JP7336873B2 - 基板処理方法 - Google Patents

基板処理方法 Download PDF

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Publication number
JP7336873B2
JP7336873B2 JP2019086812A JP2019086812A JP7336873B2 JP 7336873 B2 JP7336873 B2 JP 7336873B2 JP 2019086812 A JP2019086812 A JP 2019086812A JP 2019086812 A JP2019086812 A JP 2019086812A JP 7336873 B2 JP7336873 B2 JP 7336873B2
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film
substrate
pattern
silicon
wafer
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Japanese (ja)
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JP2020096155A5 (https=
JP2020096155A (ja
Inventor
隆幸 勝沼
亨 久松
慎也 石川
嘉英 木原
昌伸 本田
幕樹 戸村
翔 熊倉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW108131778A priority Critical patent/TWI821386B/zh
Priority to CN201910857745.2A priority patent/CN111261514B/zh
Priority to US16/564,851 priority patent/US11114304B2/en
Priority to KR1020190112799A priority patent/KR102867092B1/ko
Publication of JP2020096155A publication Critical patent/JP2020096155A/ja
Publication of JP2020096155A5 publication Critical patent/JP2020096155A5/ja
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  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2019086812A 2018-11-30 2019-04-26 基板処理方法 Active JP7336873B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW108131778A TWI821386B (zh) 2018-11-30 2019-09-04 基板處理方法
CN201910857745.2A CN111261514B (zh) 2018-11-30 2019-09-09 基片处理方法
US16/564,851 US11114304B2 (en) 2018-11-30 2019-09-09 Substrate processing method
KR1020190112799A KR102867092B1 (ko) 2018-11-30 2019-09-11 기판 처리 방법

Applications Claiming Priority (2)

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JP2018225461 2018-11-30
JP2018225461 2018-11-30

Publications (3)

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JP2020096155A JP2020096155A (ja) 2020-06-18
JP2020096155A5 JP2020096155A5 (https=) 2022-03-16
JP7336873B2 true JP7336873B2 (ja) 2023-09-01

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ID=71085070

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JP2019086812A Active JP7336873B2 (ja) 2018-11-30 2019-04-26 基板処理方法

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JP (1) JP7336873B2 (https=)
TW (1) TWI821386B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102516340B1 (ko) * 2020-09-08 2023-03-31 주식회사 유진테크 기판 처리 장치 및 기판 처리 장치의 운용 방법
JP2023002466A (ja) * 2021-06-22 2023-01-10 東京エレクトロン株式会社 プラズマ処理方法、プラズマ処理装置及びプラズマ処理システム
JP7561795B2 (ja) * 2022-06-17 2024-10-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094307A (ja) 2007-10-10 2009-04-30 Tokyo Electron Ltd エッチング方法及び記録媒体
JP2009158774A (ja) 2007-12-27 2009-07-16 Tokyo Electron Ltd 基板処理方法、基板処理装置及び記憶媒体
JP2010165954A (ja) 2009-01-16 2010-07-29 Ulvac Japan Ltd 真空処理装置及び真空処理方法
JP2018032720A (ja) 2016-08-24 2018-03-01 東京エレクトロン株式会社 基板処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI591712B (zh) * 2012-10-03 2017-07-11 應用材料股份有限公司 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻
US10134581B2 (en) * 2016-03-13 2018-11-20 Applied Materials, Inc. Methods and apparatus for selective dry etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094307A (ja) 2007-10-10 2009-04-30 Tokyo Electron Ltd エッチング方法及び記録媒体
JP2009158774A (ja) 2007-12-27 2009-07-16 Tokyo Electron Ltd 基板処理方法、基板処理装置及び記憶媒体
JP2010165954A (ja) 2009-01-16 2010-07-29 Ulvac Japan Ltd 真空処理装置及び真空処理方法
JP2018032720A (ja) 2016-08-24 2018-03-01 東京エレクトロン株式会社 基板処理方法

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Publication number Publication date
TW202025282A (zh) 2020-07-01
TWI821386B (zh) 2023-11-11
JP2020096155A (ja) 2020-06-18

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