positive direction and the Y-axis negative direction are not particularly distinguished, the Y-axis positive direction and the Y-axis negative direction are collectively referred to as the "Y direction." If the Z-axis positive direction and the Z-axis negative direction are not particularly distinguished, the Z-axis positive direction and the Z-axis negative direction are collectively referred to as the "Z direction."

以下、第１方向は、Ｘ方向として示す。第２方向は、Ｙ方向として示す。第３方向は、Ｚ方向として示す。第１平面は、ＸＹ平面として示す。ただし、第１方向は、第２方向と直交しなくてよい。第１方向は、第２方向と交わればよい。第３方向は、第１平面と直交しなくてよい。第３方向は、第１平面と交わればよい。 Hereinafter, the first direction will be referred to as the X direction. The second direction is shown as the Y direction. The third direction is shown as the Z direction. The first plane is shown as the XY plane. However, the first direction does not have to be perpendicular to the second direction. The first direction may intersect with the second direction. The third direction does not have to be orthogonal to the first plane. The third direction may intersect with the first plane.

図１は、本開示の一実施形態に係るアンテナ１の平面図である。図２は、図１に示すアンテナ１の断面図である。 FIG. 1 is a plan view of an antenna 1 according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view of the antenna 1 shown in FIG.

図１に示すように、アンテナ１は、共振構造体１０と、給電線７０とを含む。図１及び図２に示すように、共振構造体１０は、基体２０と、第１導体３０と、第２導体４０と、第３導体５０と、第４導体６０とを含む。第１導体３０と第２導体４０とは、対導体ともいう。第１導体３０、第２導体４０、第３導体５０、第４導体６０及び給電線７０の各々は、導電性材料を含む。第１導体３０と、第２導体４０と、第３導体５０と、第４導体６０と、給電線７０とは、同じ導電性材料を含んでよいし、異なる導電性材料を含んでよい。 As shown in FIG. 1, the antenna 1 includes a resonant structure 10 and a feed line 70. As shown in FIGS. 1 and 2, the resonant structure 10 includes a base 20, a first conductor 30, a second conductor 40, a third conductor 50, and a fourth conductor 60. The first conductor 30 and the second conductor 40 are also referred to as pair conductors. Each of the first conductor 30, the second conductor 40, the third conductor 50, the fourth conductor 60, and the power supply line 70 includes a conductive material. The first conductor 30, the second conductor 40, the third conductor 50, the fourth conductor 60, and the power supply line 70 may contain the same conductive material or may contain different conductive materials.

アンテナ１は、外部から第３導体５０が位置する共振構造体１０の面に入射する所定周波数の電磁波に対して、人工磁気壁特性（Artificial Magnetic Conductor Character）を示し得る。 The antenna 1 can exhibit an artificial magnetic conductor characteristic with respect to electromagnetic waves of a predetermined frequency that are incident on the surface of the resonant structure 10 on which the third conductor 50 is located from the outside.

本開示において「人工磁気壁特性」は、１つの共振周波数における入射波と反射波との位相差が０度となる面の特性を意味する。アンテナ１は、少なくとも１つの共振周波数のうちの少なくとも１つの近傍を動作周波数とし得る。人工磁気壁特性を有する面では、動作周波数帯において、入射波と反射波の位相差が－９０度から＋９０度までの範囲より小さくなる。 In the present disclosure, "artificial magnetic wall characteristics" means characteristics of a surface where the phase difference between an incident wave and a reflected wave at one resonance frequency is 0 degrees. The antenna 1 may have an operating frequency near at least one of the at least one resonant frequency. On a surface having artificial magnetic wall characteristics, the phase difference between the incident wave and the reflected wave is smaller than the range from -90 degrees to +90 degrees in the operating frequency band.

基体２０は、誘電体材料を含む。基体２０は、第３導体５０等の形状に応じた、任意の形状であってよい。基体２０は、略直方体形状であってよい。基体２０の比誘電率は、アンテナ１の所望の動作周波数に応じて、適宜調整されてよい。 Base 20 includes a dielectric material. The base 20 may have any shape depending on the shape of the third conductor 50 and the like. The base body 20 may have a substantially rectangular parallelepiped shape. The dielectric constant of the base 20 may be adjusted as appropriate depending on the desired operating frequency of the antenna 1.

第１導体３０は、Ｘ方向において第２導体４０と対向する。第１導体３０は、基体２０のＸ軸負方向側の端部に位置してよい。第１導体３０は、Ｙ方向に沿う。第１導体３０は、少なくとも１つの第１接続導体３１と、接続部３２とを含む。本実施形態では、第１導体３０は、２つの第１接続導体３１を含む。ただし、第１導体３０は、３つ以上の第１接続導体３１を含んでよい。第１接続導体３１と、接続部３２とは、同じ導電性材料を含んでよいし、異なる導電性材料を含んでよい。 The first conductor 30 faces the second conductor 40 in the X direction. The first conductor 30 may be located at the end of the base 20 on the negative side of the X-axis. The first conductor 30 extends along the Y direction. The first conductor 30 includes at least one first connection conductor 31 and a connection portion 32 . In this embodiment, the first conductor 30 includes two first connection conductors 31. However, the first conductor 30 may include three or more first connection conductors 31. The first connection conductor 31 and the connection portion 32 may contain the same conductive material or may contain different conductive materials.

図１に示すように、複数の第１接続導体３１は、Ｙ方向に並ぶ。第１導体３０が３つ以上の第１接続導体３１を含む場合、複数の第１接続導体３１は、略等間隔で、Ｙ方向に並んでよい。図２に示すように、第１接続導体３１は、Ｚ方向に沿って延びる。 As shown in FIG. 1, the plurality of first connection conductors 31 are arranged in the Y direction. When the first conductor 30 includes three or more first connection conductors 31, the plurality of first connection conductors 31 may be arranged in the Y direction at approximately equal intervals. As shown in FIG. 2, the first connection conductor 31 extends along the Z direction.

第１接続導体３１は、第３導体５０と第４導体６０とを電気的に接続するように、構成されている。例えば、第１接続導体３１は、２つの端部を含む。第１接続導体３１の一方の端部は、第３導体５０の後述の接続部５４に電気的に接続されるように、構成されている。第１接続導体３１の他方の端部は、第４導体６０のＸ軸負方向側の一部に電気的に接続されるように、構成されている。第１接続導体３１は、スルーホール導体又はビア導体等であってよい。 The first connection conductor 31 is configured to electrically connect the third conductor 50 and the fourth conductor 60. For example, the first connection conductor 31 includes two ends. One end of the first connecting conductor 31 is configured to be electrically connected to a connecting portion 54 of the third conductor 50, which will be described later. The other end of the first connection conductor 31 is configured to be electrically connected to a portion of the fourth conductor 60 on the negative side of the X-axis. The first connection conductor 31 may be a through-hole conductor, a via conductor, or the like.

図２に示すように、接続部３２は、共振構造体１０の断面視において、共振構造体１０のＸ軸負方向側の端部をＵ字状に囲む。例えば、接続部３２は、ＸＹ平面に広がる部分３３及び部分３４と、ＹＺ平面に広がる部分３５とを含む。部分３３と、部分３４と、部分３５とは、一体である。部分３３は、第３導体５０の後述の接続部５４上に位置する。部分３３は、接続部５４に電気的に接続されるように、構成されている。部分３４は、第４導体６０のＸ軸負方向側の一部上に位置する。部分３４は、第４導体６０のＸ軸負方向側の一部に電気的に接続されるように、構成されている。部分３５は、基体２０のＸ軸負方向側の面上に位置する。部分３５は、第３導体５０の後述の接続部５６のＸ軸負方向側の端部に電気的に接続されるように、構成されている。 As shown in FIG. 2, the connecting portion 32 surrounds the end of the resonant structure 10 on the X-axis negative direction side in a U-shape in a cross-sectional view of the resonant structure 10. For example, the connecting portion 32 includes a portion 33 and a portion 34 extending in the XY plane, and a portion 35 extending in the YZ plane. Portion 33, portion 34, and portion 35 are integral. The portion 33 is located on a connecting portion 54 of the third conductor 50, which will be described later. Portion 33 is configured to be electrically connected to connection portion 54 . The portion 34 is located on a portion of the fourth conductor 60 on the negative side of the X-axis. The portion 34 is configured to be electrically connected to a portion of the fourth conductor 60 on the negative side of the X-axis. The portion 35 is located on the surface of the base body 20 on the negative side of the X-axis. The portion 35 is configured to be electrically connected to an end portion of the third conductor 50 on the X-axis negative direction side of a connecting portion 56, which will be described later.

接続部３２が共振構造体１０のＸ軸負方向側の端部をＵ字状に囲むことにより、共振構造体１０のＸ軸負方向側の端部の厚みが増し得る。共振構造体１０のＸ軸負方向側の端部の厚みが増すことにより、共振構造体１０のＸ軸負方向側の端部は、変形しにくくなり得る。共振構造体１０のＸ軸負方向側の端部が変形しにくくなることにより、第１接続導体３１にかかる応力が低減され得る。第１接続導体３１にかかる応力が低減されることにより、第１接続導体３１が破損する可能性が低減され得る。 By surrounding the end of the resonant structure 10 on the negative side of the X-axis in a U-shape, the thickness of the end of the resonant structure 10 on the negative side of the X-axis can be increased. By increasing the thickness of the end of the resonant structure 10 on the negative side of the X-axis, the end of the resonant structure 10 on the negative side of the X-axis may become difficult to deform. Since the end of the resonant structure 10 on the negative side of the X-axis is less likely to deform, the stress applied to the first connection conductor 31 can be reduced. By reducing the stress applied to the first connection conductor 31, the possibility that the first connection conductor 31 will be damaged can be reduced.

図１に示すように、第２導体４０は、Ｘ方向において第１導体３０と対向する。第２導体４０は、基体２０のＸ軸正方向側の端部に位置してよい。第２導体４０は、Ｙ方向に沿う。第２導体４０は、少なくとも１つの第２接続導体４１と、接続部４２とを含む。本実施形態では、第２導体４０は、２つの第２接続導体４１を含む。ただし、第２導体４０は、３つ以上の第２接続導体４１を含んでよい。第２接続導体４１と、接続部４２とは、同じ導電性材料を含んでよいし、異なる導電性材料を含んでよい。 As shown in FIG. 1, the second conductor 40 faces the first conductor 30 in the X direction. The second conductor 40 may be located at the end of the base 20 on the X-axis positive direction side. The second conductor 40 extends along the Y direction. The second conductor 40 includes at least one second connection conductor 41 and a connection portion 42 . In this embodiment, the second conductor 40 includes two second connection conductors 41. However, the second conductor 40 may include three or more second connection conductors 41. The second connection conductor 41 and the connection portion 42 may contain the same conductive material or may contain different conductive materials.

複数の第２接続導体４１は、Ｙ方向に並ぶ。第２導体４０が３つ以上の第２接続導体４１を含む場合、複数の第２接続導体４１は、略等間隔で、Ｙ方向に並んでよい。図２に示すように、第２接続導体４１は、Ｚ方向に沿って延びる。 The plurality of second connection conductors 41 are arranged in the Y direction. When the second conductor 40 includes three or more second connection conductors 41, the plurality of second connection conductors 41 may be arranged at approximately equal intervals in the Y direction. As shown in FIG. 2, the second connection conductor 41 extends along the Z direction.

第２接続導体４１は、第３導体５０と第４導体６０とを電気的に接続するように、構成されている。例えば、第２接続導体４１は、２つの端部を含む。第２接続導体４１の一方の端部は、第３導体５０の後述の接続部５５に電気的に接続されるように、構成されている。第２接続導体４１の他方の端部は、第４導体６０のＸ軸正方向側の一部に電気的に接続されるように、構成されている。第２接続導体４１は、スルーホール導体又はビア導体等であってよい。 The second connection conductor 41 is configured to electrically connect the third conductor 50 and the fourth conductor 60. For example, the second connection conductor 41 includes two ends. One end of the second connection conductor 41 is configured to be electrically connected to a connection portion 55 of the third conductor 50, which will be described later. The other end of the second connection conductor 41 is configured to be electrically connected to a portion of the fourth conductor 60 on the X-axis positive direction side. The second connection conductor 41 may be a through-hole conductor, a via conductor, or the like.

図２に示すように、接続部４２は、共振構造体１０の断面視において、共振構造体１０のＸ軸正方向側の端部をＵ字状に囲む。例えば、接続部４２は、ＸＹ平面に広がる部分４３及び部分４４と、ＹＺ平面に広がる部分４５とを含む。部分４３と、部分４４と、部分４５とは、一体である。部分４３は、第３導体５０の後述の接続部５５上に位置する。部分４３は、接続部５５に電気的に接続されるように、構成されている。部分４４は、第４導体６０のＸ軸正方向側の一部上に位置する。部分４４は、第４導体６０のＸ軸正方向側の一部に電気的に接続されるように、構成されている。部分４５は、基体２０のＸ軸正方向側の面上に位置する。部分４５は、第３導体５０の後述の接続部５７のＸ軸正方向側の端部に電気的に接続されるように、構成されている。 As shown in FIG. 2, the connecting portion 42 surrounds the end of the resonant structure 10 on the X-axis positive direction side in a U-shape in a cross-sectional view of the resonant structure 10. For example, the connecting portion 42 includes a portion 43 and a portion 44 that extend in the XY plane, and a portion 45 that extends in the YZ plane. Portion 43, portion 44, and portion 45 are integral. The portion 43 is located on a connection portion 55 of the third conductor 50, which will be described later. Portion 43 is configured to be electrically connected to connection portion 55 . The portion 44 is located on a portion of the fourth conductor 60 on the positive X-axis side. The portion 44 is configured to be electrically connected to a portion of the fourth conductor 60 on the positive side of the X-axis. The portion 45 is located on the surface of the base body 20 on the positive side of the X-axis. The portion 45 is configured to be electrically connected to an end portion of the third conductor 50 on the X-axis positive direction side of a connecting portion 57, which will be described later.

接続部４２が共振構造体１０のＸ軸正方向側の端部をＵ字状に囲むことにより、共振構造体１０のＸ軸正方向側の端部の厚みが増し得る。共振構造体１０のＸ軸正方向側の端部の厚みが増すことにより、共振構造体１０のＸ軸正方向側の端部は、変形しにくくなり得る。共振構造体１０のＸ軸正方向側の端部が変形しにくくなることにより、第２接続導体４１にかかる応力が低減され得る。第２接続導体４１にかかる応力が低減されることにより、第２接続導体４１が破損する可能性が低減され得る。 By surrounding the end of the resonant structure 10 in the positive X-axis direction in a U-shape, the thickness of the end of the resonant structure 10 in the positive X-axis direction can be increased. By increasing the thickness of the end of the resonant structure 10 on the X-axis positive direction, the end of the resonant structure 10 on the X-axis positive direction may become difficult to deform. Since the end portion of the resonant structure 10 on the X-axis positive direction side is less likely to deform, the stress applied to the second connection conductor 41 can be reduced. By reducing the stress applied to the second connection conductor 41, the possibility that the second connection conductor 41 will be damaged can be reduced.

第３導体５０は、Ｘ方向に沿う。第３導体５０は、Ｘ方向に沿って広がってよい。第３導体５０は、ＸＹ平面に沿って広がってよい。第３導体５０は、第１導体３０と第２導体４０との間に位置する。第３導体５０は、第５導体５１と、第６導体５２とを含む。第３導体５０は、内導体５３と、接続部５４，５５，５６，５７とを含んでよい。第５導体５１と、第６導体５２と、内導体５３と、接続部５４～５７とは、同じ導電性材料を含んでよいし、異なる導電性材料を含んでよい。 The third conductor 50 extends along the X direction. The third conductor 50 may extend along the X direction. The third conductor 50 may extend along the XY plane. The third conductor 50 is located between the first conductor 30 and the second conductor 40. The third conductor 50 includes a fifth conductor 51 and a sixth conductor 52. The third conductor 50 may include an inner conductor 53 and connection parts 54, 55, 56, and 57. The fifth conductor 51, the sixth conductor 52, the inner conductor 53, and the connecting portions 54 to 57 may contain the same conductive material or may contain different conductive materials.

第５導体５１及び第６導体５２は、基体２０の上面に位置する。第５導体５１の一部及び第６導体５２の一部は、基体２０の中に位置してよい。第５導体５１と第６導体５２とは、Ｘ方向に並ぶ。第５導体５１及び第６導体５２は、略長方形状であってよい。 The fifth conductor 51 and the sixth conductor 52 are located on the upper surface of the base 20. A portion of the fifth conductor 51 and a portion of the sixth conductor 52 may be located within the base body 20. The fifth conductor 51 and the sixth conductor 52 are arranged in the X direction. The fifth conductor 51 and the sixth conductor 52 may have a substantially rectangular shape.

第５導体５１は、端部５１ａ，５１ｂを含む。端部５１ａは、第５導体５１のＸ軸正方向側に位置する。端部５１ｂは、第５導体５１のＸ軸負方向側に位置する。端部５１ａ，５１ｂは、Ｙ方向に沿う。 The fifth conductor 51 includes end portions 51a and 51b. The end portion 51a is located on the X-axis positive direction side of the fifth conductor 51. The end portion 51b is located on the X-axis negative direction side of the fifth conductor 51. The ends 51a and 51b are along the Y direction.

第６導体５２は、端部５２ａ，５２ｂを含む。端部５２ａは、第６導体５２のＸ軸負方向側に位置する。端部５２ｂは、第６導体５２のＸ軸正方向側に位置する。端部５２ａ，５２ｂは、Ｙ方向に沿う。 The sixth conductor 52 includes end portions 52a and 52b. The end portion 52a is located on the X-axis negative direction side of the sixth conductor 52. The end portion 52b is located on the X-axis positive direction side of the sixth conductor 52. The ends 52a and 52b are along the Y direction.

第５導体５１の端部５１ａと、第６導体５２の端部５２ａとは、Ｘ方向において、隙間を空けて対向する。端部５１ａと端部５２ａとが隙間を空けて対向することにより、第５導体５１と第６導体５２とは、容量的に接続されるように、構成されている。端部５１ａと端部５２ａとの間の隙間は、アンテナ１の所望の動作周波数を考慮して、適宜選択されてよい。 The end 51a of the fifth conductor 51 and the end 52a of the sixth conductor 52 face each other with a gap in the X direction. The fifth conductor 51 and the sixth conductor 52 are configured to be capacitively connected by the end portion 51a and the end portion 52a facing each other with a gap between them. The gap between the end portion 51a and the end portion 52a may be appropriately selected in consideration of the desired operating frequency of the antenna 1.

第５導体５１の端部５１ｂは、接続部５４に電気的に接続されるように、構成されている。第５導体５１と接続部５４とは、一体化されてよい。第６導体５２の端部５２ｂは、接続部５５に電気的に接続されるように、構成されている。第６導体５２と接続部５５とは、一体化されてよい。 The end portion 51b of the fifth conductor 51 is configured to be electrically connected to the connection portion 54. The fifth conductor 51 and the connecting portion 54 may be integrated. The end portion 52b of the sixth conductor 52 is configured to be electrically connected to the connection portion 55. The sixth conductor 52 and the connecting portion 55 may be integrated.

第５導体５１のＹ方向における幅は、Ｙ方向に並ぶ複数の第１接続導体３１のうちの、Ｙ方向において両端に位置する第１接続導体３１の間隔よりも狭くてよい。このような構成により、アンテナ１は、Ｙ方向において両端に位置する第１接続導体３１の間隔にばらつきが生じても、当該ばらつきによるアンテナ特性の変動が小さくなり得る。第６導体５２のＹ方向における幅は、Ｙ方向に並ぶ複数の第２接続導体４１のうちの、Ｙ方向において両端に位置する第２接続導体４１の間隔よりも、狭くてよい。このような構成により、アンテナ１は、Ｙ方向において両端に位置する複数の第２接続導体４１の間隔にばらつきが生じても、当該ばらつきによるアンテナ特性の変動が小さくなり得る。 The width of the fifth conductor 51 in the Y direction may be narrower than the interval between the first connecting conductors 31 located at both ends in the Y direction, among the plurality of first connecting conductors 31 arranged in the Y direction. With such a configuration, in the antenna 1, even if variations occur in the spacing between the first connection conductors 31 located at both ends in the Y direction, fluctuations in antenna characteristics due to the variations can be reduced. The width of the sixth conductor 52 in the Y direction may be narrower than the interval between the second connecting conductors 41 located at both ends in the Y direction, of the plurality of second connecting conductors 41 arranged in the Y direction. With such a configuration, in the antenna 1, even if variations occur in the intervals between the plurality of second connection conductors 41 located at both ends in the Y direction, fluctuations in antenna characteristics due to the variations can be reduced.

第５導体５１の構造及び第６導体５２の構造は、アンテナ１の所望の動作周波数に応じて、適宜調整されてよい。アンテナ１の動作周波数は、第５導体５１及び第６導体５２の構造に応じて、変化し得る。第５導体５１の端部５１ｂから第６導体５２の端部５２ｂまでの長さＡは、後述の図６に示すような第１領域２０１のＸ方向における長さＢ、及び、後述の図６に示すような第２領域２０２のＸ方向における長さＣよりも、長くてよい。長さＡが長さＢ及び長さＣよりも長くなることにより、後述のように、アンテナ１の動作周波数の設計値からのずれ量が低減され得る。 The structure of the fifth conductor 51 and the structure of the sixth conductor 52 may be adjusted as appropriate depending on the desired operating frequency of the antenna 1. The operating frequency of the antenna 1 may vary depending on the structure of the fifth conductor 51 and the sixth conductor 52. The length A from the end 51b of the fifth conductor 51 to the end 52b of the sixth conductor 52 is the length B of the first region 201 in the X direction as shown in FIG. It may be longer than the length C of the second region 202 in the X direction as shown in FIG. By making the length A longer than the lengths B and C, the amount of deviation of the operating frequency of the antenna 1 from the designed value can be reduced, as will be described later.

図２に示すように、内導体５３は、基体２０の中に位置する。内導体５３は、第５導体５１及び第６導体５２に接続されていない。内導体５３は、第５導体５１及び第６導体５２よりも、Ｚ軸負方向側に位置する。図１に示すように、内導体５３は、略長方形状であってよい。 As shown in FIG. 2, the inner conductor 53 is located within the base body 20. The inner conductor 53 is not connected to the fifth conductor 51 and the sixth conductor 52. The inner conductor 53 is located closer to the Z-axis negative direction than the fifth conductor 51 and the sixth conductor 52. As shown in FIG. 1, the inner conductor 53 may have a substantially rectangular shape.

内導体５３は、第５導体５１と第６導体５２とを容量的に接続するように、構成されている。例えば、Ｚ方向において、内導体５３は、第５導体５１及び第６導体５２から離れている。ＸＹ平面において、内導体５３の一部は、第５導体５１の一部に重なり得る。ＸＹ平面において、内導体５３の他の一部は、第６導体５２の一部に重なり得る。内導体５３は、第５導体５１の一部及び第６導体５２の一部に重なることにより、第５導体５１の一部及び第６導体５２の一部に容量的に接続され得る。 The inner conductor 53 is configured to connect the fifth conductor 51 and the sixth conductor 52 capacitively. For example, the inner conductor 53 is separated from the fifth conductor 51 and the sixth conductor 52 in the Z direction. A portion of the inner conductor 53 may overlap a portion of the fifth conductor 51 in the XY plane. In the XY plane, another part of the inner conductor 53 may overlap a part of the sixth conductor 52. The inner conductor 53 can be capacitively connected to a portion of the fifth conductor 51 and a portion of the sixth conductor 52 by overlapping a portion of the fifth conductor 51 and a portion of the sixth conductor 52.

接続部５４及び接続部５５は、基体２０の上面に位置する。接続部５４は、基体２０の上面のＸ軸負方向側に位置する。接続部５５は、基体２０の上面のＸ軸正方向側に位置する。接続部５４の一部及び接続部５５の一部は、基体２０の中に位置してよい。 The connecting portion 54 and the connecting portion 55 are located on the upper surface of the base 20. The connecting portion 54 is located on the upper surface of the base 20 in the negative direction of the X-axis. The connecting portion 55 is located on the upper surface of the base 20 in the positive direction of the X-axis. A portion of the connection portion 54 and a portion of the connection portion 55 may be located within the base body 20.

接続部５４は、第５導体５１の端部５１ｂに電気的に接続されるように、構成されている。接続部５４は、第５導体５１と一体化されてよい。接続部５４のＹ方向における幅は、第５導体５１のＹ方向における幅よりも、広くてよい。接続部５４は、接続部５４上に部分３３が接することにより、及び、接続部５４のＸ軸負方向側の端部に部分３５が接することにより、接続部３２に電気的に接続されるように構成されている。接続部５４は、接続部５４を第１接続導体３１が貫通することにより、第１接続導体３１に電気的に接続されるように、構成されている。 The connecting portion 54 is configured to be electrically connected to the end portion 51b of the fifth conductor 51. The connecting portion 54 may be integrated with the fifth conductor 51. The width of the connecting portion 54 in the Y direction may be wider than the width of the fifth conductor 51 in the Y direction. The connecting portion 54 is electrically connected to the connecting portion 32 by the portion 33 coming into contact with the connecting portion 54 and by the portion 35 coming into contact with the end of the connecting portion 54 on the negative side of the X axis. It is composed of The connecting portion 54 is configured to be electrically connected to the first connecting conductor 31 by passing the first connecting conductor 31 through the connecting portion 54 .

接続部５５は、第６導体５２の端部５２ｂに電気的に接続されるように、構成されている。接続部５５は、第６導体５２と一体化されてよい。接続部５５のＹ方向における幅は、第６導体５２のＹ方向における幅よりも、広くてよい。接続部５５は、接続部５５上に部分４３が接することにより、及び、接続部５５のＸ軸正方向側の端部に部分４５が接することにより、接続部４２に電気的に接続されるように構成されている。接続部５５は、接続部５５を第２接続導体４１が貫通することにより、第２接続導体４１に電気的に接続されるように、構成されている。 The connecting portion 55 is configured to be electrically connected to the end portion 52b of the sixth conductor 52. The connecting portion 55 may be integrated with the sixth conductor 52. The width of the connecting portion 55 in the Y direction may be wider than the width of the sixth conductor 52 in the Y direction. The connecting portion 55 is electrically connected to the connecting portion 42 by the portion 43 coming into contact with the connecting portion 55 and by the portion 45 coming into contact with the end of the connecting portion 55 on the X-axis positive direction side. It is composed of The connecting portion 55 is configured to be electrically connected to the second connecting conductor 41 by passing the second connecting conductor 41 through the connecting portion 55 .

接続部５６及び接続部５７は、基体２０の内部に位置する。接続部５６は、接続部５４よりも、Ｚ軸負方向側に位置する。接続部５７は、接続部５５よりも、Ｚ軸負方向側に位置する。接続部５６は、接続部５６を第１接続導体３１が貫通することにより、第１接続導体３１に電気的に接続されるように、構成されている。接続部５７は、接続部５７を第２接続導体４１が貫通することにより、第２接続導体４１に電気的に接続されるように、構成されている。接続部５６は、接続部５６のＸ軸負方向側の端部に部分３５が接することにより、接続部３２に電気的に接続されるように、構成されている。接続部５７は、接続部５７のＸ軸正方向側の端部に部分４５が接することにより、接続部４２に電気的に接続されるように、構成されている。 The connecting portion 56 and the connecting portion 57 are located inside the base body 20. The connecting portion 56 is located on the negative side of the Z-axis relative to the connecting portion 54 . The connecting portion 57 is located on the negative side of the Z-axis relative to the connecting portion 55. The connecting portion 56 is configured to be electrically connected to the first connecting conductor 31 by passing the first connecting conductor 31 through the connecting portion 56 . The connecting portion 57 is configured to be electrically connected to the second connecting conductor 41 by passing the second connecting conductor 41 through the connecting portion 57 . The connecting portion 56 is configured to be electrically connected to the connecting portion 32 by the portion 35 coming into contact with the end of the connecting portion 56 on the X-axis negative direction side. The connecting portion 57 is configured to be electrically connected to the connecting portion 42 by the portion 45 coming into contact with the end of the connecting portion 57 on the X-axis positive direction side.

接続部５４と接続部５６とは、Ｚ方向に沿って並ぶ。Ｚ方向において接続部５４と接続部５６とが並ぶ間隔は、共振構造体１０の共振周波数の波長の１／２以下であってよい。接続部５５と接続部５７とは、Ｚ方向に沿って並ぶ。Ｚ方向において接続部５５と接続部５７とが並ぶ間隔は、共振構造体１０の共振周波数の波長の１／２以下であってよい。このような構成により、第１導体３０及び第２導体４０の各々から共振構造体１０の外部へ、共振周波数を含む所定周波数帯の電磁波が漏れることが低減され得る。共振構造体１０の外部へ所定周波数帯の電磁波が漏れることが低減されることにより、第１導体３０及び第２導体４０は、後述の電気壁として、より機能し得る。 The connecting portion 54 and the connecting portion 56 are arranged along the Z direction. The spacing between the connecting portions 54 and 56 in the Z direction may be equal to or less than 1/2 of the wavelength of the resonant frequency of the resonant structure 10. The connecting portion 55 and the connecting portion 57 are arranged along the Z direction. The spacing between the connecting portions 55 and 57 in the Z direction may be equal to or less than 1/2 of the wavelength of the resonant frequency of the resonant structure 10 . Such a configuration can reduce leakage of electromagnetic waves in a predetermined frequency band including the resonant frequency from each of the first conductor 30 and the second conductor 40 to the outside of the resonant structure 10. By reducing leakage of electromagnetic waves in a predetermined frequency band to the outside of the resonant structure 10, the first conductor 30 and the second conductor 40 can better function as an electric wall, which will be described later.

第３導体５０は、第１導体３０と第２導体４０とを容量的に接続するように、構成されている。例えば、第３導体５０は、上述のように、接続部５４及び接続部５６によって、第１導体３０に電気的に接続されるように、構成されている。第３導体５０は、上述のように、接続部５５及び接続部５７によって、第２導体４０に電気的に接続されるように、構成されている。接続部５４，５６に電気的に接続された第１導体３０と、接続部５５，５７に電気的に接続された第２導体４０とは、第５導体５１と第６導体５２とが容量的に接続されることにより、容量的に接続され得る。 The third conductor 50 is configured to capacitively connect the first conductor 30 and the second conductor 40. For example, the third conductor 50 is configured to be electrically connected to the first conductor 30 through the connecting portion 54 and the connecting portion 56, as described above. The third conductor 50 is configured to be electrically connected to the second conductor 40 through the connecting portion 55 and the connecting portion 57, as described above. The first conductor 30 electrically connected to the connecting parts 54 and 56 and the second conductor 40 electrically connected to the connecting parts 55 and 57 have a capacitance between the fifth conductor 51 and the sixth conductor 52. can be capacitively connected by being connected to.

第４導体６０は、Ｘ方向に沿っている。第４導体６０は、Ｘ方向に沿って広がってよい。第４導体６０は、ＸＹ平面に沿って広がってよい。第４導体６０は、第３導体５０から離れている。第４導体６０は、Ｚ方向において、第３導体５０と対向してよい。第４導体６０は、基体２０の下面に位置してよい。第４導体６０の一部は、基体２０の中に位置してよい。第４導体６０は、第３導体５０の形状に応じた、任意の形状であってよい。第４導体６０は、略長方形状であってよい。 The fourth conductor 60 is along the X direction. The fourth conductor 60 may extend along the X direction. The fourth conductor 60 may extend along the XY plane. The fourth conductor 60 is separated from the third conductor 50. The fourth conductor 60 may face the third conductor 50 in the Z direction. The fourth conductor 60 may be located on the lower surface of the base 20. A portion of the fourth conductor 60 may be located within the base body 20. The fourth conductor 60 may have any shape depending on the shape of the third conductor 50. The fourth conductor 60 may have a substantially rectangular shape.

第４導体６０は、第１導体３０及び第２導体４０に電気的に接続されるように、構成されている。例えば、第４導体６０は、第４導体６０を第１接続導体３１が貫通することにより、第１接続導体３１に電気的に接続されるように構成されている。第４導体６０は、第４導体のＸ軸負方向側の端部に部分３５が接することにより、接続部３２に電気的に接続されるように、構成されている。第４導体６０は、第４導体６０を第２接続導体４１が貫通することにより、第２接続導体４１に電気的に接続されるように、構成されている。第４導体６０は、第４導体のＸ軸正方向側の端部に部分４５が接することにより、接続部４２に電気的に接続されるように、構成されている。 The fourth conductor 60 is configured to be electrically connected to the first conductor 30 and the second conductor 40. For example, the fourth conductor 60 is configured to be electrically connected to the first connecting conductor 31 by passing the first connecting conductor 31 through the fourth conductor 60 . The fourth conductor 60 is configured to be electrically connected to the connecting portion 32 by the portion 35 coming into contact with the end of the fourth conductor on the X-axis negative direction side. The fourth conductor 60 is configured to be electrically connected to the second connecting conductor 41 by passing the second connecting conductor 41 through the fourth conductor 60 . The fourth conductor 60 is configured to be electrically connected to the connecting portion 42 by the portion 45 coming into contact with the end of the fourth conductor on the X-axis positive direction side.

第４導体６０は、アンテナ１において基準となる電位を提供するように、構成されている。第４導体６０は、アンテナ１を備える機器のグラウンドに電気的に接続されるように構成されていてよい。第４導体６０のＺ軸負方向側には、アンテナ１を備える機器の多様な部品が位置してよい。アンテナ１は、当該多様な部品が第４導体６０のＺ軸負方向側に位置しても、上述の人工磁気壁特性を有することにより、動作周波数での放射効率を維持し得る。 The fourth conductor 60 is configured to provide a reference potential in the antenna 1. The fourth conductor 60 may be configured to be electrically connected to the ground of a device including the antenna 1. Various components of a device including the antenna 1 may be located on the negative Z-axis side of the fourth conductor 60. Even if the various components are located on the negative Z-axis side of the fourth conductor 60, the antenna 1 can maintain radiation efficiency at the operating frequency by having the above-mentioned artificial magnetic wall characteristics.

給電線７０は、第３導体５０に電磁気的に接続されるように、構成されている。本開示において「電磁気的な接続」は、電気的な接続又は磁気的な接続であってよい。本実施形態では、給電線７０の一端は、第３導体５０の第６導体５２に電気的に接続されるように、構成されている。給電線７０の他端は、アンテナ１を備える機器のＲＦ（Radio Frequency）モジュール等に電気的に接続されるように、構成されてよい。給電線７０の一部は、基体２０の上面に位置してよい。 The power supply line 70 is configured to be electromagnetically connected to the third conductor 50. In this disclosure, an "electromagnetic connection" may be an electrical connection or a magnetic connection. In this embodiment, one end of the feeder line 70 is configured to be electrically connected to the sixth conductor 52 of the third conductor 50. The other end of the feed line 70 may be configured to be electrically connected to an RF (Radio Frequency) module or the like of a device including the antenna 1. A portion of the power supply line 70 may be located on the upper surface of the base body 20.

給電線７０は、アンテナ１によって電磁波を放射する場合、アンテナ１を備える機器のＲＦモジュール等からの電力を、第３導体５０に供給するように、構成されている。給電線７０は、アンテナ１によって電磁波を受信する場合、第３導体５０からの電力を、ＲＦモジュール等に供給するように、構成されている。 The feed line 70 is configured to supply power from an RF module or the like of a device including the antenna 1 to the third conductor 50 when the antenna 1 radiates electromagnetic waves. The feeder line 70 is configured to supply power from the third conductor 50 to an RF module or the like when the antenna 1 receives electromagnetic waves.

共振構造体１０が所定周波数で共振するとき、第１導体３０、第２導体４０、第３導体５０及び第４導体６０をループ状に流れるループ電流が生じ得る。当該ループ電流からは、第１導体３０がＸ軸負方向側にてＹＺ平面に広がる電気壁として観え、第２導体４０がＸ軸正方向側にてＹＺ平面に広がる電気壁として観える。また、当該ループ電流から観て、Ｙ軸正方向側及びＹ軸負方向側には、導体等が位置していない。つまり当該ループ電流から観て、Ｙ軸正方向側及びＹ軸負方向側は、電気的に開放されている。Ｙ軸正方向側及びＹ軸負方向側が電気的に開放されていることにより、当該ループ電流からは、Ｙ軸正方向側のＸＺ平面と、Ｙ軸負方向側のＸＹ平面とは、磁気壁として観える。当該ループ電流がこれら２つの電気壁及び２つの磁気壁によって囲まれることにより、アンテナ１は、Ｚ軸正方向側から共振構造体１０の上面に入射する所定周波数の電磁波に対して、人工磁気壁特性を示す。 When the resonant structure 10 resonates at a predetermined frequency, a loop current may be generated that flows in a loop through the first conductor 30, second conductor 40, third conductor 50, and fourth conductor 60. From the loop current, the first conductor 30 can be seen as an electric wall extending in the YZ plane on the negative side of the X-axis, and the second conductor 40 can be seen as an electric wall spreading in the YZ plane on the positive side of the X-axis. Further, when viewed from the loop current, no conductor or the like is located on the Y-axis positive direction side or the Y-axis negative direction side. In other words, when viewed from the loop current, the Y-axis positive direction side and the Y-axis negative direction side are electrically open. Since the Y-axis positive direction side and the Y-axis negative direction side are electrically open, the loop current can be seen from the XZ plane on the Y-axis positive direction side and the XY plane on the Y-axis negative direction side due to the magnetic wall. It can be seen as Since the loop current is surrounded by these two electric walls and two magnetic walls, the antenna 1 is able to prevent electromagnetic waves of a predetermined frequency from entering the top surface of the resonant structure 10 from the positive Z-axis side by using the artificial magnetic wall. Show characteristics.

図３は、本開示の一実施形態に係る共振構造体１０の製造方法の製造工程を示すフローチャートである。 FIG. 3 is a flowchart showing a manufacturing process of a method for manufacturing the resonant structure 10 according to an embodiment of the present disclosure.

準備工程Ｓ１０では、例えば図４及び図５に示すような積層基板１００（基板）から、図６に示すような矩形基板２００が準備される。 In the preparation step S10, a rectangular substrate 200 as shown in FIG. 6 is prepared from the laminated substrate 100 (substrate) as shown in FIGS. 4 and 5, for example.

図４に示すように、積層基板１００には、複数のユニット１１０がＸ方向及びＹ方向に沿って格子状に並ぶ。ユニット１１０は、共振構造体１０に対応する。図５に示すように、積層基板１００は、第１層１０１と、第２層１０２と、第３層１０３と、第４層１０４と、第５層１０５とが積層されている。積層基板１００は、第１層１０１～第５層１０５を貼り合わせることにより、形成されてよい。積層基板１００は、フレキシブル配線基板（ＦＰＣ：Flexible Printed Circuit）として形成されてよい。 As shown in FIG. 4, a plurality of units 110 are arranged in a grid pattern along the X direction and the Y direction on the laminated substrate 100. Unit 110 corresponds to resonant structure 10 . As shown in FIG. 5, the multilayer substrate 100 includes a first layer 101, a second layer 102, a third layer 103, a fourth layer 104, and a fifth layer 105. The laminated substrate 100 may be formed by bonding the first layer 101 to the fifth layer 105. The laminated substrate 100 may be formed as a flexible printed circuit (FPC).

第１層１０１は、第４導体６０に対応する導体層１６０を含む。第２層１０２は、基体２０の一部に対応する誘電体層１２０を含む。第３層１０３は、内導体５３に対応する導体層１５３と、接続部５６に対応する導体層１５６と、接続部５７に対応する導体層１５７と、基体２０の一部に対応する誘電体層１２０を含む。第４層１０４は、基体２０の一部に対応する誘電体層１２０を含む。第５層１０５は、第５導体５１及び接続部５４に対応する導体層１５１と、第６導体５２及び接続部５５に対応する導体層１５２とを含む。給電線７０が配線層として形成される場合、第５層１０５は、給電線７０に対応する配線層を含んでよい。給電線７０は、共振構造体１０が形成された後に、別途形成されてよい。 The first layer 101 includes a conductor layer 160 corresponding to the fourth conductor 60. Second layer 102 includes a dielectric layer 120 that corresponds to a portion of base 20 . The third layer 103 includes a conductor layer 153 corresponding to the inner conductor 53, a conductor layer 156 corresponding to the connecting portion 56, a conductive layer 157 corresponding to the connecting portion 57, and a dielectric layer corresponding to a part of the base 20. 120 included. Fourth layer 104 includes a dielectric layer 120 corresponding to a portion of base 20 . The fifth layer 105 includes a conductor layer 151 corresponding to the fifth conductor 51 and the connection part 54 and a conductor layer 152 corresponding to the sixth conductor 52 and the connection part 55. When the power supply line 70 is formed as a wiring layer, the fifth layer 105 may include a wiring layer corresponding to the power supply line 70. The feed line 70 may be formed separately after the resonant structure 10 is formed.

積層基板１００には、第１接続導体３１に対応する位置に、第１貫通孔１３１が形成されてよい。積層基板１００には、第２接続導体４１に対応する位置に、第２貫通孔１４１が形成されてよい。 A first through hole 131 may be formed in the laminated substrate 100 at a position corresponding to the first connection conductor 31 . A second through hole 141 may be formed in the laminated substrate 100 at a position corresponding to the second connection conductor 41.

積層基板１００は、領域１００ａ，１００ｂ，１００ｃ，１００ｄを含んでよい。領域１００ａ～１００ｄには、ユニット１１０が並べられなくてよい。領域１００ａ～１００ｄには、積層基板１００を切断する際に用いられるアライメント用のマークが付されていてよい。領域１００ａは、積層基板１００のＸ軸負方向側の端部に位置する。領域１００ｂは、積層基板１００のＸ軸正方向側の端部に位置する。領域１００ａ，１００ｂは、Ｙ方向に沿う。領域１００ｃは、積層基板１００のＹ軸負方向側の端部である。領域１００ｄは、積層基板１００のＹ軸正方向側の端部である。領域１００ｃ，１００ｄは、Ｘ方向に沿う。 Laminated substrate 100 may include regions 100a, 100b, 100c, and 100d. The units 110 do not need to be arranged in the regions 100a to 100d. The regions 100a to 100d may have alignment marks used when cutting the laminated substrate 100. The region 100a is located at the end of the multilayer substrate 100 on the negative side of the X-axis. The region 100b is located at the end of the multilayer substrate 100 on the positive side of the X-axis. Regions 100a and 100b extend along the Y direction. The region 100c is the end of the multilayer substrate 100 on the Y-axis negative direction side. The region 100d is the end of the multilayer substrate 100 on the Y-axis positive direction side. Regions 100c and 100d are along the X direction.

積層基板１００は、線１０６，１０７，１０８を含む。線１０６は、Ｘ方向において隣り合うユニット１１０を区画する線である。線１０６は、Ｙ方向に沿う。線１０７は、隣り合う領域１００ａと、Ｘ方向において領域１００ａと隣り合うユニット１１０とを区画する線である。線１０７は、Ｙ方向に沿う。線１０８は、領域１００ｂと、Ｘ方向において領域１００ｂと隣り合うユニット１１０とを区画する線である。線１０８は、Ｙ方向に沿う。線１０６，１０７，１０８の幅は、後述の積層基板１００を切断する際の切り代を考慮した幅であってよい。 Laminated substrate 100 includes lines 106, 107, and 108. Line 106 is a line that separates adjacent units 110 in the X direction. Line 106 runs along the Y direction. The line 107 is a line that separates the adjacent region 100a and the unit 110 adjacent to the region 100a in the X direction. Line 107 is along the Y direction. The line 108 is a line that separates the region 100b and the unit 110 adjacent to the region 100b in the X direction. Line 108 runs along the Y direction. The widths of the lines 106, 107, and 108 may be widths that take into consideration cutting margins when cutting the laminated substrate 100, which will be described later.

準備工程Ｓ１０では、Ｙ方向に沿って、例えば線１０６，１０７，１０８に沿って、積層基板１００を切断することにより、図６に示すような矩形基板２００が準備されてよい。例えば、準備工程Ｓ１０では、領域１００ａ～１００ｄに付されているマークを基準にして、積層基板１００が切断されてよい。積層基板１００の切断には、型抜き及び／又はレーザカットにより、実施されてよい。ただし、準備工程Ｓ１０において、矩形基板２００を準備する方法は、積層基板１００を切断することに限定されない。第１層１０１と、第２層１０２と、第３層１０３と、第４層１０４と、第５層１０５とが積層されている矩形基板２００が準備できれば、任意の方法で、矩形基板２００は、準備されてよい。 In the preparation step S10, a rectangular substrate 200 as shown in FIG. 6 may be prepared by cutting the laminated substrate 100 along the Y direction, for example, along lines 106, 107, and 108. For example, in the preparation step S10, the laminated substrate 100 may be cut based on the marks attached to the regions 100a to 100d. The laminated substrate 100 may be cut by die cutting and/or laser cutting. However, in the preparation step S10, the method for preparing the rectangular substrate 200 is not limited to cutting the laminated substrate 100. If the rectangular substrate 200 in which the first layer 101, the second layer 102, the third layer 103, the fourth layer 104, and the fifth layer 105 are stacked is prepared, the rectangular substrate 200 can be prepared by any method. , may be prepared.

矩形基板２００には、複数のユニット１１０がＹ方向に沿って並ぶ。矩形基板２００には、複数のユニット１１０がＹ方向に沿って接続されている。矩形基板２００は、領域２００ｃと、領域２００ｄとを含む。領域２００ｃは、積層基板１００の領域１００ｃの一部である。領域２００ｄは、積層基板１００の領域１００ｄの一部である。領域２００ａ，２００ｄには、矩形基板２００を切断する際に用いられるアライメント用のマークが付されていてよい。 A plurality of units 110 are arranged on the rectangular substrate 200 along the Y direction. A plurality of units 110 are connected to the rectangular substrate 200 along the Y direction. Rectangular substrate 200 includes a region 200c and a region 200d. The region 200c is a part of the region 100c of the multilayer substrate 100. The region 200d is a part of the region 100d of the multilayer substrate 100. Alignment marks used when cutting the rectangular substrate 200 may be attached to the regions 200a and 200d.

形成工程Ｓ１１では、溶融めっき法により、矩形基板２００のＸ方向における２つの端部に、図７に示すような、第１導体３０に対応する導体２３０と、第２導体４０に対応する導体２４０が形成される。図７及び後述の図８においては、説明の便宜上、導体２３０及び導体２４０にドットが施されている。溶融めっき法において、図６に示すような、第１領域２０１及び第２領域２０２の各々が溶融金属中に浸漬されてよい。 In the formation step S11, a conductor 230 corresponding to the first conductor 30 and a conductor 240 corresponding to the second conductor 40 are formed on two ends of the rectangular substrate 200 in the X direction by hot dipping, as shown in FIG. is formed. In FIG. 7 and FIG. 8, which will be described later, for convenience of explanation, the conductor 230 and the conductor 240 are dotted. In the hot-dip plating method, each of the first region 201 and the second region 202 may be immersed in molten metal, as shown in FIG. 6 .

第１領域２０１は、矩形基板２００のＸ軸負方向側の領域である。第１領域２０１は、第１導体３０に対応する領域を含む。第１領域２０１は、領域２００ｃ，２００ｄのＸ軸負方向側の端部を含む。第１領域２０１内には、第１貫通孔１３１が位置する。第１領域２０１は、図１に示すような第５導体５１の端部５１ｂから離れるように、設定されてよい。第１領域２０１のＸ方向における長さＢは、図１を参照した上述したような長さＡよりも、短くてよい。 The first region 201 is a region of the rectangular substrate 200 on the negative side of the X-axis. The first region 201 includes a region corresponding to the first conductor 30. The first region 201 includes the ends of the regions 200c and 200d on the X-axis negative direction side. A first through hole 131 is located within the first region 201 . The first region 201 may be set away from the end 51b of the fifth conductor 51 as shown in FIG. The length B of the first region 201 in the X direction may be shorter than the length A as described above with reference to FIG.

第２領域２０２は、矩形基板２００のＸ軸正方向側の領域である。第２領域２０２は、第２導体４０に対応する領域を含む。第２領域２０２は、領域２００ｃ，２００ｄのＸ軸正方向側の端部を含む。第２領域２０２内には、第２貫通孔１４１が位置する。第２領域２０２は、図１に示すような第６導体５２の端部５２ｂから離れるように、設定されてよい。第２領域２０２のＸ方向における長さＣは、第１領域２０１のＸ方向における長さＢと同じであってよいし、異なってよい。長さＣは、図１を参照した上述したような長さＡよりも、短くてよい。 The second region 202 is a region on the positive side of the X-axis of the rectangular substrate 200. The second region 202 includes a region corresponding to the second conductor 40. The second region 202 includes the ends of the regions 200c and 200d on the X-axis positive direction side. A second through hole 141 is located within the second region 202 . The second region 202 may be set away from the end 52b of the sixth conductor 52 as shown in FIG. The length C of the second region 202 in the X direction may be the same as or different from the length B of the first region 201 in the X direction. Length C may be shorter than length A as described above with reference to FIG.

第１領域２０１が溶融金属中に浸漬されることにより、第１領域２０１の表面には溶融金属が付着し得る。第１領域２０１が溶融金属中に浸漬されることにより、第１領域２０１内に位置する第１貫通孔１３１に、溶融金属が充填され得る。第１領域２０１の表面に付着した溶融金属及び第１貫通孔１３１に充填された溶融金属は、硬化される。当該溶融金属が硬化されることにより、導体２３０が形成され得る。 By immersing the first region 201 in the molten metal, the molten metal can adhere to the surface of the first region 201. By immersing the first region 201 in the molten metal, the first through hole 131 located within the first region 201 can be filled with the molten metal. The molten metal adhering to the surface of the first region 201 and the molten metal filling the first through hole 131 are hardened. The conductor 230 can be formed by hardening the molten metal.

第２領域２０２が溶融金属中に浸漬されることにより、第２領域２０２の表面には、溶融金属が付着し得る。第２領域２０２が溶融金属中に浸漬されることにより、第２領域２０２内に位置する第２貫通孔１４１に、溶融金属が充填され得る。第２領域２０２の表面に付着した溶融金属及び第２貫通孔１４１に充填された溶融金属は、硬化される。当該溶融金属が硬化されることにより、導体２４０が形成され得る。 By immersing the second region 202 in the molten metal, the molten metal can adhere to the surface of the second region 202. By immersing the second region 202 in the molten metal, the second through hole 141 located within the second region 202 can be filled with the molten metal. The molten metal adhering to the surface of the second region 202 and the molten metal filling the second through hole 141 are hardened. The conductor 240 can be formed by hardening the molten metal.

溶融金属中に第１領域２０１を浸漬させることにより、第１領域２０１の表面に溶融金属を付着させる際、第１領域２０１を超えてユニット１１０のＸ軸正方向側にも、溶融金属が付着する場合がある。第１領域２０１と類似に、第２領域２０２の表面に溶融金属を付着させる際、第２領域２０２を超えてユニット１１０のＸ軸負方向側にも、溶融金属が付着する場合がある。 By immersing the first region 201 in the molten metal, when the molten metal is attached to the surface of the first region 201, the molten metal is also attached to the X-axis positive direction side of the unit 110 beyond the first region 201. There are cases where Similar to the first region 201, when molten metal is attached to the surface of the second region 202, the molten metal may also be attached to the negative side of the X-axis of the unit 110 beyond the second region 202.

ここで、図１を参照して上述したように、アンテナ１の動作周波数は、第５導体５１及び第６導体５２の構造に応じて、変化し得る。上述のように、第１領域２０１は、図１に示すような第５導体５１の端部５１ｂから離れるように設定されてよい。第５導体５１の端部５１ｂが第１領域２０１から離れていることにより、第１領域２０１を超えてユニット１１０のＸ軸正方向側に溶融金属が付着しても、当該溶融金属が第５導体５１にまで付着する可能性が低減され得る。上述のように、第２領域２０２は、図１に示すような第６導体５２の端部５２ｂから離れるように、設定されてよい。第６導体５２の端部５２ｂが第２領域２０２から離れていることにより、第２領域２０２を超えてユニット１１０のＸ軸負方向側に溶融金属が付着しても、当該溶融金属が第６導体５２にまで付着する可能性が低減され得る。第５導体５１及び第６導体５２に溶融金属が付着する可能性が低減することにより、第５導体５１及び第６導体５２の構造が設計値から変化する可能性が低減され得る。第５導体５１及び第６導体５２の構造が設計値から変化する可能性が低減されることにより、アンテナ１の動作周波数が設計値からずれる可能性が低減され得る。 Here, as described above with reference to FIG. 1, the operating frequency of the antenna 1 may vary depending on the structures of the fifth conductor 51 and the sixth conductor 52. As described above, the first region 201 may be set away from the end 51b of the fifth conductor 51 as shown in FIG. Since the end portion 51b of the fifth conductor 51 is separated from the first region 201, even if molten metal exceeds the first region 201 and adheres to the X-axis positive direction side of the unit 110, the molten metal is The possibility of adhesion to the conductor 51 can be reduced. As described above, the second region 202 may be set away from the end 52b of the sixth conductor 52 as shown in FIG. Since the end portion 52b of the sixth conductor 52 is separated from the second region 202, even if molten metal exceeds the second region 202 and adheres to the negative side of the X-axis of the unit 110, the molten metal is The possibility of adhesion to the conductor 52 can be reduced. By reducing the possibility that molten metal will adhere to the fifth conductor 51 and the sixth conductor 52, the possibility that the structures of the fifth conductor 51 and the sixth conductor 52 will change from their designed values can be reduced. By reducing the possibility that the structures of the fifth conductor 51 and the sixth conductor 52 will change from the design values, the possibility that the operating frequency of the antenna 1 will deviate from the design values can be reduced.

図１を参照して上述したように、第５導体５１の端部５１ｂから第６導体５２の端部５２ｂまでの長さＡは、第１領域２０１のＸ方向における長さＢ、及び、第２領域２０２のＸ方向における長さＣよりも、長くてよい。長さＡが長いことにより、第５導体５１及び第６導体５２に溶融金属が付着しても、第５導体５１及び第６導体６２のＸ方向における長さの設計値からの変化が低減され得る。第５導体５１及び第６導体６２のＸ方向における長さの設計値からの変化が低減されることにより、アンテナ１の動作周波数の設計値からのずれ量が低減され得る。 As described above with reference to FIG. 1, the length A from the end 51b of the fifth conductor 51 to the end 52b of the sixth conductor 52 is equal to the length B of the first region 201 in the It may be longer than the length C of the second region 202 in the X direction. Because the length A is long, even if molten metal adheres to the fifth conductor 51 and the sixth conductor 52, changes in the lengths of the fifth conductor 51 and the sixth conductor 62 in the X direction from the designed values are reduced. obtain. By reducing the change in the length of the fifth conductor 51 and the sixth conductor 62 in the X direction from the designed value, the amount of deviation of the operating frequency of the antenna 1 from the designed value can be reduced.

切断工程Ｓ１２では、図７に示すような導体２３０及び導体２４０が形成された矩形基板３００が、Ｘ方向に沿って、例えば線３０１，３０２，３０３に沿って、切断される。例えば、切断工程Ｓ１２では、領域２００ａ，２００ｄに付されているマークを基準にして、矩形基板３００が切断されてよい。矩形基板３００の切断は、型抜き及び／又はレーザカットにより、実施されてよい。線３０１は、Ｙ方向において隣り合うユニット１１０を区画する線である。線３０１は、Ｘ方向に沿う。線３０２は、領域２００ｃと、Ｙ方向において領域２００ｃと隣り合うユニット１１０とを区画する線である。線３０２は、Ｘ方向に沿う。線３０３は、領域２００ｄと、Ｙ方向において領域２００ｄと隣り合うユニット１１０とを区画する線である。線３０３は、Ｘ方向に沿う。線３０１，３０２，３０３の幅は、矩形基板３００を切断する際の切り代を考慮した幅であってよい。 In the cutting step S12, the rectangular substrate 300 on which the conductor 230 and the conductor 240 as shown in FIG. 7 are formed is cut along the X direction, for example, along lines 301, 302, and 303. For example, in the cutting step S12, the rectangular substrate 300 may be cut using marks attached to the regions 200a and 200d as references. The rectangular substrate 300 may be cut by die cutting and/or laser cutting. Line 301 is a line that separates adjacent units 110 in the Y direction. Line 301 is along the X direction. The line 302 is a line that separates the region 200c and the units 110 adjacent to the region 200c in the Y direction. Line 302 is along the X direction. The line 303 is a line that separates the region 200d and the unit 110 adjacent to the region 200d in the Y direction. Line 303 is along the X direction. The widths of the lines 301, 302, and 303 may be set in consideration of the cutting margin when cutting the rectangular substrate 300.

形成工程Ｓ１１で導体２３０及び導体２４０を形成した後に、切断工程Ｓ１２が実行されることにより、共振構造体１０のＹ軸正方向側の面及びＹ軸負方向側の面に、金属が付着することが低減され得る。共振構造体１０のＹ軸正方向側の面及びＹ軸負方向側の面に金属が付着することが低減されることにより、共振構造体１０のＹ軸正方向側のＸＺ平面と、Ｙ軸負方向側のＸＹ平面とは、磁気壁としてより機能し得る。 After the conductor 230 and the conductor 240 are formed in the formation step S11, the cutting step S12 is performed, so that metal is attached to the surface of the resonant structure 10 on the Y-axis positive direction side and the surface on the Y-axis negative direction side. can be reduced. By reducing metal adhesion to the surface of the resonant structure 10 on the Y-axis positive direction side and the surface on the Y-axis negative direction side, the XZ plane on the Y-axis positive direction side of the resonant structure 10 and the Y-axis The XY plane on the negative side can function more as a magnetic wall.

このように本実施形態によれば、新たな共振構造体１０の製造方法が提供され得る。 As described above, according to the present embodiment, a new method for manufacturing the resonant structure 10 can be provided.

本開示に係る構成は、以上説明してきた実施形態にのみ限定されるものではなく、幾多の変形又は変更が可能である。例えば、各構成部等に含まれる機能等は論理的に矛盾しないように再配置可能であり、複数の構成部等を１つに組み合わせたり、或いは、分割したりすることが可能である。 The configuration according to the present disclosure is not limited to the embodiments described above, and can be modified or changed in many ways. For example, functions included in each component can be rearranged so as not to be logically inconsistent, and a plurality of components can be combined into one or divided.

本開示に係る構成を説明する図は、模式的なものである。図面上の寸法比率等は、現実のものと必ずしも一致しない。 The diagrams illustrating the configuration according to the present disclosure are schematic diagrams. The dimensional ratios, etc. on the drawings do not necessarily match the reality.

本開示において「第１」、「第２」、「第３」等の記載は、当該構成を区別するための識別子の一例である。本開示における「第１」及び「第２」等の記載で区別された構成は、当該構成における番号を交換することができる。例えば、第１導体は、第２導体と識別子である「第１」と「第２」とを交換することができる。識別子の交換は同時に行われる。識別子の交換後も当該構成は区別される。識別子は削除してよい。識別子を削除した構成は、符号で区別される。本開示における「第１」及び「第２」等の識別子の記載のみに基づいて、当該構成の順序の解釈、小さい番号の識別子が存在することの根拠、及び、大きい番号の識別子が存在することの根拠に利用してはならない。 In this disclosure, descriptions such as "first," "second," and "third" are examples of identifiers for distinguishing the configurations. For configurations that are distinguished by descriptions such as “first” and “second” in the present disclosure, the numbers in the configurations can be exchanged. For example, the first conductor can exchange the identifiers "first" and "second" with the second conductor. The exchange of identifiers takes place simultaneously. Even after exchanging identifiers, the configurations are distinguished. Identifiers may be removed. Configurations with removed identifiers are distinguished by codes. Based only on the description of identifiers such as "first" and "second" in this disclosure, there is an interpretation of the order of the configuration, the basis for the existence of lower numbered identifiers, and the existence of higher numbered identifiers. shall not be used as a basis for

１アンテナ
１０共振構造体
２０基体
３０第１導体
３１第１接続導体
３２接続部
３３，３４，３５部分
４０第２導体
４１第２接続導体
４２接続部
４３，４４，４５部分
５０第３導体
５１第５導体
５１ａ，５１ｂ端部
５２第６導体
５２ａ，５２ｂ端部
５３導体
５４，５５，５６，５７接続部
６０第４導体
７０給電線
１００積層基板（基板）
１００ａ，１００ｂ，１００ｃ，１００ｄ領域
１０１第１層
１０２第２層
１０３第３層
１０４第４層
１０５第５層
１０６，１０７，１０８，線
１１０ユニット
１２０誘電体層
１３１第１貫通孔
１４１第２貫通孔
１５１，１５２，１５３，１５６，１５７，１６０，導体層
２００矩形基板
２００ｃ，２００ｄ領域
２０１第１領域
２０２第２領域
２３０，２４０導体
３００矩形基板
３０１，３０２，３０３線 1 antenna 10 resonance structure 20 base 30 first conductor 31 first connection conductor 32 connection part 33, 34, 35 part 40 second conductor 41 second connection conductor 42 connection part 43, 44, 45 part 50 third conductor 51 th 5 conductors 51a, 51b end portions 52 6th conductor 52a, 52b end portions 53 conductors 54, 55, 56, 57 connection portions 60 4th conductor 70 power supply line 100 laminated board (substrate)
100a, 100b, 100c, 100d Region 101 First layer 102 Second layer 103 Third layer 104 Fourth layer 105 Fifth layer 106, 107, 108, Wire 110 Unit 120 Dielectric layer 131 First through hole 141 Second through hole Holes 151, 152, 153, 156, 157, 160, Conductor layer 200 Rectangular substrate 200c, 200d Area 201 First area 202 Second area 230, 240 Conductor 300 Rectangular substrate 301, 302, 303 Line

Claims

A method for manufacturing a resonant structure, the method comprising:
The resonant structure is
a first conductor;
a second conductor facing the first conductor in a first direction;
a third conductor that extends along the first direction, is located between the first conductor and the second conductor, and is configured to capacitively connect the first conductor and the second conductor; and,
a fourth conductor extending along the first direction and electrically connected to the first conductor and the second conductor;
The method for manufacturing the resonant structure includes:
preparing a rectangular substrate in which a plurality of units corresponding to the resonant structure are lined up in a second direction intersecting the first direction;
forming a conductor corresponding to the first conductor and a conductor corresponding to the second conductor at two ends of the rectangular substrate in the first direction by a hot-dip plating method;
A method for manufacturing a resonant structure, comprising: cutting the plurality of units adjacent to each other in the second direction in the rectangular substrate along the first direction.

A method for manufacturing a resonant structure according to claim 1, comprising:
The first conductor extends along a third direction that intersects the first plane including the first direction and the second direction, and electrically connects the third conductor and the fourth conductor. including a plurality of first connection conductors;
The second conductor includes one or more second connection conductors that extend along the third direction and electrically connect the third conductor and the fourth conductor,
Preparing the rectangular substrate includes:
forming one or more first through holes in the unit at positions corresponding to the one or more first connection conductors, and
forming one or more second through holes at positions corresponding to the one or more second connection conductors of the unit,
Forming the conductor includes forming the one or more first connection conductors in the one or more first through-holes by the hot-dip plating method, and forming the one or more first connection conductors in the one or more second through-holes. A method of manufacturing a resonant structure, comprising forming the one or more second connection conductors.

A method for manufacturing a resonant structure according to claim 2, comprising:
The one or more first connection conductors are a plurality of first connection conductors lined up in the second direction,
The one or more second connection conductors are a plurality of second connection conductors lined up in the second direction,
The third conductor includes a fifth conductor and a sixth conductor facing each other in the first direction,
The width of the fifth conductor in the second direction is narrower than the distance between both ends of the plurality of first connection conductors in the second direction,
The width of the sixth conductor in the second direction is narrower than the distance between both ends of the plurality of second connection conductors in the second direction.

A method for manufacturing a resonant structure according to claim 3, comprising:
Forming the conductor includes immersing a first region corresponding to the position of the first conductor and a second region corresponding to the position of the second conductor in molten metal,
The first region is set to include an end of the fifth conductor on the first conductor side,
The method for manufacturing a resonant structure, wherein the second region is set to include an end of the sixth conductor on the second conductor side.

A method for manufacturing a resonant structure according to claim 4, comprising:
The length from the end of the fifth conductor on the first conductor side to the end of the sixth conductor on the second conductor side is the length of the first region in the first direction, and A method for manufacturing a resonant structure having a length longer than each of the two regions in the first direction.

A method for manufacturing a resonant structure according to any one of claims 1 to 5, comprising:
Preparing the rectangular substrate includes:
preparing a board on which the plurality of units are connected along the first direction;
A method for manufacturing a resonant structure, comprising: preparing the rectangular substrate by cutting the substrate along the second direction.

A method for manufacturing a resonant structure according to any one of claims 1 to 6, comprising:
In the method for manufacturing a resonant structure, in the rectangular substrate, a conductor layer corresponding to the third conductor and a conductor layer corresponding to the fourth conductor are laminated with a dielectric layer interposed therebetween.