JP2015167176A - 量子メモリの制御方法 - Google Patents
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Abstract
【解決手段】ステップS102で、スピンアンサンブルに量子情報を蓄積してから所定の時間tの後に、スピンアンサンブルに磁場を印加してスピンアンサンブルを構成しているスピン1粒子のスピンの向きを、スピンアンサンブルに印加する磁場を断熱的に変化させて磁場の向きを反転させることで反転させる。次に、ステップS103で、スピンアンサンブルを構成しているスピン1粒子のスピンの向きを反転させてから、上記所定の時間tだけ、スピンアンサンブルの量子系をハミルトニアンによって時間発展させる。
【選択図】 図1
Description
以下、本発明の実施例について図3を用いて説明する。図3は、本発明の実施例における量子メモリの制御方法を適用する量子メモリの構成例を示す構成図である。この量子メモリは、複数のNV中心を有するダイヤモンドからなるスピンアンサンブル構成部101と、超伝導磁束量子ビット102と、外部制御線103,外部制御線104とを備える(非特許文献2,3参照)。図中、超伝導磁束量子ビット102を構成するジョセフソン接合は、「×」で示している。
Claims (2)
- スピン1粒子からなるスピンアンサンブルに超伝導量子ビットの状態を転送して前記超伝導量子ビットの量子情報を前記スピンアンサンブルに蓄積する第1ステップと、
前記スピンアンサンブルに前記量子情報を蓄積してから所定の時間後に、前記スピンアンサンブルに磁場を印加して前記スピンアンサンブルを構成しているスピン1粒子のスピンの向きを反転させる第2ステップと、
前記スピンアンサンブルを構成しているスピン1粒子のスピンの向きを反転させてから、前記所定の時間だけ、前記スピンアンサンブルの量子系をハミルトニアンによって時間発展させる第3ステップと
を備え、
前記第2ステップでは、前記スピンアンサンブルに印加する磁場を断熱的に変化させて磁場の向きを反転させる
ことを特徴とする量子メモリの制御方法。 - 請求項1記載の量子メモリの制御方法において、
前記スピンアンサンブルは、複数のNV中心を有するダイヤモンドから構成されたものであることを特徴とする量子メモリの制御方法。
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