JP7321403B1 - 電磁波検出器及び電磁波検出器アレイ - Google Patents

電磁波検出器及び電磁波検出器アレイ Download PDF

Info

Publication number
JP7321403B1
JP7321403B1 JP2023524448A JP2023524448A JP7321403B1 JP 7321403 B1 JP7321403 B1 JP 7321403B1 JP 2023524448 A JP2023524448 A JP 2023524448A JP 2023524448 A JP2023524448 A JP 2023524448A JP 7321403 B1 JP7321403 B1 JP 7321403B1
Authority
JP
Japan
Prior art keywords
electromagnetic wave
layer
dimensional material
material layer
wave detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023524448A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023112770A5 (https=
JPWO2023112770A1 (https=
Inventor
昌一郎 福島
政彰 嶋谷
新平 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2023112770A1 publication Critical patent/JPWO2023112770A1/ja
Application granted granted Critical
Publication of JP7321403B1 publication Critical patent/JP7321403B1/ja
Publication of JPWO2023112770A5 publication Critical patent/JPWO2023112770A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
JP2023524448A 2021-12-13 2022-12-06 電磁波検出器及び電磁波検出器アレイ Active JP7321403B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021201911 2021-12-13
JP2021201911 2021-12-13
PCT/JP2022/044887 WO2023112770A1 (ja) 2021-12-13 2022-12-06 電磁波検出器及び電磁波検出器アレイ

Publications (3)

Publication Number Publication Date
JPWO2023112770A1 JPWO2023112770A1 (https=) 2023-06-22
JP7321403B1 true JP7321403B1 (ja) 2023-08-04
JPWO2023112770A5 JPWO2023112770A5 (https=) 2023-11-15

Family

ID=86774286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023524448A Active JP7321403B1 (ja) 2021-12-13 2022-12-06 電磁波検出器及び電磁波検出器アレイ

Country Status (3)

Country Link
JP (1) JP7321403B1 (https=)
CN (1) CN118369775A (https=)
WO (1) WO2023112770A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7603892B1 (ja) * 2023-11-20 2024-12-20 三菱電機株式会社 ガス検出器及びガス検出器アレイ
WO2025163982A1 (ja) * 2024-01-31 2025-08-07 太陽誘電株式会社 光センサおよび光センサの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160305824A1 (en) * 2013-12-05 2016-10-20 National University Of Singapore Pyroelectric detector using graphene electrode
CN107342345A (zh) * 2017-06-27 2017-11-10 重庆大学 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管
WO2021002070A1 (ja) * 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160305824A1 (en) * 2013-12-05 2016-10-20 National University Of Singapore Pyroelectric detector using graphene electrode
CN107342345A (zh) * 2017-06-27 2017-11-10 重庆大学 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管
WO2021002070A1 (ja) * 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7603892B1 (ja) * 2023-11-20 2024-12-20 三菱電機株式会社 ガス検出器及びガス検出器アレイ
WO2025163982A1 (ja) * 2024-01-31 2025-08-07 太陽誘電株式会社 光センサおよび光センサの製造方法

Also Published As

Publication number Publication date
WO2023112770A1 (ja) 2023-06-22
JPWO2023112770A1 (https=) 2023-06-22
CN118369775A (zh) 2024-07-19

Similar Documents

Publication Publication Date Title
US10784394B2 (en) Electromagnetic wave detector and electromagnetic wave detector array
US11876141B2 (en) Electronic device using graphene, manufacturing method for the device, and electromagnetic wave detector including the device
JP6884288B1 (ja) 電磁波検出器
CN115699338B (zh) 电磁波检测器以及电磁波检测器阵列
CN114846628B (zh) 电磁波检测器以及电磁波检测器集合体
JP7499857B2 (ja) 電磁波検出器および電磁波検出器集合体
JP7345593B2 (ja) 電磁波検出器および電磁波検出器アレイ
JP7399361B2 (ja) 電磁波検出器及び電磁波検出器アレイ
JP7433533B1 (ja) 電磁波検出器および電磁波検出器アレイ
JP7321403B1 (ja) 電磁波検出器及び電磁波検出器アレイ
CN119072791A (zh) 电磁波检测器以及电磁波检测器阵列
JP7740896B2 (ja) 電磁波検出器および電磁波検出器集合体
JP7341373B1 (ja) 電磁波検出器、電磁波検出器アレイ及び画像センサ
WO2023181593A1 (ja) 電磁波検出器、電磁波検出器アレイ及び画像センサ
JP7562054B1 (ja) 電磁波検出器及び電磁波検出器アレイ
JP7603892B1 (ja) ガス検出器及びガス検出器アレイ
CN120130142A (zh) 电磁波检测器和电磁波检测器集合体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230420

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20230420

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230627

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230725

R150 Certificate of patent or registration of utility model

Ref document number: 7321403

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150