JP7346148B2 - liquid discharge head - Google Patents

Description

The present invention relates to a liquid ejection head.

An electrical connection part for supplying power from an external power source to a pressure generating element that pressurizes the liquid is formed on the side of the recording element substrate that ejects the liquid, on which the ejection ports are formed. However, if the electrical connection is formed on the side of the discharge port, the so-called mist of the liquid discharged from the discharge port may adhere to the electrical connection, causing problems such as corrosion of the electrical connection. It may happen.

For this reason, it is desirable that the electrical connection portion be separated from the region where the discharge port is formed. Therefore, Patent Document 1 describes a method of providing an electrical connection portion on the back side of the discharge port surface. According to this, in order to provide an electrical connection part on the back side of the discharge port surface, it is necessary to drill a plurality of through holes from the back side of the side of the silicon substrate that is to be joined to the discharge port member provided with the discharge port. be.

Japanese Patent Application Publication No. 2006-27109

When a silicon substrate is used as a recording element substrate, a silicon substrate having a (100) plane on the surface is generally employed. Furthermore, it is known that a silicon substrate having a (100) plane on its surface is easily broken in the [110] direction. Therefore, if the arrangement direction of the plurality of through holes drilled from the back side of the silicon substrate is along the [110] direction, there is a risk that the silicon substrate will crack and the recording element substrate will be damaged when an external force is applied to the silicon substrate. be.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a liquid ejection head that can suppress damage to a recording element substrate in which a plurality of through holes are formed from the back side.

In order to solve the above problems, the present invention provides a discharge port forming member that includes a discharge port that discharges a liquid, a pressure generating element that generates energy for pressurizing the liquid in order to discharge the liquid, and a pressure generating element that generates energy for pressurizing the liquid in order to discharge the liquid. a silicon substrate bonded to the discharge port forming member, the silicon substrate comprising: an electrical connection portion connected to the generation element via electrical wiring for supplying power to the pressure generation element to drive the pressure generation element; In the liquid ejection head including a recording element substrate having a recording element substrate, a first recess and a second recess each having the electrical connection portion at the bottom are formed on the back surface of the side of the silicon substrate to which the ejection port forming member is bonded. The crystal orientation of the back surface is the (100) plane, and the extension line of the side extending along the <110> direction of the silicon substrate among the sides at the opening of the first recess, and the The first recess and the second recess are arranged adjacent to each other such that the extension line of the side extending along the <110> direction among the sides of the opening of the second recess is offset. It is characterized by

According to the present invention, it is possible to provide a liquid ejection head that can suppress damage to a recording element substrate in which a plurality of recesses are formed from the back side.

FIG. 3 is a perspective view showing a liquid ejection head. FIG. 3 is a perspective view showing a recording element substrate and an electric wiring member. Schematic diagram showing the configuration of electrical connections. FIG. 1 is a schematic diagram showing a silicon substrate according to the first embodiment. FIG. 3 is a flow diagram showing a manufacturing process of a liquid ejection head. FIG. 3 is a schematic diagram showing a manufacturing process of a liquid ejection head. FIG. 3 is a schematic diagram showing a silicon substrate according to a second embodiment. FIG. 7 is a schematic diagram showing a liquid ejection head according to a third embodiment. FIG. 3 is a schematic diagram showing a silicon substrate according to another embodiment. FIG. 3 is a schematic diagram showing a silicon substrate according to another embodiment. FIG. 3 is a schematic diagram showing a silicon substrate according to another embodiment. FIG. 3 is a schematic diagram showing a silicon substrate according to a comparative example.

Hereinafter, a liquid ejection head and a method for manufacturing the same according to an embodiment of the present invention will be described with reference to the drawings. However, the following description does not limit the scope of the present invention. As an example, in this embodiment, a thermal method is used as the liquid ejection head in which the liquid is ejected by generating bubbles using a heating element, but liquid ejection heads employing a piezo method and various other liquid ejection methods may also be used. The present invention can be applied. Furthermore, as the liquid ejection head of this embodiment, a so-called page wide type head having a length corresponding to the width of the recording medium is illustrated, but a so-called serial type head that performs recording while scanning the recording medium is illustrated. The present invention can also be applied to a type of liquid ejection head. An example of a serial liquid ejection head is a configuration in which one recording element substrate for black ink and one recording element substrate for color ink are mounted.

(First embodiment)
(Liquid discharge head)
A liquid ejection head according to this embodiment will be explained using FIG. 1. FIG. 1 is a perspective view showing a liquid ejection head 100 according to this embodiment. The liquid ejection head 100 of this embodiment is a page-wide liquid ejection head in which 16 recording element substrates 30 capable of ejecting ink of four colors C/M/Y/K are linearly arranged (arranged inline). be. The liquid ejection head 100 includes each recording element substrate 30 , a flexible electrical wiring member 31 , a plate-shaped electrical wiring board 90 , a signal input terminal 91 , and a power supply terminal 92 . The signal input terminal 91 and the power supply terminal 92 are electrically connected to a control section of a recording apparatus main body (not shown) that has a transport section (not shown) that transports a recording medium (not shown) and a liquid ejection head 100. Ru. Then, an ejection drive signal and electric power necessary for ejection are supplied to the recording element substrate 30 via the electrical wiring member 31. The electrical wiring member 31 is, for example, an FPC. By consolidating the wiring using the electrical circuit of the electrical wiring board 90, the number of signal input terminals 91 and power supply terminals 92 installed can be reduced compared to the number of recording element boards 30. This reduces the number of electrical connections that need to be removed when attaching and detaching the liquid ejection head 100 to and from the recording apparatus main body.

Although FIG. 1 shows a page-wide liquid ejection head in which the recording element substrate 30 is arranged linearly in the longitudinal direction of the liquid ejection head, the present invention is not limited to this. Page-wide liquid ejection heads arranged in a staggered manner may also be used.

(Recording element substrate)
The recording element substrate, which is a feature of the present invention, will be described with reference to FIGS. 2 to 4. First, the electrical connection between the recording element substrate 30 and the electrical wiring member 31 will be explained with reference to FIG. FIG. 2 is a perspective view showing one recording element substrate 30 and electric wiring member 31 among the plurality of recording element substrates 30 and electric wiring members 31 provided in the liquid ejection head 100, and shows the ejection ports of the recording element substrate 30. The figure shows the back surface of the surface on which is provided (hereinafter simply referred to as the back surface). FIG. 2A is a perspective view showing a state before the recording element substrate 30 and the electrical wiring member 31 are electrically connected. FIG. 2(b) is a perspective view showing a state in which they are electrically connected.

In this embodiment, as shown in FIG. 2B, the electrical connection portion 17 formed on the back surface of the recording element substrate 30 and the terminal 51 of the electrical wiring member 31 are connected to the metal wire 7 (FIG. 3). Electrical connections are made using Each electrical connection portion is covered with a sealing member 63, and a portion of the sealing member 63 is filled in the recess 3 (FIG. 3). In this embodiment, as shown in FIG. 2B, a state in which the recording element substrate 30 and the electrical wiring member 31 are connected is considered as one module, and a total of 16 modules are arranged to perform page-wide liquid ejection. It makes up the head. With this modular configuration, a liquid ejection head of a required length can be provided by appropriately changing the number of modules to be mounted.

Next, the configuration of the recording element substrate 30 will be described in detail with reference to FIG. FIG. 3 is a schematic diagram showing a part of the BB cross section in FIG. 2(b). Note that although the channel member 120 is not illustrated in FIG. 2(b), it is illustrated in FIG. 3 for explanation. The electrical wiring member 31 is placed on the back surface of the silicon substrate 1, and the terminals 51 of the electrical wiring member 31 and the electrical connection portions 17 of the recording element substrate 30 are electrically connected by so-called wire bonding. The recording element substrate 30 is in close contact with the channel member 120 via the sealing member 121. Ink is supplied to the ejection port 19 from the ink supply port 20 formed by the flow path member 120 .

As shown in FIG. 3, the recording element substrate 30 includes a silicon substrate 1, electrical wiring 22, and an ejection port member 21. An ink supply port 20 is formed in the recording element substrate 30 , and the ink supplied from the ink supply port 20 is pressurized by the pressure generating element 18 and ejected from the ejection port 19 . A pressure generating element array is formed by arranging a plurality of pressure generating elements 18 along the [110] direction of a silicon substrate, which will be described later. In this embodiment, the pressure generating element 18 is a heater that generates thermal energy, generates bubbles in the ink by heating, and discharges the ink by the bubbling pressure of the bubbles. The pressure generating element 18 is electrically connected to the electrical connection section 17 via the electrical wiring 22, and by connecting the electrical connection section 17 to the outside of the recording element substrate 30, electric power for driving the pressure generation element 18 is generated. is supplied to the pressure generating element 18. A through hole 3 is formed on the back surface of the silicon substrate 1 by a so-called dry etching method, and an electrical connection portion 17 is located at the bottom 16 of the through hole. Therefore, the through hole 3 exposes the electrical connection portion 17. Further, the pressure generating element array and the electrical connection portion 17 constitute an electrical wiring layer. As shown in FIG. 3, the silicon substrate 1 has an ejection port member 21 and an electric wiring layer on its surface.

Note that although the shapes of the through holes 3 in the recording element substrate 30 (FIG. 4) described below are different from those of the through holes 3 in FIG. 3, the present invention is applicable to either form. For the sake of explanation, FIG. 3 merely shows the recording element substrate 30 more simply than the recording element substrate 30 in FIG.

Next, the formation locations of the through holes 3 in the recording element substrate 30 will be explained using FIG. 4. FIG. 4A is a diagram showing a wafer on which a plurality of recording element substrates 30 are formed and an enlarged view of a part thereof. FIG. 4(b) is a diagram showing a cross section along line AA' of the wafer shown in FIG. 4(a2). By using a wafer 32 having a (100) plane on the front surface, the back surface of the silicon substrate 1 is made to be a (100) plane. A silicon substrate having a (100) plane on its surface is easily broken in the Miller index [110] direction shown by arrow 53. Here, as shown in Figure (a2), the shape of the through hole 3 in this embodiment is a rectangle having sides substantially orthogonal to the [110] direction. In addition, as shown in FIG. 4(a2), the first through hole 3a formed near the line 9 for dicing the wafer, and the width of the first through hole 3a is approximately one width of the through hole 3 with respect to the first through hole 3a. There is a second through hole 3b formed at a position separated from the line 9 by a length. The first through hole 3a and the second through hole 3b are formed in the silicon substrate 1 on the left side of the paper with the ink supply port 20 as a boundary. That is, the first through-hole 3a and the second through-hole 3b correspond to one pressure-generating element row made up of a plurality of pressure-generating element rows 18 arranged in the Y direction. Further, as shown in FIG. 4, the second through hole 3b is located closest to the first through hole 3a in the [110] direction.

It is assumed that among the sides of the opening 52 of the first through hole 3a formed on the back surface of the silicon substrate 1, an extension line 4a of the side extending along the [110] direction is drawn to that side. Similarly, it is assumed that an extension line 4b of a side of the second through hole 3b extending along the [110] direction is drawn on that side. At this time, the through holes 3a and the through holes 3b are arranged so that the extension lines 4a and 4b are shifted in a direction (X direction) perpendicular to the [110] direction. Note that the first through hole 3a has two sides extending along the [110] direction, but in FIG. 4(a2), only the extension line 4a of the side on the second through hole 3b side is shown. It shows. The same applies to the second through hole 3b, and an extension line 4b of the side on the first through hole 3a side is illustrated. In the present invention, extension lines of all sides extending along the [110] direction among the sides at the openings of the first through hole 3a and the second through hole are in a direction perpendicular to the [110] direction. The first through hole 3a and the second through hole 3b are arranged so as to be offset from each other in the X direction. With this arrangement, the through hole closest to the first through hole 3a in the [110] direction, which has a side that coincides with the side extending in the [110] direction of the first through hole 3a, has a side extending in the [110] direction. 3 through hole 3c. Therefore, the arrangement interval between the first through-hole 3a and the through-hole having a side closest to the first through-hole 3a and matching the extension of the side extending in the [110] direction of the first through-hole 3a By increasing , the rigidity of the silicon substrate is improved. Thereby, it is possible to suppress damage to the silicon substrate 1 in the [110] direction when an external force or the like is applied.

Further, according to the present invention, damage to the silicon substrate 1 can be suppressed even during dicing of the wafer 32. This is because the first through holes 3a that are relatively close to the line 9 and the second through holes 3b that are relatively distant from the line 9 are arranged alternately, thereby increasing the rigidity of the wafer 32 near the line 9.

Note that in FIGS. 4A1 and 4A2, the first through hole 3a and the second through hole 3b are arranged along the dicing line 9, that is, along the edge of the recording element substrate 30, but this embodiment is not limited to this. That is, for example, the first through hole 3a and the second through hole 3b may be arranged in a region between the dicing line 9 and the ink supply port 20 (FIG. 4(c)). Also in this case, the same effect as that of the silicon substrate 1 in FIG. 4(a) can be obtained. Further, as shown in FIG. 4(a1), although the above description has been made using a silicon substrate 1 having a rectangular outer shape, the present invention is based on a silicon substrate 1 having a parallelogram outer shape as shown in FIG. Substrate 1 may also be used.

(Comparative example)
A comparative example for the present invention will be described with reference to FIG. 12. FIG. 12 is a schematic diagram showing a silicon substrate according to a comparative example. The silicon substrate 1 according to the comparative example differs from the silicon substrate 1 according to the present invention described above in the extension of the side extending in the [110] direction of the first through hole 3a and the extension line of the side extending in the [110] direction of the first through hole 3a. The extension lines of the sides extending in the [110] direction should match. Therefore, the arrangement interval between the first through-hole 3a and the through-hole having a side closest to the first through-hole 3a and matching the extension of the side extending in the [110] direction of the first through-hole 3a As , the rigidity of the silicon substrate decreases. This makes the silicon substrate more likely to be damaged in the [110] direction.

On the other hand, when the first through hole 3a and the second through hole 3b are arranged as described in the embodiment of the present application, the through hole is located on the extension line of the side extending in the [110] direction of the first through hole 3a. The hole becomes the third through hole 3c, and the arrangement interval of the through holes becomes large. This improves the rigidity of the silicon substrate, and can prevent the silicon substrate 1 from being damaged in the [110] direction when an external force or the like is applied.

(Method for manufacturing liquid ejection head)
A method for manufacturing a liquid ejection head according to this embodiment will be described with reference to FIGS. 5 and 6. FIG. 5 is a flowchart showing each manufacturing process. FIG. 6 is a schematic diagram showing a cross section taken along the line AA′ shown in FIG. 4(a2) of the recording element substrate 30 corresponding to each manufacturing process shown in FIG.

First, a silicon substrate 1 provided with an ejection port member 21 and the like is prepared (Step 1 in FIG. 5, FIG. 6(a)). Next, a mask is formed on the back surface 10 of the silicon substrate 1 by patterning using a tenting resist 41 (Step 2 in FIG. 5, FIG. 6(b)). Next, holes for electrical connection are formed by reactive ion etching (RIE) using the tenting resist 41 as a mask. At this time, the silicon substrate 1 may be penetrated, or if the silicon substrate 1 is to be made into a two-step shape, it may be made into a two-step shape using a tenting resist 42 described below (step 3 in FIG. 5, FIG. 6 ( c)).

Next, after removing the tenting resist 41, a tenting resist 42 having an opening smaller than the opening of the tenting resist 41 is formed on the back surface of the silicon substrate 1. By processing the silicon substrate 1 by RIE using the tenting resist 42 as a mask, the two-stage through holes 3 are formed. Furthermore, using the mask, the insulating layer (not shown) on the electrode part (electrical connection part) 17 for electrical connection is removed to expose the electrical connection part 17 (step 4 in FIG. 5, FIG. 6(d)) ).

Next, the silicon substrate 1 is diced along the dicing lines 9 into individual chips. Thereafter, the electrical wiring member 31 formed on the mounting member 43 and the electrical connection portion 17 formed on the back surface are electrically connected by a wire bonding method using flexible wiring such as Au wire 7. Thereafter, the inside of the through hole 3 is filled with a sealing member 63 that covers the electrical connection location (Step 5 in FIG. 5, FIG. 6(e)). Note that although the position of the electrical wiring member 31 in FIG. 6(e) is different from the position of the electrical wiring member 31 in FIG. 3, the present invention is not limited to either. .

(Second embodiment)
A second embodiment according to the present invention will be described with reference to FIG. Note that the same parts as in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. FIG. 7 is a diagram showing a silicon substrate 1 in the second embodiment. 7(a) is a top view of the back surface of the silicon substrate 1, FIG. 7(b) is a schematic cross-sectional view taken along line DD' shown in FIG. 7(a), and FIG. 7(c) is a recording element substrate 30 and electrical wiring. FIG. 6 is a diagram illustrating a schematic view of electrically connecting members 31. FIG.

The difference between this embodiment and the first embodiment is that the through holes 3d and 3e are located at positions asymmetrical to the first through hole 3a and the second through hole 3b with the ink supply port 20 as the axis of symmetry. It is being formed. It is known that silicon substrates are susceptible to cracking even in the X direction, which is perpendicular to the [110] direction. Therefore, by arranging the through holes 3 as in this embodiment, the rigidity of the silicon substrate 1 can be increased even in the X direction perpendicular to the [110] direction, so that damage to the silicon substrate 1 in the can be suppressed. That is, in this embodiment, damage to the silicon substrate 1 in the [110] direction can be suppressed, and damage in the X direction can also be suppressed.

(Third embodiment)
A third embodiment according to the present invention will be described with reference to FIG. 8. Note that the same components as in the first embodiment are given the same reference numerals, and the description thereof will be omitted. A feature of this embodiment is that a cover member 110 is attached to the ejection port side of the liquid ejection head 100 where the ejection port 19 is formed.

FIG. 8(a) is a schematic diagram showing a part of the recording element substrate 30 taken along the BB cross section shown in FIG. 2(b). FIG. 8B is a schematic diagram of the plurality of recording element substrates 30 and the cover member 110 attached to the cover member 110, viewed from the back side of the recording element substrate 30. As shown in FIG. 8B, the cover member 110 has a frame shape with an opening for exposing the recording element substrate 30, and is attached to the inner surface of the frame using an adhesive (not shown). The recording element substrate 30 is fixed.

Since the through hole 3 is formed on the back surface of the recording element substrate 30, the thickness of the substrate at that portion becomes thinner and the strength decreases, and there is a risk that the substrate may be deformed or cracked. In this embodiment, a cover member 110 is provided corresponding to the position where the through hole 3 is provided. That is, when viewed from the discharge port surface, the through hole 3 and the frame portion of the cover member 110 are located at an overlapping position. Therefore, this embodiment is preferable in that the strength of the portion of the recording element substrate 30 where the through hole 3 is located is improved. Various materials such as resin and metal can be used as the material for the cover member 110, but metals such as SUS are preferable from the viewpoint of strength. Further, resins can also be used, but from the viewpoint of strength, it is preferable to use resins containing fillers.

(Other embodiments)
Other embodiments according to the present invention will be described with reference to FIGS. 9 to 11. Note that the same parts as in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. 9 to 11 each show a modification of the arrangement of the through holes 3 in the silicon substrate, each having the same effect as the first embodiment. FIG. 9 is a schematic diagram showing a silicon substrate 1 in which first through holes 3a and second through holes 3b are arranged in parallel in the X direction and arranged in the [110] direction. That is, the second through hole 3b is arranged on the bisector (not shown) of the side extending in the [110] direction of the first through hole 3a. By doing so, the first through hole 3a and the through hole having a side that is closest to the first through hole 3a and coincides with an extension line of the side extending in the [110] direction of the first through hole 3a The spacing between the holes and the holes becomes larger. Thereby, the rigidity of the silicon substrate 1 is improved, so that damage to the silicon substrate 1 can be suppressed.

FIG. 10 is a schematic diagram of a silicon substrate 1 in which a first through hole 3a is arranged, the side extending in the X direction being larger than the side of the second through hole 3b. Regarding the through-holes in FIG. 10, the bisector (not shown) of the side of the first through-hole 3a intersects in the [110] direction and the second through-hole 3b intersects in the [110] direction. They are arranged so that the bisectors (not shown) of the sides overlap. Regarding the through-holes in FIG. 10, an extension line 4a of the side extending in the [110] direction of the first through-hole 3a and an extension line 4b of the side extending in the [110] direction of the second through-hole 3b are shifted in the X direction as shown in FIG. 4 in the first embodiment. Therefore, the through hole closest to the first through hole 3a and having a side that matches the extension of the side of the first through hole 3a extending in the [110] direction becomes the third through hole 3c. As a result, the arrangement of the first through hole 3a and a through hole having a side closest to the first through hole 3a and matching an extension line of the side extending in the [110] direction of the first through hole 3a The interval becomes larger. Therefore, the rigidity of the silicon substrate is improved, and damage to the silicon substrate 1 in the [110] direction when an external force or the like is applied can be suppressed.

FIG. 11 is a schematic diagram when through holes are arranged in a parallelogram silicon substrate 1. As shown in FIG. 11(a) shows the case where the through hole is formed along the long side of the silicon substrate 1, and FIG. 11(b) shows the case where the through hole is formed along the short side of the silicon substrate 1. Similarly to the first embodiment, in FIG. 11, an extension line 4a of the side extending in the [110] direction of the first through hole 3a and an extension line 4a of the side extending in the [110] direction of the second through hole 3b The extension line 4b of the side is shifted in the X direction as shown in FIG. 4 in the first embodiment. Therefore, the through hole closest to the first through hole 3a and having a side that matches the extension of the side of the first through hole 3a extending in the [110] direction becomes the third through hole 3c. As a result, the arrangement of the first through hole 3a and a through hole having a side closest to the first through hole 3a and matching an extension line of the side extending in the [110] direction of the first through hole 3a The interval becomes larger. Therefore, the rigidity of the silicon substrate is improved, and damage to the silicon substrate 1 in the [110] direction when an external force or the like is applied can be suppressed.

1 Silicon substrate 3a First recess 3a
3b Second recess 3b
4a Extension line 4b Extension line 16 Back surface 17 Electrical connection portion 18 Pressure generating element 19 Ejection port 21 Ejection port forming member 22 Electrical wiring 30 Recording element substrate 52 Opening 100 Liquid ejection head

Claims (14)

a discharge port member including a discharge port for discharging liquid;
A pressure generating element row in which pressure generating elements that pressurize the liquid in order to discharge the liquid is connected to the pressure generating elements via electrical wiring, and power for driving the pressure generating elements is supplied to the pressure generating elements. an electrical wiring layer comprising an electrical connection for supplying;
a silicon substrate having the discharge port member and the electrical wiring layer on its surface;
In a liquid ejection head including a recording element substrate having
The silicon substrate has a first through hole and a second through hole that penetrate the silicon substrate and expose the electrical connection portion, the first through hole corresponding to one row of the pressure generating element rows. and a second through hole,
An opening of the first through-hole and an opening of the second through-hole are opened on the back surface of the silicon substrate, and the opening of the second through-hole is formed in the [110] of the silicon substrate. located at a position closest to the opening of the first through hole in the direction;
The back surface of the silicon substrate is a (100) plane,
Among the sides at the opening of the first through-hole, an extension line of the side extending along the [110] direction, and among the sides at the opening of the second through-hole, the [110] direction The liquid ejection head is characterized in that the extension lines of the sides extending along are deviated from each other in a direction perpendicular to the [110] direction. 2. The liquid ejection head according to claim 1, wherein the silicon substrate has a rectangular outer shape having sides extending along the [110] direction. 3. The liquid ejection head according to claim 2, wherein the first and second through holes are arranged at an end of the silicon substrate. 4. The shape of the opening of the first and second through holes is a rectangle having sides substantially perpendicular to the [110] direction. The liquid ejection head described. The bisector of the side of the first through hole that intersects in the [110] direction and the bisector of the side of the second through hole that intersects in the [110] direction overlap so that the first through hole and the second through hole are arranged,
5. The length of the intersecting side of the first through hole is longer than the length of the intersecting side of the second through hole. The liquid ejection head described. Claims 1 to 4, wherein the second through hole is arranged on a bisector of a side of the first through hole extending along the [110] direction. The liquid ejection head according to any one of the items. An ink supply port for supplying the liquid to the ejection port is further formed in the silicon substrate,
A third through hole and a fourth through hole having the electrical connection portion at the bottom thereof are located at positions asymmetrical to the first through hole and the second through hole on the back surface with the ink supply port as an axis of symmetry. The liquid ejection head according to any one of claims 1 to 6, characterized in that the liquid ejection head has a hole. The external shape of the silicon substrate is a parallelogram having sides inclined with respect to the [110] direction, and the first and second through holes are arranged along the inclined sides. The liquid ejection head according to claim 1. 9. The liquid ejection head according to claim 1, wherein the pressure generating element is a heater for heating the liquid. 10. The liquid ejection head according to claim 1, wherein the plurality of recording element substrates are arranged linearly in the longitudinal direction of the liquid ejection head. 10. The liquid ejection head according to claim 1, wherein the plurality of recording element substrates are arranged in a staggered manner in the longitudinal direction of the liquid ejection head. 12. The liquid ejection head according to claim 1, wherein the liquid ejection head is a page-wide liquid ejection head in which a plurality of the recording element substrates are arranged. The liquid ejection head according to any one of claims 1 to 12, further comprising a cover member that covers a side of the liquid ejection head where the ejection port is formed. further comprising an electrical wiring member electrically connected to the electrical connection part via a wire and for supplying the electric power to the electrical connection part,
14. Any one of claims 1 to 13, wherein the first and second through-holes are filled with a sealing member that covers a connection between the electrical connection section and the wire. The liquid ejection head described in .

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