CN118369775A - 电磁波检测器和电磁波检测器阵列 - Google Patents

电磁波检测器和电磁波检测器阵列 Download PDF

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Publication number
CN118369775A
CN118369775A CN202280081335.3A CN202280081335A CN118369775A CN 118369775 A CN118369775 A CN 118369775A CN 202280081335 A CN202280081335 A CN 202280081335A CN 118369775 A CN118369775 A CN 118369775A
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CN
China
Prior art keywords
electromagnetic wave
layer
wave detector
dimensional material
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280081335.3A
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English (en)
Chinese (zh)
Inventor
福岛昌一郎
岛谷政彰
小川新平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN118369775A publication Critical patent/CN118369775A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

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  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CN202280081335.3A 2021-12-13 2022-12-06 电磁波检测器和电磁波检测器阵列 Pending CN118369775A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021201911 2021-12-13
JP2021-201911 2021-12-13
PCT/JP2022/044887 WO2023112770A1 (ja) 2021-12-13 2022-12-06 電磁波検出器及び電磁波検出器アレイ

Publications (1)

Publication Number Publication Date
CN118369775A true CN118369775A (zh) 2024-07-19

Family

ID=86774286

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280081335.3A Pending CN118369775A (zh) 2021-12-13 2022-12-06 电磁波检测器和电磁波检测器阵列

Country Status (3)

Country Link
JP (1) JP7321403B1 (https=)
CN (1) CN118369775A (https=)
WO (1) WO2023112770A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025109660A1 (ja) * 2023-11-20 2025-05-30 三菱電機株式会社 ガス検出器及びガス検出器アレイ
WO2025163982A1 (ja) * 2024-01-31 2025-08-07 太陽誘電株式会社 光センサおよび光センサの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015084267A1 (en) * 2013-12-05 2015-06-11 National University Of Singapore Pyroelectric detector using graphene electrode
CN107342345B (zh) * 2017-06-27 2019-05-21 重庆大学 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管
CN114041210B (zh) * 2019-07-04 2024-07-12 三菱电机株式会社 电磁波检测器

Also Published As

Publication number Publication date
WO2023112770A1 (ja) 2023-06-22
JPWO2023112770A1 (https=) 2023-06-22
JP7321403B1 (ja) 2023-08-04

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