JP7256806B2 - 恒温槽付周波数基準発振器、およびその作成方法 - Google Patents
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Description
「(周波数基準)発振器」は、本明細書においてデバイス全体を意味し、具体的には、本明細書で説明する共振器と、アクチュエータと、自動調温コントローラと、を備えるデバイス全体を意味する。
図1Aは、オーブン15内に配置された共振器11を示している。オーブン15の温度は、自動調温コントローラ13によって調整される。発振器の読取り信号は出力19において得られる。
米国出願公開特許公報第2016/0099704号
PCT出願公開特許第2012/110708号
Yunhan Chen et al.,「Ovenized Dual-Mode Clock(ODMC)Based on Highly Doped Single Crystal Silicon Resonators(高濃度ドーピング単結晶シリコン共振器に基づくオーブン加熱デュアルモードクロック(ODMC))」2016 29th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 91-94, Jan 2016
Jaakkola, A. et al.,「Piezoelectrically Transduced Single-Crystal-Silicon Plate Resonators(圧電変換式単結晶シリコンプレート共振器)」IEEE Ultrasonics Symposium, 2008. IUS 2008, 717-20, 2008
Jaakkola, Antti.,「Piezoelectrically Transduced Temperature Compensated Silicon Resonators for Timing and Frequency Reference Applications(タイミングおよび周波数基準用途のための圧電変換式温度補償シリコン共振器)」アールト大学2016年度博士論文 http://urn.fi/URN:ISBN:978-951-38-8387-4
Claims (20)
- 平均ドーピング濃度でドープされたシリコンを含む共振器素子と、
85℃以上の頂点温度において高温頂点を有する固有の周波数対温度曲線を有する共振モードで、前記共振器素子を励起するアクチュエータと、
前記共振器素子の温度を前記頂点温度に保つ自動調温コントローラと、
を備え、
前記平均ドーピング濃度は少なくとも1.1×1020cm-3であり、
前記周波数対温度曲線は2つの頂点を有し、そのうち一方は前記高温頂点である、
温度補償微小電子機械発振器。 - 前記2つの頂点のうちの他方は、85℃未満の温度における低温頂点である、請求項1に記載の発振器。
- 前記周波数対温度曲線は、前記高温頂点において、前記低温頂点における曲率の絶対値より低い曲率の絶対値を有する、請求項2に記載の発振器。
- 前記高温頂点における前記周波数対温度曲線の前記曲率の絶対値は20ppb/C2以下であり、具体的には10ppb/C2以下である、請求項3に記載の発振器。
- 前記周波数対温度曲線は、-40から+150℃の温度範囲内に厳密に2つの頂点を有する、請求項2から4のいずれかに記載の発振器。
- 前記高温頂点は局所極大である、請求項1から5のいずれかに記載の発振器。
- 前記高温頂点は局所極小である、請求項1から5のいずれかに記載の発振器。
- 前記高温頂点は、200℃以下、具体的には150℃以下、例えば130℃以下の頂点温度にある、請求項1から7のいずれかに記載の発振器。
- 前記共振器素子は、1.3×1020cm-3以上のn型ドーパント濃度を有するシリコン成形体と、
前記シリコン成形体上の圧電変換層と、
前記圧電変換層上の電極層と、を含み、
前記アクチュエータは、前記共振モードを励起するために、前記電極層と前記シリコン成形体とに電気的に接続される、
請求項1から8のいずれかに記載の発振器。 - 前記共振器素子は、縮退ドーピングされた単結晶シリコン成形体を備え、
前記発振器は、前記単結晶シリコン成形体に機能的に結合された静電変換電極を備え、
前記アクチュエータは、前記共振モードを励起するために、前記静電変換電極に電気的に接続される、
請求項1から9のいずれかに記載の発振器。 - 前記共振器素子は、面内アスペクト比が1ではないプレート素子である、請求項1から10のいずれかに記載の発振器。
- 前記共振モードは、面積伸張/幅伸張モード分枝である、請求項1から11のいずれかに記載の発振器。
- 前記共振モードは、面内屈曲、面外屈曲、または長さ伸張/ラーメモード分枝である、請求項1から12のいずれかに記載の発振器。
- 前記共振器素子はプレートまたはビームとして成形され、その形状により、前記共振モードにおける前記共振器素子に、ほぼゼロのTCF1と、前記少なくとも2つの頂点をもたらすTCF2およびTCF3特性が得られ、前記2つの頂点のうち一方は前記高温頂点である、請求項1から13のいずれかに記載の発振器。
- 前記ドープされたシリコンは[100]結晶方向を有し、前記共振器素子は、前記[100]結晶方向に対して角度を成す、少なくとも1つの主軸を有し、前記角度は0から45度、例えば1から45度である、請求項1から14のいずれかに記載の発振器。
- 前記自動調温コントローラは、前記共振器素子の発振周波数から独立して動作するように適合される、請求項1から15のいずれかに記載の発振器。
- 微小電子機械発振器を作成する方法であって、
共振器形状を選択することと、
1.1×1020cm-3以上の平均ドーピング濃度を有するドープされたシリコンを含む共振器材料を選択することと、
前記共振器形状を有する前記共振器材料を共振モードで発振させる駆動手段を選択することと、
選択された前記共振器形状、前記共振器材料、前記駆動手段、および前記共振モードにより、2つの高温頂点を有する周波数対温度曲線であって、そのうち1つが85℃以上の高い頂点温度における高温頂点である周波数対温度曲線が作成されるかを評価することと、
前記評価が肯定的である場合、前記共振器形状、前記共振器材料、および前記駆動手段を備える前記微小電子機械発振器を作成することと、を含み、
前記作成することは、前記微小電子機械発振器の共振器素子の温度を前記高い頂点温度に保つ自動調温コントローラを設けることをさらに含む、
方法。 - 前記共振器形状を選択することは、矩形プレート形状またはビーム形状を選択することを含む、請求項17に記載の方法。
- 前記共振器材料を選択することは、1.3×1020cm-3以上の平均ドーピング濃度を有するドープされたシリコンを含む第1層と、圧電材料を含む第2層とを含む、材料の積層を選択することを含む、請求項17または18に記載の方法。
- 前記共振モードは、面積伸張/幅伸張モード分枝、または面内屈曲、面外屈曲、または長さ伸張/ラーメモード分枝である、請求項17から19のいずれかに記載の方法。
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JP6567661B2 (ja) | 2014-10-03 | 2019-08-28 | テクノロギアン トゥトキムスケスクス ヴェーテーテー オイ | 温度補償されたプレート共振器 |
CN106549649B (zh) * | 2015-09-17 | 2019-07-19 | 中国科学院上海微系统与信息技术研究所 | N型重掺杂恒温控制振荡器及其恒温控制方法 |
JP6587560B2 (ja) * | 2016-02-29 | 2019-10-09 | 日本電波工業株式会社 | 恒温槽付水晶発振器 |
FI127787B (en) | 2016-07-01 | 2019-02-28 | Teknologian Tutkimuskeskus Vtt Oy | Micromechanical resonator |
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2017
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WO2016205770A1 (en) | 2015-06-19 | 2016-12-22 | Sitime Corporation | Microelectromechanical resonator |
JP2018522461A (ja) | 2015-06-19 | 2018-08-09 | サイタイム・コーポレイションSitime Corporation | 微小電気機械共振器 |
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WO2019048737A1 (en) | 2019-03-14 |
FI20175792A1 (en) | 2019-03-06 |
EP3679652A1 (en) | 2020-07-15 |
FI128032B (en) | 2019-08-15 |
EP3679652A4 (en) | 2021-06-02 |
KR20200049802A (ko) | 2020-05-08 |
JP2020532930A (ja) | 2020-11-12 |
US11190133B2 (en) | 2021-11-30 |
US20210135626A1 (en) | 2021-05-06 |
CN111052605B (zh) | 2024-01-16 |
CN111052605A (zh) | 2020-04-21 |
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