JP7321403B1 - 電磁波検出器及び電磁波検出器アレイ - Google Patents
電磁波検出器及び電磁波検出器アレイ Download PDFInfo
- Publication number
- JP7321403B1 JP7321403B1 JP2023524448A JP2023524448A JP7321403B1 JP 7321403 B1 JP7321403 B1 JP 7321403B1 JP 2023524448 A JP2023524448 A JP 2023524448A JP 2023524448 A JP2023524448 A JP 2023524448A JP 7321403 B1 JP7321403 B1 JP 7321403B1
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- Japan
- Prior art keywords
- electromagnetic wave
- layer
- dimensional material
- material layer
- wave detector
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021201911 | 2021-12-13 | ||
| JP2021201911 | 2021-12-13 | ||
| PCT/JP2022/044887 WO2023112770A1 (ja) | 2021-12-13 | 2022-12-06 | 電磁波検出器及び電磁波検出器アレイ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023112770A1 JPWO2023112770A1 (https=) | 2023-06-22 |
| JP7321403B1 true JP7321403B1 (ja) | 2023-08-04 |
| JPWO2023112770A5 JPWO2023112770A5 (https=) | 2023-11-15 |
Family
ID=86774286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023524448A Active JP7321403B1 (ja) | 2021-12-13 | 2022-12-06 | 電磁波検出器及び電磁波検出器アレイ |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7321403B1 (https=) |
| CN (1) | CN118369775A (https=) |
| WO (1) | WO2023112770A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7603892B1 (ja) * | 2023-11-20 | 2024-12-20 | 三菱電機株式会社 | ガス検出器及びガス検出器アレイ |
| WO2025163982A1 (ja) * | 2024-01-31 | 2025-08-07 | 太陽誘電株式会社 | 光センサおよび光センサの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160305824A1 (en) * | 2013-12-05 | 2016-10-20 | National University Of Singapore | Pyroelectric detector using graphene electrode |
| CN107342345A (zh) * | 2017-06-27 | 2017-11-10 | 重庆大学 | 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管 |
| WO2021002070A1 (ja) * | 2019-07-04 | 2021-01-07 | 三菱電機株式会社 | 電磁波検出器 |
-
2022
- 2022-12-06 JP JP2023524448A patent/JP7321403B1/ja active Active
- 2022-12-06 CN CN202280081335.3A patent/CN118369775A/zh active Pending
- 2022-12-06 WO PCT/JP2022/044887 patent/WO2023112770A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160305824A1 (en) * | 2013-12-05 | 2016-10-20 | National University Of Singapore | Pyroelectric detector using graphene electrode |
| CN107342345A (zh) * | 2017-06-27 | 2017-11-10 | 重庆大学 | 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管 |
| WO2021002070A1 (ja) * | 2019-07-04 | 2021-01-07 | 三菱電機株式会社 | 電磁波検出器 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7603892B1 (ja) * | 2023-11-20 | 2024-12-20 | 三菱電機株式会社 | ガス検出器及びガス検出器アレイ |
| WO2025163982A1 (ja) * | 2024-01-31 | 2025-08-07 | 太陽誘電株式会社 | 光センサおよび光センサの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023112770A1 (ja) | 2023-06-22 |
| JPWO2023112770A1 (https=) | 2023-06-22 |
| CN118369775A (zh) | 2024-07-19 |
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