JP7351404B2 - 固体量子メモリ - Google Patents
固体量子メモリ Download PDFInfo
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- JP7351404B2 JP7351404B2 JP2022506991A JP2022506991A JP7351404B2 JP 7351404 B2 JP7351404 B2 JP 7351404B2 JP 2022506991 A JP2022506991 A JP 2022506991A JP 2022506991 A JP2022506991 A JP 2022506991A JP 7351404 B2 JP7351404 B2 JP 7351404B2
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- quantum memory
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- state quantum
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- 230000015654 memory Effects 0.000 title claims description 30
- 239000007787 solid Substances 0.000 title claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 21
- 230000005284 excitation Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 11
- 238000005424 photoluminescence Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Optimization (AREA)
- Computing Systems (AREA)
- Artificial Intelligence (AREA)
- Computational Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- Mathematical Analysis (AREA)
- Software Systems (AREA)
- Pure & Applied Mathematics (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Micromachines (AREA)
Description
Claims (6)
- 基板の上に変位可能に支持された振動部と、
前記振動部を励振する励振部と、
前記振動部に導入されている希土類元素から構成された電子2準位系と
を備え、
前記振動部は、イットリウムシリケイトから構成されている固体量子メモリ。 - 請求項1記載の固体量子メモリにおいて、
前記希土類元素は、前記振動部にイオンの状態で導入されていることを特徴とする固体量子メモリ。 - 請求項1または2記載の固体量子メモリにおいて、
前記希土類元素は、イオンのエネルギー準位がクラマース縮退を持つことを特徴とする固体量子メモリ。 - 請求項1~3のいずれか1項に記載の固体量子メモリにおいて、
前記振動部は、片持ち梁構造とされていることを特徴とする固体量子メモリ。 - 請求項1~3のいずれか1項に記載の固体量子メモリにおいて、
前記振動部は、両持ち梁構造とされていることを特徴とする固体量子メモリ。 - 請求項1~5のいずれか1項に記載の固体量子メモリにおいて、
前記励振部は、圧電材料から構成されていることを特徴とする固体量子メモリ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/009939 WO2021181444A1 (ja) | 2020-03-09 | 2020-03-09 | 固体量子メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021181444A1 JPWO2021181444A1 (ja) | 2021-09-16 |
JP7351404B2 true JP7351404B2 (ja) | 2023-09-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2022506991A Active JP7351404B2 (ja) | 2020-03-09 | 2020-03-09 | 固体量子メモリ |
Country Status (3)
Country | Link |
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US (1) | US20230054881A1 (ja) |
JP (1) | JP7351404B2 (ja) |
WO (1) | WO2021181444A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011036814A1 (ja) | 2009-09-28 | 2011-03-31 | 株式会社 東芝 | 量子計算機および量子メモリー |
JP2015167176A (ja) | 2014-03-04 | 2015-09-24 | 日本電信電話株式会社 | 量子メモリの制御方法 |
JP2017151248A (ja) | 2016-02-24 | 2017-08-31 | 日本電信電話株式会社 | 量子光学材料 |
JP2019029511A (ja) | 2017-07-31 | 2019-02-21 | 日本電信電話株式会社 | 固体量子メモリ |
-
2020
- 2020-03-09 WO PCT/JP2020/009939 patent/WO2021181444A1/ja active Application Filing
- 2020-03-09 JP JP2022506991A patent/JP7351404B2/ja active Active
- 2020-03-09 US US17/799,560 patent/US20230054881A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011036814A1 (ja) | 2009-09-28 | 2011-03-31 | 株式会社 東芝 | 量子計算機および量子メモリー |
US20120170091A1 (en) | 2009-09-28 | 2012-07-05 | Hayato Goto | Quantum computer and quantum memory |
JP2015167176A (ja) | 2014-03-04 | 2015-09-24 | 日本電信電話株式会社 | 量子メモリの制御方法 |
JP2017151248A (ja) | 2016-02-24 | 2017-08-31 | 日本電信電話株式会社 | 量子光学材料 |
JP2019029511A (ja) | 2017-07-31 | 2019-02-21 | 日本電信電話株式会社 | 固体量子メモリ |
Non-Patent Citations (1)
Title |
---|
平石真也,167Er3+:Y2SiO5における超微細構造準位間でのラビ振動の測定,第65回応用物理学会春季学術講演会講演予稿集,日本,2018年03月05日,18p-C301-10 |
Also Published As
Publication number | Publication date |
---|---|
US20230054881A1 (en) | 2023-02-23 |
WO2021181444A1 (ja) | 2021-09-16 |
JPWO2021181444A1 (ja) | 2021-09-16 |
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