JP7335418B2 - トランジスタのヒ素拡散プロファイルエンジニアリング - Google Patents
トランジスタのヒ素拡散プロファイルエンジニアリング Download PDFInfo
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- JP7335418B2 JP7335418B2 JP2022505425A JP2022505425A JP7335418B2 JP 7335418 B2 JP7335418 B2 JP 7335418B2 JP 2022505425 A JP2022505425 A JP 2022505425A JP 2022505425 A JP2022505425 A JP 2022505425A JP 7335418 B2 JP7335418 B2 JP 7335418B2
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- 229910052785 arsenic Inorganic materials 0.000 title claims description 20
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title claims description 20
- 238000009792 diffusion process Methods 0.000 title description 12
- 239000004065 semiconductor Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 65
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000002019 doping agent Substances 0.000 claims description 21
- 238000005137 deposition process Methods 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 14
- 230000007547 defect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- -1 silicon nitrides Chemical class 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910015617 MoNx Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Description
Claims (20)
- トランジスタであって、
チャネル領域上に配置されたゲート電極構造と、
前記チャネル領域に隣接して配置されたヒ素がドープされたソース/ドレインエクステンション領域と、
前記ソース/ドレインエクステンション領域に配置されたヒ素がドープされたシリコン層と、
前記ヒ素がドープされたシリコン層に配置されたソース/ドレイン領域と
を備える、トランジスタ。 - 前記ゲート電極構造は、ゲート電極層、ゲート誘電体層、及びゲートスペーサを含む、請求項1に記載のトランジスタ。
- 前記ゲートスペーサは、前記ソース/ドレインエクステンション領域上に配置される、請求項2に記載のトランジスタ。
- 前記ソース/ドレインエクステンション領域は、第1のドーパント濃度を有する第1のドープされた半導体材料を含む、請求項3に記載のトランジスタ。
- 前記ソース/ドレイン領域は、前記第1のドーパント濃度よりも高い第2のドーパント濃度を有する第2のドープされた半導体材料を含む、請求項4に記載のトランジスタ。
- 前記第1のドープされた半導体材料のドーパントは、前記第2のドープされた半導体材料のドーパントと同じである、請求項5に記載のトランジスタ。
- 前記第1のドープされた半導体材料のドーパントは、前記第2のドープされた半導体材料のドーパントとは異なる、請求項5に記載のトランジスタ。
- トランジスタの形成方法であって、
側壁及び底部を露出させるために、半導体フィンの第1の部分を除去することであって、前記半導体フィンの第2の部分はゲート電極構造の下方に配置されている、半導体フィンの第1の部分を除去することと、
エピタキシャル堆積プロセスにより、前記側壁及び前記底部にヒ素がドープされたシリコン層を形成することと、
前記半導体フィンの第2の部分にヒ素をドープしながら、前記ヒ素がドープされたシリコン層にソース/ドレイン領域を形成することと
を含む方法。 - 前記半導体フィンの第1の部分の除去は、異方性エッチングプロセスによって行われる、請求項8に記載の方法。
- 前記エピタキシャル堆積プロセス中のチャンバ圧力が、1Torrから600Torrの範囲である、請求項8に記載の方法。
- 前記エピタキシャル堆積プロセス中の堆積温度が、500℃から700℃の範囲である、請求項10に記載の方法。
- 前記エピタキシャル堆積プロセス中に、シリコン含有前駆体及びヒ素含有前駆体をプロセスチャンバに流すことを更に含む、請求項11に記載の方法。
- 選択的エピタキシャル堆積プロセスを達成するために、前記エピタキシャル堆積プロセス中に前記プロセスチャンバにエッチング液を流すことを更に含む、請求項12に記載の方法。
- 前記ヒ素がドープされたシリコン層の形成中及び/又は前記ソース/ドレイン領域の形成中に、前記半導体フィンの第2の部分をドープすることを更に含む、請求項8に記載の方法。
- 前記第2の部分が、1E17原子/cm3から2E20原子/cm3の範囲のドーパント濃度を有する、請求項14に記載の方法。
- 複数の命令を記憶している非一過性コンピュータ可読記憶媒体であって、前記複数の命令は、
側壁及び底部を露出させるために、半導体フィンの第1の部分を除去するプロセスであって、前記半導体フィンの第2の部分はゲート電極構造の下方に配置されている、半導体フィンの第1の部分を除去するプロセスと、
エピタキシャル堆積プロセスにより、前記側壁及び前記底部にヒ素がドープされたシリコン層を形成するプロセスと、
前記半導体フィンの第2の部分にヒ素をドープしながら、前記ヒ素がドープされたシリコン層にソース/ドレイン領域を形成するプロセスと
を実行するように、処理システムの構成要素を制御する命令を含む、非一過性コンピュータ可読記憶媒体。 - 前記半導体フィンの第1の部分の除去は、異方性エッチングプロセスによって行われる、請求項16に記載の非一過性コンピュータ可読記憶媒体。
- 前記エピタキシャル堆積プロセス中のチャンバ圧力が、1Torrから600Torrの範囲である、請求項16に記載の非一過性コンピュータ可読記憶媒体。
- 前記エピタキシャル堆積プロセス中の堆積温度が、500℃から700℃の範囲である、請求項18に記載の非一過性コンピュータ可読記憶媒体。
- 前記ヒ素がドープされたシリコン層の形成中及び/又は前記ソース/ドレイン領域の形成中に前記半導体フィンの第2の部分をドープすることを更に含む、請求項19に記載の非一過性コンピュータ可読記憶媒体。
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