JP7261936B2 - Bonding method, bonded semiconductor device and semiconductor member - Google Patents

Description

The present invention relates to a bonding method, a bonded semiconductor device and a semiconductor member, and more particularly to a bonding method and the like for manufacturing a bonded semiconductor device by bonding a first metal member and a second metal member to a semiconductor member.

The applicant has disclosed a technique of joining a ceramic member or the like and a metal member by sound energy using a joining material, as described in Patent Documents 1 and 2, for example.

JP 2017-039169 A JP 2019-058910 A

However, these were to join one face.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a bonding method or the like for bonding a plurality of metal members to a semiconductor member using sound energy.

A first aspect of the present invention is a bonding method for manufacturing a bonded semiconductor device by bonding a first metal member and a second metal member to a semiconductor member, wherein the semiconductor member has at least a first surface and a second surface. wherein the bonding device utilizes sound energy to bond the first metal member and the second metal member to the first surface and the second surface of the semiconductor member, respectively, to form a bonded semiconductor device Including the joint step to create.

A second aspect of the present invention is the bonding method according to the first aspect, wherein in the bonding step, a bonding device utilizes sound energy to bond the first surface and the second surface of the semiconductor member, respectively. The first metal member and the second metal member are joined by a first joining member and a second joining member, and the first joining member after joining and/or the second joining after joining with the first metal member A bonded semiconductor device is produced in which current is conducted between the member and/or the second metal member.

A third aspect of the present invention is the bonding method of the first or second aspect, wherein the semiconductor member includes one semiconductor chip, or the semiconductor member includes both the first surface and the second surface. It includes a plurality of semiconductor chips bonded on different surfaces, and the plurality of semiconductor chips are bonded in the bonding step or bonded by a process different from the bonding step.

A fourth aspect of the present invention is the bonding method according to any one of the first to third aspects, wherein in the bonded semiconductor device, the semiconductor member includes a semiconductor chip having an electrode, and the electrode At least part of the first metal member, the second metal member, the first joining member for joining the first metal member, and the second joining member for joining the second metal member are energized.

A fifth aspect of the present invention is the bonding method according to any one of the first to fourth aspects, wherein the semiconductor chip included in the semiconductor member is a SiC chip and/or a Si chip, and the first metal member The first joining member for joining the and the second joining member for joining the second metal member are made of aluminum and/or copper.

A sixth aspect of the present invention is the bonding method according to any one of the first to fifth aspects, wherein there are a plurality of the semiconductor members, and in the bonding step, the bonding apparatus is configured to connect the semiconductor members to the semiconductor members. A process of bonding the first metal member to the first surface and/or a process of bonding the second metal member to the second surface of each of the semiconductor members are collectively performed.

A seventh aspect of the present invention is the joining method according to the sixth aspect, wherein at least a part of the plurality of semiconductor members is joined with a first joining member for joining the first metal member after joining. Electricity is applied to a second joining member for joining the second metal member later.

An eighth aspect of the present invention is the bonding method according to any one of the first to seventh aspects, wherein in the bonding step, the bonding device utilizes sound energy to form the fourth semiconductor member of the second semiconductor member. A third metal member and the second metal member are joined to the surface and the third surface, respectively.

A ninth aspect of the present invention is a bonded semiconductor device comprising a semiconductor member, a first metal member, and a second metal member, wherein the first surface of the semiconductor member and the first metal member form a first bond. The second surface of the semiconductor member and the second metal member are joined by a second joining member, and current is passed between the first joining member and the second joining member.

A tenth aspect of the present invention is the bonded semiconductor device according to the ninth aspect, wherein the semiconductor member includes one semiconductor chip, or the semiconductor member includes both the first surface and the second surface. It contains multiple semiconductor chips bonded on different sides.

An eleventh aspect of the present invention is the bonded semiconductor device according to the ninth or tenth aspect, wherein there are a plurality of semiconductor members, and at least a portion of the plurality of semiconductor members is the first semiconductor member after bonding. Electricity is conducted between the first joining member on the surface and the second joining member on the second surface after joining.

A twelfth aspect of the present invention is the junction semiconductor device according to any one of the ninth to eleventh aspects, comprising a second semiconductor member and a third metal member, wherein the third surface of the second semiconductor member and the The second metal member is bonded, and the fourth surface of the second semiconductor member and the third metal member are bonded.

A thirteenth aspect of the present invention is a semiconductor member having a first surface and a second surface, wherein the first surface and the second surface are respectively provided with a first bonding member and a second bonding member for bonding treatment. A joint member is present and conducts electricity between the first joint member and the second joint member.

In addition, in the bonding step of the present invention, the bonding process for the first surface and the bonding process for the second surface may be performed simultaneously or separately. The joining treatment of the first, second, third and fourth surfaces may be performed simultaneously or separately.

According to each aspect of the present invention, a plurality of metal members are bonded to a plurality of surfaces of a semiconductor member by sound energy (for example, sonic vibration (less than 20 kHz), ultrasonic vibration (20 kHz or more)) using a bonding member. can do. In particular, by using sound energy, it is possible, for example, to achieve current flow between joining members on different planes.

It is a figure for demonstrating the process of creating the junction semiconductor device which concerns on embodiment of this invention. FIG. 2 is a diagram for explaining a specific example in which a power-on test was performed on the bonded semiconductor device of FIG. 1; It is a figure which shows the example of the junction semiconductor device provided with several layers based on embodiment of this invention. It is a figure showing other examples of a junction semiconductor device provided with a plurality of hierarchies concerning an embodiment of the invention in this application. 5 is a diagram for specifically explaining the junction semiconductor device of FIG. 4; FIG. 1 is a diagram showing a junction semiconductor device actually produced by the inventor; FIG. FIG. 10 is a diagram showing another junction semiconductor device actually produced by the inventor;

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, embodiment of this invention is not limited to the following examples.

FIG. 1 is a diagram for explaining the steps of fabricating a junction semiconductor device according to an embodiment of the present invention.

Referring to FIGS. 1(a) and 1(b), a first metal member 1 is, for example, a metal member for a heat sink and intended for heat radiation and heat absorption. For example, it is a Ni-plated copper plate, a copper plate, an aluminum plate, or the like.

Referring to FIGS. 1(c) and 1(d), one or more semiconductor members 3 are bonded onto the first metal member 1 using the first bonding member. The semiconductor member 3 includes a semiconductor chip, such as a Si chip or a SiC chip. The first joint member is, for example, an aluminum sheet. A first bonding member is sandwiched between the semiconductor member 3 and the first metal member 1 to perform sonic bonding between dissimilar materials in a three-dimensional structure. The semiconductor member 3 and the first metal member 1 are joined to each other by excitation of atoms only by sound energy in an ambient room temperature environment. In FIGS. 1(c) and (d), four semiconductor members 3 ₁ , 3 ₂ , 3 ₃ and 3 ₄ are collectively joined by dissolution-diffusion joining of multiple materials. (Hereinafter, the suffixes of the reference numerals may be omitted.) Incidentally, the same first joining member may be used for the plurality of semiconductor members 3, or different ones may be used.

The bonding process can be realized, for example, by a bonding apparatus using sound energy described in Patent Literatures 1 and 2 and the like. Specifically, referring to FIG. The first bonding member is interposed between the first metal member 1 and the semiconductor member 3, the pressure unit 7 applies pressure from above and below, and the resonance unit 8 vibrates using sonic vibration and/or ultrasonic vibration. By resonating with the vibration of the element 9 and vibrating in the horizontal direction, the joining process can be realized. At this time, if the SiC chip or the Si chip is likely to be damaged by direct contact with the horn or the receiving jig, an elastic body such as resin is used.

1(f) and (g), the bonding apparatus connects the second metal member 5 to the semiconductor member 3 using the second bonding member. The semiconductor member 3 has the first metal member 1 and the second metal member 5 bonded on both sides thereof. The same second bonding member may be used for a plurality of semiconductor members, or different ones may be used. This bonding process is further performed after the semiconductor member 3 and the first metal member 1 have been bonded. The inventor confirmed that this can be achieved by interposing the second bonding member between the second metal member 5 and the semiconductor member 3 and performing bonding processing using sound energy in the same manner as in FIG. 1(e).

In FIG. 1, it has been explained that the process of bonding the first metal member 1 and the second metal member 5 on both sides to the first and second surfaces located above and below the semiconductor member 3 is performed separately above and below. The inventor intervenes the first bonding member between the semiconductor member 3 and the first metal member 1 and interposes the second bonding member between the semiconductor member 3 and the second metal member 5. It was confirmed that the bonding process of both the upper and lower surfaces of the semiconductor member 3 can be performed by the apparatus performing the bonding process using sound energy. By doing this all at once, the SiC chip and the Si chip are not destroyed because the horn and the receiving jig do not come into direct contact with them, so an elastic body such as resin becomes unnecessary. In this way, the joining process of the semiconductor member 3 and the first metal member 1 and the joining process of the semiconductor member 3 and the second metal member 5 may be performed separately or at once.

A specific example of conducting an energization test will be described with reference to FIG.

An energization test performed for comparison will be described with reference to FIG. The semiconductor members 13 ₁ and 13 ₂ are SiC chips. The joining members 15 ₁ and 15 ₂ are aluminum sheets. The metal member 11 is a Ni plated Cu plate. Aluminum sputter layers 17 ₁ and 17 ₂ are formed on the upper surfaces of the semiconductor members 13 ₁ and 13 ₂ . A semiconductor member 13 1 exists between the joining member 15 ₁ and the sputtered aluminum layer 17 ₁ and metal member ₁₁ . In this case, no current was passed between the sputtered aluminum layer 17 ₁ and the metal member 11 .

With reference to FIG. 2(b), an application structure of a specific example in which a power-on test was performed will be described. The first metal member 21 and the second metal member 25 are Ni-plated Cu plates. The two semiconductor members 23 ₁ and 23 ₂ are SiC chips. The semiconductor member 23 ₁ has the first metal member 21 and the second metal member 25 bonded on both sides using the first aluminum sheet 27 ₁ and the second aluminum sheet 29 ₁ , respectively. The semiconductor member 23 ₂ has the first metal member 21 and the second metal member 25 bonded on both sides using the first aluminum sheet 27 ₂ and the second aluminum sheet 29 ₂ , respectively.

FIG. 2(c) shows the result of an electrical test conducted by peeling off the second metal member 25. As shown in FIG. The top aluminum sheets 31 ₁ and 31 ₂ that are part of the second aluminum sheets 29 ₁ and 29 ₂ remain bonded to the semiconductor members 23 ₁ and 23 ₂ , respectively. The remaining portions 33 ₁ and 33 ₂ of the second aluminum sheets 29 ₁ and 29 ₂ remain bonded to the second metal member 25 .

As a result of conducting an electrical test, it was found that between the semiconductor member 23 ₁ and the upper aluminum sheet 31 ₁ , between the semiconductor member 23 ₁ and the first aluminum sheet 27 ₁ , and between the semiconductor member 23 ₁ and the semiconductor member 23 ₂ . did not energize. On the other hand, between the upper aluminum sheet 31 ₁ and the first aluminum sheet 27 ₁ , unlike the case of FIG. 2(a), current was applied. Similarly, electricity was applied between the top aluminum sheet 31 ₁ and the first metal member 21 and between the top aluminum sheet 31 ₁ and the top aluminum sheet 31 ₂ .

In this way, by joining the first metal member and the second metal member to each of the first and second surfaces, which are different surfaces of the SiC chip, using sound energy using a solid aluminum sheet, Electricity was detected in spite of the presence of the SiC chip between the aluminum sheet on the first surface and the aluminum sheet on the second surface. Even with a Si chip, a similar energization result was obtained by joining a plurality of metal members with sound energy using a pure aluminum sheet.

Depending on the combination of the materials of the bonding member and the semiconductor member, even if bonding using sound energy is performed as in the case of aluminum sheets, there may be a case where electricity cannot be obtained through the semiconductor member. For example, in experiments conducted by the inventor at the present time, both Si chips and SiC chips have been confirmed to have good bondability and conductivity when solid aluminum sheets are used. Bondability and electrical conductivity were also observed in the copper sheet. On the other hand, platinum sheets have good bonding properties, but their electrical conductivity has not been confirmed at present. However, it should be noted that this experiment of the inventors does not deny conductivity when platinum is used. For example, for a plurality of SiC chips, aluminum sheets are used for some SiC chips, and platinum sheets are used for other SiC chips, and a similar bonding process is performed to obtain a SiC chip using aluminum sheets. It is shown that a bonding process can be realized in which the chip obtains conductivity and the SiC chip using the platinum sheet does not obtain conductivity. Similarly, by using a sputtered layer or changing bonding conditions such as sound energy, it is possible to obtain conductivity in some of the multiple SiC chips and not in the rest of the SiC chips. is.

In this way, for example, when a plurality of semiconductor members are present, all the semiconductor members are separated between the first joining member and the second joining member in a state where the first metal member and/or the second metal member are peeled off. may be energized in all the semiconductor members, or may be energized in some semiconductor members and not energized in other semiconductor members.

FIG. 3 shows an example of a junction semiconductor device with multiple levels. In FIG. 3, semiconductor member 108 ₁ includes semiconductor chips 103 ₁ and 104 ₁ , and semiconductor member 108 ₂ includes semiconductor chips 103 ₂ and 104 ₂ . In FIG. 3, a plurality of semiconductor chips exist above and below each semiconductor member.

The first metal member _{101 is bonded to the lower surface of the semiconductor chip 103 1 positioned} below the semiconductor member 108 1 via the first bonding member 109 ₁ . The semiconductor chip 104 ₁ located above the semiconductor member 108 ₁ has its upper surface joined to the second metal member 107 via the second joining member 113 ₁ . The upper surface of the semiconductor chip 103 ₁ and the lower surface of the semiconductor chip 104 ₁ are joined via the third joint member 111 ₁ .

The first metal member 101 is bonded to the lower surface of the semiconductor chip 103 ₂ positioned below the semiconductor member 108 ₂ via _the first bonding member 109 2 . The second metal member 107 is bonded to the upper surface of the semiconductor chip 104 ₂ positioned above the semiconductor member 108 2 via _the second bonding member 113 ₂ . The upper surface of the semiconductor chip 103 ₂ and the lower surface of the semiconductor chip 104 ₂ are joined via the third joint member 111 ₂ .

The bonding processes on the surfaces of the semiconductor chips 103 ₁ , 104 ₁ , 103 ₂ and 104 ₂ may be performed simultaneously or separately.

Electrodes 105 ₁ and 105 ₃ are formed on the semiconductor chip 104 ₁ . Electrodes 105 ₂ and 105 ₄ are formed on the semiconductor chip 104 ₂ .

In the experiment, SiC chips were used as the semiconductor chips 103 ₁ , 103 ₂ , 104 ₁ and 104 ₂ .

In the first experiment, the first metal member 101 and the second metal member 107 were Ni-plated copper plates, the first joint member 109, the second joint member 113, and the third joint member 111 were aluminum sheets, and the electrode 105 was made of aluminum. This is the case when it is an electrode. FIGS. 3(c) and 3(d) are a cross-sectional view and an enlarged view of the actually produced one. In this case, between the first metal member 101 and the second metal member 107, between the first metal member 101 and the electrode 105 ₁ , between the second metal member 107 and the electrode 105 ₁ , and between the electrode 105 ₃ and the electrode 105 I confirmed the electricity between ₂ . On the other hand, between the semiconductor chip 103 ₁ and the first metal member 101, between the semiconductor chip 103 ₁ and the second metal member 107, between the semiconductor chip 103 ₁ and the electrode 105 ₁ , between the semiconductor chips 103 ₁ and 103 ₂ Couldn't confirm power supply.

In the next experiment, the first metal member 101 and the second metal member 107 were aluminum plates, the first joint member 109, the second joint member 113, and the third joint member 111 were aluminum sheets, and the electrode 105 was an aluminum electrode. is the case. In this case, similarly, between the first metal member 101 and the second metal member 107, between the first metal member 101 and the electrode 105 ₁ , between the second metal member 107 and the electrode 105 ₁ and between the electrode 105 Electricity was confirmed between ₃ and electrode 105 ₂ . On the other hand, between the semiconductor chip 103 ₁ and the first metal member 101, between the semiconductor chip 103 ₁ and the second metal member 107, between the semiconductor chip 103 ₁ and the electrode 105 ₁ , between the semiconductor chips 103 ₁ and 103 ₂ Couldn't confirm power supply.

Thus, even if the semiconductor chip itself does not conduct electricity, electricity can be obtained by providing the electrodes on the semiconductor chip.

FIG. 4 shows another example of a junction semiconductor device with multiple layers. For example, in FIGS. 1(f) and 1(g), the second metal member 5 is joined to the semiconductor member 3 joined to the first metal member 1. As shown in FIG. A bonded semiconductor device having a plurality of layers can be produced by bonding a semiconductor member to the second metal member 5 by a similar bonding process, and further bonding a metal member.

Referring to FIG. 4(a), the first metal member 41 is a member intended for heat dissipation and heat absorption. For example, it is a Ni-plated copper plate, a copper plate, or the like.

Referring to FIG. 4B, one or more semiconductor members 43 are bonded onto the first metal member 41 using the first bonding member. The semiconductor member 43 is, for example, a SiC chip or a Si chip. The first joint member is, for example, an aluminum sheet. Acoustic bonding between dissimilar materials having a three-dimensional structure in which the first bonding member is sandwiched between the semiconductor member 43 and the first metal member 41 is performed. The semiconductor member 43 and the first metal member 41 are jointed by the atoms being excited only by the sound energy in the ambient temperature environment. In FIG. 4B, four semiconductor members 43 ₁ , 43 ₂ , 43 ₃ and 43 ₄ are collectively joined by dissolution diffusion joining between multi-materials. It should be noted that the first bonding member may be common to a plurality of semiconductor members, or may be different.

Referring to FIG. 4(c), the second metal member 45 is connected to the semiconductor member 43 using the second joining member. The semiconductor member 43 has the first metal member 41 and the second metal member 45 bonded on both sides thereof. It should be noted that the second bonding member may be common to the plurality of semiconductor members, or may be different.

Referring to FIG. 4D, one or more semiconductor members 47 are bonded onto the second metal member 45 using the third bonding member. The semiconductor member 47 is, for example, a SiC chip, a Si chip, or the like. The third joint member is, for example, an aluminum sheet. A third bonding member is interposed between the semiconductor member 47 and the second metal member 45 to perform sonic bonding between dissimilar materials in a three-dimensional structure. The semiconductor member 47 and the second metal member 45 are joined to each other by excitation of atoms only by sound energy in an ambient room temperature environment. In FIG. 4(d), four semiconductor members 47 ₁ , 47 ₂ , 47 ₃ and 47 ₄ are collectively joined by dissolution diffusion joining between multi-materials. In addition, the third joint member may be common to a plurality of semiconductor members, or may be different.

Referring to FIG. 4(e), the third metal member 49 is connected to the semiconductor member 47 using the fourth joining member. The semiconductor member 47 has a second metal member 45 and a third metal member 49 which are joined on both sides thereof. It should be noted that the fourth bonding member may be common to a plurality of semiconductor members, or may be different.

A specific description will be given with reference to FIG.

Referring to FIG. 5A, the first metal member 51, the second metal member 55 and the third metal member 59 are, for example, a Cu plate, a Ni-plated Cu plate, or the like. The semiconductor members 53 ₁ and 53 ₂ and 57 ₁ and 57 ₂ are Si chips, SiC chips, or the like, for example.

The semiconductor member 53 ₁ has a first metal member 51 and a second metal member 55 bonded on both sides using a first bonding member 61 ₁ and a second bonding member 63 ₁ , respectively. The semiconductor member 53 ₂ has the first metal member 51 and the second metal member 55 bonded on both sides using the first bonding member 61 ₂ and the second bonding member 63 ₂ , respectively.

The semiconductor member 57 ₁ has a second metal member 55 and a third metal member 59 bonded on both sides using a third bonding member 65 ₁ and a fourth bonding member 67 ₁ , respectively. The semiconductor member 57 ₂ has a second metal member 55 and a third metal member 59 bonded on both sides using a third bonding member 65 ₂ and a fourth bonding member 67 ₂ , respectively.

The semiconductor members 53 ₁ , 53 ₂ , 57 ₁ and 57 ₂ may be joined so as not to conduct electricity entirely, or may be joined so that they all conduct electricity. It may be joined so as not to

Referring to FIG. 5(b), conventionally, the semiconductor member could not be cut with the necessary accuracy as indicated by line 71 ₁ . This imposes unnecessary restrictions on the design and additionally requires pre- and post-processing. On the other hand, the inventor has realized a highly accurate cutter (see Japanese Patent Application No. 2020-125474), and it has become possible to cut including the semiconductor member as indicated by line 71 ₂ . As a result, part or all of the pretreatment and posttreatment can be omitted, and the bonded semiconductor device can be manufactured through simple steps.

6 and 7 show a junction semiconductor device actually produced by the inventor.

FIG. 6A shows an image of the internal structure of a double-sided die bond in which heat sinks made of Ni-plated copper plates are bonded on both sides of a SiC chip. Four SiC chips (SiC Chips) 161 are a SiC package double-sided die-bonded between two Ni-plated copper plates (Nickel-plated copper plates) 163 and 165 .

FIG. 6(b) is after double-sided die-bonding by sonic bonding. FIG. 6(c) is an observation example of a cross-section of sonic double-sided bonding. FIG. 6(d) is an enlarged view of the junction of FIG. 6(c). "3DB (3D structure sound bonding) & DMB (Different Materials Bonding)" bonding is realized by layering different materials. Aluminum sheets 173 and 175 are sandwiched between the SiC chip 171 and Ni-plated copper plates (joint marked surfaces) 167 and 169 to achieve double-sided bonding of the SiC chip 171 . It can be joined only by sound energy and does not require heating of adhesives or metal pastes. The heat shock test (-50 to 600°C) was cleared, and the horizontal pressing bonding strength of each chip was 500N or more. This can be realized by normal temperature bonding in the air, the energy sources for bonding are only electricity and air, and desktop bonding is used.

FIG. 7(a) shows an image of the internal structure of double-sided die bonding in which heat sinks made of copper plates are bonded on both sides of a SiC chip. Four SiC chips (SiC Chips) 181 are double-sided die-bonded SiC packages between two copper plates (Copper plates) 183 and 185 .

FIG. 7(b) shows one surface after die bonding by sonic bonding. Four SiC chips 187 are bonded to a copper plate 189 using an aluminum sheet 191 . The SiC chip is a square with a side of 5.0 mm and a thickness t=0.35 mm. The aluminum sheet has a thickness t=100 μm. The copper plate is a rectangle of 20mm x 30mm and has a thickness t = 2mm. A copper plate 193 is overlapped and joined to the state of FIG. 7(b). FIG. 7(c) is after double-sided die-bonding by sonic bonding.

FIG. 7(d) is an observation example of a cross-section of sonic double-sided bonding. FIG. 7(e) is an enlarged view of the junction of FIG. 7(d). Aluminum sheets 191 and 195 are sandwiched between the SiC chip 187 and the copper plates 189 and 193 to achieve double-sided bonding of the SiC chip 187 . It is sonic bonding between dissimilar materials with a 3D structure, and dissolution-diffusion bonding between multiple materials in which atoms are excited and joined only by sound energy in an ambient room temperature environment. The heat shock test (-50 to 600°C) was cleared, and the horizontal pressing bonding strength of each chip was 500N or more.

1, 21, 41, 51, 81, 101 first metal member, 3, 13, 23, 43, 47, 53, 57, 108 semiconductor member, 5, 25, 45, 55, 85, 107 second metal member, 6 bonding device 7 pressure unit 8 resonance unit 9 vibrator 11 metal member 15 bonding member 17, 89 aluminum sputter layer 27 first aluminum sheet 29 second aluminum sheet 31 top aluminum sheet 33 remainder, 49, 59 third metal member, 61 first joint member, 63 second joint member, 65 third joint member, 67 fourth joint member, 71 wire, 83, 161, 171, 181, 187 SiC chip, 87 Titanium sputter layer 91, 93 Aluminum sheet 103, 104 Semiconductor chip 105 Electrode 109 First joint member 111 Third joint member 113 Second joint member 163, 165, 167, 169 Ni-plated copper plate 173, 175, 191, 195 aluminum sheet, 183, 185, 189, 193 copper plate

Claims (5)

A bonding method for manufacturing a bonded semiconductor device by bonding a first metal member and a second metal member to a semiconductor member,
The semiconductor member is a semiconductor chip,
The semiconductor chip is a SiC chip or a Si chip,
a bonding apparatus utilizing sound energy to bond the first metal member and the second metal member to different surfaces of the semiconductor chip to form the bonded semiconductor device;
In the bonding step, the bonding apparatus sandwiches a first bonding member between the semiconductor chip and the first metal member, sandwiches a second bonding member between the semiconductor chip and the second metal member, bonding the first metal member and the second metal member to the semiconductor chip using the sound energy;
The first joint member and the second joint member are joint members used for joining a plurality of materials using the sound energy,
In the junction semiconductor device,
no current is passed between the first bonding member and the semiconductor chip itself;
no current is passed between the second bonding member and the semiconductor chip itself,
The bonding method , wherein electricity is passed through the semiconductor chip between the first bonding member and the second bonding member . 2. The joining method according to claim 1, wherein said first joining member and said second joining member are metals used for joining a plurality of materials using said sound energy. the first joining member is aluminum and/or copper,
3. The joining method according to claim 1, wherein said second joining member is aluminum and/or copper. the semiconductor chip includes an electrode at a location different from a surface on which the first metal member and the second metal member are bonded;
4. The bonding method according to claim 1, wherein said electrode is electrically connected to said first metal member via said semiconductor chip in said bonded semiconductor device. The semiconductor member includes a plurality of semiconductor chips,
the plurality of semiconductor chips includes a first semiconductor chip and a second semiconductor chip ;
The semiconductor chip is a SiC chip or a Si chip,
In the bonding step, the bonding device utilizes sound energy to
bonding the first semiconductor chip and the second semiconductor chip directly or with one or more other semiconductor chips interposed therebetween;
bonding the first metal member to the first semiconductor chip with the first bonding member sandwiched between the first semiconductor chip and the first metal member;
making the bonded semiconductor device by bonding the second metal member to the second semiconductor chip with the second bonding member sandwiched between the second semiconductor chip and the second metal member;
2. The bonding method according to claim 1, wherein in said bonded semiconductor device, electricity is passed through said semiconductor member between said first metal member and said second metal member .

Images