CN113049658B - 离子感测设备 - Google Patents

离子感测设备 Download PDF

Info

Publication number
CN113049658B
CN113049658B CN202011284635.0A CN202011284635A CN113049658B CN 113049658 B CN113049658 B CN 113049658B CN 202011284635 A CN202011284635 A CN 202011284635A CN 113049658 B CN113049658 B CN 113049658B
Authority
CN
China
Prior art keywords
field effect
potential
output
voltage
constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011284635.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN113049658A (zh
Inventor
关根裕之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianma Japan Ltd
Original Assignee
Tianma Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianma Japan Ltd filed Critical Tianma Japan Ltd
Priority to CN202410985583.1A priority Critical patent/CN118883686A/zh
Publication of CN113049658A publication Critical patent/CN113049658A/zh
Application granted granted Critical
Publication of CN113049658B publication Critical patent/CN113049658B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
CN202011284635.0A 2019-12-26 2020-11-17 离子感测设备 Active CN113049658B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410985583.1A CN118883686A (zh) 2019-12-26 2020-11-17 离子感测设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019236925A JP7336983B2 (ja) 2019-12-26 2019-12-26 イオンセンサ装置
JP2019-236925 2019-12-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202410985583.1A Division CN118883686A (zh) 2019-12-26 2020-11-17 离子感测设备

Publications (2)

Publication Number Publication Date
CN113049658A CN113049658A (zh) 2021-06-29
CN113049658B true CN113049658B (zh) 2024-08-16

Family

ID=76507905

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202011284635.0A Active CN113049658B (zh) 2019-12-26 2020-11-17 离子感测设备
CN202410985583.1A Pending CN118883686A (zh) 2019-12-26 2020-11-17 离子感测设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202410985583.1A Pending CN118883686A (zh) 2019-12-26 2020-11-17 离子感测设备

Country Status (3)

Country Link
US (2) US11846604B2 (https=)
JP (1) JP7336983B2 (https=)
CN (2) CN113049658B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7336983B2 (ja) * 2019-12-26 2023-09-01 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イオンセンサ装置
JP7573836B2 (ja) * 2020-12-16 2024-10-28 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イオンセンサ装置
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
CN114002300B (zh) * 2021-10-15 2022-07-12 华中科技大学 一种基于液栅型场效应晶体管生物传感器的电路检测系统
CN114324538B (zh) * 2021-12-31 2024-06-07 上海天马微电子有限公司 检测器件及其检测方法
JP2024060759A (ja) * 2022-10-20 2024-05-07 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 撮像装置
CN116075159B (zh) * 2023-01-19 2025-11-04 杭州领挚科技有限公司 一种薄膜晶体管传感像素电路、阵列和结构
WO2025142975A1 (ja) * 2023-12-28 2025-07-03 三井金属鉱業株式会社 デバイス及びこれを備える濃度測定装置並びにこれを用いた濃度測定方法
WO2025226794A1 (en) * 2024-04-24 2025-10-30 The University Of Chicago Systems and methods for electrically detecting a biomarker

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128345A (ja) * 1983-12-15 1985-07-09 Olympus Optical Co Ltd イオン濃度測定装置
JPH04181150A (ja) * 1990-11-15 1992-06-29 Kaoru Santo 脂質膜型匂いセンサ
JP3112599B2 (ja) * 1993-03-30 2000-11-27 新電元工業株式会社 イオンセンサ及びイオン測定方法
US20040132204A1 (en) * 2003-01-03 2004-07-08 Jung-Chuan Chou Portable pH detector
JP4669213B2 (ja) * 2003-08-29 2011-04-13 独立行政法人科学技術振興機構 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ
TWI241020B (en) * 2004-03-31 2005-10-01 Univ Nat Yunlin Sci & Tech Method of manufacturing TiO2 sensing film, ISFET having TiO2 sensing film, and methods and apparatus for measuring the temperature parameter, drift, and hysteresis thereof
US7544979B2 (en) * 2004-04-16 2009-06-09 Technion Research & Development Foundation Ltd. Ion concentration transistor and dual-mode sensors
US7842174B2 (en) * 2006-06-12 2010-11-30 Utah State University Electrochemical chip with miniaturized sensor array
US8129978B2 (en) * 2006-07-13 2012-03-06 National University Corporation Nagoya University Material detector
US9499981B2 (en) * 2013-05-03 2016-11-22 Ibacos, Inc. Water-management system
JP6372848B2 (ja) * 2014-03-28 2018-08-15 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 Ｔｆｔイオンセンサ並びにこれを用いた測定方法及びｔｆｔイオンセンサ機器
JP6656507B2 (ja) 2015-09-18 2020-03-04 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 バイオセンサ及び検出装置
US10466199B2 (en) * 2015-12-28 2019-11-05 National Taiwan University Biosensor device
US10082481B2 (en) * 2016-07-07 2018-09-25 Sharp Life Science (Eu) Limited Bio-sensor pixel circuit with amplification
JP6891658B2 (ja) * 2017-06-16 2021-06-18 株式会社豊田中央研究所 センサ用トランジスタの駆動回路
JP7336983B2 (ja) * 2019-12-26 2023-09-01 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イオンセンサ装置

Also Published As

Publication number Publication date
JP7336983B2 (ja) 2023-09-01
US11846604B2 (en) 2023-12-19
CN113049658A (zh) 2021-06-29
JP2021105564A (ja) 2021-07-26
CN118883686A (zh) 2024-11-01
US12235234B2 (en) 2025-02-25
US20230408441A1 (en) 2023-12-21
US20210199619A1 (en) 2021-07-01

Similar Documents

Publication Publication Date Title
CN113049658B (zh) 离子感测设备
Lauks et al. The extended gate chemically sensitive field effect transistor as multi-species microprobe
US7662341B2 (en) Sensor arrangement and method for operating a sensor arrangement
CN107589165B (zh) 具有放大的生物传感器像素电路
Chung et al. ISFET performance enhancement by using the improved circuit techniques
JP5509118B2 (ja) イオン感応電界効果トランジスタを含む信号処理回路および流体の性質をモニタするための方法
US8129978B2 (en) Material detector
US9071209B1 (en) Systems and methods for a current sensing patch-clamp amplifier
CN103472114B (zh) 带补偿功能的多通道isfet传感器读出电路
CN104937402B (zh) 包括原位校准装置的pH值测量设备
US7981264B2 (en) Drift calibration method and device for the potentiometric sensor
CN102778491B (zh) 传感器
CN110579525B (zh) 传感器装置
CN106921374B (zh) 开关电容式isfet信号读取电路及其控制方法
Li et al. Dual-Gate Oxide Ion-Sensitive Thin-Film Transistor for Panel-Scale Manufacturing of High Resolution and High Sensitivity Biochips
CN114624308B (zh) 离子传感设备
Chou et al. Study on the sensitivity and hysteresis behaviour of the commercial Sentron 1090 A1203 gate pil-ISFET
Chou et al. Study on the characteristics of the measurement system for pH array sensors
Chou et al. Sensitivity and hysteresis behavior of the commercial Sentron 1090 Al2O3 gate pH-ISFET
HK1243171A1 (en) Bio-sensor pixel circuit with amplification
Steffan et al. ASIC measurement system for TFT sensors
JP2017167064A (ja) 電気化学センサ及び電気化学センサを用いた測定方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant