JP7336983B2 - イオンセンサ装置 - Google Patents

イオンセンサ装置 Download PDF

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Publication number
JP7336983B2
JP7336983B2 JP2019236925A JP2019236925A JP7336983B2 JP 7336983 B2 JP7336983 B2 JP 7336983B2 JP 2019236925 A JP2019236925 A JP 2019236925A JP 2019236925 A JP2019236925 A JP 2019236925A JP 7336983 B2 JP7336983 B2 JP 7336983B2
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field effect
potential
sensor device
drain
voltage
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JP2019236925A
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Japanese (ja)
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JP2021105564A5 (https=
JP2021105564A (ja
Inventor
裕之 関根
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Tianma Japan Ltd
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Tianma Japan Ltd
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Application filed by Tianma Japan Ltd filed Critical Tianma Japan Ltd
Priority to JP2019236925A priority Critical patent/JP7336983B2/ja
Priority to US17/099,976 priority patent/US11846604B2/en
Priority to CN202410985583.1A priority patent/CN118883686A/zh
Priority to CN202011284635.0A priority patent/CN113049658B/zh
Publication of JP2021105564A publication Critical patent/JP2021105564A/ja
Publication of JP2021105564A5 publication Critical patent/JP2021105564A5/ja
Application granted granted Critical
Priority to US18/241,545 priority patent/US12235234B2/en
Publication of JP7336983B2 publication Critical patent/JP7336983B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
JP2019236925A 2019-12-26 2019-12-26 イオンセンサ装置 Active JP7336983B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019236925A JP7336983B2 (ja) 2019-12-26 2019-12-26 イオンセンサ装置
US17/099,976 US11846604B2 (en) 2019-12-26 2020-11-17 Ion sensing device
CN202410985583.1A CN118883686A (zh) 2019-12-26 2020-11-17 离子感测设备
CN202011284635.0A CN113049658B (zh) 2019-12-26 2020-11-17 离子感测设备
US18/241,545 US12235234B2 (en) 2019-12-26 2023-09-01 Ion sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019236925A JP7336983B2 (ja) 2019-12-26 2019-12-26 イオンセンサ装置

Publications (3)

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JP2021105564A JP2021105564A (ja) 2021-07-26
JP2021105564A5 JP2021105564A5 (https=) 2022-12-01
JP7336983B2 true JP7336983B2 (ja) 2023-09-01

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JP2019236925A Active JP7336983B2 (ja) 2019-12-26 2019-12-26 イオンセンサ装置

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US (2) US11846604B2 (https=)
JP (1) JP7336983B2 (https=)
CN (2) CN113049658B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7336983B2 (ja) * 2019-12-26 2023-09-01 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イオンセンサ装置
JP7573836B2 (ja) * 2020-12-16 2024-10-28 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イオンセンサ装置
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
CN114002300B (zh) * 2021-10-15 2022-07-12 华中科技大学 一种基于液栅型场效应晶体管生物传感器的电路检测系统
CN114324538B (zh) * 2021-12-31 2024-06-07 上海天马微电子有限公司 检测器件及其检测方法
JP2024060759A (ja) * 2022-10-20 2024-05-07 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 撮像装置
CN116075159B (zh) * 2023-01-19 2025-11-04 杭州领挚科技有限公司 一种薄膜晶体管传感像素电路、阵列和结构
WO2025142975A1 (ja) * 2023-12-28 2025-07-03 三井金属鉱業株式会社 デバイス及びこれを備える濃度測定装置並びにこれを用いた濃度測定方法
WO2025226794A1 (en) * 2024-04-24 2025-10-30 The University Of Chicago Systems and methods for electrically detecting a biomarker

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015190848A (ja) 2014-03-28 2015-11-02 Ｎｌｔテクノロジー株式会社 Ｔｆｔイオンセンサ並びにこれを用いた測定方法及びｔｆｔイオンセンサ機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128345A (ja) * 1983-12-15 1985-07-09 Olympus Optical Co Ltd イオン濃度測定装置
JPH04181150A (ja) * 1990-11-15 1992-06-29 Kaoru Santo 脂質膜型匂いセンサ
JP3112599B2 (ja) * 1993-03-30 2000-11-27 新電元工業株式会社 イオンセンサ及びイオン測定方法
US20040132204A1 (en) * 2003-01-03 2004-07-08 Jung-Chuan Chou Portable pH detector
JP4669213B2 (ja) * 2003-08-29 2011-04-13 独立行政法人科学技術振興機構 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ
TWI241020B (en) * 2004-03-31 2005-10-01 Univ Nat Yunlin Sci & Tech Method of manufacturing TiO2 sensing film, ISFET having TiO2 sensing film, and methods and apparatus for measuring the temperature parameter, drift, and hysteresis thereof
US7544979B2 (en) * 2004-04-16 2009-06-09 Technion Research & Development Foundation Ltd. Ion concentration transistor and dual-mode sensors
US7842174B2 (en) * 2006-06-12 2010-11-30 Utah State University Electrochemical chip with miniaturized sensor array
US8129978B2 (en) * 2006-07-13 2012-03-06 National University Corporation Nagoya University Material detector
US9499981B2 (en) * 2013-05-03 2016-11-22 Ibacos, Inc. Water-management system
JP6656507B2 (ja) 2015-09-18 2020-03-04 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 バイオセンサ及び検出装置
US10466199B2 (en) * 2015-12-28 2019-11-05 National Taiwan University Biosensor device
US10082481B2 (en) * 2016-07-07 2018-09-25 Sharp Life Science (Eu) Limited Bio-sensor pixel circuit with amplification
JP6891658B2 (ja) * 2017-06-16 2021-06-18 株式会社豊田中央研究所 センサ用トランジスタの駆動回路
JP7336983B2 (ja) * 2019-12-26 2023-09-01 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イオンセンサ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015190848A (ja) 2014-03-28 2015-11-02 Ｎｌｔテクノロジー株式会社 Ｔｆｔイオンセンサ並びにこれを用いた測定方法及びｔｆｔイオンセンサ機器

Also Published As

Publication number Publication date
US11846604B2 (en) 2023-12-19
CN113049658A (zh) 2021-06-29
JP2021105564A (ja) 2021-07-26
CN118883686A (zh) 2024-11-01
US12235234B2 (en) 2025-02-25
US20230408441A1 (en) 2023-12-21
CN113049658B (zh) 2024-08-16
US20210199619A1 (en) 2021-07-01

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