JP7243953B2 - Compositions for forming circuit board structures and insulating substrates - Google Patents

Compositions for forming circuit board structures and insulating substrates Download PDF

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JP7243953B2
JP7243953B2 JP2018168267A JP2018168267A JP7243953B2 JP 7243953 B2 JP7243953 B2 JP 7243953B2 JP 2018168267 A JP2018168267 A JP 2018168267A JP 2018168267 A JP2018168267 A JP 2018168267A JP 7243953 B2 JP7243953 B2 JP 7243953B2
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弘榮 李
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    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K1/00Printed circuits
    • H05K1/02Details
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    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
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    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/20Applications use in electrical or conductive gadgets
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0141Liquid crystal polymer [LCP]

Description

本発明は、絶縁基板を形成するための組成物及び回路板構造に関する。 The present invention relates to compositions and circuit board structures for forming insulating substrates.

コンシューマ電子製品に対して、システムインパッケージ(System in Package;SIP)技術は、主に、コスト削減と小型化の特徴を示すべきである。素子を統合するためのプラットフォームとしての基板には、2つの方向がある。その一方は、よく見られる有機材料基板又は多層プリント回路基板(Printed Wiring Board;PWB)を使用するが、他方は、シリコン基板等の無機材料基板を使用する。後者は、通常、チップ回路やプロセスに組み合わせた小型化の利点を有するが、コストが考慮指標の1つである。前者の場合、低コストの機能に加えて、高密度相互接続(High-Density Interconnection;HDI)技術のような現時の高度なプロセス技術によって、また特殊材料に組み合わせて、システムインパッケージを達成させることができる。 For consumer electronic products, System in Package (SIP) technology should mainly exhibit the features of cost reduction and miniaturization. There are two directions for the substrate as a platform for device integration. One uses common organic material substrates or printed wiring boards (PWBs), while the other uses inorganic material substrates such as silicon substrates. The latter typically has the advantage of miniaturization combined with chip circuitry and processes, but cost is one of the considerations. In the former case, in addition to the low-cost capability, it is possible to achieve system-in-package by present-day advanced process technology such as High-Density Interconnection (HDI) technology and in combination with special materials. can be done.

また、情報通信製品の高速化、高周波化につれて、無線通信ネットワーク、衛星通信機器、高出力及び広帯域製品、高速コンピュータ及びコンピュータワークステーション等の次世代製品の開発に必要な基板材料としては、高ガラス転移温度(Glass Transition Temperature;Tg)、低損失係数(Dissipation Factor;Df)及び低誘電率(Dielectric Constant;Dk)を有するものでなければならない。現在、プリント回路基板(printed circuit board;PCB)に使用される銅箔基板は、量的にも技術的にも、主にエポキシ樹脂からなるFR-4板である。しかし、FR-4は、その誘電率や損失係数等の電気的特性が既に高周波の要求を満たすことができなくなっている。従って、高誘電率を有し、低損失係数を維持することのできる基板材料が業界で必要とされている。 In addition, as the speed and frequency of information communication products increase, high glass is used as a substrate material necessary for the development of next-generation products such as wireless communication networks, satellite communication equipment, high-power and broadband products, high-speed computers and computer workstations. It must have a glass transition temperature (Tg), a low dissipation factor (Df) and a low dielectric constant (Dk). The copper foil substrates currently used for printed circuit boards (PCBs) are FR-4 boards, both quantitatively and technically, which are mainly made of epoxy resin. However, FR-4 is no longer able to satisfy high frequency requirements due to its electrical properties such as dielectric constant and loss factor. Therefore, there is a need in the industry for substrate materials that have a high dielectric constant and can maintain a low loss factor.

本発明の一態様は、絶縁基板を形成するための組成物を提供する。この組成物の組成成分を調整することで、絶縁基板の誘電定数値を制御することができる。 One aspect of the invention provides a composition for forming an insulating substrate. By adjusting the compositional components of this composition, the dielectric constant value of the insulating substrate can be controlled.

前記絶縁基板を形成するための組成物において、

Figure 0007243953000001
Figure 0007243953000002
Figure 0007243953000003
In the composition for forming the insulating substrate,
Figure 0007243953000001
Figure 0007243953000002
Figure 0007243953000003

本発明のある実施形態によれば、誘電体フィラーは、セラミック材料、変性セラミック材料、導電性粒子、変性導電性粒子、有機材料及び変性有機材料からなる群から選ばれる。 According to some embodiments of the invention, the dielectric filler is selected from the group consisting of ceramic materials, modified ceramic materials, conductive particles, modified conductive particles, organic materials and modified organic materials.

本発明のある実施形態によれば、セラミック材料は、チタン酸バリウム、チタン酸鉛、チタン酸バリウムストロンチウム(BST)、酸化チタン、酸化鉛、チタン酸ジルコン酸鉛(PZT)、ペロブスカイト立方晶構造(CaCuTi12、CCTO)及びマグネシウムニオブ酸鉛-チタン酸鉛(PMN-PT)からなる群から選ばれる。 According to an embodiment of the present invention, the ceramic material is barium titanate, lead titanate, barium strontium titanate (BST), titanium oxide, lead oxide, lead zirconate titanate (PZT), perovskite cubic structure ( CaCu 3 Ti 4 O 12 , CCTO) and lead magnesium niobate-lead titanate (PMN-PT).

本発明のある実施形態によれば、変性セラミック材料は、シリル基を含有する変性基を含む。 According to some embodiments of the invention, the modified ceramic material comprises modifying groups containing silyl groups.

本発明のある実施形態によれば、導電性粒子は、炭素類粒子及び金属粒子を含む。 According to some embodiments of the invention, the electrically conductive particles include carbonaceous particles and metal particles.

本発明のある実施形態によれば、炭素類粒子は、カーボン60(C60)、グラフェン、カーボンブラック、炭素繊維及びカーボンナノチューブ(Carbon Nanotube;CNT)からなる群から選ばれる。 According to some embodiments of the present invention, the carbonaceous particles are selected from the group consisting of carbon 60 (C 60 ), graphene, carbon black, carbon fibers and carbon nanotubes (CNT).

本発明のある実施形態によれば、金属粒子は、銀、アルミニウム、銅、ニッケル、亜鉛及び鉄からなる群から選ばれる。 According to one embodiment of the invention, the metal particles are selected from the group consisting of silver, aluminum, copper, nickel, zinc and iron.

本発明のある実施形態によれば、変性導電性粒子は、アミノ基、アニリノ基、カルボキサミド基、カルボキシル基及びヒドロキシル基からなる群から選ばれる変性基を含有する変性炭素類粒子を含む。 According to one embodiment of the present invention, the modified conductive particles comprise modified carbonaceous particles containing modifying groups selected from the group consisting of amino groups, anilino groups, carboxamide groups, carboxyl groups and hydroxyl groups.

本発明のある実施形態によれば、有機材料は、導電性ポリアニリン及び銅フタロシアニン(CuPc)からなる群から選ばれる。 According to one embodiment of the invention, the organic material is selected from the group consisting of conductive polyaniline and copper phthalocyanine (CuPc).

本発明のある実施形態によれば、変性有機材料は、スルホン酸基、ヒドロキシル基、エーテル基、アミノ基及び(p-クロロメチルベンゼン)ビニル基からなる群から選ばれる変性基を含む。 According to one embodiment of the invention, the modified organic material comprises modifying groups selected from the group consisting of sulfonic acid groups, hydroxyl groups, ether groups, amino groups and (p-chloromethylbenzene)vinyl groups.

本発明の別の態様は、回路板構造を提供することにある。この回路板構造は、少なくとも1つの絶縁基板と、少なくとも1つの再配線層と、を備える。この少なくとも1つの絶縁基板は、絶縁基板を形成するための上記のような組成物を含む。この少なくとも1つの再配線層は、絶縁基板に位置する。 Another aspect of the invention is to provide a circuit board structure. The circuit board structure comprises at least one insulating substrate and at least one redistribution layer. The at least one insulating substrate comprises a composition as described above for forming an insulating substrate. The at least one redistribution layer is located on the insulating substrate.

本発明のある実施形態によれば、この回路板構造は、絶縁基板と再配線層との間に位置する接着層を更に備える。 According to an embodiment of the invention, the circuit board structure further comprises an adhesive layer located between the insulating substrate and the redistribution layer.

本発明のある実施形態によれば、接着層は、フッ素樹脂、ポリフェニレンエーテル樹脂、アラルキルエポキシ樹脂、エポキシ樹脂、フェノキシ樹脂、アクリル樹脂、ウレタン樹脂、シリコーンゴム系樹脂、ポリ-p-キシレン系樹脂、液晶ポリマー、ビスマレイミド系樹脂及びポリイミド樹脂からなる群から選ばれる。 According to an embodiment of the present invention, the adhesive layer is composed of fluorine resin, polyphenylene ether resin, aralkyl epoxy resin, epoxy resin, phenoxy resin, acrylic resin, urethane resin, silicone rubber resin, poly-p-xylene resin, It is selected from the group consisting of liquid crystal polymers, bismaleimide resins and polyimide resins.

下記添付図面の説明は、本発明の上記及び他の目的、特徴、メリット及び実施形態をより分かりやすくするためのものである。 The following description of the accompanying drawings is intended to make these and other objects, features, advantages and embodiments of the present invention more comprehensible.

図1は本発明の複数の実施形態による回路板構造を示す断面模式図である。FIG. 1 is a cross-sectional schematic diagram showing a circuit board structure according to several embodiments of the present invention. 図2は本発明の複数の実施形態による回路板構造を示す断面模式図である。FIG. 2 is a cross-sectional schematic diagram showing a circuit board structure according to several embodiments of the present invention. 図3は本発明の複数の実施形態による回路板構造を示す断面模式図である。FIG. 3 is a cross-sectional schematic diagram showing a circuit board structure according to several embodiments of the present invention. 図4は本発明の複数の実施形態による回路板構造を示す断面模式図である。FIG. 4 is a cross-sectional schematic diagram showing a circuit board structure according to several embodiments of the present invention.

本発明の内容についての記述をより詳細且つ完全にするために、以下、本発明の実施態様と具体的な実施例について説明的な叙述を提出するが、これは本発明の具体的な実施例を実施又は運用する唯一の形式ではない。下記で開示する各実施例において、有益な場合には互いに組み合わせ又は取り替わってもよいし、更なる記載又は説明をせずに、1つの実施例において他の実施例を加えてもよい。 In order to make the description of the content of the present invention more detailed and complete, the following provides an illustrative description of the embodiments and specific examples of the present invention, which are specific examples of the present invention. is not the only form of implementation or operation of Each of the embodiments disclosed below may be combined or replaced with each other where beneficial, and may be added to other embodiments in one embodiment without further description or explanation.

本開示内容の記述をより詳細化し充実させるためには、添付図面及び以下に述べられる各種の実施形態を参考することができ、図面において同じ番号は、同じ又は類似の素子を示す。 For a more detailed and complete description of this disclosure, reference may be made to the accompanying drawings and the various embodiments described below, in which like numbers indicate the same or similar elements.

本明細書で使用される用語は、一般的に、その通常の意味を表し、実践者を更にガイドするために、以下、特別な用語について具体的に定義する。便宜上、ある用語を例えばイタリック体及び/又は引用符等によって特別に標示することがある。その用語は、特別に標示されるかにかかわらず、その範囲や意味が如何なる影響も受けず、通常の用語の範囲や意味と同じである。同じことが1以上の形態で説明されてもよいことは、理解される。従って、本明細書では、1つ又は複数の用語に用いられる代替の言語と同義語が本明細書で使用されることがあるが、その用語が本明細書で論じられる内容において如何なる特殊の意味を有することを示唆することを意図するものではない。ある用語の同義語が使用されるが、1つ又は複数の同義語を繰り返し使用しても、他の同義語の使用が妨げられることはない。本明細書で論じられる如何なる例も、説明するためのものであり、如何なる形態により範囲や意義を限定することを意図するものではない。同様に、本発明は、本明細書に記載された各種の実施形態に限定されない。 The terms used herein generally represent their ordinary meaning, and specific definitions of specific terms are provided below to further guide the practitioner. For convenience, certain terms may be specially labeled, such as by italics and/or quotation marks. Such terms are not in any way affected by their scope and meaning, regardless of whether they are specifically labeled, and have the same scope and meaning as that of ordinary terms. It is understood that the same may be described in one or more forms. Accordingly, alternative language and synonyms for one or more terms may be used herein, but no particular meaning is given to the term in the context discussed herein. is not intended to imply that While synonyms are used for a term, repeated use of one or more synonyms does not preclude use of other synonyms. Any examples discussed herein are illustrative and not intended to limit the scope or significance in any way. Likewise, the invention is not limited to the various embodiments described herein.

内容に特に明記されない限り、本明細書で使用される単数の用語は、複数の指示対象を含む。「一実施形態」のような特定の指示を参照することで、本開示の実施形態の少なくとも一方において、特定の特徴、構造や特性を示すので、各所の「一実施形態において」のような用語が特別な指示として現われる場合、同じ実施形態を参照する必要がなく、更に、1つ又は複数の実施形態では、これらの特定な特徴、構造や特性を状況に応じて適宜に組み合わせてもよい。 As used herein, singular terms include plural referents unless the content clearly dictates otherwise. References to specific instructions such as "in one embodiment" indicate certain features, structures or characteristics in at least one of the embodiments of the present disclosure, and thus terms such as "in one embodiment" are used everywhere. appearing as specific indications need not refer to the same embodiment, and furthermore, one or more embodiments may combine these particular features, structures and characteristics as appropriate.

本発明の一態様は、絶縁基板を形成するための組成物において、下記式(1)の構造の繰り返し単位を有する100重量部の変性液晶ポリマーと、0.5重量部~85重量部の誘電体フィラーと、を含む組成物を提供する。

Figure 0007243953000004
One aspect of the present invention is a composition for forming an insulating substrate, in which 100 parts by weight of a modified liquid crystal polymer having a repeating unit having the structure of the following formula (1) and 0.5 to 85 parts by weight of a dielectric and a body filler.
Figure 0007243953000004

Figure 0007243953000005
Figure 0007243953000005

Figure 0007243953000006
Figure 0007243953000006

Figure 0007243953000007
Figure 0007243953000007
Figure 0007243953000008
Figure 0007243953000008

本発明の各種の実施例によれば、上記Arのいずれか1つは、任意のY及び任意のXと互いに組み合わせてよい。異なる組み合わせにおいて、同じ又は異なる技術的効果を有することがある。 According to various embodiments of the present invention, any one of Ar above may be combined with any Y and any X together. Different combinations may have the same or different technical effects.

より詳しくは、上記の変性液晶ポリマーは、特定の溶剤に溶解して、変性液晶ポリマー溶液を形成することができる。例として、この特定の溶剤は、N-メチル-2-ピロリドン、N,N-ジメチルアセトアミド、γ-ブチロラクトン、ジメチルホルムアミド、2-ブトキシエタノール及び2-エトキシエタノールからなる群から選ばれてよい。従来の液晶ポリマーと比べると、可溶性液晶ポリマーの特定溶剤への溶解度はより高い。理解すべきなのは、変性液晶ポリマー溶液は、コーティング等の類似なプロセスによって支持プレート上に形成し、また加熱プロセスによって溶剤を乾燥するまで蒸発させて変性液晶ポリマーを含む絶縁基板を形成することができる。 More specifically, the above modified liquid crystal polymer can be dissolved in a particular solvent to form a modified liquid crystal polymer solution. By way of example, this particular solvent may be selected from the group consisting of N-methyl-2-pyrrolidone, N,N-dimethylacetamide, γ-butyrolactone, dimethylformamide, 2-butoxyethanol and 2-ethoxyethanol. Compared with conventional liquid crystal polymers, the solubility of soluble liquid crystal polymers in certain solvents is higher. It should be understood that the modified liquid crystalline polymer solution can be formed on a support plate by a similar process such as coating and a heating process to evaporate the solvent until dry to form an insulating substrate containing the modified liquid crystalline polymer. .

例として、変性液晶ポリマー溶液は、上記溶剤の1つ及び芳香族液晶ポリエステルを含む芳香族液晶ポリエステル溶液であってもよい。芳香族液晶ポリエステルの固形分の重量百分率は、1wt%~85wt%であり、例えば、5wt%、15wt%、25wt%、35wt%、45wt%、55wt%、65wt%又は75wt%であってもよい。芳香族液晶ポリエステルの固形分の重量百分率がある数値よりも小さい場合、例えば1wt%よりも小さい場合、絶縁基板を必要な厚さにするために、複数回のコーティングプロセスが必要であり、かなり時間やコストがかかる。逆に、芳香族液晶ポリエステルの固形分の重量百分率がある数値よりも大きい場合、例えば85wt%よりも大きい場合、芳香族液晶ポリエステルの固形分は、溶剤に溶解しにくく糊化(gelatinization)が生じる。具体的には、芳香族液晶ポリエステルは、以下のような繰り返し単位を有し、

Figure 0007243953000009
Arは、1,4-フェニレン基、1,3-フェニレン基、2,6-ナフタレン基又は4,4′-ビフェニレン基であり、Yは、-O-又は-NH-であり、且つXは、カルボキサミド基、イミド基、アミジノ基、アミノカルボニルアミノ基、アミノノチカルボニル基、アミノカルボニルオキシ基、アミノスルホニル基、アミノスルホニルオキシ基、アミノスルホニルアミノ基、カルボキシルエステル、(カルボキシルエステル)アミノ基、(アルコキシカルボニル)オキシ基、アルコキシカルボニル基、ヒドロキシアミノ基、アルコキシアミノ基、シアナト基、イソシアナト基又はそれらの組み合わせである。 By way of example, the modified liquid crystalline polymer solution may be an aromatic liquid crystalline polyester solution comprising one of the above solvents and an aromatic liquid crystalline polyester. The weight percentage of the solid content of the aromatic liquid crystalline polyester is 1 wt% to 85 wt%, and may be, for example, 5 wt%, 15 wt%, 25 wt%, 35 wt%, 45 wt%, 55 wt%, 65 wt% or 75 wt%. . If the weight percentage of the solid content of the aromatic liquid crystalline polyester is less than a certain value, such as less than 1 wt%, multiple coating processes are required to achieve the required thickness of the insulating substrate, which can take a considerable amount of time. or costly. Conversely, when the weight percentage of the solid content of the aromatic liquid crystalline polyester is greater than a certain value, for example, greater than 85 wt%, the solid content of the aromatic liquid crystalline polyester is difficult to dissolve in the solvent and gelatinization occurs. . Specifically, the aromatic liquid crystalline polyester has the following repeating units,
Figure 0007243953000009
Ar is a 1,4-phenylene group, 1,3-phenylene group, 2,6-naphthalene group or 4,4′-biphenylene group, Y is —O— or —NH—, and X is , carboxamide group, imide group, amidino group, aminocarbonylamino group, aminonoticarbonyl group, aminocarbonyloxy group, aminosulfonyl group, aminosulfonyloxy group, aminosulfonylamino group, carboxyl ester, (carboxyl ester) amino group, ( alkoxycarbonyl)oxy group, alkoxycarbonyl group, hydroxyamino group, alkoxyamino group, cyanato group, isocyanato group, or a combination thereof.

誘電体フィラーの含有量がある数値、例えば85重量部よりも大きい場合、誘電体フィラーの間は互いに連通するので、材料が絶縁体から導電体に変わり、材料の誘電率や導電率が激しく変わり、更に絶縁基板としての性能を失う。複数の実施形態において、誘電体フィラーは、セラミック材料、変性セラミック材料、導電性粒子、変性導電性粒子、有機材料及び変性有機材料からなる群から選ばれる。より具体的には、複数の例示において、セラミック材料は、チタン酸バリウム(Barium Titanate;BT)、チタン酸鉛、チタン酸バリウムストロンチウム(Barium Strontium Titanate;BST)、酸化チタン、酸化鉛、チタン酸ジルコン酸鉛(Pb(ZrTi)O;PZT)、ペロブスカイト立方晶構造(CaCuTi12;CCTO)及びマグネシウムニオブ酸鉛-チタン酸鉛(PMN-PT)からなる群から選ばれる。複数の例示において、変性セラミック材料は、変性基を含む、変性セラミック材料の変性基がシリル基を含む。複数の例示において、導電性粒子は、炭素類粒子及び金属粒子を含む。例として、炭素類粒子は、カーボン60(C60)、グラフェン(Graphene)、カーボンブラック、炭素繊維及びカーボンナノチューブ(Carbon Nanotube;CNT)からなる群から選ばれる。金属粒子は、銀、アルミニウム、銅、ニッケル、亜鉛及び鉄からなる群から選ばれる。複数の例示において、変性導電性粒子は、変性基を含む変性炭素類粒子を含む。変性炭素類粒子の変性基は、アミノ基、アニリノ基、カルボキサミド基、カルボキシル基及びヒドロキシル基からなる群から選ばれる。複数の例示において、有機材料は、導電性ポリアニリン及び銅フタロシアニン(Copper Phthalocyanine;CuPc)からなる群から選ばれる。複数の例示において、変性有機材料は、スルホン酸基、ヒドロキシル基、エーテル基、アミノ基及び(p-クロロメチルベンゼン)ビニル基からなる群から選ばれる変性基を含む。理解すべきなのは、誘電体フィラーは、上記変性液晶ポリマーの溶液に加えてコーティング等の類似なプロセスによって支持プレート上に形成し、また加熱プロセスによって溶剤を乾燥するまで蒸発させて誘電率が高められた絶縁基板を形成する。注意すべきなのは、誘電体フィラーは、変性液晶ポリマーの溶液に溶解するものではなく、変性液晶ポリマーの溶液に均一に分散される。 When the content of the dielectric filler exceeds a certain value, for example, 85 parts by weight, the dielectric fillers communicate with each other, so that the material changes from an insulator to a conductor, and the dielectric constant and conductivity of the material change drastically. , further loses its performance as an insulating substrate. In embodiments, the dielectric filler is selected from the group consisting of ceramic materials, modified ceramic materials, conductive particles, modified conductive particles, organic materials and modified organic materials. More specifically, in some examples, the ceramic material includes Barium Titanate (BT), Lead Titanate, Barium Strontium Titanate (BST), Titanium Oxide, Lead Oxide, Zircon Titanate. It is selected from the group consisting of lead acid (Pb(ZrTi)O 3 ; PZT), perovskite cubic structure (CaCu 3 Ti 4 O 12 ; CCTO) and lead magnesium niobate-lead titanate (PMN-PT). In some examples, the modified ceramic material comprises a modifying group, wherein the modifying group of the modified ceramic material comprises a silyl group. In some examples, the conductive particles include carbonaceous particles and metal particles. For example, the carbonaceous particles are selected from the group consisting of carbon 60 (C 60 ), graphene, carbon black, carbon fiber and carbon nanotube (CNT). Metal particles are selected from the group consisting of silver, aluminum, copper, nickel, zinc and iron. In some examples, the modified conductive particles comprise modified carbonaceous particles containing modifying groups. The modifying group of the modified carbon particles is selected from the group consisting of amino group, anilino group, carboxamide group, carboxyl group and hydroxyl group. In some examples, the organic material is selected from the group consisting of conductive polyaniline and Copper Phthalocyanine (CuPc). In some examples, the modified organic material includes modifying groups selected from the group consisting of sulfonic acid groups, hydroxyl groups, ether groups, amino groups, and (p-chloromethylbenzene)vinyl groups. It should be understood that the dielectric filler is formed on the support plate by a similar process such as coating in addition to a solution of the modified liquid crystal polymer described above, and the dielectric constant is enhanced by a heating process to evaporate the solvent until dry. forming an insulating substrate. It should be noted that the dielectric filler is not dissolved in the modified liquid crystal polymer solution, but is uniformly dispersed in the modified liquid crystal polymer solution.

ある実施形態において、誘電体フィラーの平均粒径は、0.1~20μmである。複数の実施例によれば、誘電体フィラーの平均粒径がある数値、例えば0.1μmよりも小さい場合、誘電率の向上効果が著しくない。逆に、誘電体フィラーの平均粒径がある数値、例えば20μmよりも大きい場合、誘電体フィラー粒子の分散性を制御しにくく、且つ誘電体フィラー粒子の間にある互いの連通を容易にし、更に後の絶縁基板がその絶縁性能を失う。従って、誘電体フィラーの平均粒径は、例えば0.5μm、1.0μm、1.5μm、2.0μm、2.5μm、3.0μm、3.5μm、4.0μm、4.5μm、5.0μm、5.5μm、6.0μm、6.5μm、7.0μm、7.5μm、8.0μm、8.5μm、9.0μm、9.5μm、10.0μm、12.0μm、14.0μm、16.0μm又は18.0μmであってよい。 In one embodiment, the dielectric filler has an average particle size of 0.1 to 20 μm. According to several examples, when the average particle size of the dielectric filler is smaller than a certain value, for example, 0.1 μm, the effect of improving the dielectric constant is not significant. Conversely, if the average particle size of the dielectric filler is larger than a certain value, for example, 20 μm, it is difficult to control the dispersibility of the dielectric filler particles, and it becomes easy to communicate between the dielectric filler particles. Later insulating substrates lose their insulating properties. Therefore, the average particle size of the dielectric filler is, for example, 0.5 μm, 1.0 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3.0 μm, 3.5 μm, 4.0 μm, 4.5 μm, 5.5 μm, 0 μm, 5.5 μm, 6.0 μm, 6.5 μm, 7.0 μm, 7.5 μm, 8.0 μm, 8.5 μm, 9.0 μm, 9.5 μm, 10.0 μm, 12.0 μm, 14.0 μm, It may be 16.0 μm or 18.0 μm.

一般的に、変性液晶ポリマー自体が優れた加工性、耐熱性、低吸水率、低い誘電率(Dk)(例えば、2~4にある)及び低い損失係数(Df)(例えば、0.003~0.008にある)の特性を有するので、本発明の絶縁基板を形成するための組成物は、上記誘電率を高めることができる誘電体フィラーを含み、誘電率を3~200の間に高め、且つ損失係数を0.003~0.008にあるようにしてよい。典型的に、誘電体材料は、誘電率の高低によって高誘電率(例えば、4よりも大きい)や低誘電率(例えば、4以下)に分けられる。高誘電体材料は、主に、電子製品の消費電力を削減するように、ゲート誘電体材料、エネルギー貯蔵材料及び無線通信材料等の分野に用いられるが、低誘電体材料は、主に、抵抗器の遅延(RC delay)による悪影響を低減するように、電子パッケージング材料の調製に使用される。 Generally, the modified liquid crystal polymer itself has excellent processability, heat resistance, low water absorption, low dielectric constant (Dk) (eg, between 2 and 4) and low loss factor (Df) (eg, between 0.003 0.008), the composition for forming the insulating substrate of the present invention contains a dielectric filler capable of increasing the dielectric constant, and increases the dielectric constant between 3 and 200. , and the loss factor may be between 0.003 and 0.008. Typically, dielectric materials are classified into high dielectric constants (eg, greater than 4) and low dielectric constants (eg, 4 or less) depending on the dielectric constant. High dielectric materials are mainly used in fields such as gate dielectric materials, energy storage materials and wireless communication materials, so as to reduce the power consumption of electronic products, while low dielectric materials are mainly used for resistive It is used in the preparation of electronic packaging materials to reduce the adverse effects of RC delay.

他の代替的な実施形態において、絶縁基板を形成するための組成物は、変性ポリイミド(Polyimide;PI)及び誘電体フィラーを含んでよい。具体的には、変性ポリイミドは、芳香族モノマーや/又は他の吸水性を低下させるのに役立つ官能性モノマーを含む。例として、芳香族モノマーは、芳香族ジアミン、芳香族二無水物、芳香族ポリアミド、ポリフェニレンテレフタルアミド(polyphenylene terephthalamide;PPTA)、ポリ-p-フェニレンベンゾオキサゾール((poly(p-phenylene-2,6-benzobisoxazole;PBO)及びp-ヒドロキシ安息香酸と6-ヒドロキシ-2-ナフトエ酸との共重合体(poly(p-hydroxybenzoic acid-co-2-hydroxy -6-naphthoic acid))を含んでよい。誘電体フィラーの特徴や実施例については、上記において詳しく説明したので、ここで繰り返して説明しない。 In another alternative embodiment, a composition for forming an insulating substrate may include a modified polyimide (PI) and a dielectric filler. Specifically, the modified polyimide includes aromatic monomers and/or other functional monomers that help reduce water absorption. Examples of aromatic monomers include aromatic diamines, aromatic dianhydrides, aromatic polyamides, polyphenylene terephthalamide (PPTA), poly-p-phenylenebenzoxazole ((poly(p-phenylene-2,6 -benzobisoxazole; PBO) and a copolymer of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid (poly(p-hydroxybenzoic acid-co-2-hydroxy-6-naphthoic acid)). Features and embodiments of the dielectric filler have been described in detail above and will not be repeated here.

本発明の別の態様は、回路板構造10を提供する。図1~図4は、本発明の複数の実施形態による回路板構造を示す断面模式図である。まず図1を参照されたい。回路板構造10は、少なくとも1つの絶縁基板12と、少なくとも1つの再配線層14と、を含む。この少なくとも1つの絶縁基板12は、上記に記載の絶縁基板を形成するための組成物を含む。つまり、この少なくとも1つの絶縁基板12を形成する組成物は、100重量部の変性液晶ポリマーと、0.5重量部~85重量部の誘電体フィラーと、を含む。変性液晶ポリマー及び誘電体フィラーの両者の特徴及び実施例については、上記において詳しく説明したので、ここで繰り返して説明しない。この少なくとも1つの再配線層14は、絶縁基板に位置する。 Another aspect of the invention provides a circuit board structure 10 . 1-4 are schematic cross-sectional views showing circuit board structures according to several embodiments of the present invention. Please refer to FIG. 1 first. Circuit board structure 10 includes at least one insulating substrate 12 and at least one redistribution layer 14 . The at least one insulating substrate 12 comprises a composition for forming an insulating substrate as described above. That is, the composition forming the at least one insulating substrate 12 includes 100 parts by weight of modified liquid crystal polymer and 0.5 to 85 parts by weight of dielectric filler. Features and embodiments of both the modified liquid crystal polymer and the dielectric filler have been described in detail above and will not be repeated here. This at least one redistribution layer 14 is located on the insulating substrate.

ある実例において、再配線層14の材料は、銅、アルミニウム、鉄、銀、パラジウム、ニッケル、クロム、モリブデン、タングステン、亜鉛、マンガン、コバルト、金、錫、鉛又はステンレス、或いはそれらの少なくとも2種を混合させてなる合金を含んでよい。より詳しくは、再配線層14は、例えば、銅箔、アルミニウム箔、銀箔、錫箔又は/及び金箔のような金属箔(metal foil)をエッチングすることで形成する。ある実施例において、再配線層14の表面は、コーティング処理によって、例えばニッケル金層、亜鉛層又はコバルト層のような被覆層(未図示)を再配線層14の表面に覆うようにする。 In some instances, the material of redistribution layer 14 is copper, aluminum, iron, silver, palladium, nickel, chromium, molybdenum, tungsten, zinc , manganese , cobalt, gold, tin, lead, or stainless steel, or at least two of them. It may include alloys of mixed species. More specifically, the rewiring layer 14 is formed by etching a metal foil such as copper foil, aluminum foil, silver foil, tin foil and/or gold foil. In one embodiment, the surface of the redistribution layer 14 is covered with a coating layer (not shown), such as a nickel-gold layer, a zinc layer, or a cobalt layer, on the surface of the redistribution layer 14 through a coating process.

図2を参照すると、複数の実施例において、回路板構造10は、絶縁基板12と再配線層14との間に位置する接着層16を更に含んでよい。より具体的には、接着層16は、再配線層14と同じパターンを有する。接着層16の形成により、絶縁基板12と再配線層14との間により優れた結合力を持つようになる。複数の例示において、接着層16は、フッ素樹脂、ポリフェニレンエーテル樹脂(PPO/PPE)、アラルキルエポキシ樹脂、エポキシ樹脂、フェノキシ樹脂、アクリル樹脂、ウレタン樹脂、シリコーンゴム系樹脂、ポリ-p-キシレン系樹脂、液晶ポリマー、ビスマレイミド系樹脂及びポリイミド樹脂からなる群から選ばれる。例として、フッ素樹脂は、ポリテトラフルオロエチレン(Polytetrafluoroethylene;PTFE)、テトラフルオロエチレン-パーフルオロアルキルビニルエーテル共重合体(Polyfluoroalkoxy;PFA)、テトラフルオロエチレン-ヘキサフルオロプロピレン共重合体(Fluorinated Ethylene Propylene;FEP)、エチレン-テトラフルオロエチレン共重合体(Ethylene-tetra-fluoro-ethylen;ETFE)を含んでよい。アラルキルエポキシ樹脂は、ビフェニル型エポキシ樹脂を含んでよい。図1及び図2に示す回路板構造10の模式図は、片面回路板(single sided circuit board)構造である。 Referring to FIG. 2, in some embodiments, circuit board structure 10 may further include an adhesive layer 16 located between insulating substrate 12 and redistribution layer 14 . More specifically, the adhesive layer 16 has the same pattern as the rewiring layer 14 . The formation of the adhesive layer 16 provides better bonding between the insulating substrate 12 and the redistribution layer 14 . In some examples, the adhesive layer 16 is made of fluorine resin, polyphenylene ether resin (PPO/PPE), aralkyl epoxy resin, epoxy resin, phenoxy resin, acrylic resin, urethane resin, silicone rubber resin, poly-p-xylene resin. , liquid crystal polymer, bismaleimide resin and polyimide resin. Examples of fluororesins include polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (Polyfluoroalkoxy; PFA), tetrafluoroethylene-hexafluoropropylene copolymer (Fluorinated Ethylene Propylene; FEP ), ethylene-tetra-fluoro-ethylene (ETFE). Aralkyl epoxy resins may include biphenyl-type epoxy resins. The schematic diagram of the circuit board structure 10 shown in FIGS. 1 and 2 is a single sided circuit board structure.

しかしながら、本発明は、上記の片面回路板に限定されない。回路板構造10は、必要なラインレイアウトによって絶縁基板12及び再配線層14のそれぞれの層数を決定する多層回路基板(multilayer circuit board)構造であってもよい。図3に示す回路板構造10は、2層の絶縁基板12及び3層の再配線層14を有し、且つこの2層の絶縁基板12がそれぞれ隣接する2つの再配線層14の間に挟まれることに、図1に示す回路板構造10と異なる。理解すべきなのは、任意の2層の再配線層14の間の信号伝送は、絶縁基板12に設けられる導電性ブラインドホール18によって実施される。従って、回路板構造10は、絶縁基板12を貫通する少なくとも1つの導電性ブラインドホール18を更に含んでもよい。ある実施例において、導電性ブラインドホール18の材料は、再配線層14の材料と類似してよい。 However, the invention is not limited to the single-sided circuit board described above. The circuit board structure 10 may be a multilayer circuit board structure where the required line layout determines the respective number of layers of the insulating substrate 12 and the redistribution layer 14 . A circuit board structure 10 shown in FIG. 1, in that it differs from the circuit board structure 10 shown in FIG. It should be understood that signal transmission between any two redistribution layers 14 is accomplished through conductive blind holes 18 provided in the insulating substrate 12 . Accordingly, circuit board structure 10 may further include at least one conductive blind hole 18 through insulating substrate 12 . In some embodiments, the material of conductive blind hole 18 may be similar to the material of redistribution layer 14 .

図4を参照されたい。複数の実施例において、回路板構造10は、絶縁基板12と再配線層14との間に位置する接着層16を更に含んでよい。より具体的には、導電性ブラインドホール18は、接着層16を貫通し、隣接する2層の再配線層14に電気的接続される。接着層16の特徴や実施例については、上記において詳しく説明したので、ここで繰り返して説明しない。本発明の他の実施例において、回路板構造は、2層以上の絶縁基板、及び絶縁基板の間にある再配線層を含んでもよい。 Please refer to FIG. In some embodiments, circuit board structure 10 may further include an adhesive layer 16 positioned between insulating substrate 12 and redistribution layer 14 . More specifically, the conductive blind holes 18 pass through the adhesive layer 16 and are electrically connected to the two adjacent rewiring layers 14 . Features and embodiments of adhesive layer 16 have been described in detail above and will not be repeated here. In another embodiment of the invention, the circuit board structure may include two or more layers of insulating substrates and a redistribution layer between the insulating substrates.

要するに、本発明の絶縁基板を形成するための組成物は、変性液晶ポリマー及び誘電体フィラーを含み、この組成物の組成成分を調整して絶縁基板の誘電率を大幅に高めることで、高誘電率(例えば、4~200)の絶縁基板が高周波信号伝送でも低誘電損失係数(例えば、0.003~0.008)を有し、信号伝送の遅延又は損失を低減させ、それにより、信号伝送の速度及び/又は周波数を増加させる。更に、本発明の絶縁基板を形成するための組成物は、高温高湿である厳しい環境での信号伝送の品質及び安定性を確保することができる。 In short, the composition for forming the insulating substrate of the present invention contains a modified liquid crystal polymer and a dielectric filler. Insulating substrates with a dielectric constant (eg, 4 to 200) have a low dielectric loss factor (eg, 0.003 to 0.008) even in high frequency signal transmission, reducing the delay or loss of signal transmission, thereby increase the speed and/or frequency of Furthermore, the composition for forming the insulating substrate of the present invention can ensure the quality and stability of signal transmission in severe environments of high temperature and high humidity.

本発明を実施例により前述の通りに開示したが、これは本発明を限定するものではなく、当業者なら誰でも、本発明の精神と領域から逸脱しない限り、多様の変更や修飾を加えることができる。従って、本発明の保護範囲は、後の特許請求の範囲で指定した内容を基準とするものである。 Although the present invention has been disclosed above by way of example, it is not intended to limit the invention and various changes and modifications may be made by anyone skilled in the art without departing from the spirit and scope of the invention. can be done. Therefore, the protection scope of the present invention should be based on what is specified in the following claims.

10 回路板構造
12 絶縁基板
14 再配線層
16 接着層
18 導電性ブラインドホール
10 Circuit Board Structure 12 Insulating Substrate 14 Rewiring Layer 16 Adhesive Layer 18 Conductive Blind Hole

Claims (12)

絶縁基板を形成するための組成物において、 下記構造の繰り返し単位を有し、
Figure 0007243953000010
又はそれらの組み合わせであり、R、R及びRはC2n+1であり、且つnは、正整数である100重量部の変性液晶ポリマーと、 0.5重量部~85重量部である誘電体フィラーと、 を含み、 前記誘電体フィラーの平均粒径は、0.1~20μmであり、 前記変性液晶ポリマーは、可溶性であり、並びに、 前記誘電体フィラーは、セラミック材料、変性セラミック材料、導電性粒子、変性導電性粒子、有機材料及び変性有機材料からなる群から選ばれる、組成物。
A composition for forming an insulating substrate, having a repeating unit having the following structure,
Figure 0007243953000010
or a combination thereof, wherein R 1 , R 2 and R 3 are C n H 2n+1 and n is a positive integer, 100 parts by weight of a modified liquid crystalline polymer; a dielectric filler, wherein the dielectric filler has an average particle size of 0.1 to 20 μm, the modified liquid crystal polymer is soluble, and the dielectric filler is a ceramic material, a modified ceramic A composition selected from the group consisting of materials, conductive particles, modified conductive particles, organic materials and modified organic materials.
前記セラミック材料は、チタン酸バリウム、チタン酸鉛、チタン酸バリウムストロンチウム(BST)、酸化チタン、酸化鉛、チタン酸ジルコン酸鉛(PZT)、ペロブスカイト立方晶構造(CaCuTi12、CCTO)及びマグネシウムニオブ酸鉛-チタン酸鉛(PMN-PT)からなる群から選ばれる請求項1に記載の組成物。 Said ceramic materials are barium titanate, lead titanate, barium strontium titanate (BST), titanium oxide, lead oxide, lead zirconate titanate ( PZT ), perovskite cubic structure ( CaCu3Ti4O12 , CCTO ) . and lead magnesium niobate-lead titanate (PMN-PT). 前記変性セラミック材料は、シリル基を含有する変性基を含む請求項1に記載の組成物。 2. The composition of claim 1, wherein the modified ceramic material comprises modifying groups containing silyl groups. 前記導電性粒子は、炭素類粒子及び金属粒子を含む請求項1に記載の組成物。 2. The composition of claim 1, wherein the conductive particles comprise carbonaceous particles and metal particles. 前記炭素類粒子は、カーボン60(C60)、グラフェン、カーボンブラック、炭素繊維及びカーボンナノチューブからなる群から選ばれる請求項4に記載の組成物。 5. The composition according to claim 4, wherein the carbonaceous particles are selected from the group consisting of carbon 60 ( C60 ), graphene, carbon black, carbon fibers and carbon nanotubes. 前記金属粒子は、銀、アルミニウム、銅、ニッケル、亜鉛及び鉄からなる群から選ばれる請求項4に記載の組成物。 5. The composition of claim 4, wherein said metal particles are selected from the group consisting of silver, aluminum, copper, nickel, zinc and iron. 前記変性導電性粒子は、アミノ基、アニリノ基、カルボキサミド基、カルボキシル基及びヒドロキシル基からなる群から選ばれる変性基を含有する変性炭素類粒子を含む請求項1に記載の組成物。 2. The composition according to claim 1, wherein said modified conductive particles comprise modified carbon particles containing modifying groups selected from the group consisting of amino groups, anilino groups, carboxamide groups, carboxyl groups and hydroxyl groups. 前記有機材料は、導電性ポリアニリン及び銅フタロシアニン(CuPc)からなる群から選ばれる請求項1に記載の組成物。 2. The composition of claim 1, wherein said organic material is selected from the group consisting of conductive polyaniline and copper phthalocyanine (CuPc). 前記変性有機材料は、スルホン酸基、ヒドロキシル基、エーテル基、アミノ基及び(p-クロロメチルベンゼン)ビニル基からなる群から選ばれる変性基を含む請求項1に記載の組成物。 The composition of claim 1, wherein said modifying organic material comprises modifying groups selected from the group consisting of sulfonic acid groups, hydroxyl groups, ether groups, amino groups and (p-chloromethylbenzene)vinyl groups. 請求項1に記載の前記絶縁基板を形成するための組成物を含む少なくとも1つの絶縁基板と、 前記絶縁基板に位置する少なくとも1つの再配線層と、 を備える回路板構造。 A circuit board structure comprising: at least one insulating substrate comprising the composition for forming the insulating substrate of claim 1; and at least one redistribution layer located on the insulating substrate. 前記絶縁基板と前記再配線層との間に位置する接着層を更に備える請求項10に記載の回路板構造。 11. The circuit board structure of claim 10 , further comprising an adhesive layer positioned between said insulating substrate and said redistribution layer. 前記接着層は、フッ素樹脂、ポリフェニレンエーテル樹脂、アラルキルエポキシ樹脂、エポキシ樹脂、フェノキシ樹脂、アクリル樹脂、ウレタン樹脂、シリコーンゴム系樹脂、ポリ-p-キシレン系樹脂、液晶ポリマー、ビスマレイミド系樹脂及びポリイミド樹脂からなる群から選ばれる請求項11に記載の回路板構造。 The adhesive layer includes fluorine resin, polyphenylene ether resin, aralkyl epoxy resin, epoxy resin, phenoxy resin, acrylic resin, urethane resin, silicone rubber resin, poly-p-xylene resin, liquid crystal polymer, bismaleimide resin and polyimide. 12. The circuit board structure of claim 11 , selected from the group consisting of resins.
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