JPH05148651A - Plated metallic material low in microwave damping factor and its manufacture - Google Patents

Plated metallic material low in microwave damping factor and its manufacture

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Publication number
JPH05148651A
JPH05148651A JP33433091A JP33433091A JPH05148651A JP H05148651 A JPH05148651 A JP H05148651A JP 33433091 A JP33433091 A JP 33433091A JP 33433091 A JP33433091 A JP 33433091A JP H05148651 A JPH05148651 A JP H05148651A
Authority
JP
Japan
Prior art keywords
plating
pure
plated
layer
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP33433091A
Other languages
Japanese (ja)
Inventor
Hirohiko Sakai
裕彦 堺
Masatoshi Iwai
正敏 岩井
Koji Irie
広司 入江
Touta Ayabe
東太 綾部
Shoji Miyake
昭二 三宅
Akiyoshi Itasaka
昭美 板坂
Jiyunji Kawafuku
純司 川福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP33433091A priority Critical patent/JPH05148651A/en
Publication of JPH05148651A publication Critical patent/JPH05148651A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE:To provide a plated metallic material low in a microwave damping factor and useful as the part material having such required properties as being less in microwave damping and being capable of securing high energy utilizing efficiency to a microwave such as the waveguide and inner compartment of a microwave oven, and its manufacturing method. CONSTITUTION:The objective plated metallic material low in a microwave damping factor is constituted in such a manner that a pure Al plated layer having >=1.0mum thickness is formed on the topmost surface layer, preferably, its surface roughness is limited to Ra<=1.0mum and the levelling rate on the surface of the plated layer is increased to >=50%. This plated metallic material is obtd. by applying pure Al plating to a belt-like metallic material by an evaporation plating method and thereafter executing skin pass rolling.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、たとえば電子レンジの
導波管や内箱の如く、マグネトロンからのマイクロ波照
射に対して高いエネルギー利用効率が要求される部品用
材料として好適な素材、即ちマイクロ波減衰率の小さい
めっき金属材及びその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is suitable as a material for parts, such as a waveguide of a microwave oven or an inner box, which requires high energy utilization efficiency against microwave irradiation from a magnetron, that is, The present invention relates to a plated metal material having a small microwave attenuation factor and a method for manufacturing the same.

【0002】[0002]

【従来の技術】マイクロ波を伝達し、あるいは封じ込め
る目的で使用される部品としては、従来よりステンレス
鋼板やZnめっき鋼板を折り曲げ加工し、塗装したもの
が使用されてきた。
2. Description of the Related Art As a component used for transmitting or containing microwaves, a stainless steel plate or a Zn-plated steel plate which has been bent and coated has been used.

【0003】この様な部品材料としては、本来マイクロ
波減衰性の観点からすると電気伝導率が高く強磁性体で
ないCuやAl等が最も適しているはずであるが、Cu
は緑青の如き毒性の強い腐食生成物が生成するため、塗
装して使用するとはいえ、食品と接する可能性がある電
子レンジの内箱等としては使用し難く、またコストも鋼
板やステンレス鋼板に比べてはるかに高くつくため使用
されていない。また、Alも鋼板等に比べてコストが高
く、且つ加工性や耐熱性が悪いため殆ど使用されていな
い。
From the viewpoint of microwave attenuating property, Cu, Al, etc., which have high electric conductivity and are not a ferromagnetic material, should be most suitable as such a component material.
Since it produces a highly toxic corrosion product such as patina, it can be used by painting, but it is difficult to use as an inner box of a microwave oven that may come into contact with food. Not used because it is much more expensive than it is. Al is also rarely used because its cost is higher than that of a steel plate and the workability and heat resistance are poor.

【0004】マイクロ波の理論によれば、マイクロ波の
減衰に関与するのは表皮厚み(SkinDepth)といわれる
数μmの金属最表層のみであり、マイクロ波はこの層内
に侵入して電流が流れ、マイクロ波のエネルギーが消費
される。したがって、金属素地上に数μmのCuめっ
き、あるいはAlめっきを施しておけば、そのマイクロ
波減衰性はCu地金やAl地金を用いて作ったものと同
等になるはずである。しかしCuめっきでは、前述の如
く毒性の問題が生じるばかりでなく、端面や加工部とい
った銅めっき層に覆われていない所ではマイクロ波減衰
の防止効果が発揮されず、また素地の腐食も防止できな
い。
According to the theory of microwaves, it is only the outermost metal layer of several μm called the skin depth (SkinDepth) that is involved in the attenuation of microwaves, and the microwaves penetrate into this layer and the current flows. , Microwave energy is consumed. Therefore, if a metal substrate is plated with Cu or Al with a thickness of several μm, its microwave attenuation property should be the same as that produced by using Cu or Al. However, Cu plating not only causes the toxicity problem as described above, but also does not exert the effect of preventing microwave attenuation in a place not covered with the copper plating layer such as the end face and the processed portion, and also cannot prevent the corrosion of the base material. ..

【0005】また、Alめっきとして従来から行われて
いる溶融Alめっき法では、鋼板とめっき層との界面に
脆弱なFe−Al合金層が発達するのを防止するため、
めっき中に数%のSiを含有させることがあり、そのた
め純Alめっきに比べて電気伝導率が悪く、マイクロ波
減衰率は純Alに比べて大きい。一方Siを含有しない
溶融Alめっきでは、曲げ加工や絞り加工を行う際にめ
っき剥離が起こるので、めっきしてから導波管や内箱に
加工するといった方法は採用できない。
Further, in the conventional hot dip Al plating method for Al plating, in order to prevent the fragile Fe--Al alloy layer from developing at the interface between the steel sheet and the plating layer,
The plating may contain a few% of Si, so that the electric conductivity is lower than that of pure Al plating, and the microwave attenuation rate is higher than that of pure Al. On the other hand, in hot-dip Al plating that does not contain Si, plating peeling occurs during bending and drawing, and therefore a method of plating and then processing into a waveguide or an inner box cannot be adopted.

【0006】このため、低コストで耐食性や耐熱性に優
れたZn系めっき鋼板やステンレス鋼板が使用されてき
た訳であるが、これらは電気伝導性がCuやAlほど良
好ではなく、しかも鋼板やフェライト系ステンレス鋼板
は強磁性であるため、CuやAlに比べてマイクロ波の
減衰が著しくなる。
For this reason, Zn-based plated steel sheets and stainless steel sheets, which are low in cost and excellent in corrosion resistance and heat resistance, have been used. However, they are not as good in electric conductivity as Cu and Al, and the steel sheets and Since the ferritic stainless steel sheet is ferromagnetic, the attenuation of microwave becomes more significant than that of Cu or Al.

【0007】[0007]

【発明が解決しようとする課題】本発明は上記の様な事
情に着目してなされたものであって、その目的は、電子
レンジの導波管や内箱等の部品材料としての要求特性、
即ちマイクロ波減衰率が小さく、また食品衛生上問題を
生じることがなく、且つ優れた耐食性、加工性を備え、
しかも低コストで得ることのできるめっき材およびその
製造方法を提供しようとするものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and its purpose is to obtain required characteristics as a component material such as a waveguide and an inner box of a microwave oven,
That is, the microwave attenuation factor is small, there is no problem in food hygiene, and excellent corrosion resistance and workability are provided.
Moreover, it is an object of the present invention to provide a plated material that can be obtained at low cost and a method for manufacturing the same.

【0008】[0008]

【課題を解決するための手段】上記課題を解決すること
のできた本発明に係るマイクロ波減衰率の小さいめっき
金属材の構成は、最表層部に厚さ1.0μm以上の純A
lめっき層を形成してなるところに要旨を有するもので
あり、このめっき層は表面粗さがRa ≦1.0μm(た
だしRa はJIS B0601に規定する中心線平均粗
さ:以下同じ)であるものが特に好ましく、また素材と
しては鋼板あるいはステンレス鋼板が最も一般的であ
る。
The structure of the plated metal material having a small microwave attenuation rate according to the present invention, which has been capable of solving the above problems, has a pure A having a thickness of 1.0 μm or more in the outermost layer.
The surface roughness of this plating layer is Ra ≤ 1.0 μm (where Ra is the center line average roughness specified in JIS B0601: the same applies hereinafter). Is particularly preferable, and a steel plate or a stainless steel plate is the most common material.

【0009】また本発明にかかる製造方法は、帯状金属
基材に対し蒸着めっき法によって純Alを1.0μm以
上めっきし、次いでスキンパス圧延することを要旨とす
るものであり、それによって表面が50%以上平滑化さ
れ、かつその表面粗さがRa≦1.0μmである様な上
記めっき金属材が得られる。
Further, the manufacturing method according to the present invention is characterized in that a strip-shaped metal base material is plated with pure Al to a thickness of 1.0 μm or more by a vapor deposition plating method, and then skin-pass rolling is performed, whereby the surface of the belt is 50. % Or more, and the above-mentioned plated metal material having a surface roughness Ra ≦ 1.0 μm is obtained.

【0010】[0010]

【作用】まず、その最表層を純Alめっきに定めた理由
を説明する。これは、Alが実用金属の中ではCuに
次いでマイクロ波減衰率が小さいこと、Cuのように
イオン化しても毒性がなく食品に接する可能性のある電
子レンジにも安心して使用できること、またZnには
及ばないもののFeに対し犠牲防食作用を持っているこ
と、といった利点を備えているからである。
First, the reason why the outermost layer is set to pure Al plating will be described. This is because Al has the smallest microwave attenuation rate next to Cu among practical metals, and can be safely used in a microwave oven such as Cu that is not toxic even if ionized and may come into contact with food. This is because it has an advantage that it has a sacrificial anticorrosive action on Fe, though it is not as high as that of Fe.

【0011】またAlめっきはその純度が高ければ高い
ほど電気伝導率が高く、従ってマイクロ波減衰率が小さ
くなる。そのため本発明では純Alめっきという表現を
採用しているが、本発明者らが意図しているところは、
溶融Alめっき等の様に特定の目的でめっき層に添加元
素を故意に含有させていないということであり、Al地
金に不可避的に混入している不純物元素や、めっき工程
で混入してくる不純物元素が少量Alめっき層に含有さ
れることは許容されるし、またこの様に不可避的不純物
が含有されたAlめっきも本発明における純Alめっき
に包含される。
Further, the higher the purity of Al plating, the higher the electric conductivity, and therefore the smaller the microwave attenuation rate. Therefore, although the expression of pure Al plating is adopted in the present invention, what the present inventors intend is that
This means that additional elements are not intentionally included in the plating layer for a specific purpose, such as hot-dip Al plating, etc., and it is an impurity element that is unavoidably mixed in the Al base metal, or it is mixed in the plating process. It is permissible that a small amount of an impurity element is contained in the Al plating layer, and the Al plating containing such unavoidable impurities is also included in the pure Al plating in the present invention.

【0012】次にこの純Alめっきは、溶融めっき法や
溶融塩電解法などの湿式法によって行なうこともできる
が、特に好ましいのは蒸着めっき法である。その理由
は、蒸着めっき法であれば、通常の鋼板のみならずステ
ンレス鋼板やチタン板等に対しても容易に密着性の良好
な純Alめっきを施すことができるし、また、蒸着めっ
き原料の純度さえ十分に高くしておけば容易に高純度の
Alめっき層が得られるからである。
Next, this pure Al plating can be carried out by a wet method such as a hot dip plating method or a molten salt electrolysis method, but a vapor deposition plating method is particularly preferable. The reason for this is that if the vapor deposition plating method is used, it is possible to easily apply pure Al plating with good adhesion to not only ordinary steel plates but also stainless steel plates, titanium plates, etc. This is because a high-purity Al plating layer can be easily obtained if the purity is set sufficiently high.

【0013】マイクロ波減衰率をAl板と同等の低レベ
ルに抑えるためには、最表層の純Alめっき層の厚さを
1.0 μm以上にしなければならない。これは、先に述べ
た様にマイクロ波が侵入して減衰するのは、実質上表皮
厚さといわれる最表層に限られるためであるが、めっき
厚さを種々変化させた純Alめっき鋼板を試作して実験
したところ、純Alめっき層の厚さを1.0 μm以上に設
定してやれば、そのマイクロ波減衰率は純Al板と同等
に抑えられるからである。
In order to suppress the microwave attenuation rate to a low level equivalent to that of an Al plate, the thickness of the pure Al plating layer of the outermost layer is set.
It must be 1.0 μm or more. This is because, as described above, microwaves penetrate and are attenuated only in the outermost layer, which is substantially called the skin thickness, but trial production of pure Al-plated steel sheets with various plating thicknesses is performed. As a result of an experiment, if the thickness of the pure Al plating layer is set to 1.0 μm or more, the microwave attenuation rate can be suppressed to be equal to that of the pure Al plate.

【0014】従って本発明では、最表層の純Alめっき
厚さが1.0 μm以上という要件を満たすことを必須とす
るものであり、こうした要件を満たすかぎり、該最上層
めっきの下層側に耐食性や加工性改善のためZn,N
i,Co,Cr,Tiなどの種々の下地めっきを行った
ものであっても何ら本発明の趣旨を逸脱するものではな
い。また、蒸着法によりAl系合金めっきを行う場合、
めっき層が均一ではなく組成の異なる幾つかの層に分か
れることがあるが、この様な場合でも最上層が実質上純
Al層からなるものであればよい。例えば後記図2に示
す様に蒸着室の長手方向に2つのるつぼを並べて各るつ
ぼからCrとAlを別々に蒸発させてAl−Cr合金蒸
着めっきを行なう場合には、そのめっき層は実質上表面
から順に純Al層、θ相Al−Cr合金層、純Cr層の
3層構造となる。この様な場合でも、最上層が厚み1.0
μm以上の純Alめっきで構成されておればそのマイク
ロ波減衰率は純Al板と同様の値を示すのであり、この
様な多層構造のめっき層も当然本発明の範囲に含まれ
る。
Therefore, in the present invention, it is essential that the pure Al plating thickness of the outermost layer is 1.0 μm or more, and as long as these requirements are satisfied, the corrosion resistance and workability of the lower layer of the uppermost layer plating are reduced. Zn, N for improving the property
It does not depart from the gist of the present invention even if it is plated with various undercoatings such as i, Co, Cr and Ti. When performing Al-based alloy plating by vapor deposition,
The plating layer may not be uniform but may be divided into several layers having different compositions. Even in such a case, the uppermost layer may be substantially a pure Al layer. For example, as shown in FIG. 2 described later, when two crucibles are arranged in the longitudinal direction of the vapor deposition chamber and Cr and Al are vaporized separately from each crucible to perform Al-Cr alloy vapor deposition plating, the plating layer is substantially the surface. The three-layer structure includes a pure Al layer, a θ-phase Al—Cr alloy layer, and a pure Cr layer in this order. Even in such a case, the top layer has a thickness of 1.0
If it is made of pure Al plating having a thickness of μm or more, its microwave attenuation rate shows the same value as that of the pure Al plate, and thus a plating layer having such a multi-layer structure is naturally included in the scope of the present invention.

【0015】尚、マイクロ波減衰率の観点からすると純
Alめっき層厚みの上限は存在しないが、めっき層の加
工性や密着性の観点からするとあまり厚過ぎない方が良
く、耐食性等も加味した純Alめっき層の好ましい厚さ
は20μm以下、より好ましくは10μm以下である。
Although there is no upper limit on the thickness of the pure Al plating layer from the viewpoint of the microwave attenuation factor, it is better not too thick from the viewpoint of the workability and adhesion of the plating layer, and corrosion resistance and the like are also taken into consideration. The thickness of the pure Al plating layer is preferably 20 μm or less, more preferably 10 μm or less.

【0016】本発明では上記の様に最表層部の純Alめ
っき厚さを規定することによって一応その目的を果たす
ことができるが、該純Alめっき層の表面粗さをRa
1.0μmとすれば、マイクロ波減衰率を更に抑えること
ができるので好ましい。即ち純Alめっきの表面粗さも
マイクロ波減衰特性に影響を及ぼし、Ra (JISB0
601に規定する中心線平均粗さ)で表わされる表面粗
さが1.0 μmを超えるとマイクロ波減衰率は増加傾向を
示す様になる。これは、純Alよりなる表皮厚さの下限
が1.0 μmであるため、この表皮厚さより表面粗さが大
きくなるとマイクロ波の侵入により電流の流れる経路長
が実質上長くなるためと考えられる。また、こうした表
面粗さを確保する方法としては、ブライト圧延、細ダル
圧延、ヘアライン仕上げ等により表面粗さを細かくした
めっき基板を使用することも有効であるが、より好まし
いのは蒸着めっき後スキンパス圧延によってその表面の
50%以上を平滑化し、表面粗さをRa で1.0 μm以下
とする方法である。
In the present invention, the purpose can be met for the time being by defining the pure Al plating thickness of the outermost surface layer as described above, but the surface roughness of the pure Al plating layer is R a
The thickness of 1.0 μm is preferable because the microwave attenuation factor can be further suppressed. That is, the surface roughness of pure Al plating also affects the microwave attenuation characteristics, and Ra (JISB0
When the surface roughness represented by the center line average roughness defined in 601) exceeds 1.0 μm, the microwave attenuation factor tends to increase. It is considered that this is because the lower limit of the skin thickness of pure Al is 1.0 μm, so that if the surface roughness is larger than this skin thickness, the path length of the current flows substantially due to the penetration of microwaves. Further, as a method of ensuring such surface roughness, it is effective to use a plated substrate having a fine surface roughness by bright rolling, fine dull rolling, hairline finishing, etc., but more preferable is a skin pass after vapor deposition plating. This is a method in which 50% or more of the surface is smoothed by rolling and the surface roughness Ra is 1.0 μm or less.

【0017】この理由は次の通りである。即ち、蒸着純
Alめっき層は通常粒径が1μm程度のAlの結晶粒に
よって構成されており、該結晶粒径も電流の経路長に影
響を及ぼしているものと考えられるが、その表面を圧延
により平滑化すると結晶粒も平滑化されて電流の経路長
が更に短くなり、マイクロ波減衰率が減少するためと思
われる。平滑化の程度が大きくなるほど減衰率は低下す
るが、その効果は50%程度で飽和するので、それ以上
に平滑化率を高めることは無駄である。尚、平滑化率と
は、その表面をSEMや光学顕微鏡等で観察した際、圧
延によってAlめっきままのめっき結晶粒が平滑化され
ていない部分の面積率をいう。
The reason for this is as follows. That is, the vapor-deposited pure Al plating layer is usually composed of Al crystal grains having a grain size of about 1 μm, and it is considered that the crystal grain size also affects the path length of the current, but the surface thereof is rolled. It is considered that the smoothing by means also smoothes the crystal grains, further shortens the path length of the current, and decreases the microwave attenuation rate. Although the attenuation rate decreases as the degree of smoothing increases, the effect saturates at about 50%, so it is useless to increase the smoothing rate further. The smoothing rate means the area rate of the portion where the plated crystal grains as Al plated are not smoothed by rolling when the surface is observed with an SEM or an optical microscope.

【0018】かくして得られる最表層に純Alめっきの
施されためっき金属材は、該最表層のめっき特性によっ
てマイクロ波減衰率が抑えらるので、そのままで前述の
様な用途に使用することができる。しかし、使用環境に
よっては純Alめっき層が腐食されてマイクロ波減衰抑
制効果が損なわれることもあるので、純Alめっき後、
あるいは最終製品形状に加工した後で、該純Alめっき
層上にさらにクロメート処理の様な無機皮膜形成、樹脂
塗布、塗装などの処理を施すことも有効であり、腐食の
点からはその方が好ましい。要するに本発明では、純A
lめっき上に更に金属被覆を形成しない限り、他の無機
質皮膜や有機質皮膜を形成した場合でも、マイクロ波減
衰抑制効果が阻害されることはない。
The thus-obtained plated metal material having the pure Al plating applied to the outermost layer has a microwave attenuation rate suppressed by the plating characteristics of the outermost layer, and therefore can be used as it is for the above-mentioned applications. it can. However, depending on the use environment, the pure Al plating layer may be corroded and the effect of suppressing microwave attenuation may be impaired.
Alternatively, after processing into the final product shape, it is also effective to further perform an inorganic film formation such as a chromate treatment, a resin coating, and a coating on the pure Al plating layer, which is more preferable from the viewpoint of corrosion. preferable. In short, in the present invention, pure A
As long as a metal coating is not further formed on the 1-plating, the microwave attenuation suppressing effect is not impaired even when another inorganic coating or organic coating is formed.

【0019】尚上記の様な純Alめっきの施される基材
の種類には一切制限がなく、例えばチタン、4−2アロ
イ(高Ni合金鋼)などの高合金鋼、ハステロイのよう
なNi合金、ジュラルミンのようなAl合金等どんな金
属でも適用可能であるが、加工性やコスト等を総合的に
考慮して最も一般的なのは鋼板およびステンレス鋼板で
ある。次に実施例を挙げて本発明をより具体的に説明す
るが、本発明はもとより下記実施例によって制約を受け
るものではない。
There is no limitation on the kind of the base material on which the pure Al plating as described above is applied. For example, titanium, high alloy steel such as 4-2 alloy (high Ni alloy steel), Ni such as Hastelloy, etc. Although any metal such as an alloy or an Al alloy such as duralumin can be applied, a steel plate and a stainless steel plate are the most common in consideration of workability and cost. Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited by the following examples.

【0020】[0020]

【実施例】厚さ0.5mm×幅780mmのAlキルド
冷延鋼帯、または厚さ0.5mm×幅780mmのSU
S304ステンレス鋼帯を基板として使用し、図1また
は図2(いずれも模式図)に示す連続蒸着めっき設備に
よって純AlめっきまたはAl−Cr合金めっきを行な
った。また一部の供試材については、蒸着めっき後更に
スキンパス圧延機によりスキンパス圧延して表面平滑化
処理を行なった。
[Example] Al-killed cold-rolled steel strip having a thickness of 0.5 mm and a width of 780 mm, or a SU having a thickness of 0.5 mm and a width of 780 mm
Using S304 stainless steel strip as a substrate, pure Al plating or Al-Cr alloy plating was performed by the continuous vapor deposition plating equipment shown in FIG. 1 or 2 (both are schematic diagrams). Further, some of the test materials were subjected to skin pass rolling with a skin pass rolling machine after vapor deposition plating to perform surface smoothing treatment.

【0021】尚図1において、1は繰出しロール、2は
シャー、3は溶接機、4は前処理室、5は入側真空ロッ
クシステム、6,8は電子銃、7は第1蒸着室、9は第
2蒸着室、10は出側真空ロックシステム、11はスキ
ンパス圧延機、12はシャー、13は巻取りロール、1
4は鋼帯を夫々表す。また図2において、15は蒸着
室、16は電子銃、17は鋼帯、18は電子ビーム、1
9はCr用るつぼ、20はAl用るつぼを夫々示す。
In FIG. 1, 1 is a feeding roll, 2 is a shear, 3 is a welder, 4 is a pretreatment chamber, 5 is an inlet side vacuum lock system, 6 and 8 are electron guns, 7 is a first vapor deposition chamber, 9 is a second vapor deposition chamber, 10 is an outlet side vacuum lock system, 11 is a skin pass rolling mill, 12 is a shear, 13 is a take-up roll, 1
4 represents steel strips, respectively. In FIG. 2, 15 is a vapor deposition chamber, 16 is an electron gun, 17 is a steel strip, 18 is an electron beam, 1
9 indicates a crucible for Cr, and 20 indicates a crucible for Al.

【0022】従って図1の方法によれば、鋼帯14の両
面に純Alめっきを施すことができる。また図2では鋼
帯17の片面にCr−Al等の蒸着めっき層が形成され
るが、この方法では鋼帯17の表面にまずCrの単独蒸
気が蒸着した後、CrとAlの混合蒸気が蒸着し、最後
に純Al蒸気が蒸着するので、蒸着めっき層は最表層側
からみて純Al,Al−Cr合金、Crよりなる3層構
造となる。従って鋼帯17の走行速度やAl及びCrの
蒸発速度等をコントロールすることによって、最表層部
の純Alめっき厚さを調整することができる。
Therefore, according to the method of FIG. 1, both surfaces of the steel strip 14 can be plated with pure Al. Further, in FIG. 2, a vapor-deposited plating layer of Cr-Al or the like is formed on one surface of the steel strip 17, but in this method, a single vapor of Cr is first deposited on the surface of the steel strip 17, and then a mixed vapor of Cr and Al is formed. Since vapor deposition is performed and pure Al vapor is finally vapor deposited, the vapor deposition plating layer has a three-layer structure including pure Al, Al—Cr alloy, and Cr when viewed from the outermost layer side. Therefore, the pure Al plating thickness of the outermost layer can be adjusted by controlling the running speed of the steel strip 17 and the evaporation speed of Al and Cr.

【0023】得られた各供試材について、下記の方法で
マイクロ波減衰率を調べた。即ち供試材を直径110m
mの円盤状にに打ち抜き、該打ち抜き材Aを図3に示す
銅製の空胴共振器Bの1端面に取りつけてボルトCで固
定し(Dはアンテナを示す)、下記の条件で空胴共振器
のQ値を測定する。尚供試材のマイクロ波減衰率が大き
いほどQ値は小さくなる。 <Q値の測定条件> ・周波数;2.45GHz ・測定モード;H111 モード ・測定装置;HEWLETT-PACKARD 8510B NETWORKANALYZER
The microwave attenuation rate of each of the obtained test materials was examined by the following method. That is, the test material has a diameter of 110 m.
m is punched into a disk shape, the punched material A is attached to one end face of a copper cavity resonator B shown in FIG. 3 and fixed with a bolt C (D is an antenna), and cavity resonance is performed under the following conditions. Measure the Q value of the vessel. The Q value decreases as the microwave attenuation rate of the test material increases. <Q value measurement conditions> ・ Frequency: 2.45 GHz ・ Measurement mode: H 111 mode ・ Measuring device: HEWLETT-PACKARD 8510B NETWORK ANALYZER

【0024】また比較材として溶融Alめっき鋼板、溶
融Znめっき鋼板、合金化溶融Znめっき鋼板、純Al
めっき板、SUS304鋼板、Alキルド冷延鋼板を使
用し、同様にしてQ値を測定した。供試材の構成および
Q値測定結果をまとめて表1および表2に示す。
Further, as comparative materials, hot-dip Al-plated steel sheet, hot-dip Zn-plated steel sheet, alloyed hot-dip Zn-plated steel sheet, pure Al
The Q value was measured in the same manner using a plated plate, a SUS304 steel plate, and an Al-killed cold rolled steel plate. The configurations of the test materials and the Q value measurement results are summarized in Tables 1 and 2.

【0025】[0025]

【表1】 [Table 1]

【0026】[0026]

【表2】 [Table 2]

【0027】表1,2からも明らかである様に、実施例
(No. 1〜17)のめっき鋼板はいずれもQ値が190
00以上であって、純Al板を用いたもの(表2の比較
No.8)に匹敵するQ値を示し、マイクロ波減衰率は小
さい。これに対しSi含有溶融Alめっき鋼板(比較N
o. 3)、溶融Znめっき鋼板(比較No. 4)、合金化
溶融Znめっき鋼板(比較No. 5)、Alキルド冷延鋼
板(比較No. 6)、SUS304鋼板(比較No. 7)を
用いたもののQ値はいずれも小さく、実施例に比べてマ
イクロ波減衰率が大きい。また純Alめっきを施したも
のでも、その厚さが1.0 μmに満たないもの(比較No.
1,2)のQ値は小さくマイクロ波減衰抑制効果が不十
分である。
As is clear from Tables 1 and 2, the plated steel sheets of Examples (Nos. 1 to 17) all have a Q value of 190.
00 or more and using a pure Al plate (comparison of Table 2
The Q value is comparable to that of No. 8), and the microwave attenuation rate is small. On the other hand, Si-containing hot-dip Al-plated steel sheet (Comparative N
o.3), hot-dip galvanized steel sheet (comparative No. 4), alloyed hot-dip galvanized steel sheet (comparative No. 5), Al-killed cold-rolled steel sheet (comparative No. 6), SUS304 steel sheet (comparative No. 7). The used Q values are all small, and the microwave attenuation rate is large as compared with the examples. In addition, even if pure Al plating is applied, the thickness is less than 1.0 μm (Comparative No.
The Q value of 1 and 2) is small and the effect of suppressing microwave attenuation is insufficient.

【0028】また表1の実施例No. 6と、これにめっき
後スキンパス圧延を施した実施例No. 7、8、9を比較
すると、スキンパス圧下率を高めて表面の平滑化率を5
0%以上とすることによってQ値はスキンパス圧下しな
いものに比べ更に上昇し、マイクロ波減衰率が低下する
ことがわかる。
In addition, comparing Example No. 6 in Table 1 with Example Nos. 7, 8 and 9 in which this was subjected to skin pass rolling after plating, the skin pass reduction rate was increased and the surface smoothness rate was increased to 5.
It can be seen that when the content is 0% or more, the Q value is further increased and the microwave attenuation rate is decreased as compared with the case where the skin pass is not reduced.

【0029】[0029]

【発明の効果】本発明は以上の様に構成されており、最
表面に特定厚さの純Alめっき層を形成することによっ
て、マイクロ波減衰率が小さくしかも耐食性や加工性に
優れ且つ安価なめっき金属材を提供するものであり、電
子レンジの内箱や導波管の様にマイクロ波を封じこめる
必要がある部品の構成材料として広く活用することがで
きる。
EFFECTS OF THE INVENTION The present invention is constructed as described above. By forming a pure Al plating layer having a specific thickness on the outermost surface, the microwave attenuation factor is small, and the corrosion resistance and workability are excellent and the cost is low. The plated metal material is provided, and can be widely used as a constituent material of parts such as an inner box of a microwave oven and a waveguide that need to contain microwaves.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例で採用した蒸着めっき法を示す概念図で
ある。
FIG. 1 is a conceptual diagram showing a vapor deposition plating method used in Examples.

【図2】実施例で採用した他の蒸着めっき法を示す概念
図である。
FIG. 2 is a conceptual diagram showing another vapor deposition plating method adopted in Examples.

【図3】Q値の測定に用いた空胴共振器の模式図であ
る。 1 繰出しリール 6,8,16 電子銃 7 第1蒸着室 9 第2蒸着室 11 圧延機 13 巻取りリール 14,17 鋼帯 18 電子ビーム
FIG. 3 is a schematic diagram of a cavity resonator used for measuring a Q value. 1 Feeding reel 6,8,16 Electron gun 7 First evaporation chamber 9 Second evaporation chamber 11 Rolling machine 13 Take-up reel 14,17 Steel strip 18 Electron beam

───────────────────────────────────────────────────── フロントページの続き (72)発明者 三宅 昭二 加古川市平岡町中野212−5 (72)発明者 板坂 昭美 加古川市野口町長砂97−21 (72)発明者 川福 純司 神戸市東灘区魚崎中町1−1−24 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Shoji Miyake 212-5 Nakano, Hiraoka-cho, Kakogawa-shi (72) Inventor Akemi Itasaka 97-21 Nagasuna, Noguchi-cho, Kakogawa-shi (72) Inventor Junji Kawafuku, Higashinada-ku, Kobe-shi 1-1-24 Uozaki Nakamachi

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 最表層部に厚さ1.0μm以上の純Al
めっき層が形成されたものであることを特徴とするマイ
クロ波減衰率の小さいめっき金属材。
1. A pure Al layer having a thickness of 1.0 μm or more on the outermost layer.
A plated metal material having a small microwave attenuation rate, which is characterized in that a plated layer is formed.
【請求項2】 表面粗さがRa ≦1.0μm(ただしR
a はJIS B0601に規定する中心線平均粗さ)で
ある請求項1記載のマイクロ波減衰率の小さいめっき金
属材。
2. Surface roughness R a ≦ 1.0 μm (provided that R a
The plated metal material having a small microwave attenuation rate according to claim 1, wherein a is a center line average roughness specified in JIS B0601).
【請求項3】 めっき表面の平滑化率が50%以上であ
る請求項1または2記載のマイクロ波減衰率の小さいめ
っき金属材。
3. The plated metal material having a small microwave attenuation rate according to claim 1, wherein the smoothing rate of the plated surface is 50% or more.
【請求項4】 帯状金属基材の表面に、蒸着めっき法に
より純Alめっきを施した後、スキンパス圧延を行うこ
とを特徴とする請求項1〜3のいずれかに記載のマイク
ロ波減衰率の小さいめっき金属材を製造する方法。
4. The microwave attenuation factor according to claim 1, wherein pure aluminum plating is applied on the surface of the strip-shaped metal base material by vapor deposition plating and then skin pass rolling is performed. Method for producing small plated metal material.
JP33433091A 1991-11-22 1991-11-22 Plated metallic material low in microwave damping factor and its manufacture Withdrawn JPH05148651A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33433091A JPH05148651A (en) 1991-11-22 1991-11-22 Plated metallic material low in microwave damping factor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33433091A JPH05148651A (en) 1991-11-22 1991-11-22 Plated metallic material low in microwave damping factor and its manufacture

Publications (1)

Publication Number Publication Date
JPH05148651A true JPH05148651A (en) 1993-06-15

Family

ID=18276154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33433091A Withdrawn JPH05148651A (en) 1991-11-22 1991-11-22 Plated metallic material low in microwave damping factor and its manufacture

Country Status (1)

Country Link
JP (1) JPH05148651A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021132195A1 (en) * 2019-12-26 2021-07-01 京セラ株式会社 Method for manufacturing resonant structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021132195A1 (en) * 2019-12-26 2021-07-01 京セラ株式会社 Method for manufacturing resonant structure

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