JP7348857B2 - Manufacturing method of semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device having a three-dimensional stacked structure formed by stacking a plurality of semiconductor circuit layers, and particularly to a method for electrically connecting semiconductor substrates or semiconductor elements stacked on a substrate in the stacking direction. This invention relates to an interlayer connection method.

2. Description of the Related Art As various electronic devices such as personal computers, digital cameras, and mobile phones become smaller and more sophisticated, there is a rapidly increasing demand for smaller, thinner, and higher-density semiconductor devices. Therefore, insulating materials, stacked semiconductor devices, etc. that can cope with the increase in substrate area to improve productivity and can be used in high-density packaging technologies such as chip size packages, chip scale packages (CSP), and three-dimensional stacking, etc. Development of a manufacturing method is desired.

Furthermore, as electronic equipment becomes more sophisticated and more compact, the process for manufacturing semiconductor elements continues to evolve in order to meet the demands for higher density and higher functionality of semiconductor elements. For example, wiring rules have become finer in response to narrower pitches and higher speeds, and semiconductor elements are becoming more fragile using ultra-low dielectric materials in response to higher frequencies.

2. Description of the Related Art Conventionally, as a method for manufacturing a semiconductor device by connecting an electrode formed on a semiconductor element to a wiring pattern formed on a substrate, an example of a method for manufacturing a semiconductor device is bonding of a semiconductor element and a substrate by wire bonding. However, when bonding a semiconductor element and a substrate by wire bonding, it is necessary to provide a space above the semiconductor element to draw out the metal wires, which makes the equipment large and difficult to miniaturize. It was not possible to meet the demands for high-density packaging. Therefore, as methods for mounting semiconductor elements to realize three-dimensional packaging, wafer bonding, in which substrates with wiring formed thereon are bonded together, and chip scale packaging and flip-chip mounting, in which semiconductor elements are mounted on substrates, have been devised. In particular, wiring rules are becoming finer in response to narrower pitches and higher speeds, and short wiring connections are required to take advantage of the circuit characteristics of semiconductor devices using ultra-low dielectric materials in response to higher frequencies. A flip-chip mounting method using bumps on electrodes is desired, and in order to cope with the aforementioned weakening of semiconductor elements, bump formation with low loads and mounting with low loads are required.

However, if the semiconductor element mounting board connected in this way is used as is, the electrode portion of the semiconductor is exposed to the air, and the moisture resistance reliability is extremely low. There is also the problem that stress is applied to the electrode connection portion, resulting in disconnection. Therefore, after connecting the bumps and the circuit board, in order to improve the reliability of the joint, a liquid resin called an underfill material is filled into the gap between the semiconductor element and the circuit board, and is cured. A method of fixing the circuit board is being used.

However, a semiconductor element that is particularly mounted using flip-chip mounting generally has a large number of electrodes, and the electrodes are arranged around the semiconductor element due to the circuit design of the semiconductor element. When filling with underfill material, liquid resin is poured from between the electrodes of these semiconductor devices using gravity and capillary action, but when the distance between the semiconductor device and the circuit board becomes narrow from several tens of micrometers to about 500 micrometers, the central part of the semiconductor device There was a problem in that the resin did not spread sufficiently, and as a result, unfilled areas were likely to be formed, resulting in unstable operation of the semiconductor element (Patent Document 1). In addition, the filling of the underfill material is also time-consuming because it relies on gravity and capillary action.Furthermore, the underfill material is generally a thermosetting resin, and the curing process is also time-consuming. Further, in the electrical connection between the electrodes of the semiconductor element and the circuit board, there is a problem in that short-circuiting of the conductive resin or solder is likely to occur due to the narrow electrode spacing.

Against this background, as a method for forming bumps on the electrodes of semiconductor elements for flip-chip mounting, a photosensitive resin layer is thermally welded and exposed to light on the electrode formation surface of a base material such as a semiconductor or wafer. , a technique has been proposed in which an aperture is formed on the electrode of a photosensitive resin layer by development, and a bump is formed by plating the electrode portion exposed in the aperture (Patent Document 2). .

A conventional method for manufacturing a semiconductor element with bumps and an example of a semiconductor device of a semiconductor package type in which the semiconductor element with bumps obtained by this method is flip-chip mounted will be explained with reference to FIGS. 7(a) and 7(b). . To manufacture a semiconductor element with bumps, first, as shown in FIG. 7(a), a photosensitive polyimide resin 2101 is applied onto the electrode formation surface of the substrate or the semiconductor element 2102 and dried, followed by mask exposure and development. Then, a portion of the photosensitive polyimide resin 2101 on the electrode pad 2110 is removed to form an opening. Next, after thermosetting the photosensitive polyimide resin 2101 to form a protective film, bumps 2114 are formed on the electrode pads 2110 exposed in the openings by plating technology, as shown in FIG. 7(b). A bumped semiconductor element 2120 is obtained. Here, the plating is performed, for example, by forming a passivation film such as a Ti film on the substrate or the Al electrode pad 2110 of the semiconductor element 2102, followed by Cu plating, and then Cr or Ni and Au plating of about 0.5 to 2 μm. By overlapping them, a plating bump 2114 having a total thickness of about 5 to 30 μm is formed.

However, in the conventional example of forming bumps on a semiconductor element by plating as shown in FIGS. 7(a) and 7(b), in order to form bumps at a narrow pitch due to recent demands, it is necessary to form bumps on the upper part of the electrode of the protective film. The via hole has a small diameter to match the narrow pitch, but this type of opening, so-called via hole, has a high aspect ratio, making it difficult for the plating solution that forms the bump to penetrate and renewal, so the plating rate is slow and the plating layer Variations in the thickness are likely to occur (Patent Document 3).

Furthermore, since plated bumps are metal bumps with high rigidity, the bumps themselves do not have sufficient follow-up deformability under low stress loads to avoid destruction of fragile semiconductor elements, and when used in flip-chip mounting. In order to make each bump of a semiconductor element follow the warpage and undulation of the circuit board and to ensure sufficient electrical connection, flip-chip mounting with high loads is required. Recent fragile semiconductor devices that use ultra-low dielectric materials have the problem of being easily destroyed and damaging the active elements beneath the electrodes.

In addition, since the photosensitive polyimide resin used as the photosensitive resin layer generally has an elastic modulus exceeding 2 GPa, it cannot sufficiently absorb the unevenness of the substrate surface when adhering to the substrate after pattern formation by lithography. (voids) are likely to occur. If there are voids, there is a problem in that the adhesive strength of the substrate decreases and the reliability decreases. In order to solve this problem, methods have been proposed such as forming photosensitive resin layers on both the upper and lower substrates and bonding methods using film-formed insulating resin layers. There was a problem that the cost of the insulating material was high (Patent Document 4).

Furthermore, when bonding substrates using high elastic modulus materials, it is not possible to absorb the stress caused by the difference in thermal expansion of the materials used for substrates and packaging, and stress is generated at the bumps and at the interface between the bumps and the insulating resin layer. This concentration caused peeling at the interface between the bump and the insulating resin layer, cracking of the insulating resin layer, and the reliability of the package was impaired.

Japanese Patent Application Publication No. 10-270497 Japanese Patent Application Publication No. 2000-357704 Japanese Patent Application Publication No. 2007-53256 Patent No. 6571585

The present invention has been made in view of the above circumstances, and is aimed at manufacturing a semiconductor device having a laminated structure with electrical connection between substrates or between a substrate and a chip through a conductive connection portion provided to be exposed to the outside of the substrate. By using adhesion through a photosensitive insulating layer, the semiconductor element and the circuit board can be easily adhered to each other even if the electrodes of the semiconductor element are highly dense, and it has high adhesion and can be used for electrical and electronic components. An object of the present invention is to provide a method for manufacturing a semiconductor device having high reliability and insulation properties.

In order to solve the above problems, the present invention provides a method for manufacturing a semiconductor device having a photosensitive insulating layer as described below.
That is, the present invention provides a method for manufacturing a semiconductor device having a three-dimensional stacked structure formed by stacking a plurality of semiconductor circuit layers,
(1) A first substrate provided with an electrode pad, which is a conductive connection part, exposed to the outside of the substrate, or a conductive plug made of a conductive material so as to protrude from the electrode pad;
A step of preparing a second substrate or a second element provided with a conductive plug made of a conductive material so as to be exposed to the outside of the substrate,
The prepared first substrate, second substrate, and second element are arranged so that when the second substrate or the second element is arranged facing the first substrate, the electrode pad or the second element of the first substrate is one in which the conductive plug of the second substrate or the second element is designed so as to be located on the conductive plug,
(2) (i) Covering the electrode pad or conductive plug forming surface of the first substrate with a photosensitive insulating layer; (ii) Insulating the conductive plug forming surface of the second substrate or the second element with a photosensitive insulating layer; forming a photosensitive insulating layer on the surface by performing one or both of the following steps:
(3) The photosensitive insulating layer formed on the electrode pad or conductive plug formation surface on the first substrate and/or the conductive plug formation surface on the second substrate or the second element. forming an opening pattern on the electrode pad or the conductive plug by lithography through a mask;
(4) By adhering the second substrate or the second element to a predetermined position of the first substrate by pressure contact, the second substrate or the second element is bonded to the first substrate through the photosensitive insulating layer in which the opening pattern is formed. a step of bonding two substrates or the second element;
(5) further pressurizing the bonded first substrate and the second substrate or the second element with an additional pressure higher than that at the time of pressure contact;
(6) a step of fixing and electrically connecting the electrode pad or conductive plug of the first substrate and the conductive plug of the second substrate or the second element by a first baking; and (7) the photosensitive a step of curing the insulating layer in a second bake;
After
A method for manufacturing a semiconductor device is provided, wherein the photosensitive insulating material used for forming the photosensitive insulating layer has an elastic modulus of 0.01 to 1.5 GPa at 25° C. after being exposed to light and cured.

With such a manufacturing method, a semiconductor device in which a photosensitive insulating layer is embedded can be manufactured without creating a gap between the first substrate and the second substrate or the second element.

In this case, a substrate on which the second element is installed with temporary adhesive is used as the second substrate, or an element formed by cutting the second substrate into pieces is used as the second element. Good too.

Moreover, it is preferable that the photosensitive insulating layer uses one type of organic layer selected from acrylic resin, polyimide resin, polybenzoxazole (PBO) resin, epoxy resin, and silicone resin.

With such a structure, the effects of the present invention can be further improved.

（式中、Ｒ^１～Ｒ^４は同一でも異なっていてもよい炭素数１～８の１価炭化水素基を示す。ｍは１～１００の整数である。ａ、ｂ、ｃ、ｄは０又は正数、且つａ、ｂ、ｃ、ｄは同時に０になることがない。但し、ａ＋ｂ＋ｃ＋ｄ＝１である。更に、Ｘは下記一般式（２）で示される有機基、Ｙは下記一般式（３）示される有機基である。）

（式中、Ｚは

のいずれかより選ばれる２価の有機基であり、ｎは０又は１である。Ｒ^５及びＲ^６はそれぞれ炭素数１～４のアルキル基又はアルコキシ基であり、相互に異なっていても同一でもよい。ｋは０、１、２のいずれかである。）

（式中、Ｖは

のいずれかより選ばれる２価の有機基であり、ｐは０又は１である。Ｒ^７及びＲ^８はそれぞれ炭素数１～４のアルキル基又はアルコキシ基であり、相互に異なっていても同一でもよい。ｈは０、１、２のいずれかである。）
（Ｂ）ホルムアルデヒド又はホルムアルデヒド－アルコールにより変性されたアミノ縮合物、１分子中に平均して２個以上のメチロール基又はアルコキシメチロール基を有するフェノール化合物から選ばれる１種又は２種以上の架橋剤、
（Ｃ）波長１９０～５００ｎｍの光によって分解し、酸を発生する光酸発生剤、
（Ｄ）エポキシ基含有架橋剤、
（Ｅ）溶剤、
を含有してなる化学増幅型ネガ型レジスト組成物を使用して基板上に塗布し、乾燥することにより得られる被膜、又は前記組成物を支持フィルムに塗布・乾燥して得られる光硬化性ドライフィルムを基板に貼付することによって得られる被膜を用いることができる。 Moreover, the present invention provides, as the photosensitive resin layer,
(A) a silicone skeleton-containing polymer compound having a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 3,000 to 500,000;

(In the formula, R ¹ to R ⁴ represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, which may be the same or different. m is an integer of 1 to 100. a, b, c, d are 0 or a positive number, and a, b, c, and d cannot be 0 at the same time.However, a+b+c+d=1.Furthermore, X is an organic group represented by the following general formula (2), and Y is the following general formula. (3) The organic group shown.)

(In the formula, Z is

is a divalent organic group selected from any of the following, and n is 0 or 1. R ⁵ and R ⁶ are each an alkyl group or an alkoxy group having 1 to 4 carbon atoms, and may be different or the same. k is 0, 1, or 2. )

(In the formula, V is

is a divalent organic group selected from any of the following, and p is 0 or 1. R ⁷ and R ⁸ are each an alkyl group or an alkoxy group having 1 to 4 carbon atoms, and may be different or the same. h is either 0, 1, or 2. )
(B) one or more crosslinking agents selected from formaldehyde or an amino condensate modified with formaldehyde-alcohol, and a phenol compound having an average of two or more methylol groups or alkoxymethylol groups in one molecule;
(C) a photoacid generator that is decomposed by light with a wavelength of 190 to 500 nm and generates acid;
(D) an epoxy group-containing crosslinking agent,
(E) solvent;
A film obtained by coating a chemically amplified negative resist composition containing a chemically amplified negative resist composition on a substrate and drying it, or a photocurable dry film obtained by coating and drying the composition on a support film. A coating obtained by attaching a film to a substrate can be used.

With such a semiconductor device, the semiconductor device has a low elastic modulus even after curing and has reduced warpage.

Further, in the present invention, in the step (5), the additional pressure can be 0.1 MPa to 30 MPa.

With such a manufacturing method, a semiconductor device in which a photosensitive insulating layer is embedded can be manufactured without creating a gap between the first substrate and the second substrate or the second element.

According to the method of manufacturing a semiconductor device of the present invention, the following effects can be provided.

a first substrate provided with an electrode pad that is a conductive connection part exposed to the outside of the substrate or a conductive plug made of a conductive material so as to protrude from the electrode pad; and a first substrate disposed opposite to the first substrate. When forming a photosensitive insulating layer on either or both of the second substrate or the second element, which is provided with a conductive plug made of a conductive material and exposed to the outside of the substrate, the photosensitive insulating layer is Since it is possible to use coating such as spin coating or a photocurable dry film using a photosensitive insulating layer, the height of the conductive plug after connection and the design of the first substrate and the second substrate or the second element can be It is possible to form a photosensitive insulating layer according to the gap.

Even if the electrode pad and conductive plug part are covered with an insulating layer in the photosensitive insulating layer formation process, the unnecessary insulating layer can be easily removed by forming an opening pattern on the photosensitive insulating layer by lithography using a mask. Since it can be removed quickly, electrical connection between the electrode pad portion and the conductive plug portion can be ensured even if the electrodes are densely packed.
Furthermore, insulation between the conductive plugs can be ensured by performing lithography in accordance with the size and arrangement of the electrode pads or conductive plugs.

Furthermore, since the photosensitive insulating layer in the present invention has a low elastic modulus of 0.01 to 1.5 GPa even after curing, stress caused by the difference in thermal expansion of the materials used after lamination of substrates and chips. It is suitable for stacking or mounting on a wiring board because it can absorb the amount of heat and reduce warping of the semiconductor device, which is a concern when it is cut into pieces.

1 is a schematic cross-sectional view showing an example of a semiconductor device having a connection structure of the present invention. FIG. 3 is a schematic cross-sectional view for explaining step (1) in an example of the method for manufacturing a semiconductor device of the present invention (first substrate). FIG. 3 is a schematic cross-sectional view for explaining step (1) in an example of the method for manufacturing a semiconductor device of the present invention (second substrate or second element). FIG. 3 is a schematic cross-sectional view for explaining step (2) in an example of the method for manufacturing a semiconductor device of the present invention. FIG. 3 is a schematic cross-sectional view for explaining step (3) in an example of the method for manufacturing a semiconductor device of the present invention. FIG. 3 is a schematic cross-sectional view for explaining steps (4) to (5) in an example of the method for manufacturing a semiconductor device of the present invention. FIG. 2 is an explanatory diagram showing a conventional method for manufacturing a semiconductor device.

As mentioned above, the demand for further miniaturization, thinning, and higher density in semiconductor devices is rapidly increasing, and fine electrodes are formed on semiconductor elements, and these electrodes are directly connected electrically and There has been a need for the development of an adhesive material that ensures insulation between semiconductor devices and has sufficient adhesion, a semiconductor device that can be easily mounted on a wiring board, and a semiconductor device that can be easily stacked, and a method for manufacturing the same.

As a result of intensive studies to achieve the above object, the present inventors have discovered a method for manufacturing a semiconductor device using a resist composition material as a photosensitive insulating layer, the photosensitive insulating layer being spun on a substrate. By laminating the coat or resist composition material with a dry film used for the photosensitive insulating layer, the photosensitive insulating layer is embedded without creating a gap between the first substrate and the second substrate or the second element. By patterning the photosensitive insulating layer formed on the substrate or element by lithography using a mask, the opening pattern on the electrode pad on the semiconductor element and the electrode on the substrate can be patterned. We have discovered that the above object can be achieved by forming an opening pattern on the pad, then bonding the first substrate and the second substrate or the second element by pressure, and further applying pressure, and have accomplished the present invention. reached.

That is, the present invention is a method for manufacturing a semiconductor device having a three-dimensional stacked structure configured by stacking a plurality of semiconductor circuit layers,
(1) A first substrate provided with an electrode pad, which is a conductive connection part, exposed to the outside of the substrate, or a conductive plug made of a conductive material so as to protrude from the electrode pad;
A step of preparing a second substrate or a second element provided with a conductive plug made of a conductive material so as to be exposed to the outside of the substrate,
The first substrate, second substrate, and second element to be prepared include the electrode pad portion or the second element of the first substrate when the second substrate or the second element is arranged facing the first substrate. The conductive plug of the second substrate or the second element is designed to be located on the conductive plug,
(2) (i) Covering the electrode pad or conductive plug forming surface of the first substrate with a photosensitive insulating layer; (ii) Insulating the conductive plug forming surface of the second substrate or the second element with a photosensitive insulating layer; forming a photosensitive insulating layer on the surface by performing one or both of the following steps:
(3) The photosensitive insulating layer formed on the electrode pad or conductive plug formation surface on the first substrate and/or the conductive plug formation surface on the second substrate or the second element. forming an opening pattern on the electrode pad or the conductive plug by lithography through a mask;
(4) By adhering the second substrate or the second element to a predetermined position of the first substrate by pressure contact, the second substrate or the second element is bonded to the first substrate through the photosensitive insulating layer in which the opening pattern is formed. a step of bonding two substrates or the second element;
(5) further pressurizing the bonded first substrate and the second substrate or the second element with an additional pressure higher than that at the time of pressure contact;
(6) a step of fixing and electrically connecting the electrode pad or conductive plug of the first substrate and the conductive plug of the second substrate or the second element by a first baking; and (7) the photosensitive a step of curing the insulating layer in a second bake;
After
The method of manufacturing a semiconductor device is characterized in that the photosensitive insulating material used for forming the photosensitive insulating layer has an elastic modulus of 0.01 to 1.5 GPa at 25° C. after being exposed to light and cured.

The present invention will be described in detail below with reference to the drawings, but the present invention is not limited thereto.

[Semiconductor device]
An example of a semiconductor device manufactured according to the present invention is shown in FIGS. 1(a) and 1(b). The first substrate 3 is provided with an electrode pad 1 which is a conductive connection part so as to be exposed to the outside of the substrate (FIG. 1(a)), or a conductive pad made of a conductive material is provided so as to protrude from the electrode pad. A plug 2 is provided (FIG. 1(b)).
Further, the second substrate or second element 5 is provided with a conductive plug 4 made of a conductive material so as to be exposed to the outside of the substrate (FIGS. 1A and 1B).
A photosensitive insulating layer 7 is formed as a connection structure between the first substrate and the second substrate or the second element.

As shown in FIGS. 2(a) and 2(b), the semiconductor device according to the present invention is provided with an electrode pad 1 which is a conductive connection part or a conductive plug 2 made of a conductive material so as to protrude from the electrode pad. As shown in FIG. 3, a second substrate or a second element 5 is provided with a conductive plug 4 made of a conductive material so as to be exposed to the outside of the substrate. When the second substrate or the second element is placed facing a predetermined position of the first substrate, the second substrate or the second element is arranged so as to be located on the electrode pad portion 1 or the conductive plug 2 of the first substrate. A two-element conductive plug 4 is designed. As shown in the figure, a solder bump 6 made of a low melting point metal such as SnAg may be formed on the tip of at least one of the conductive plugs 2 or 4 by plating, ball mounting, or the like.

In such a semiconductor device, a photosensitive insulating layer made of a resist composition is formed, and a second substrate or a second element can be easily placed on the first substrate via this insulating layer. Furthermore, it is possible to easily bond substrates to each other or to bond semiconductor elements to substrates, to electrically connect conductive plugs to electrode pads, and to insulate conductive plugs from each other.

Further, at this time, if the photosensitive insulating layer is formed of a resist composition, even if the height of the first substrate and the second substrate or the second element is from several μm to several hundred μm, each Since the thickness of the photosensitive insulating layer formed on the substrate or device can be arbitrarily designed, the device can be embedded without any voids around the device.

Since it is possible to easily remove the photosensitive resin layer formed on the electrode pad or conductive plug to be connected using the lithography method described below, the size of the electrode pad and the diameter of the conductive plug are However, there are no design limitations.

Therefore, the connection structure, the semiconductor device having the connection structure, and the semiconductor element of the present invention are not subject to any design restrictions in the connection method, and the semiconductor device can be easily mounted on a wiring board or stacked with semiconductor circuits. becomes.

Further, at this time, when the photosensitive insulating layer is formed of a photocurable resin composition containing a silicone skeleton-containing polymer compound having a mass average molecular weight of 3,000 to 500,000, However, the semiconductor device has a low elastic modulus and is less warped.

Further, in the present invention, a stacked semiconductor device in which a plurality of the above-described semiconductor devices are laminated by bonding to a substrate or by being made into a flip chip can be formed.

Further, according to the present invention, it is possible to obtain a stacked semiconductor device after being placed on a wiring board and sealed.

With the connection structure of the present invention and a semiconductor device having the connection structure, since it is easy to stack semiconductor circuit layers, a stacked type having a three-dimensional stacked structure configured by stacking a plurality of such semiconductor circuit layers is used. Suitable for semiconductor devices.

[Method for manufacturing semiconductor device]
The present invention provides a method for manufacturing a semiconductor device having a three-dimensional stacked structure formed by stacking a plurality of semiconductor circuit layers, comprising:
(1) A first substrate provided with an electrode pad that is a conductive connection part exposed to the outside of the substrate or a conductive plug made of a conductive material so as to protrude from the electrode pad; A second substrate or a second element is provided with a conductive plug made of a conductive material, and when the second substrate or the second element is placed facing a predetermined position of the first substrate, the first A step of preparing a substrate or an element in which a conductive plug of a second substrate or a second element is designed to be located in an electrode pad portion of the substrate or a conductive plug, the step comprising: A solder ball may be formed at the tip of at least one of the two elements, and a substrate on which the second element is installed with a temporary adhesive may be used as the second substrate, or a solder ball may be formed on the tip of at least one of the two elements. An element formed by dividing the second substrate into pieces may be used as two elements,
(2) a step of covering the surface of the first substrate or the surface of the second substrate or the second element with a photosensitive insulating layer, or a step of covering the surfaces of both the first substrate and the second substrate with a photosensitive insulating layer;
(3) Forming an opening pattern by lithography through a mask on the electrode pad or conductive plug of the photosensitive insulating layer on the first substrate on which the photosensitive insulating layer is formed or the conductive plug forming surface. Step, forming an opening pattern by lithography through a mask on the conductive plug of the photosensitive insulating layer on the conductive plug forming surface of the second substrate on which the photosensitive insulating layer is formed, the photosensitive insulating layer is formed. This step is a step of forming an opening pattern for an electrode part in a photosensitive insulating layer, and if necessary, a process for forming an opening pattern for an electrode part in a photosensitive insulating layer, and a second board on which an element is mounted with a temporary adhesive on a second substrate on which an opening pattern for an electrode part is formed in a photosensitive insulating layer. The second element is formed by removing the element from the two substrates, or by dicing the second substrate together with the substrate to form the second element.
(4) By bonding the second substrate or the second element to the first substrate at a predetermined position of the first substrate by pressure contact, the first substrate and the second substrate are connected through the photosensitive insulating layer in which the above-mentioned opening pattern is formed. or a step of bonding the second element;
(5) Press the bonded first substrate and second substrate or second element with an additional pressure higher than that during bonding, and press the opening of the photosensitive insulating layer and the first substrate and/or second substrate or second element. a step of filling the gap between the conductive plug and the conductive plug;
(6) a step of fixing and electrically connecting the electrode pad of the first substrate and the conductive plug of the second substrate or second element by first baking;
(7) a step of curing the photosensitive insulating layer bonding between the first substrate and the second substrate or the second element in a second bake;
Provided is a method for manufacturing a semiconductor device having the following.

Each step will be explained in detail below.

[Step (1)]
In step (1), a first substrate is provided with an electrode pad, which is a conductive connection part, or a conductive plug made of a conductive material so as to protrude from the electrode pad so as to be exposed to the outside of the substrate; This is a step of preparing a second substrate or a second element provided with a conductive plug made of a conductive material so as to be exposed to the conductive plug. Here, when the second substrate or the second element is disposed facing a predetermined position of the first substrate, the second A conductive plug of the substrate or said second element is designed.

A solder ball may be formed on at least one of the conductive plugs protruding from the electrode pads of the first substrate, the second substrate, or the second element. Although the method of forming the solder ball is not limited, generally, when the conductive plug is formed by plating or filling with a conductive material, SnAg plating is subsequently performed, or a solder ball is mounted.

As the second substrate, a substrate on which the second element is installed with a temporary adhesive may be used, or an element formed by cutting the second substrate into pieces may be used as the second element.

[Step (2)]
Step (2) is a step of forming a photosensitive insulating layer.

The material used to form the photosensitive insulating layer on the surface of the first substrate, the second substrate, and the second element is not particularly limited, but for example, a chemically amplified negative resist composition described below may be used. The photosensitive insulating layer can be formed by coating or by pasting a dry film made of a negative resist composition.

At this time, a substrate on which the second element is temporarily installed with adhesive may be used as the second substrate.

As the photosensitive insulating layer, one type of organic layer selected from acrylic resin, polyimide resin, polybenzoxazole (PBO) resin, epoxy resin, and silicone resin can be used. The photosensitive insulating layer is, for example, made of the composition described below, and can be a film obtained by applying the composition onto a substrate and drying it, or a film obtained by applying the composition to a support film and drying it. It is formed by a coating obtained by applying a curable dry film to a substrate.

（式中、Ｒ^１～Ｒ^４は同一でも異なっていてもよい炭素数１～８の１価炭化水素基を示す。ｍは１～１００の整数である。ａ、ｂ、ｃ、ｄは０又は正数、且つａ、ｂ、ｃ、ｄは同時に０になることがない。但し、ａ＋ｂ＋ｃ＋ｄ＝１である。更に、Ｘは下記一般式（２）で示される有機基、Ｙは下記一般式（３）示される有機基である。）

（式中、Ｚは

のいずれかより選ばれる２価の有機基であり、ｎは０又は１である。Ｒ^５及びＲ^６はそれぞれ炭素数１～４のアルキル基又はアルコキシ基であり、相互に異なっていても同一でもよい。ｋは０、１、２のいずれかである。）

（式中、Ｖは

のいずれかより選ばれる２価の有機基であり、ｐは０又は１である。Ｒ^７及びＲ^８はそれぞれ炭素数１～４のアルキル基又はアルコキシ基であり、相互に異なっていても同一でもよい。ｈは０、１、２のいずれかである。）
（Ｂ）ホルムアルデヒド又はホルムアルデヒド－アルコールにより変性されたアミノ縮合物、１分子中に平均して２個以上のメチロール基又はアルコキシメチロール基を有するフェノール化合物から選ばれる１種又は２種以上の架橋剤、
（Ｃ）波長１９０～５００ｎｍの光によって分解し、酸を発生する光酸発生剤、
（Ｄ）エポキシ基含有架橋剤、
（Ｅ）溶剤、
を含有してなる化学増幅型ネガ型レジスト組成物材料が好適に用いられる。 Examples of the composition forming the photosensitive insulating layer include:
(A) a silicone skeleton-containing polymer compound having a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 3,000 to 500,000;

(In the formula, R ¹ to R ⁴ represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, which may be the same or different. m is an integer of 1 to 100. a, b, c, d are 0 or a positive number, and a, b, c, and d cannot be 0 at the same time.However, a+b+c+d=1.Furthermore, X is an organic group represented by the following general formula (2), and Y is the following general formula. (3) The organic group shown.)

(In the formula, Z is

is a divalent organic group selected from any of the following, and n is 0 or 1. R ⁵ and R ⁶ are each an alkyl group or an alkoxy group having 1 to 4 carbon atoms, and may be different or the same. k is 0, 1, or 2. )

(In the formula, V is

is a divalent organic group selected from any of the following, and p is 0 or 1. R ⁷ and R ⁸ are each an alkyl group or an alkoxy group having 1 to 4 carbon atoms, and may be different or the same. h is either 0, 1, or 2. )
(B) one or more crosslinking agents selected from formaldehyde or an amino condensate modified with formaldehyde-alcohol, and a phenol compound having an average of two or more methylol groups or alkoxymethylol groups in one molecule;
(C) a photoacid generator that is decomposed by light with a wavelength of 190 to 500 nm and generates acid;
(D) an epoxy group-containing crosslinking agent,
(E) solvent;
A chemically amplified negative resist composition material containing the following is suitably used.

(B) As the crosslinking agent, known ones can be used, including formaldehyde or an amino condensate modified with formaldehyde-alcohol, and an average of two or more methylol groups or alkoxymethylol in one molecule. One or more types selected from phenol compounds having a group (alkoxymethyl group) can be used.

Such amino condensates modified with formaldehyde or formaldehyde-alcohol include, for example, melamine condensates modified with formaldehyde or formaldehyde-alcohol, or urea condensates modified with formaldehyde or formaldehyde-alcohol.
Note that these modified melamine condensates and modified urea condensates may be used alone or in combination of two or more.

In addition, examples of phenolic compounds having an average of two or more methylol groups or alkoxymethylol groups in one molecule include (2-hydroxy-5-methyl)-1,3-benzenedimethanol, 2,2', Examples include 6,6'-tetramethoxymethylbisphenol A and the like.
In addition, these phenol compounds can also be used singly or in combination of two or more.

(C) As the photoacid generator, one that generates an acid upon irradiation with light with a wavelength of 190 to 500 nm, and this acts as a curing catalyst, can be used.

Such photoacid generators include onium salts, diazomethane derivatives, glyoxime derivatives, β-ketosulfone derivatives, disulfone derivatives, nitrobenzylsulfonate derivatives, sulfonic acid ester derivatives, imido-yl-sulfonate derivatives, oxime sulfonate derivatives, and iminosulfonates. derivatives, triazine derivatives and the like.

(D) The epoxy group-containing crosslinking agent is not particularly limited, but may contain an epoxy compound having an average of two or more epoxy groups in one molecule.

Examples of the crosslinking agent include bisphenol type epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin, novolac type epoxy resins such as phenol novolac type epoxy resin, cresol novolac type epoxy resin, and triphenol alkane type epoxy resin. and polymers thereof, biphenyl-type epoxy resins, dicyclopentadiene-modified phenol novolak-type epoxy resins, phenol aralkyl-type epoxy resins, biphenylaralkyl-type epoxy resins, naphthalene ring-containing epoxy resins, glycidyl ester-type epoxy resins, alicyclic epoxy resins, Examples include heterocyclic epoxy resins. Among the above crosslinking agents, bisphenol type epoxy resins and novolak type epoxy resins are preferably used. The above-mentioned crosslinking agents can be used alone or in combination of two or more.

(E) As the solvent, it is possible to use a solvent that can dissolve (A) the silicone skeleton-containing polymer compound, (B) the crosslinking agent, (C) the photoacid generator, and (D) the epoxy group-containing crosslinking agent. can.

Examples of such solvents include ketones such as cyclohexanone, cyclopentanone, and methyl-2-n-amylketone; 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and -Alcohols such as ethoxy-2-propanol; ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether; propylene glycol monomethyl ether acetate, Propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, propylene glycol mono-tert-butyl ether Examples include esters such as acetate and γ-butyrolactone.

A chemically amplified negative resist composition for forming a photosensitive insulating layer is prepared by a conventional method. A chemically amplified negative resist composition forming a photosensitive insulating layer can be prepared by stirring and mixing the above-mentioned components and then filtering the solid content using a filter or the like as necessary.

The chemically amplified negative resist can be applied using a known lithography technique. For example, the coating can be performed by a dipping method, a spin coating method, a roll coating method, or the like. The coating amount can be appropriately selected depending on the purpose, but it is the coating amount that forms a photocurable resin layer having a film thickness of 0.1 to 200 μm, preferably 1 to 50 μm. For the purpose of improving film thickness uniformity on the substrate surface, a solvent may be dropped onto the substrate before applying the photocurable resin composition (pre-wet method). The solvent and amount to be dropped can be appropriately selected depending on the purpose, but organic solvents used as the solvent, such as alcohols such as isopropyl alcohol (IPA), ketones such as cyclohexanone, and propylene glycol monomethyl Glycols such as ethers are preferred, but it is also possible to use solvents used in photocurable resin compositions.

Here, in order to carry out the photocuring reaction efficiently, the solvent and the like may be volatilized in advance by preheating (prebaking: PB) as necessary. Preheating can be performed, for example, at 40 to 140° C. for about 1 minute to 1 hour.

The support film used in the photosensitive insulating dry film that can be used in the method for manufacturing a semiconductor device of the present invention may be a single film or a multilayer film formed by laminating a plurality of polymer films. Examples of the material include synthetic resin films such as polyethylene, polypropylene, polycarbonate, and polyethylene terephthalate, with polyethylene terephthalate having appropriate flexibility, mechanical strength, and heat resistance being preferred. Further, these films may be subjected to various treatments such as corona treatment or coating with a release agent. These can be commercially available products, such as Therapel WZ (RX), Therapel BX8 (R) (manufactured by Toray Film Kako Co., Ltd.), E7302, E7304 (manufactured by Toyobo Co., Ltd.), and Examples include Rex G31, Purex G71T1 (manufactured by Teijin DuPont Films Ltd.), PET38X1-A3, PET38X1-V8, and PET38X1-X08 (manufactured by Nipper Co., Ltd.).

The protective film used in the photosensitive insulating dry film may be the same as the support film described above, but polyethylene terephthalate and polyethylene having appropriate flexibility are preferred. Commercially available products can be used for these, and examples of polyethylene terephthalate include those already listed, and examples of polyethylene include GF-8 (manufactured by Tamapoly Co., Ltd.) and PE film type 0 (manufactured by Nipper Co., Ltd.). .

The thickness of the supporting film and the protective film is preferably 10 to 300 μm from the viewpoints of stability in producing a photocurable dry film and prevention of curling on the winding core, so-called curling.

Next, a method for manufacturing the photosensitive insulating dry film will be described. The above photosensitive insulating dry film manufacturing apparatus can be a film coater generally used for manufacturing adhesive products. Examples of the film coater include a comma coater, a comma reverse coater, a multi-coater, a die coater, a lip coater, a lip reverse coater, a direct gravure coater, an offset gravure coater, a 3-bottom reverse coater, a 4-bottom reverse coater, etc. It will be done.

When the support film is unwound from the unwinding shaft of the film coater and passed through the coater head of the film coater, the resist composition material is coated on the support film to a predetermined thickness to form a photosensitive insulating layer, and then heated with hot air. The photosensitive insulating layer dried on the support film through a circulation oven is passed through a laminating roll under pressure, together with a protective film unwound from another unwinding shaft of the film coater, to dry the photosensitive insulating layer on the support film. The film is manufactured by bonding the film to a conductive insulating layer and then winding it up on a winding shaft of a film coater. In this case, the temperature of the hot air circulation oven is preferably 25 to 150°C, the passing time is preferably 1 to 100 minutes, and the pressure of the laminating roll is preferably 0.01 to 5 MPa.

Further, the thickness of the photocurable resin layer of the photosensitive insulating dry film may be 10 to 300 μm, preferably 10 to 150 μm.

In forming a photosensitive insulating layer using a photosensitive insulating dry film, the photosensitive insulating layer is formed by laminating the photosensitive insulating layer of the photosensitive insulating dry film so as to cover a substrate or an element having an electrode pad or a conductive plug. do.

First, the protective film is peeled off from the above-mentioned photosensitive insulating dry film, and a photosensitive film is applied onto the first substrate 3 or second substrate or second element 5 as shown in FIGS. 4(a), (b), and (c). The photosensitive insulating layer of the insulating dry film is laminated to form the photosensitive insulating layer 7.

A vacuum laminator is preferable as a device for pasting a photosensitive insulating dry film onto a substrate or an element. The photosensitive insulating dry film is attached to a film pasting device, the protective film of the photosensitive insulating dry film is peeled off, and the exposed photosensitive insulating layer is placed in a vacuum chamber with a predetermined degree of vacuum using a pasting roll with a predetermined pressure. and place it in close contact with the substrate on a table at a predetermined temperature. Note that the degree of vacuum of the vacuum chamber is preferably 50 to 500 Pa, the pressure of the pasting roll is preferably 0 to 5.0 MPa, and the temperature of the table is preferably 60 to 120°C. Performing vacuum lamination in this manner is preferable because it prevents the generation of voids around the electrode pads and conductive plugs on the semiconductor substrate and elements.

Here, the purpose is to efficiently perform a photocuring reaction of the photosensitive insulating layer, to improve the adhesion between the photosensitive insulating layer and the substrate or element, or to improve the flatness of the photosensitive insulating layer that is in close contact with the layer. Preheating (pre-baking: PB) may be performed as necessary. Prebaking can be performed, for example, at 40 to 140°C for about 1 minute to 1 hour.

In addition, by adjusting the coating thickness or dry film thickness of the photosensitive insulating layer depending on the gap after electrical connection between the first substrate and the second substrate or the second element, the following (4) adhesion process can be performed. and (5) in the pressurizing step, the conductive plug can be embedded between the substrates or between the substrate and the element, and between the photosensitive resin layer opening and the conductive plug without any gaps.

Note that, although the case where a chemically amplified negative resist composition is used has been mainly described above, the present invention is not limited to this embodiment.

[Step (3)]
Next, in step (3), the photosensitive insulating layer formed in step (2) is patterned by lithography using a mask, as shown in FIGS. 5(a), (b), and (c). This is a step of forming an opening pattern 8 on the electrode pad and an opening pattern 9 on the conductive plug.

In this patterning, after forming a photosensitive insulating layer, it is exposed to light, subjected to post-exposure heat treatment (post-exposure bake: PEB), and developed. That is, the pattern can be formed using a known lithography technique.

The photosensitive resin layer formed in step (2) is cured by exposing it to light with a wavelength of 190 to 500 nm through a photomask. The photomask may be one in which a desired pattern is hollowed out, for example. The material of the photomask is preferably one that blocks light with a wavelength of 190 to 500 nm, such as chromium, but is not limited thereto.

Examples of light with a wavelength of 190 to 500 nm include light of various wavelengths generated by a radiation generating device, such as ultraviolet light such as g-line and i-line, deep ultraviolet light (248 nm, 193 nm), and the like. The wavelength is preferably 248 to 436 nm. The exposure amount is preferably 10 to 3,000 mJ/cm ² , for example. By exposing in this manner, the exposed portions are crosslinked to form a pattern that is insoluble in the developer described below.

Furthermore, PEB can be performed to increase development sensitivity. PEB can be performed, for example, at 40-140° C. for 0.5-10 minutes.

After that, it is developed with a developer. Preferred developing solutions include organic solvents such as IPA and PGMEA. Further, a preferred alkaline aqueous developer is a 2.38% tetramethylhydroxyammonium (TMAH) aqueous solution. In the method for manufacturing a semiconductor device of the present invention, an organic solvent is preferably used as the developer.

Development can be carried out by a conventional method, for example, by immersing the patterned substrate in a developer. Thereafter, washing, rinsing, drying, etc. are performed as necessary, and a photosensitive insulating layer film having a desired pattern is obtained.

Further, the second substrate or the second element on which the film is formed can also be diced into individual pieces by dicing or the like.

Furthermore, dicing a semiconductor device in which a first substrate or a second substrate, a second element, and a photocurable resin layer are formed into individual pieces is a very rational method for forming semiconductor devices. , embodying the objectives of the invention.

[Step (4)]
Subsequently, in step (4), a second substrate or a second element is bonded to the first substrate at a predetermined position of the first substrate by pressure bonding, so that the first substrate is bonded to the first substrate through the photosensitive insulating layer in which the opening pattern is formed. This is a step of bonding the substrate and the second substrate or second element. The photosensitive insulating layer of the present invention is a substrate adhesive, which under suitable conditions of heat and pressure forms a connection structure between two substrates or between a substrate and a device. It can be used as an adhesive for bonding a first substrate coated with a chemically amplified negative resist composition to a second substrate or a second element. As for the bonding conditions, it is preferable that the specific heating temperature is 50 to 200° C., the bonding pressure is 0.01 to 10 MPa, and the duration is 1 to 60 minutes.

As the bonding device, a wafer bonder device can be used to bond wafers together under reduced pressure while applying a load, or a flip chip bonder device can be used to perform chip-to-wafer or chip-to-chip bonding. The bonding strength of the adhesive layer formed between the substrates is increased by the post-curing treatment described below, and it becomes a permanent adhesive, playing the same role as an underfill.

Regarding the first substrate or the second substrate or the second element on which the photosensitive insulating layer is formed, the second substrate or the second element is placed opposite to the first substrate, and the second substrate or the second element is bonded by thermocompression. and insulate between the electrodes.

[Step (5)]
Subsequently, in step (5), an additional pressure (for example, 0.01 to 10 MPa) higher than the pressure (for example, 0.01 to 10 MPa) for bonding the first substrate and the second substrate or second element bonded via the photosensitive insulating layer is applied. In this step, the gap between the opening in the photosensitive insulating layer and the conductive plug is filled by further applying pressure (1 MPa to 30 MPa) to deform the photosensitive insulating layer. When a wafer bonder device is used as the bonding device, when the aforementioned wafers are bonded together, or when a flip chip bonder device is used to bond the first substrate and the second element, the substrate is bonded through the photosensitive insulating layer. Pressure (for example, 0.1 MPa to 30 MPa) may be applied after adhering the chips. At this time, heating may or may not be performed, but it is desirable to apply a temperature at which the melt viscosity of the photosensitive resin layer becomes minimal.

In the present invention, when bonding the first substrate and the second substrate or the second element using the photosensitive insulating layer, the pressure bonding process is performed in two stages. That is, it is characterized in that pressure is applied twice.

In the process of forming the photosensitive insulating layer, unnecessary insulating layers are removed by patterning, but the diameter of the insulating layer removed to ensure electrical connection is either the same diameter as the conductive plug diameter or larger than the conductive plug diameter. Greatly designed. When adhering the first substrate and the second substrate or the second element by pressure contact, bump connection and fixing of the semiconductor element are performed, but a gap is created around the conductive plug due to the large removed diameter of the insulating layer. When the distance between the bumps becomes narrower, the ratio of voids to the photosensitive insulating layer between the bumps increases, which may affect insulation performance. Therefore, after bonding by pressure welding, by further pressurizing the bonded first substrate and second substrate or second element with an additional pressure higher than that of bonding, the conductive plug can be bonded to the first substrate by the method described above. The gap between the opening pattern and the opening pattern formed in the photosensitive insulating layer can be filled with the photosensitive insulating layer.

The pressure applied after bonding the first substrate and second substrate or second element bonded via the photosensitive insulating layer is higher than the pressure applied during bonding. If the load pressure is the same as or lower than the bonding pressure, the photosensitive insulating layer existing between the bonded first substrate and second substrate or second element is insufficiently deformed, and the photosensitive insulating layer is The gap between the opening and the conductive plug cannot be completely filled. A gap remains around the conductive plugs, and a region where no photosensitive insulating layer is present is generated, resulting in a decrease in insulation performance between the conductive plugs.

Steps (4) and (5) of the above steps may be performed continuously.

The above steps (4) and (5) will be explained using FIG. 6. A first substrate or a second substrate on which an opening pattern is formed as described above, and a second element are prepared (FIGS. 6(a) and 6(b)). Subsequently, the second substrate or the second element is bonded by pressure to the first substrate placed facing each other at a predetermined position, so that the first substrate and the second substrate or The second element is bonded (FIG. 6(c)). Subsequently, the first substrate and the second substrate or the second element, which are bonded via the photosensitive insulating layer, are further pressurized as described above to deform the photosensitive insulating layer, thereby forming an opening in the photosensitive insulating layer and a conductive layer. 6(d)).

[Step (6)]
Next, in step (6), in order to electrically connect, for example, the first substrate and the second substrate or the second element bonded via the photosensitive insulating layer are further heated at a bump temperature (180 to 300°C). This is a process of heating and bump connection. At this time, pressure may be applied. When a flip chip bonder device is used to bond the first substrate and the second element, the bonding may be performed subsequent to bonding the substrate and the chip via the photosensitive insulating layer.

The method of bonding the first substrate and the second substrate or the second element by pressure bonding can be carried out in two steps: a process of bonding the substrate and the element, and a process of electrical connection.

Furthermore, crimping may be performed the first time at a temperature lower than the bump connection temperature, and second time crimping may be performed at the bump connection temperature. Specifically, it is preferable that the first temperature is 50 to 180°C, the second temperature is 180 to 300°C, and the heat treatment is performed for a short time with a temperature difference of at least 40°C.

As the bonding device, a wafer bonder device can be used to bond wafers together under reduced pressure while applying a load, or a flip chip bonder device can be used to perform chip-to-wafer or chip-to-chip bonding.

[Step (7)]
Subsequently, step (7) is a step in which the bonded substrate after the opening pattern is formed is post-cured at a temperature of 100 to 250° C., preferably 150 to 220° C., using an oven or a hot plate. Note that if the post-curing temperature is 100 to 250°C, the crosslinking density of the photosensitive insulating layer can be increased and remaining volatile components can be removed, improving adhesion to the substrate, heat resistance and strength, as well as electrical insulation and adhesive strength. Preferable from this point of view. The bonded substrate is subjected to the above-mentioned post-curing treatment to increase the crosslinking density of the resin film, thereby increasing the adhesive strength of the resin film. Note that the crosslinking reaction in the present invention does not cause side reactions accompanied by outgassing, and therefore does not induce bonding defects (voids), especially when used as a substrate adhesive. The post-curing time can be between 10 minutes and 10 hours, especially between 10 minutes and 3 hours.

In particular, in the photosensitive insulating layer made of the chemically amplified negative resist composition material containing a silicone skeleton-containing polymer compound of the present invention, the photocurable resin composition generates side reaction gas during photocrosslinking reaction and thermal crosslinking reaction. Therefore, it does not induce bonding defects in substrate bonding applications. Furthermore, since the photocurable resin composition of the present invention has high transparency in the exposure wavelength region, even when the photocurable resin layer on the substrate becomes thick, the resin layer itself has little light absorption and high It is possible to form an aperture pattern with high sensitivity.

The photocurable resin composition or photocurable dry film of the present invention can be applied to substrates used in electronic components, semiconductor elements, and circuit boards by performing a heat treatment at a low temperature of 250°C or less after forming an aperture pattern with light. It has excellent adhesion, mechanical properties, and electrical insulation, and is highly reliable as an insulating protective film. Furthermore, it can prevent cracks in the protective film, so it can be used for various electrical and electrical applications such as circuit boards, semiconductor elements, display elements, etc. Suitable for use in forming protective films for electronic components. Furthermore, a film that is excellent as a substrate adhesive material can be easily formed. In particular, due to its heat resistance, insulating properties, and flexibility, this film is an insulating film for semiconductor elements including rewiring, an insulating film for multilayer printed circuit boards, and an insulating film for through electrodes of silicone substrate through wiring (TSV). It can be used as a coverlay film, and because it has adhesive properties, it can be used in semiconductor device manufacturing applications that involve substrate bonding or chip stacking processes, including electrical connection of conductive plugs. .

The formed photosensitive insulating cured layer becomes a permanent adhesive, and serves as an insulator for the conductive plug and fixation between the substrates or between the substrate and the chip without using an underfill.

Further, the elastic modulus (25° C.) of the chemically amplified negative resist composition material used for forming the photosensitive insulating cured layer after exposure and curing is 0.01 to 1.5 GPa, and 0.01 It is preferably from 1.0 GPa to 1.0 GPa, particularly preferably from 0.05 to 1.0 GPa.

A semiconductor device and a semiconductor element having a connection structure including a photosensitive insulating layer can be manufactured by the method described above, and warpage can be reduced by using such a photosensitive insulating layer.

If the elastic modulus exceeds 1.5 GPa, irregularities on the substrate surface cannot be sufficiently absorbed when bonding the substrate after pattern formation by lithography, and voids are likely to occur. If the elastic modulus is less than 0.01 GPa, warping becomes large. When bonding substrates together or dividing a chip stack into individual pieces, cracks and chips are likely to occur during cutting due to the large hardness difference between the substrate and the substrate.

It has the above connection structure, the photosensitive insulating layer remains as an insulating layer between the first substrate and the second substrate or the second element, and the gap between the opening of the photosensitive insulating layer and the conductive plug. Semiconductor devices and semiconductor elements that do not have this can be suitably used for fan-out wiring applied to semiconductor chips and for WCSP (wafer level chip size packaging).

As described above, with the method for manufacturing a semiconductor device having a connection structure of the present invention, even when fine electrodes are formed on a semiconductor element, it is possible to easily mount the semiconductor device on a wiring board and stack the semiconductor device. Electrical connection processing between the electrode pad portion and the conductive plug can be easily performed. In addition, by using the photosensitive insulating layer as described above, warping can be reduced, and it is possible to reduce warpage not only around the semiconductor element but also without using underfill, regardless of the height of the semiconductor element and the density of the conductive plugs. It is possible to manufacture a semiconductor device in which the conductive plug is embedded without any voids around it, ensuring sufficient insulation.

Furthermore, since the semiconductor device of the present invention obtained in this manner is easy to place on a wiring board and to stack semiconductor devices, it is possible to use a stacked semiconductor device in which semiconductor devices are stacked or a stacked semiconductor device in which semiconductor devices are stacked, and a stacked semiconductor device in which semiconductor devices are stacked. After sealing, a stacked semiconductor device can be obtained.

Hereinafter, the present invention will be specifically explained by showing synthesis examples and examples, but the present invention is not limited to the following examples.

[Silicone skeleton-containing polymer compound]
First, the chemical structural formulas of compounds (M-1) to (M-5) used in the synthesis examples of the present invention are shown below.

[Synthesis example 1]
After dissolving 396.9 g of compound (M-1) and 45.0 g of compound (M-2) in 1875 g of toluene in a 5 L flask equipped with a stirrer, thermometer, nitrogen purging device, and reflux condenser, compound (M- 3) 949.6 g and 6.1 g of compound (M-4) were added, and the mixture was heated to 60°C. After that, 2.2 g of carbon-supported platinum catalyst (5% by mass) was added, and after confirming that the internal reaction temperature rose to 65-67°C, the temperature was further heated to 90°C for 3 hours, and then 60°C again. 2.2 g of carbon-supported platinum catalyst (5% by mass) was added, and 107.3 g of compound (M-5) was added dropwise into the flask over 1 hour. At this time, the temperature inside the flask rose to 78°C. After completion of the dropwise addition, the mixture was further aged at 90° C. for 3 hours, cooled to room temperature, 1700 g of methyl isobutyl ketone was added, and the platinum catalyst was removed by filtering the reaction solution under pressure using a filter. Furthermore, 760 g of pure water was added to the obtained polymer compound solution, and the mixture was stirred and allowed to stand still for liquid separation to remove the lower aqueous layer. This liquid separation and water washing operation was repeated six times to remove trace amounts of acid components in the polymer compound solution. The solvent in this polymer compound solution was distilled off under reduced pressure, and 950 g of cyclopentanone was added to obtain a polymer compound solution (A-1) containing cyclopentanone as the main solvent and having a solid content concentration of 60% by mass. Ta. When the molecular weight of the polymer compound in this polymer compound solution was measured by GPC, the weight average molecular weight was 62,000 in terms of polystyrene, and (c+d)/(a+b+c+d) in general formula (1) was 0.10.

[Synthesis example 2]
After dissolving 441.0 g of compound (M-1) in 1875 g of toluene in a 5 L flask equipped with a stirrer, thermometer, nitrogen purging device, and reflux condenser, 949.6 g of compound (M-3) and compound (M- 4) 6.1 g was added and heated to 60°C. After that, 2.2 g of carbon-supported platinum catalyst (5% by mass) was added, and after confirming that the internal reaction temperature rose to 65-67°C, the temperature was further heated to 90°C for 3 hours, and then 60°C again. 2.2 g of carbon-supported platinum catalyst (5% by mass) was added, and 107.3 g of compound (M-5) was added dropwise into the flask over 1 hour. At this time, the temperature inside the flask rose to 78°C. After completion of the dropwise addition, the mixture was further aged at 90° C. for 5 hours, cooled to room temperature, 1700 g of methyl isobutyl ketone was added, and the platinum catalyst was removed by filtering the reaction solution under pressure using a filter. Furthermore, 760 g of pure water was added to the obtained polymer compound solution, and the mixture was stirred and allowed to stand still for liquid separation to remove the lower aqueous layer. This liquid separation and water washing operation was repeated six times to remove trace amounts of acid components in the polymer compound solution. The solvent in this polymer compound solution was distilled off under reduced pressure, and 950 g of cyclopentanone was added to obtain a polymer compound solution (A-2) containing cyclopentanone as the main solvent and having a solid content concentration of 60% by mass. Ta. When the molecular weight of the polymer compound in this polymer compound solution was measured by GPC, the weight average molecular weight was 51,000 in terms of polystyrene, and (c+d)/(a+b+c+d) in general formula (1) was 0.

（ＰＡＧ－２）

（ＰＡＧ－３）

[Photoacid generator]
The photoacid generators used in the formulation examples of the present invention and listed in Table 1 are as follows.
(PAG-1)

(PAG-2)

(PAG-3)

[Crosslinking agent and epoxy group-containing crosslinking agent]
Further, the crosslinking agents and epoxy group-containing crosslinking agents used in the formulation examples of the present invention and listed in Table 1 below are as follows.

[Crosslinking agent]
Alkylated melamine resin, H-1 (manufactured by Sanwa Chemical Co., Ltd.)

（ＥＰ－２）

[Epoxy group-containing crosslinking agent]
(EP-1)

(EP-2)

Then, according to the amounts listed in Table 1, a silicone skeleton-containing polymer compound, a crosslinking agent, a photoacid generator, an epoxy group-containing crosslinking agent, and a solvent are blended, and then stirred, mixed, and dissolved at room temperature. Precision filtration was performed using a 1.0 μm filter made of Teflon (registered trademark) to obtain photocurable resin compositions consisting of Formulation Examples 1 to 4.

[Modulus after curing]
A photocurable dry film with a photocurable resin layer having a thickness of 200 μm was produced according to the production of a photocurable dry film described below. The photocurable dry film was exposed to light without using a photomask, and was finally cured by heating at 180° C. for 2 hours in an oven under an inert gas. The cured film was measured in a temperature range of 0 to 350°C using a viscoelasticity measuring device (DMA) in accordance with the method shown in JIS standard K7244, and the value at 25°C was taken as the elastic modulus after curing.
The elastic moduli after curing of the photocurable resin compositions of Formulation Examples 1 to 4 are listed in accordance with Table 1.

[Preparation of photocurable dry film]
Using a die coater as a film coater and a polyethylene terephthalate film (thickness: 38 μm) as a support film, the photocurable resin composition formulation example 1 was applied onto the support film. Next, a photocurable resin layer was formed on the support film by passing it through a hot air circulation oven (length 4 m) set at 100° C. for 5 minutes. The thickness of the photocurable resin layer was 100 μm. A polyethylene film (thickness: 50 μm) was used as a protective film over the photocurable resin layer, and the protective film and a laminate roll were bonded together under a pressure of 1 MPa to produce a photocurable dry film. Note that for photocurable resin composition formulation examples 2 to 4, photocurable dry films were also produced in the same manner as photocurable resin composition formulation example 1.

[Method for forming conductive plug of second substrate]
As the second substrate, a conductive substrate or a substrate on which a conductive film was formed by sputtering or the like was used.
The conductive plug forming surface of the substrate is covered with a photosensitive resin layer. The thickness of the photosensitive resin layer is preferably greater than the height of the conductive plug to be formed. The photosensitive resin layer used here is a photosensitive resin that is a resist material.
The photosensitive resin layer is exposed through a photomask having a pattern that exposes the conductive plug formation area, and an alkaline aqueous solution is sprayed to develop and remove the exposed area, resulting in a photosensitive resin in which the conductive plug formation area is depressed. A membrane was obtained.
Residue at the bottom of the sinkhole was removed by O ₂ ashing, and a conductive plug of a specified height was formed by plating. Copper plating is generally used to form the conductive plug, but there is no particular restriction as long as it is a conductive material.

For example, solder having a melting point of 200° C. or higher is provided at the tip of the conductive plug formed on the second substrate or at the electrode pad portion of the first substrate in order to establish an electrical connection between both substrates. The solder constituting this electrical bond is, for example, an alloy of lead (Pb) and tin (Sn), an alloy of lead and silver (Ag), or an alloy of lead and tin with antimony (Sb) added. It consists of

There are no particular restrictions on the method of forming solder on the tip of the conductive plug formed on the second substrate or on the electrode pad portion of the first substrate, but plating may be performed following the conductive plug formation by plating or the electrode pad formation step. It can be formed by Further, a nickel (Ni) layer may be sandwiched between the conductive plug or electrode pad and the solder.

After forming the conductive plug, the photosensitive resin layer is removed to obtain a second substrate having the conductive plug.

Further, by dividing the second substrate obtained by the above method into pieces by dicing, a second element having a conductive plug can be obtained.

[Example 1]
The first substrate has an electrode pad with a diameter of 20 μm and a height of 4 μm, which is a conductive connection portion, and a 15 μm diameter and 5 μm high electrode pad protruding from the substrate, and the tip is plated with 1 μm thick SnAg. A second substrate with conductive plugs was used. The conductive plug on the second substrate is designed to be located at the electrode pad portion of the first substrate when placed facing a predetermined position on the first substrate.

The photocurable resin composition solution of Formulation Example 1 was coated onto a first substrate having a diameter of 8 inches using a spin coater so as to have a film thickness of 9.5 μm. In order to remove the solvent, prebaking was performed at 130° C. for 2 minutes using a hot plate, and then exposure was performed through a quartz mask designed to shield the electrode pad portion from light. The exposure device used was a contact aligner type exposure device manufactured by SUSS Microtech. After irradiation, PEB was performed at 130° C. for 3 minutes using a hot plate and then cooled. Thereafter, after the coating, the first substrate was spray developed using 2-propanol for 5 minutes to form a photocurable resin film having an opening pattern in the electrode pad portion on the first substrate.

A substrate on which conductive plugs are formed by the method described above is used as the second substrate.
The first substrate after development and the second substrate with conductive plugs are aligned, the electrode pads and the conductive plugs are connected, and a pressure of 10 kN is applied for 5 minutes while heating to 160°C. The first substrate and the second substrate were bonded together via a curable resin film. A wafer bonder manufactured by EV Group was used to bond the substrates. Subsequently, while maintaining the temperature at 160° C., a pressure of 20 kN was applied for 5 minutes to deform the photocurable resin layer and fill the voids around the conductive plug. Further, heating was performed at 260° C. for 30 seconds to melt the SnAg at the tip of the conductive plug, thereby establishing an electrical connection between the conductive plug and the electrode pad portion.

Further, final curing was performed by heating at 180° C. for 2 hours in an oven under an inert gas.

The adhesion between the first and second substrates was determined by a stud-pull adhesion test after curing, and the electrical connection was also good by a conductivity confirmation test using a tester. It was confirmed that the voids in the photosensitive insulating layer around the photosensitive plug had disappeared.

The adhesion test method using the stud pull described above is described in Surface Technology Vol. 58 No. The method described in 5 2007 was followed.

In the conductivity confirmation test, a tester terminal was brought into contact with two test terminals designed in advance on the board, and it was confirmed that there was current continuity between the two points.

X-ray observation and ultrasonic flaw detection were conducted in accordance with the methods used in non-destructive internal analysis of semiconductor packages.
Below, each test was conducted according to these methods.

[Example 2]
A first substrate has an electrode pad with a diameter of 100 μm and a height of 4 μm, which is a conductive connection part, and a 60 μm diameter and 40 μm high electrode pad protruding from the substrate, and the tip is plated with SnAg with a thickness of 3 μm. A second substrate with conductive plugs was used. The conductive plug of the second substrate is designed to be located at the electrode pad portion of the first substrate when placed at a predetermined position above the first substrate.

The protective film of the photocurable dry film with a resin thickness of 45 μm prepared using the photocurable resin composition of Formulation Example 2 was peeled off, and the inside of the vacuum chamber was evacuated using a vacuum laminator TEAM-100RF (manufactured by Takatori Co., Ltd.). The temperature was set at 80 Pa, and the photocurable resin layer on the support film was brought into close contact with a second substrate having a diameter of 8 inches. The temperature condition was 110°C. After returning to normal pressure, the substrate was taken out from the vacuum laminator and the support film was peeled off. Next, in order to improve adhesion to the substrate, prebaking was performed at 130° C. for 5 minutes using a hot plate. The obtained photocurable resin layer was exposed using a contact aligner type exposure device in the same manner as above. After light irradiation, PEB was performed on a hot plate for 5 minutes at 130°C, then cooled, and the above substrate was paddled with PGMEA 6 times for 50 seconds, and then spray developed with IPA for 1 minute to form the conductive plug portion. A photocurable resin film having an opening pattern was formed on the second substrate.

Align the first substrate and the second substrate after development, place them so that the electrode pads and conductive plugs are connected, and apply a pressure of 10 kN for 5 minutes while heating to 160°C to form a photocurable resin film. The first substrate and the second substrate were bonded together through the adhesive. A wafer bonder manufactured by EV Group was used to bond the substrates. Subsequently, while maintaining the temperature at 160° C., a pressure of 40 kN was applied for 5 minutes to deform the photocurable resin layer and fill the voids around the conductive plug. Further, heating was performed at 260° C. for 30 seconds to melt the SnAg at the tip of the conductive plug, thereby establishing an electrical connection between the conductive plug and the electrode pad portion. Final curing was then carried out by heating at 180° C. for 2 hours in an oven under inert gas.

The adhesion between the first and second substrates was determined by a stud-pull adhesion test after curing, and the electrical connection was also good by a conductivity confirmation test using a tester. It was confirmed that the voids in the photosensitive insulating layer around the photosensitive plug had disappeared.

[Example 3]
The first substrate has an electrode pad with a diameter of 15 μm and a height of 4 μm, which is a conductive connection part, and a 10 μm diameter and 3 μm high electrode pad protruding from the substrate, and the tip is plated with 1 μm thick SnAg. A second element with a conductive plug was used. The conductive plug of the second element is designed to be located at the electrode pad portion of the first substrate when placed at a predetermined position above the first substrate.

The photocurable resin composition solution of Formulation Example 3 was coated onto a first substrate having a diameter of 8 inches using a spin coater so as to have a film thickness of 7.5 μm. In order to remove the solvent, prebaking was performed at 130° C. for 2 minutes using a hot plate, and then exposure was performed through a quartz mask designed to shield the electrode pad portion from light. The exposure device used was a contact aligner type exposure device manufactured by SUSS Microtech. After irradiation, PEB was performed at 130° C. for 3 minutes using a hot plate and then cooled. Thereafter, after the coating, the first substrate was spray developed using 2-propanol for 5 minutes to form a photocurable resin film having an opening pattern in the electrode pad portion on the first substrate.

The second element is an element obtained by cutting the second substrate into pieces. The conductive plug of the second element was aligned with the electrode pad on the first substrate, and they were pressed together at 160° C. and 3 N for 5 seconds to connect the electrode pad and the conductive plug. Subsequently, pressure contact was performed for 15 seconds while heating to 160° C. to bond the second element and the first substrate via the photocurable resin film. Further, while maintaining the temperature at 160° C., a pressure of 15 N was applied for 1 minute to deform the photocurable resin layer and fill the voids around the conductive plug. Further, heating was performed at 260° C. for 30 seconds to melt the SnAg at the tip of the conductive plug, thereby establishing an electrical connection between the conductive plug and the electrode pad portion. Final curing was then carried out by heating at 180° C. for 2 hours in an oven under inert gas.

The adhesion between the first and second substrates was determined by a stud-pull adhesion test after curing, and the electrical connection was also good by a conductivity confirmation test using a tester. It was confirmed that the voids in the photosensitive insulating layer around the photosensitive plug had disappeared.

[Example 4]
Using a spin coater, a photocurable resin composition solution consisting of Formulation Example 2 was applied to a first substrate with a diameter of 8 inches having an electrode pad of 20 μm in diameter and 4 μm in height, which is a conductive connection part, to a film thickness of 6 μm. I applied it to make it look like this. In order to remove the solvent, prebaking was performed at 130° C. for 2 minutes using a hot plate, and then exposure was performed through a quartz mask designed to shield the electrode pad portion from light. The exposure device used was a contact aligner type exposure device manufactured by SUSS Microtech. After irradiation, PEB was performed at 130° C. for 3 minutes using a hot plate and then cooled. Thereafter, after the coating, the first substrate was spray developed using 2-propanol for 5 minutes to form a photocurable resin film having an opening pattern in the electrode pad portion on the first substrate.

The second substrate is an 8 inch diameter substrate with a conductive plug 15 μm in diameter and 6.5 μm in height. The photocurable resin composition solution of Formulation Example 2 was applied to the second substrate on which the conductive plugs were formed using a spin coater so that the film thickness was 4 μm. In order to remove the solvent, prebaking was performed at 130° C. for 2 minutes using a hot plate, and then exposure was performed through a quartz mask designed to shield the electrode pad portion from light. The exposure device used was a contact aligner type exposure device manufactured by SUSS Microtech. After irradiation, PEB was performed at 130° C. for 3 minutes using a hot plate and then cooled. Thereafter, after the above application, the second substrate was spray developed using 2-propanol for 5 minutes to form a photocurable resin film having an opening pattern in the conductive plug portion on the second substrate.

Align the first and second substrates, place them so that the electrode pads and conductive plugs are connected, and apply a pressure of 10 kN for 5 minutes while heating to 160°C to connect the first and second substrates through the photocurable resin film. The first and second substrates were bonded together. A wafer bonder manufactured by EV Group was used to bond the substrates. Subsequently, while maintaining the temperature at 160° C., a pressure of 40 kN was applied for 5 minutes to deform the photocurable resin layer and fill the voids around the conductive plug. Further, heating was performed at 260° C. for 30 seconds to melt the SnAg at the tip of the conductive plug, thereby establishing an electrical connection between the conductive plug and the electrode pad portion. Further, final curing was performed by heating at 180° C. for 2 hours in an oven under an inert gas.

The adhesion between the first and second substrates was determined by a stud-pull adhesion test after curing, and the electrical connection was also good by a conductivity confirmation test using a tester. It was confirmed that the voids in the photosensitive insulating layer around the photosensitive plug had disappeared.

[Comparative example]
The first substrate has an electrode pad with a diameter of 20 μm and a height of 4 μm, which is a conductive connection portion, and a 15 μm diameter and 5 μm high electrode pad protruding from the substrate, and the tip is plated with 1 μm thick SnAg. A second substrate with conductive plugs was used. The conductive plug of the second substrate is designed to be located at the electrode pad portion of the first substrate when placed at a predetermined position above the first substrate.

The photocurable resin composition solution of Formulation Example 1 was coated onto a first substrate having a diameter of 8 inches using a spin coater so as to have a film thickness of 9.5 μm. In order to remove the solvent, prebaking was performed at 130° C. for 2 minutes using a hot plate, and then exposure was performed through a quartz mask designed to shield the electrode pad portion from light. The exposure device used was a contact aligner type exposure device manufactured by SUSS Microtech. After irradiation, PEB was performed at 130° C. for 3 minutes using a hot plate and then cooled. Thereafter, after the coating, the first substrate was spray developed using 2-propanol for 5 minutes to form a photocurable resin film having an opening pattern in the electrode pad portion on the first substrate.

A substrate on which conductive plugs are formed by the method described above is used as the second substrate.

The first substrate after development and the second substrate with conductive plugs are aligned, the electrode pads and the conductive plugs are connected, and a pressure of 10 kN is applied for 5 minutes while heating to 160°C. The first substrate and the second substrate were bonded together via a curable resin film. A wafer bonder manufactured by EV Group was used to bond the substrates. Subsequently, a pressure of 10 kN was applied for 5 minutes while maintaining the temperature at 160°C. Further, heating was performed at 260° C. for 30 seconds to melt the SnAg at the tip of the conductive plug, thereby establishing an electrical connection between the conductive plug and the electrode pad portion.

Further, final curing was performed by heating at 180° C. for 2 hours in an oven under an inert gas.

An adhesion test using a stud pull after curing showed that the adhesion between the first and second boards was good, but a conductivity test using a tester showed that a short circuit may have occurred in a part of the circuit. sex was suggested. Through X-ray observation and ultrasonic flaw detection, it was confirmed that there were gaps in the photosensitive insulating layer around the conductive plug.

From the above example, by further pressurizing the bonded first substrate and second substrate or second element with an additional pressure higher than that during pressure contact, a good electrical connection can be achieved and the photosensitive area around the conductive plug can be improved. A method for manufacturing a semiconductor device in which gaps in the insulating layer have disappeared can be achieved. On the other hand, the above comparative example suggests that unless additional pressure is applied at a higher level than during pressure welding, a short circuit may occur in a part of the circuit, and a photosensitive insulating layer is placed around the conductive plug. The existence of voids was confirmed.

As described above, according to the present invention, by using adhesion through a photosensitive insulating layer, even if the electrodes of the semiconductor element are highly dense, the semiconductor element and the circuit board can be easily adhered and high adhesion can be achieved. It is possible to provide a method for manufacturing a semiconductor device which has a high reliability and insulating properties as an electric/electronic component.

Note that the present invention is not limited to the above embodiments. The above-mentioned embodiments are illustrative, and any embodiment having substantially the same configuration as the technical idea stated in the claims of the present invention and having similar effects may be included in the present invention. covered within the technical scope of.

DESCRIPTION OF SYMBOLS 1... Electrode pad, 2... Conductive plug, 3... First substrate, 4... Conductive plug, 5... Second substrate or second element, 6... Solder bump, 7... Photosensitive resin layer, 8... On electrode pad 9... Opening pattern on conductive plug, 2101... Photosensitive polyimide resin, 2102... Substrate or semiconductor element, 2110... Electrode pad, 2114... Bump, 2120... Semiconductor element with bump.

Claims (5)

A method for manufacturing a semiconductor device having a three-dimensional stacked structure configured by stacking a plurality of semiconductor circuit layers, the method comprising:
(1) A first substrate provided with an electrode pad, which is a conductive connection part, exposed to the outside of the substrate, or a conductive plug made of a conductive material so as to protrude from the electrode pad;
A step of preparing a second substrate or a second element provided with a conductive plug made of a conductive material so as to be exposed to the outside of the substrate,
The prepared first substrate, second substrate, and second element are arranged so that when the second substrate or the second element is arranged facing the first substrate, the electrode pad or the second element of the first substrate is one in which the conductive plug of the second substrate or the second element is designed so as to be located on the conductive plug,
(2) (i) Covering the electrode pad or conductive plug forming surface of the first substrate with a photosensitive insulating layer; (ii) Insulating the conductive plug forming surface of the second substrate or the second element with a photosensitive insulating layer; forming a photosensitive insulating layer on the surface by performing one or both of the following steps:
(3) The photosensitive insulating layer formed on the electrode pad or conductive plug formation surface on the first substrate and/or the conductive plug formation surface on the second substrate or the second element. forming an opening pattern on the electrode pad or the conductive plug by lithography through a mask;
(4) By adhering the second substrate or the second element to a predetermined position of the first substrate by pressure contact, the second substrate or the second element is bonded to the first substrate through the photosensitive insulating layer in which the opening pattern is formed. a step of bonding two substrates or the second element;
(5) further pressurizing the bonded first substrate and the second substrate or the second element with an additional pressure higher than that at the time of pressure contact;
(6) a step of fixing and electrically connecting the electrode pad or conductive plug of the first substrate and the conductive plug of the second substrate or the second element by a first baking; and (7) the photosensitive a step of curing the insulating layer in a second bake;
After
A method for manufacturing a semiconductor device, wherein the photosensitive insulating material used for forming the photosensitive insulating layer has an elastic modulus of 0.01 to 1.5 GPa at 25° C. after being exposed to light and cured. As the second substrate, a substrate on which the second element is installed with a temporary adhesive is used, or as the second element, an element formed by dividing the second substrate into pieces is used. The method for manufacturing a semiconductor device according to claim 1. 1 or 2, wherein the photosensitive insulating layer is an organic layer selected from acrylic resin, polyimide resin, polybenzoxazole (PBO) resin, epoxy resin, and silicone resin. Item 2. A method for manufacturing a semiconductor device according to item 2. As the photosensitive insulating layer,
(A) a silicone skeleton-containing polymer compound having a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 3,000 to 500,000;

(In the formula, R ¹ to R ⁴ represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, which may be the same or different. m is an integer of 1 to 100. a, b, c, d are 0 or a positive number, and a, b, c, and d cannot be 0 at the same time.However, a+b+c+d=1.Furthermore, X is an organic group represented by the following general formula (2), and Y is the following general formula. It is an organic group shown in (3).)

(In the formula, Z is

is a divalent organic group selected from any of the following, and n is 0 or 1. R ⁵ and R ⁶ are each an alkyl group or an alkoxy group having 1 to 4 carbon atoms, and may be different or the same. k is 0, 1, or 2. )

(In the formula, V is

is a divalent organic group selected from any of the following, and p is 0 or 1. R ⁷ and R ⁸ are each an alkyl group or an alkoxy group having 1 to 4 carbon atoms, and may be different or the same. h is either 0, 1, or 2. )
(B) one or more crosslinking agents selected from formaldehyde or an amino condensate modified with formaldehyde-alcohol, and a phenol compound having an average of two or more methylol groups or alkoxymethylol groups in one molecule;
(C) a photoacid generator that is decomposed by light with a wavelength of 190 to 500 nm and generates acid;
(D) an epoxy group-containing crosslinking agent,
(E) solvent;
A film obtained by coating a chemically amplified negative resist composition containing a chemically amplified negative resist composition on a substrate and drying it, or a photocurable dry film obtained by coating and drying the composition on a support film. 4. The method of manufacturing a semiconductor device according to claim 1, wherein a film obtained by attaching a film to a substrate is used. 5. The method of manufacturing a semiconductor device according to claim 1, wherein in the step (5), the applied pressure is 0.1 MPa to 30 MPa.

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